Synthesis of the general HF high power tuned amplifier model usingPSPICE package

Application of the PSPICE package for analysing the HF high-power tuned amplifier (HFHPTA) enables nonlinear active element modelling in the HFHPTA. The corresponding coefficients of the electronic tube model (for both triode and tetrode) in the HFHPTA are derived     

Broadband 60-W HF linear amplifier

The design, construction and performance of a solid-state untuned 2-30 MHz amplifier is described. Operation is from 28 V dc. Overall CW efficiency is greater than 47 percent at 60-w unfiltered output. Amplifier efficiency for two-tone 60-W PEP output is greater than 31 percent. two-tone linearity over the frequency range is -30 dB or better at output powers from 5-60 W. Broadband transmission-line transformers wound on ferrite toroids are used throughout for impedance matching. Hybrids of similar construction are used for output-power adding.     

Monolithic operational amplifier design with improved HF behaviour

The design of a monolithic operational amplifier, which combines a large bandwidth and a high output current, is described. The output stage is equipped with n-p-n transistors only, biased in class-AB by an internal common-mode feedback loop. The intermediate stage consists of a unity-current-gain split-frequency-band voltage level shift. An integrated version, intended for driving 50-/spl Omega/ coaxial line systems, achieves a bandwidth of 25 MHz and 100-mA output current. The principle described provides the possibility for achieving higher output currents.     

An integrated operational amplifier with novel HF behavior

There is a growing demand for integrated operational amplifiers that combine high gain with a large unity-gain bandwidth and a simple frequency compensation. A frequency-compensation technique is described that enables construction of multi-stage amplifiers without introducing compensation problems. The suggested solution is based on the elimination of stages in the high-frequency region, such that in this region only one stage determines the roll-off. A circuit diagram of an integrated operational amplifier with a gain of 15/spl times/10/SUP 3/, a unity-gain bandwidth of 25 MHz, and frequency compensation in accordance with the above principle of elimination is presented.     

Envelope-tracking-based Doherty power amplifier

From the instantaneous efficiency plot, it is observed that the conventional 2-stage Doherty power amplifier (DPA) with high upper power dynamic range (>12 dB) suffers from a substantial dip in the middle of the upper power regime, thus reducing the average efficiency. In this study, an envelope-tracking-based DPA is proposed in order to minimise this dip by adjusting the drain bias voltage of the auxiliary amplifier of the DPA proportional to the input power level.     

小型化功率放大模块

介绍了ＶＨＦ频段小型化功率放大模块的设计方法和试验研制过程,采用混合集成电路技术,将两级芯片集成到微型封装的密封管壳中,采用内匹配技术,实现阻抗匹配,提高和改善增益。在 １３０～１８０ＭＨｚ率范围内,试制出Ｇｐ≥３０ｄＢ,Ｐｏ≥１．５Ｗ,л≥５０％的功率放大模块。功率放大模块的体积为１５ｍｍｘ１０ｍｍｘ５ｍｍ,其质量只有 ３克。     

高功率多程放大器

研究了高功率激光放大器在多程放大情况下的增益,分析了提高引出效率的条件,得出选择最佳工作参数的一般原则.所得结果已应用于研制通光口径为100毫米的两轮三通道片状放大器,理论和实际相符.     

利用自适应变化电源提高功率放大器效率

功率放大器IC的ACPR和效率指标通常针对最大输出功率进行优化,而蜂窝电话在绝大多数时间工作在中等功率或低功率状态,这期间的功放效率将明显降低。利用DC／DC转换器MAX8506提供变化的电源电压,能够有效改善中等功率或低功率模式下的功放效率,延长手机通话时间。     

Plate and grid modulated HF high-power tuned amplifier withincreased efficiency

The optimal design of a plate- and grid-modulated high-power tuned HF amplifier with increased efficiency is reported. The increased efficiency is achieved by introducing the third harmonic into the drive and output circuits. The analysis is carried out by applying a linear model of the constant plate current characteristics of an HF high-power triode. The initial CW (continuous-wave) working conditions are selected so that it is possible to realize a 100% modulation. Calculated values are presented graphically as functions of some relevant design parameters. A comparison is made with a tuned high-power amplifier without injection     

L波段GaN自偏压功率放大器

介绍了一款L波段自偏压内匹配功率放大器。器件采用0.25 μm工艺GaN高电子迁移率晶体管(HEMT)管芯,内匹配技术对单胞管芯进行输入输出匹配,放大器的工作频带范围为1.2~1.4 GHz。采用自偏压技术,单电源供电,使电路更为简洁,使用方便。工作电压为28 V,占空比为10%,脉宽为300 μs,在输入功率为26 dBm时,频带内输出功率在40 dBm以上,功率附加效率大于60%,充分显示了GaN功率器件在单电源模块中的性能优势。     

Large swing CMOS power amplifier

A CMOS class AB power amplifier is presented in which supply-to-supply voltage swings across low-impedance loads are efficiently and readily handled. The amplifier consists of a high-gain input stage and a push-pull unity-gain amplifier output stage. The amplifier dissipates only 7 mW of DC power and delivers 36 mW of AC power to a 300-/spl Omega/ load, using standard power supplies of /spl plusmn/5.0 V. Lower impedance loads can be driven to higher power levels, providing the internal current limiting level is not exceeded.     

Class-AB high-swing CMOS power amplifier

A power amplifier for a loudspeaker and the earpiece of a telephone subset, integrated in the codec chip ARCOFI-SP (audio ringing codec filter featuring speakerphone function), are presented. The ARCOFI-SP is part of a subscriber telephone chip set. The analog section of the receive path comprises a low-noise programmable gain microphone amplifier with a maximum gain of 30-dB followed by a 16-b second-order sigma-delta analog-to-digital (A/D) converter. The analog section of the transmit path consists of two 16-b second-order sigma-delta D/A converters, one driving a pair of handset amplifiers for 200- Omega differential load and the other one a pair of loudspeaker amplifiers for 50- Omega differential load. The loudspeaker amplifier is described. A digital signal processor calculates the filter functions and handles frequency and tone generation. The amplifier has 1.2-mA quiescent current, 64-mA peak current, and >60 dB S/THD with 3.2-V output swing into a 25- Omega load.<>     

宽带线性功率放大器的设计

根据宽带功率放大器设计的基本原理,通过采用LDMOS场效应晶体管、实频技术法以及前馈线性化技术,同时利用ADS软件平台,成功设计出一款工作带宽为50~550MHz的宽带线性功率放大器,实现了多倍频程带宽、高增益、良好平坦度及小输入/输出驻波比。通过ADS仿真和优化,得到了比较满意的结果。     

A high-performance CMOS power amplifier

A high-performance CMOS power amplifier consisting of a new input stager especially suited to power amplifier applications and a variation on a class AB output stage is presented. The amplifier has been fabricated using a conventional silicon gate p-well process. The configuration results in several performance improvements over previously reported high-output current amplifiers without requiring process enhancements. Design details and experimental results are described.     

放大器的额定输出功率

介绍国际标准、国家标准和行业标准对放大器额定输出功率的规定，对一些文章的概念混淆及个别产品的标识混乱进行分析并加以澄清。     

Junction-gate FET RF power amplifier

A junction-gate power field-effect transistor of recent design has been found to yield greater than 25 watts CW at 30 MHz in two modes of circuit configuration. In this investigation, favorable characteristics are explored for potential device utility as a high-reliability low-distortion RF power amplifier.     

High-speed multiple-quantum-well optical power amplifier

A multiple-quantum-well optical amplifier is used at 8 Gb/s with high input power such that the average gain is compressed by 2.6 dB. Under these conditions, the output signal level is 35 mW and there is negligible intersymbol interference (ISI) penalty at the receiver. This is possible because of a rapid (7 ps) gain recovery process in the amplifier. A conventional semiconductor amplifier operating at a similar level of gain compression shows 2 dB ISI penalty     

高功率声光调Q主振荡功率放大器

为了实现在高重复频率调Q的同时,又有好的光束质量。实验设计了激光二极管抽运的高重复频率、高功率的主功率放大（MOPA）结构激光器,激光器采用声-光调Q,主振荡功率放大+二级放大的结构。优化了主功率放大（MOPA）激光器的结构和相关参数,完成了关于高功率高重频主功率放大（MOPA）结构激光器的实验研究,并且通过合理排列光学元件在谐振腔中的位置来实现光束质量的提高,利用聚焦镜和狭缝来实现激光模式的匹配。在重复频率为50 kHz时,实现了最高功率为51.3 W,输出脉宽为18.62 ns,光束质量为MX2=1.882、MY2=1.971的激光输出,光-光转换效率为23.75%。在增益导引的作用下,主振荡功率放大（MOPA）激光器的输出光光束质量得到了有效的提高。