共查询到17条相似文献,搜索用时 500 毫秒
1.
基于自偏置电流镜的CMOS红外焦平面读出电路 总被引:1,自引:0,他引:1
针对高精度红外焦平面阵列应用设计了一种具有高注入效率、大动态范围、稳定的探测器偏压、小面积和低功耗的自偏置电流镜注入CMOS读出电路.所设计的电路结构包括一种由自偏置的宽摆幅PMOS共源共栅电流镜和NMOS电流镜构成的反馈结构读出单元电路和相关双采样电路.对所设计电路采用Chartered 0.35 μm CMOS工艺进行了流片.测试结果显示:电路线性度达到了99%,探测器两端偏压小于1mV.电路输入阻抗近似为0,单元电路面积为10μm×15μm,功耗小于0.4μW.电量存储能力3108电子.测试结果表明:电路功能和性能都达到了设计要求. 相似文献
2.
3.
设计了一种偏压可调电流镜积分(Current Mirroring Integration,CMI)红外量子阱探测器焦平面CMOS读出电路。该电路适应根据偏压调节响应波段的量子阱探测器,其中探测器偏压从0.61 V到1.55V范围内可调。由于CMI的电流反馈结构,使得输入阻抗接近0,注入效率达0.99;且积分电容可放在单元电路外,从而可以在一定的单元面积下,增大积分电容,提高了电荷处理能力和动态范围;为提高读出电路的性能,电路加入撇除(Skimming)方式的暗电流抑制电路。采用特许半导体(Chartered)0.35 m标准CMOS工艺对所设计的电路(16×1阵列)进行流片,测试结果表明:在电源电压为3.3V,积分电容为1.25pF时,电荷处理能力达到1.3×107个电子;输出摆幅达到1.76V;功耗为25mW;动态范围为75dB;测试结果显示CMI可应用于高性能FPA。 相似文献
4.
5.
6.
7.
8.
9.
10.
11.
A pixelwise readout circuit for application in microbolometer focal plane arrays (FPAs) is studied. A current mirroring injection input circuit that is suitable for a pixelwise architecture and has high responsivity is proposed. The noise equivalent temperature difference can be improved to 31 mK. 相似文献
12.
Chih-Cheng Hsieh Chung-Yu Wu Tai-Ping Sun Far-Wen Jih Ya-Tung Cherng 《Solid-State Circuits, IEEE Journal of》1998,33(8):1188-1198
A new CMOS current readout structure for the infrared (IR) focal-plane-array (FPA), called the buffered gate modulation input (BGMI) circuit, is proposed in this paper. Using the technique of unbalanced current mirror, the new BGMI circuit can achieve high charge sensitivity with adaptive current gain control and good immunity from threshold-voltage variations. Moreover, the readout dynamic range can be significantly increased by using the threshold-voltage-independent current-mode background suppression technique. To further improve the readout performance, switch current integration techniques, shared-buffer biasing technique, and dynamic charging output stage with the correlated double sampling circuit are also incorporated into the BGMI circuit. An experimental 128×128 BGMI readout chip has been designed and fabricated in 0.8 μm double-poly-double-metal (DPDM) n-well CMOS technology. The measurement results of the fabricated readout chip under 77 K and 5 V supply voltage have successfully verified both readout function and performance improvement. The fabricated chip has the maximum charge capacity of 9.5×107 electrons, the transimpedance of 2.5×109 Ω at 10 nA background current, and the arrive power dissipation of 40 mW. The uniformity of background suppression currents can be as high as 99%. Thus, high injection efficiency, high charge sensitivity, large dynamic range, large storage capacity, and low noise can be achieved In the BGMI circuit with the pixel size of 50×50 μm2. These advantageous characteristics make the BCMI circuit suitable for various IR FPA readout applications with a wide range of background currents 相似文献
13.
14.
15.
New dark current suppression CMOS readout circuit with novel CDS structure for large format QWIP FPA
ZhangZhi YuanXianghui HuangYoushu LuGuolin 《电子科学学刊(英文版)》2004,21(5):384-391
A new Dark Current Suppression (DCS) CMOS readout circuits for large format Quantum-Well-Infrared Photo-detector (QWIP) Focal-Plane-Array (FPA) with novel CorrelatedDouble-Sampling (CDS) structure based on dynamic source-follower are proposed, which can overcome the drawbacks of the present techniques, such as sensitive to the non-uniformity of the QWIP materials, poor readout noise features, low frame frequency, limited injection efficiency and dynamic range, etc. The dummy is adopted to realize dark current suppression, while the cascode current mirror (with current ratio of 1:10) can increase charge sensitivity and reduce integration time. Through the novel CDS structure, the output waveform is boxcar, and the frame frequency is increased. Simulation results demonstrate that, in high background sense, the proposed DCS circuit can suppress the dark current, achieve good readout performance, such as low power consumption, high charge sensitivity, high resolution, large dynamic range, and insensitive to the non-uniformity of the QWIP materials. 相似文献
16.
文章对N+PPN结构的MW/LW双色红外焦平面信号电流同步积分的工作模式,提出了一种双色读出电路输入级的新结构,即在栅调制注入输入级的基础上加以设计改进,采用电流镜对一个独立波段(LW)的信号电流进行两路精确复制,分别用于此波段的信号电流积分、与混合波段信号电流的相减,解决了探测器输出端混合波段信号电流的分离问题,达到了两个波段信号电流同步独立积分的目的。本文就双色电路的输入级结构和工作原理进行了详细的阐述,电路模拟验证的结果表明该电路适用于信号电流大于10nA的双色器件(MW/LW,MW1/MW2,LW1/LW2双色器件),有较高的精确度(误差<2%)和良好的性能。 相似文献
17.
Xiqu Chen Xinjian Yi Ying Yang Yi Li 《Journal of Infrared, Millimeter and Terahertz Waves》2006,27(9):1281-1291
A new CMOS readout circuit for VO2-based uncooled FPAs is presented in this paper. The on-chip readout circuit consists of three major parts: An input circuit of BCDI structure, a column-shared integration circuit of CTIA structure, and a common CDS output circuit. The simple configuration of the input circuit makes it possible to operate more circuits in parallel, and increases the integration time and number of pixels, the column-shared integration circuit which is suitable for small pixel size provides low noise, high gain, a highly stable detector bias, and high photon current injection efficiency, and the common CDS output circuit is utilized to reduce or eliminate low-frequency noise of the readout circuit. An experimental readout chip for 50-μm-pitch 32×32 element VO2-based uncooled FPAs has been fabricated. The measurement results of the fabricated readout chip have successfully verified its readout function and excellent performance. 相似文献