NiMn2O4热敏材料纳米粉体烧结过程研究

本文采用溶胶－凝胶法（ｓｏｌ－ｇｅｌ）制备ＮｉＭｎ２Ｏ４纳米粉体。将ＮｉＭｎ２Ｏ４纳米粉体压制成型,进行烧结。对ＮｉＭｎ２Ｏ４的米粉体烧结过程进行研究。实验结果表明：ＮｉＭｎ２Ｏ４纳米粉体的烧结温度比传统烧结方法低２００℃左右。在１１００℃以下的温度范围,烧结试样的相结构均为尖晶石结构。ＮｉＭｎ２Ｏ４纳米粉体烧结过程分为三个过程：（１）烧结前期（≤８００℃）;（２）烧结初中期（８００℃￣１０００℃     

Co掺杂ZnO块材的晶体结构和磁性能研究

采用固相法制备了Zn1-xCoxO（x=0．05-0．25）块材,烧结温度和Co含量对Zn1-xCoxO（x=0．05-0．25）块材的晶体结构和室温磁性能影响强烈,当x≤0．1,烧结温度从800增加到1100℃时,Zn1-xCoxO（x=0．05-0．25）呈现出单相结构,但当x〉0．1,烧结温度为800℃时,样品中出现CoO相;随着烧结温度提高到900℃,样品再次获得纯的单相结构。为了获得高的饱和磁化强度Ms,最佳烧结温度应该根据Co含量进行调整。在最佳烧结温度条件下,当x从0．05提高到0．1时,Ms从0．79增加到了1．06μB/Co,但当x继续提高到0．2和0．25时,Ms分别降低到了0．59和0．41μB/Co。     

团聚对中温固体氧化物燃料电池电解质Sm0.15Gd0.05Ce0.8O1.9致密化的影响

采用乙二胺四乙酸（EDTA）-硝酸盐、溶胶-凝胶低温自蔓延燃烧法合成了Sm0.15Gd0.05Ce0．8O1.9（SGDC）纳米粉体，研究了以不同分散方式和分散时间制备的SGDC在各种烧结温度下的致密化行为．为更好地考察团聚对SGDC致密化的影响，本实验引入团聚体系数（Coagulation factor）来具体表征和量化纳米SGDC的团聚程度．结果表明：团聚在烧结过程中，严重阻碍和抑制了SGDC的致密化；在同一烧结温度下，团聚体系数较低的固溶体具有更高的烧结致密度．通过高剪切乳化分散后，SGDC的团聚体系数为1．04时，烧结致密化温度可降低至1300℃．这个温度比以前文献中所报道的1400-1600℃的烧结温度要低得多．通过对团聚的控制，显著改善了SGDC电解质的烧结性能．     

软磁锰锌铁氧体纳米粉体的烧结特性研究

研究了烧结温度和掺杂对软磁锰锌铁氧体材料性能和微观结构的影响。采用传统成型工艺和冷等静压成型相结合,进行分段烧结,研究坯体的致密化程度和晶粒生长情况。烧结体的密度、微观结构和相组成分别采用阿基米德法、扫描电镜（SEM）和X射线衍射仪（XRD）进行测试分析。烧结体的磁性能用振动样品磁强计（VSM）来测定。结果表明：烧结温度在850℃时材料密度、微观结构和磁性能较好,但还未能达到高性能产品的标准,需要通过掺杂等其他手段进行进一步研究。     

热压烧结Ti2AlC粉体的研究

以自蔓延高温合成（又称燃烧合成）的Ti2AlC粉体为原料，研究了不同热压温度对Ti2AlC粉体的烧结影响。实验结果表明，热压烧结Ti2AlC粉料可得到致密Ti2AlC陶瓷，在压力25MPa，保温2h的条件下，理想热压烧结温度为1400℃，热压温度〉1450℃时Ti2AlC会发生分解，并出现Ti2AlC2相；烧结温度为1400℃时Ti2AlC烧结体理论相对密度为98．1％，维氏硬度4．14GPa，断裂韧性7.86MPa·m^1/2；烧结样品的密度和断裂韧性随烧结温度升高而增大，其微观晶粒片状尺寸随烧结温度的升高而增大。     

放电等离子烧结（SPS）制备DyB6多晶块体材料

以微米硼粉和采用氢直流电弧法制备出Dx纳米粉末为原料,利用放电等离子烧结（SPS）技术制备了DyB6多晶块体材料,并分析了烧结温度对样品微观结构及性能的影响。实验结果表明当烧结压力为60MPa,烧结温度为1275℃时,可得到单相DyB6。烧结工艺为1425℃,60MPa所制备样品的密度、维氏硬度和抗弯强度分别为5.191g/cm3、23.32GPa和112.8MPa,当阴极温度为1933K时的发射电流密度为3.6A/cm2。     

微米级α-Al2O3恒速无压烧结显微结构演变的预测

通过高温热膨胀仪对微米级α—Al2O3坯体进行两种升温速率（2℃／min和5℃／min）的恒速无压烧结,利用阿基米德法测量烧结体的相对密度,利用扫描电镜观察样品经不同烧结路径烧结后的显微结构;以Hansen全期烧结模型为基础,根据两种升温速率下得到的烧结曲线,建立了微米级α-Al2O3（平均粒径为2．5μm）主烧结曲线;利用主烧结曲线得到的相对密度和阿基米德法测得的烧结体（经过不同烧结制度）相对密度一致,说明主烧结曲线对烧结路径不敏感,烧结体的相对密度仅是时间和温度的函数,从而证明了所建主烧结曲线的有效性。烧结体的显微结构与烧结体密度密切相关,因此主烧结曲线可以用来预测和控制烧结体的显微结构,进而实现对氧化铝陶瓷性能的预测和控制。     

两面顶低温超高压烧结纳米碳化硅的研究

采用两面顶低温超高压（LT-HP）技术在压力4．5GPa、温度（1250±50）℃、烧结时间20min的条件下烧结制备了纳米碳化硅（SiC）陶瓷，研究了烧结体的物相组成、化学成分、微观结构、显微硬度、纳米压痕力学性能等。结果表明，不添加烧结助剂且在较低温度下获得的SiC烧结体的相对密度高达98．4％，其显微硬度达到HV3520；纳米压痕测试硬度高达H31．74GPa、弹性模量E313GPa；烧结体的晶粒尺寸约为89nm，结构致密，无气孔。     

合成工艺对BiNbO4微波介质陶瓷的影响

本文研究了BiNbO4粉料合成温度及烧结助剂CuO-V2O5添加程序对BiNbO4陶瓷烧结特性及微波介电性能的影响．结果表明：合成温度为850℃／2h及合成后加入烧结助剂CuO-V2O5的BiNbO4陶瓷有高的密度值、较为均匀的晶粒尺寸及良好的介电性能：在100MHz，εr＝49～52，在3GHz，εr＝44，Q＝2000～2300，τr＝38ppm（-40～25℃）；τr＝±6ppm（25～85℃）．     

烧结温度对SiC多孔陶瓷性能的影响

采用反应烧结工艺,通过改变烧结温度,制备出了一系列不同烧结温度下（1 600,1 630,1 660和1 690℃）的SiC多孔陶瓷粉体。通过XRD、SEM、气孔测试、压缩强度测试和油水分离测试等,对SiC多孔陶瓷的物相结构、微观形貌、孔隙率、力学性能等进行了表征。结果表明,随着烧结温度的升高,SiO₂的特征衍射峰强度逐渐升高,在1 690℃时SiO₂的特征衍射峰强度最高;SiC多孔陶瓷的气孔随温度升高呈现出先降低后增加的趋势,在1 660℃时气孔率最低为32.1%;SEM分析发现,1 600和1 630℃下烧结的SiC多孔陶瓷中的小颗粒较多,且SiC多孔陶瓷的颗粒较为分散,随着烧结温度的升高,小颗粒相逐渐减少,SiC多孔陶瓷整体逐渐收缩紧密,晶粒逐渐长大。力学性能分析表明,随着烧结温度的升高,SiC多孔陶瓷的压缩强度先升高后轻微下降,在1 660℃时压缩强度达到了最大值25.6 MPa。油水分离测试发现,随着烧结温度的升高,SiC陶瓷的膜通量出现了先降低后有略微升高的趋势,截留率出现了先升高后轻微降低的趋势,在烧结温度为1 660℃时,膜通...     

用于微电子机械系统封装的体硅键合技术和薄膜密封技术

对静电键合、体硅直接键合和界面层辅助键合等三种体硅键合技术，整片操作、局部操作和选择保护等三种密封技术，以及这些技术用于微电子机械系统的密封作了评述，强调在器件研究开始时应考虑封装问题，具体技术则应在保证器件功能和尽量减少芯片复杂性两者之间权衡决定。     

圆片级气密封装及通孔垂直互连研究

提出了一种新颖的圆片级气密封装结构.其中芯片互连采用了通孔垂直互连技术:KOH腐蚀和DRIE相结合的薄硅晶片通孔刻蚀技术、由下向上铜电镀的通孔金属化技术、纯Sn焊料气密键合和凸点制备相结合的通孔互连技术.整个工艺过程与IC工艺相匹配,并在圆片级的基础上完成,可实现互连密度200/cm2的垂直通孔密度.该结构在降低封装成本,提高封装密度的同时可有效地保护MEMS器件不受损伤.实验还对结构的键合强度和气密性进行了研究.初步实验表明,该结构能够满足MIL-STD对封装结构气密性的要求,同时其焊层键合强度可达8MPa以上.本工作初步在工艺方面实现了该封装结构,为进一步的实用化研究奠定了基础.     

Stability of microelectromechanical devices for electricalmetrology

Microelectromechanical systems (MEMS) have been recently proposed for realizing several references in electrical metrology. Such devices are formed from micromachined electrodes of which at least one is supported by a compliant structure such that an electrostatic force between two electrodes displaces the moving electrode. The properties of these electromechanical devices can be very stable if they are fabricated from single-crystalline silicon and sealed hermetically in a low-pressure atmosphere. In comparison to several semiconducting reference devices, micromechanical components are large in size and consume a negligible power. Thus, a low 1/f noise level is expected. The proposed MEMS electrical references include a DC and an AC voltage reference, an AC/DC converter, a low-frequency voltage divider, a microwave and millimeter-wave detector, a DC current reference, etc. Measurements on a prototype for a MEMS DC reference are discussed. The stability is presently limited by charge fluctuations on the native oxides of electrode surfaces. Preliminary results show relative fluctuations below 1 μV/V     

晶圆直接键合及室温键合技术研究进展

晶圆直接键合技术可以使经过抛光的半导体晶圆,在不使用粘结剂的情况下结合在一起,该技术在微电子制造、微机电系统封装、多功能芯片集成以及其他新兴领域具有广泛的应用。对于一些温度敏感器件或者热膨胀系数差异较大的材料进行键合时,传统的高温键合方法已经不再适用。如何在较低退火温度甚至无需加热的室温条件下,实现牢固的键合是晶圆键合领域的一项挑战。本文以晶圆直接键合为主题,简单介绍了硅熔键合、超高真空键合、表面活化键合和等离子体活化键合的基本原理、技术特点和研究现状。除此之外,以含氟等离子体活化键合方法为例,介绍了近年来在室温键合方面的最新进展,并探讨了晶圆键合技术的未来发展趋势。     

The “LED-version” of the electron gun

We report on our progress to develop and optimize electron sources for practical applications. A simple fabrication process is introduced based on a wafer dicing saw and a wet chemical etch step without the need for a clean room. Due to the formation of crystal facets the samples show a homogeneous geometry throughout the array. Characterization techniques are developed to systematically compare various arrays. A very defined measurement procedure based on current controlled IV-sweeps as well as lifetime measurements at various currents is proposed. To investigate the current distribution in the array a commercial CMOS detector is used and shows the potential for in depth analysis of the arrays. Finally, a compact hermetically sealed housing is presented enabling electron generation in atmospheric pressure environments.     

The Future of Microelectromechanical systems (MEMS)

Abstract:  MEMS-based products produced in 2005 had a value of $8bn, 40% of which was sensors. The balance was for products that included micromachined features, such as ink jet print heads, catheters and RF IC chips with embedded inductors. Growth projections follow a hockey stick curve, with the value of products rising to $40bn in 2015 and $200bn in 2025! Growth to date has come from a combination of technology displacement, as exemplified by automotive pressure sensors and airbag accelerometers and new products, such as miniaturised guidance systems for military applications and wireless tire pressure sensors. Much of the growth in MEMS business is expected to come from products that are in the early stages of development or yet to be invented. Some of these devices include disposable chips for performing assays on blood and tissue samples, which are now performed in hospital laboratories, integrated optical switching and processing chips, and various RF communication and remote sensing products.The key to enabling the projected 25-fold growth in MEMS products is development of appropriate technologies for integrating multiple devices with electronics on a single chip. At present, there are two approaches to integrating MEMS devices with electronics. Either the MEMS device is fabricated in polysilicon, as part of the CMOS wafer fabrication sequence or a discrete MEMS device is packaged with a separate ASIC chip. Neither of these approaches is entirely satisfactory, though, for building the high-value, system-on-chip products that are envisioned. It is this author's opinion that a combination of self-assembly techniques in conjunction with wafer stacking, offer a viable path to realizing ubiquitous, complex MEMS systems.     

Purple plague: Eliminated or just forgotten?

The reappearance of ‘purple plague’ as a reliability and failure risk in current IC devices has led to renewed interest in the precise failure mechanisms and eventual failure mode. These are outlined and illustrated with examples of recent failures in plastic encapsulated integrated circuits, hermetically sealed integrated circuits and hybrids. The reasons for the reappearance of this type of failure are discussed, and it is shown that the problem may be expected to increase in future generation devices.     

Vacuum sealing using surface activation bonding of Si wafer

Bonding technology of Si wafer for vacuum seal is important in MEMS. We have tried the vacuum seal using surface activation bonding without any binder. It is the ultimate bonding technique and gives the precise dimension due to the direct contact. The technique is, however, not easy. We have investigated the surface conditions in order to achieve the bonding. The surfaces cleaned by Ar ion beam bombardment were measured by XPS and AFM. The natural oxide on the Si surface was removed by Ar ion bombardment. The surface roughness depended on the condition and the irradiation time of the Ar ion beam. The surface bonding at room temperature was achieved for the clean surface of the surface roughness less than Ra = 1 nm, but it was not done with the rough surfaces more than Ra > 2 nm. The vacuum sealing was checked using the cavities made in the Si wafer. The cavity part sealed in vacuum was depressed in the atmosphere, which was measured using a needle-contact profiler and a 3D laser profiler. The gas in the cavity was measured with a mass spectrometer by clashing the seal in vacuum. Any other gas except Ar gas closed in the cavity was not detected. We concluded that the vacuum sealing using surface activation bonding of Si wafer was achieved. The sealing condition has not changed even after one year.     

Monolithic integration of microfluidic channels and optical waveguides in silica on silicon

Sealing of the flow channel is an important aspect during integration of microfluidic channels and optical waveguides. The uneven topography of many waveguide-fabrication techniques will lead to leakage of the fluid channels. Planarization methods such as chemical mechanical polishing or the etch-back technique are possible, but troublesome. We present a simple but efficient alternative: By means of changing the waveguide layout, bonding pads are formed along the microfluidic channels. With the same height as the waveguide, they effectively prevent leakage and hermetically seal the channels during bonding. Negligible influence on light propagation is found when 10-mum-wide bonding pads are used. Fabricated microsystems with application in absorbance measurements and flow cytometry are presented.     

Miniature and MEMS-type vacuum sensors and pumps

In the paper, the observable trends of the actual research and development of selected types of miniature and MEMS-type vacuum sensors are presented. Some information about the new types of active vacuum gauges, which are offered by the leading manufacturers of the vacuum measurement instruments, is given. Next, the list of MEMS devices that need vacuum for proper operation is presented. Some aspects of vacuum-encapsulation of MEMS devices, on wafer level and package level are shown. The new conceptions of obtaining and maintenance of high and ultra-high vacuum in MEMS devices are described. They concern the conception of integration of a miniature orbitron pump on-chip with MEMS-type device or with vacuum part of the portable advanced instruments such as electron microscope, ion mass spectrometer, and free electron laser.