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1.
We investigate the spin-dependent transport properties of quantum-dot based structures where Kondo correlations dominate the electronic dynamics. The coupling to ferromagnetic leads with parallel magnetizations is known to give rise to nontrivial effects in the local density of states of a single quantum dot. We show that this influence strongly depends on whether charge fluctuations are present or absent in the dot. This result is confirmed with numerical renormalization group calculations and perturbation theory in the on-site interaction. In the Fermi-liquid fixed point, we determine the correlations of the electric current at zero temperature (shot noise) and demonstrate that the Fano factor is suppressed below the Poissonian limit for the symmetric point of the Anderson Hamiltonian even for nonzero lead magnetizations. We discuss possible avenues of future research in this field: coupling to the low energy excitations of the ferromagnets (magnons), extension to double quantum dot systems with interdot antiferromagnetic interaction and effect of spin-polarized currents on higher symmetry Kondo states such as SU(4). 相似文献
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Conductance G, through coupled quantum dots in series isinvestigated below the Kondo temperature, based on the slaveboson formalism of the Anderson model with theantiferromagnetic spin–spin coupling J. Electron transport ischaracterized by the ratio of the dot–dot tunneling couplingV
C
to the level broadening in the dots (dot-lead coupling). When V
C
/<1, the Kondoresonance is formed in each dot and lead and G is determinedby hopping between the two Kondo states. They are replaced bya spin-singlet state in the dots for low gate voltages. Thegate voltage dependence of G has a sharp peak of 2e
2
/h inheight in the crossover region between the spin-singlet andKondo states. When V
c
/>1, the Kondo levelsare split below and above the Fermi level in the leads for lowgate voltages. The gate voltage dependence of G has a broadpeak, which is fairly robust against J. This broad peak isdivided into two peaks when the energy levels are differentbetween the dots. 相似文献
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采用原位成核掺杂法合成了Li、Zn金属离子掺杂的InP量子点(分别记为Li: InP和Zn: InP), 并研究了掺杂剂对量子点的结构、尺寸和光学性能的影响。研究结果表明, Li+、Zn2+掺杂的InP量子点结晶度较高且尺寸均匀。虽然Li+掺杂未引起InP量子点的结构发生变化, Li+未进入InP晶格, 但是抑制了InP量子点的成核与长大, 使其吸收谱和荧光谱均发生大幅度的蓝移。Zn掺杂同样也抑制InP量子点的成核与长大, 并且形成InP/Zn3P2/ZnO复合核壳结构, 显著增强了InP量子点的荧光, 尤其是当Zn掺杂浓度(Zn/In原子比)为0.2时, InP量子点的荧光强度增加近100多倍, 这对短波长InP量子点的合成具有一定的参考价值。 相似文献
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J. Martinek J. Barna G. Schön S. Takahashi S. Maekawa 《Journal of Superconductivity》2003,16(2):343-346
It is shown that nonequilibrium spin fluctuations significantly influence electronic transport in a single-electron transistor, when the spin relaxation on the island is slow. To describe spin fluctuations, the orthodox tunneling theory is generalized by taking into account the electron spin. It is shown that the transition between consecutive charge states can occur via high-spin states, which significantly modifies the shape of Coulomb steps and gives rise to additional resonances at low temperatures. 相似文献
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硫化铜量子点作为一种p型半导体纳米晶,具有很强的表面等离子体共振效应、低的毒性以及独特的光学和电学性能,在光催化、生物技术、光电转换材料领域受到了极大关注。由于单分散的硫化铜量子点的制备过程复杂,效率较低,并且纯的硫化铜量子点电导率较低,这极大地限制了其在能量存储器件方面的应用。此外,由于硫化铜量子点复杂的能带结构和独特的p型半导体特性,针对硫化铜量子点的光学性能调控尚不成熟。基于此,本文综述了硫化铜量子点在制备方面的研究现状与取得的进展,介绍了硫化铜量子点的能带结构、晶体结构,及其在量子点敏化太阳能电池、光催化降解污染物、肿瘤细胞诊断与治疗等方面的研究进展,并对硫化铜量子点或Cu系量子点更进一步的研究、开发应用提出了几点建议。 相似文献
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首次采用固相外延生长技术在Si(001)表面直接生长Sn量子点,并应用原子力显微镜(AFM)、X射线衍射(XRD)和同步辐射傅里叶红外光谱(FTIR)研究了退火条件对量子点样品的表面形貌、结晶性和红外光学性质的影响.AFM结果表明,随着退火温度的升高和退火时间的延长,量子点的平均尺寸变大,面密度减小.XRD结果显示,外延得到的Sn量子点为四方结构的β-Sn,与衬底的相对取向为Sn(110)//Si(001).由于β-Sn量子点的尺寸仍较大,同步辐射FTIR谱中没有观察到量子点的特征吸收峰. 相似文献
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We present the review of our work on spin effects in single lateral quantum dots with the emphasis on the results of Coulomb blockade spectroscopy studies. Realization of a spin-based quantum bit proposal in a lateral quantum dot is discussed. Described are the ways of isolating a single electron spin in a dot containing only one as well as many electrons. Demonstrated is a current readout of spin transitions in a dot by means of spin blockade spectroscopy due to spin polarized injection/detection mechanism in a lateral dot. Discussed are transitions induced both by changing a magnetic field and a number of electrons in a dot with the emphasis on the effects observed close to filling factor in a dot = 2. 相似文献
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目的 探索木质素碳量子点(CQDs)荧光油墨及其书写式标签、CQDs/聚乙烯醇(PVA)复合荧光薄膜在防伪包装中的应用潜力。方法 以木质素为碳源,采用一锅水热法得到未掺杂碳量子点O-CQDs和硫掺杂碳量子点S-CQDs,并以此为荧光填料,以乙醇、乙二醇和丙三醇的混合液为溶剂,制备荧光油墨及其书写式荧光标签和CQDs/PVA复合荧光薄膜,探索其荧光防伪性能。结果 硫掺杂木质素碳量子点油墨MS-CQDs及其书写标签、PVA复合薄膜在可见光下均无色,在365 nm紫外光照下则呈现强烈的淡蓝色荧光。结论 MS-CQDs书写式称量纸荧光标签及其与PVA的复合薄膜均具有良好的荧光性能,在荧光防伪领域具有良好的应用潜力。 相似文献
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Hyungsuk Moon Changmin Lee Woosuk Lee Jungwoo Kim Heeyeop Chae 《Advanced materials (Deerfield Beach, Fla.)》2019,31(34)
Quantum dots (QDs) are being highlighted in display applications for their excellent optical properties, including tunable bandgaps, narrow emission bandwidth, and high efficiency. However, issues with their stability must be overcome to achieve the next level of development. QDs are utilized in display applications for their photoluminescence (PL) and electroluminescence. The PL characteristics of QDs are applied to display or lighting applications in the form of color‐conversion QD films, and the electroluminescence of QDs is utilized in quantum dot light‐emitting diodes (QLEDs). Studies on the stability of QDs and QD devices in display applications are reviewed herein. QDs can be degraded by oxygen, water, thermal heating, and UV exposure. Various approaches have been developed to protect QDs from degradation by controlling the composition of their shells and ligands. Phosphorescent QDs have been protected by bulky ligands, physical incorporation in polymer matrices, and covalent bonding with polymer matrices. The stability of electroluminescent QLEDs can be enhanced by using inorganic charge transport layers and by improving charge balance. As understanding of the degradation mechanisms of QDs increases and more stable QDs and display devices are developed, QDs are expected to play critical roles in advanced display applications. 相似文献
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M. Ghali T. Kümmell R. Arians J. Wenisch S. Mahapatra K. Brunner G. Bacher 《Journal of Superconductivity and Novel Magnetism》2007,20(6):413-416
We demonstrate spin injection from a n-Zn0.96Mn0.04Se layer into individual InAs quantum dots (SQDs) in a p–i–n diode structure using cw polarization resolved magneto-micro photoluminescence spectroscopy. Interestingly, we find that the spin injection efficiency
strongly varies from dot to dot. We obtain a single quantum dot circular polarization degree ranging from 2% to almost 50%
(at B=4 T) at zero biasing and within the spectral range studied here, we found 2 maxima of the degree of the circular polarization
at SQD energies separated by ∼33 meV. Importantly, we demonstrate that the spin injection efficiency can be manipulated by
external forward biasing (U
ext). 相似文献
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介绍了半导体量子点材料禁阻类型,详细阐述了共熔法、溶胶-凝胶法、离子注入法等半导体量子点玻璃材料的制备方法,探讨了半导体量子点玻璃的尺寸效应、禁阻效应、库仑阻塞效应和非线性光学效应等特性及其未来应用前景. 相似文献
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以L-半胱氨酸为稳定剂在水溶液中合成CdSe纳米粒子,研究了水浴时间、水浴温度、不同L-半胱氨酸/Cd/Se比例、pH值等因素对其荧光光谱的影响,确定了最佳的合成方案.用CdS对其表面进行修饰,采用透射电镜、X射线衍射、光谱法等表征了Cdse/CdS核壳结构颗粒的形成,结果表明该纳米粒子发光强度明显高于单一的CdSe量子点,光谱峰位置有所红移;合成条件会显著影响CASe/CAS核壳结构量子点的荧光性能. 相似文献
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介绍了CuInS2量子点的合成方法及在几种结构的太阳电池(如全无机纳米结构太阳电池、染料敏化电池及聚合物太阳电池)中的应用,尤其是针对聚合物太阳电池,分析了器件效率低的原因并提出了提高该类太阳电池效率的方法。 相似文献
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采用高温熔融-退火法在钠硼铝硅酸盐(SiO2-B2O3-Na2O-Al2O3-ZnO-AIF3-Na2O)玻璃中生长了PbSe量子点,通过X射线衍射(XRD)、透射电镜(TEM)、光致荧光(PL)谱等研究了玻璃配料中不同ZnO含量对PbSe量子点尺寸和浓度的影响,结果表明,ZnO含量占总玻璃配料质量比约9.4%时,生成的量子点尺寸比较均匀,直径约为6.5nm,且浓度较高,PL谱强度最强,辐射峰位于1790nm,FWHM为296nm。玻璃配料中加入适量的ZnO有助于PbSe量子点的形成,减少Se元素的挥发,使玻璃中的量子点尺寸分布趋于均-化。 相似文献