加强电子对抗力量建设 争取未来战争主动权

2011年5月16日,美国出台了由总统奥巴马签署的《网络空间国际战略》,这一举动产生了巨大的国际影响,标志着美国正式开始实施网络空间国际战略。除美国外,韩国、英国、日本、印度等国也都在纷纷筹划网络战指挥体制、机制的建设。网络空间已成为大国博弈的新战场。网络空间战少不了电子对抗,电子对抗作为电子战的重要手段之一,是利用电子设备或器材进行电磁权的斗争,从而使敌方电子设备效能降低或失效,同时又保证己方电子设备效能得到充分发挥。     

海战场电子战技术发展研究

根据海战场电子战的特点,在分析了海上电子侦察、电子干扰面临的新挑战和海战场电子战新课题基础上,对海战场电子战技术发展进行了研究,在电子战系统总体研究、复杂电磁环境适应性、综合对抗能力和电子战新领域研究等方面提出了一些建议和思路。     

2021年外军电磁频谱作战发展综述

2021年全球电子战领域继续呈现强劲的发展态势,获取战场电磁频谱优势已成为各国军事发展的重点。其中,美军尤为重视电磁频谱优势,其通过重构组织机构、研发新技术和部署新装备等手段,构建更强大的电磁频谱作战能力,推动认知电子战、高功率微波等技术投入实用。除美国外,英国、日本、俄罗斯等国家也加快了电子战技术装备研发。文中从战略规划、组织编制、技术装备和训练应用四个方面对2021年外军电磁频谱作战重大发展进行综述。     

未来信息化战争中的综合电子战

信息战争形态的出现和发展没有降低电子战的地位和作用，综合电子战在信息化战场上有着更加广阔的作战空间。电磁空间不仅是综合电子战的作战空间，也必须将成为心理战、计算机网络战乃至一切作战行动严重依赖的作战空间。未来信息化战场上夺取制信息权，综合电子战是主要作战形式。综合电子战的发展应着眼于信息战争特点和军事斗争准备实际，以“有限消耗”、“局部制电磁权”和“全面制电磁权”作为电子战三级效能指标建立具有我军特色的军事理论体系，规划和发展综合电子战武器装备体系，进行军事斗争准备和部队训练。     

量子技术在电子战中的应用与发展

量子信息技术作为一种正在快速发展的军用技术,极大可能改变未来战场局势.将量子信息技术应用到电子战领域,主动发展"量子-电子战"技术,应对量子雷达的颠覆性挑战、全面提升电子战系统能力,是技术演进与产业升级的必然趋势.文章分析了量子信息技术发展现状以及与电子战融合发展的方式,提出发展思路,简要介绍正在开展的量子雷达对抗、微...     

通信电子战系统电磁环境适应性分析

从电磁环境适应性的概念入手,讨论了战场电磁环境的数学描述,提出了电磁环境适应性的分析方法,并依据系统性能和电磁兼容标准,为通信电子战系统电磁环境适应能力提供了一个评估准则。该分析方法对电磁环境适应性预测具有一定的参考价值。     

电子战复杂电磁环境模拟技术

概述了战场复杂电磁环境存在各种各样的电磁信号,简述了国内外研究现状,提出了电磁环境模拟关键技术、实现方式和实现手段,给出了部分模拟结果,建立了电子战复杂电磁环境模拟系统,并阐述了模拟子系统的功能,为军队的作战、训练和建设,以及装备的研制提供重要的技术支撑.     

舰载电子战系统的雷达电磁环境仿真

将舰载电子战系统的雷达电磁环境以PDW的集合流描述，并在此基础上建立PDW形式的雷达脉冲模型，通过计算机软件仿真出舰载电子战系统在现代战场上将遇到的雷达电磁环境。     

联合电子战架构及应用分析

结合电子战领域的发展情况,参考美军电子战相关理论,首次以电磁空间联合作战为核心给出联合电子战的定义,并与传统电子战进行了对比分析。同时,在分析传统经典作战理论的基础上,创新提出基于"三三制"的联合电子战应用架构和基于"云网端"的联合电子战技术架构,并针对空中和海上典型联合作战样式,对提出的联合电子战架构进行应用分析,验证了架构的合理性。     

网络安全:均衡、主权与军控

基于网络空间的均衡、主权和军控三个方面思考网络空间安全问题。首先,指出网络建设、网络应用和网络安全相互协调配合才能促进网络空间健康发展;其次,指出数据主权是最特殊的和难以处理的网络空间主权,网络主权范围大小取决于国家能力大小,并且需要均衡网络空间排他性主权范围与网络空间主权权利让渡之间关系;最后,阐述了网络空间国际军备控制正在走近的事实,并指出该领域应该重点关注的问题。     

Switching in m.i.s.m. and m.i.s.i.m. structures

Switching has been observed in metal?thin-insulator?n-p+ structures, where the thin insulator is SiO2, or polycrystalline silicon. In this letter two alternative structures are discussed in which the n-p+ junction is replaced by a Schottky barrier. In the second device proposed two thin-insulator structures back-to-back are shown to exhibit bidirectional switching.     

GaAs m.a.o.s.f.e.t. memory transistor

A new non-volatile memory device is reported. This device is a GaAs m.o.s.f.e.t. with charge storage in the gate in which is a double oxide structure of aluminium oxide and GaAs native oxide, both oxides are grown anodically. The fabrication of the device is described and the results of initial measurements on the charging and charge retention properties are presented.     

U.H.F. low-noise GaAs m.e.s.f.e.t. amplifier for colour t.v. broadcasting translator

Low-noise amplifiers for u.h.f. colour t.v. broadcasting translator use have been successfully developed by using 1 ?m gate GaAs m.e.s.f.e.t.s. The obtained performances revealed that a GaAs m.e.s.f.e.t. has low-noise and low intermodulation distortion characteristics, even in the 500?800 MHz frequency range, compared with a Si bipolar transistor.     

Current-kink noise of n-channel enhancement e.s.f.i.-m.o.s. s.o.s. transistors

An experimental study of the low-frequency-noise properties of n-channel epitaxial silicon films on insulator m.o.s. s.o.s. transistors has been performed. The measurements show an excessive noise contribution at drain voltages corresponding to the current-kink effect for temperatures ranging from 4.2 to 300 K.     

Noise behaviour of the m.o.s.f.e.t. at v.h.f. and u.h.f.

The optimum noise figures of an m.o.s.f.e.t. at u.h.f. and at pinch-off are calculated using a simplified equivalent circuit. The noise parameters are also determined experimentally. Theory and experiment are shown to be in good agreement. Noise parameters of the m.o.s.f.e.t. for the frequency range 0.1?0.8 GHz are given.     

Wide-range monolithic bipolar?j.f.e.t. c.c.o.

A new monolithic current-controlled oscillator (c.c.o.) has been realised in a j.f.e.t.-bipolar technology. Its main advantages are a highly-linear seven decade frequency range and easy temperature compensation for frequency and output voltage.     

V.H.F. and u.h.f. Gunn-effect oscillators

In this letter, the use of the Gunn device as a broadband negative resistance, somewhat analogous to a tunnel diode, is explored. v.h.f. and u.h.f. oscillators are described; the frequency is determined by an external resonant circuit and is very nearly independent of the parameters of the Gunn-effect sample.     

Power m.o.s.f.e.t. linear h.f. amplifiers

N-channel silicon m.o.s. transistors for h.f. power applications have been fabricated which are optimised for linear amplification. These devices exhibit 2 W output power and 11 dB power gain at 630 MHz in class-A operation. The intercept point for third-order intermodulation distortion is 48dBm, which is considerably more than the same data obtainable with bipolar transistors.     

More active RC filters using the d.v.c.c.s./d.v.c.v.s.

Novel configurations using a differential-voltage-controlled current source, differential-voltage-controlled voltage source (d.v.c.c.s./d.v.c.v.s.) as the active building block are described. The configurations assume that the active building block is divided into two independent parts initially.     

New n-channel m.o.s.f.e.t.s

By using plasma c.v.d. and lift-off, an n-channel m.o.s.f.e.t. with effective channel length of 0.4 ?m has been fabricated. Its main fabrication processes and obtained electrical characteristics are described.