共查询到18条相似文献,搜索用时 212 毫秒
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ULSI中的铜互连线RC延迟 总被引:2,自引:0,他引:2
随着ULSI向深亚微米特征尺寸发展,互连引线成为ULSI向更高性能发展的主要限制因素。由互连引线引起的串扰噪音及RC延迟限制了ULSI的频率性能的提高,同时考虑到电迁移和功率损耗,人们开始寻找新的互连材料;低电阻率的铜互连材料和低介电常数介质的结合可以有效地发送互连线的性能,主要讨论了互连延迟的重要性以及发送和计算延迟的方法。 相似文献
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以p型111硅片为衬底,经过旋涂固化制备低介电常数(低k)材料聚酰亚胺。经过化学机械抛光(CMP)过程,考察实验前后低k材料介电性能的变化。实验中分别使用阻挡层抛光液、Cu抛光液以及新型抛光液对低k材料进行抛光后,利用电参数仪对低k材料进行电性能测试。结果显示,低k材料介电常数经pH值为7.09新型抛光液抛光后,k值由2.8变为2.895,漏电流在3.35 pA以下,去除速率为59 nm/min。经新型抛光液抛光后的低k材料,在电学性能等方面均优于阻挡层抛光液和Cu抛光液,抛光后的低k材料的性能能够满足应用要求。 相似文献
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集成电路片内铜互连技术的发展 总被引:8,自引:0,他引:8
论述了铜互连取代铝互连的主要考虑,介绍了铜及其合金的淀积、铜图形化方法、以及铜与低介电常数材料的集成等。综述了ULSI片内铜互连技术的发展现状。 相似文献
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本文论述了下游式等离子体在多种Cu/低k材料上去胶及去残留物的工艺应用,主要有3类低k材料的实验数据——有机类、掺氮氧化物和多孔性低k材料,同时论述了在这些对应低k材料上新的等离子体气氛:(1)中性等离子体;(2)无氧和还原性等离子体;(3)无氧和无氮等离子体。 相似文献
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We explain how the manufacturing technology and reliability for advanced interconnects is impacted by the choice of metallization and interlayer dielectric (ILD) materials. The replacement of aluminum alloys by copper, as the metal of choice at the 130-nm technology node, mandated notable changes in integration, metallization, and patterning technologies. Those changes directly impacted the reliability performance of the interconnect system. Although further improvement in interconnect performance is being pursued through utilizing progressively lower dielectric constant (low-k) ILD materials from one technology node to another, the inherent weak mechanical strength of low-k ILDs and the potential for degradation in the dielectric constant during processing pose serious challenges to the implementation of such materials in high-volume manufacturing. We consider the cases of two ILD materials, carbon-doped silicon dioxide and low-k spin-on-polymer, to illustrate the impact of the ILD choice on the process technology and reliability of copper interconnects. 相似文献
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MatthewEgbe MichaelLegenza RickHsu ThomasWieder JohnZavecz JenniferRieker 《电子工业专用设备》2005,34(7):18-22
一种成功的抗蚀剂和刻蚀残渣去除胶机必须满足大批量IC制造环境中可接受的3个条件:(1)与灵敏低K介质材料的兼容性;(2)去除抗蚀剂和刻蚀残渣;(3)与基质金属包括铜、钴、钨等金属的兼容性。而AirProdul公司的EZ系列去胶机成功地满足了这些要求。一些含氟化物的产品与灵敏的低k介质,例如多孔的低k材料、HSQ和其它超低k材料是能够很好共处的。对由测量刻蚀速率以及键合保留物和暴露于这些除胶机的覆盖膜组成的介质材料确定的兼容性进行了评价,并对作图衬底的浸泡试验所确定的清洗效力也一并进行了评价。 相似文献
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低压力Cu布线CMP速率的研究 总被引:1,自引:1,他引:0
采用低介电常数材料(低k介质)作为Cu布线中的介质层,已经成为集成电路技术发展的必然趋势.由于低k介质的低耐压性,加工的机械强度必须降低,这对传统化学机械抛光(CMP)工艺提出了挑战.通过对CMP过程的机理分析,提出了影响低机械强度下Cu布线CMP速率的主要因素,详细分析了CMP过程中磨料体积分数、氧化剂体积分数、FA/O螯合剂体积分数等参数对去除速率的影响.在4.33 kPa的低压下通过实验得出,在磨料体积分数为20%,氧化剂体积分数为3%,FA/O螯合剂体积分数为1.5%时可以获得最佳的去除速率及良好的速率一致性. 相似文献
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Y. -L. Shen 《Journal of Electronic Materials》2005,34(5):497-505
Numerical simulations of thermal stresses in copper (Cu) interconnect and low-k dielectric systems are carried out. The three-dimensional
(3-D) finite-element analysis assumes a two-level metal structure connected by a via. Mechanical deformation is generated
by thermal expansion mismatches during cooling and cyclic temperature changes. The thin barrier/etch stop layers, as well
as oxide or polymer-based low-k dielectric materials, are all taken into account in the model. The stress and deformation
fields are examined in detail; salient features having direct implications in device reliability are illustrated with representative
contour plots. It is found that the use of low-k material in place of traditional oxide dielectric significantly reduces the
triaxial tensile stresses in Cu but enhances plastic deformation, especially in the via region. The compliant low-k material
causes the thin barrier layers to bear very high stresses. Deformation in the Cu line and via structure is more affected by
the thermal expansion property of the dielectric, but the stresses in the barrier layers are more influenced by the elastic
modulus of the dielectric. 相似文献
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Govoreanu B. Blomme P. Rosmeulen M. Van Houdt J. De Meyer K. 《Electron Device Letters, IEEE》2003,24(2):99-101
Low-voltage low-power nonvolatile floating-gate memory device operation can be achieved by using alternative tunnel barriers consisting of at least two dielectric layers with different dielectric constants k. Low-k/high-k (asymmetric) and low-k/high-k/low-k (symmetric) barriers enable steeper tunneling current-voltage characteristics. Their implementation is possible with high-k dielectric materials that are currently investigated for SiO/sub 2/ replacement in sub-100-nm CMOS technologies. We show that a reduction in programming voltages of up to 50% can be achieved. This would significantly reduce the circuitry required to generate the high voltages on a nonvolatile memory chip, while maintaining sufficient performance and reliability. 相似文献
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Zhe Chen Prasad K. Gan Z.H. Wu S.Y. Mehta S.S. Jiang N. Mhaisalkar S.G. Kumar R. Li C.Y. 《Electron Device Letters, IEEE》2005,26(7):448-450
The interface quality and reliability issues have shown significant importance in Cu/organic low-k damascene integration. In this letter, a post-etch in-line electron beam (E-beam) treatment was used to modify the interface properties of sidewall barrier/organic low-k dielectric without impairing either the film properties or the dielectric constant. X-ray photoelectron spectroscopy (XPS) analysis indicated that oxygen content at the low-k surface, which mostly came from oxygen/moisture intake from ambient during process, was eliminated by E-beam exposure and subsequent rapid thermal annealing. As a result, Cu/organic low-k interconnects exhibited a lower line-to-line leakage current and a higher breakdown strength. The interconnect structures, after this in-line E-beam treatment process, also showed a good reliability performance against thermal stress, with good leakage current characteristics after a 500-h burn-in at 200/spl deg/C. 相似文献