Metallic Nanowire Coupled CsPbBr3 Quantum Dots Plasmonic Nanolaser

Plasmonic nanolasers provide a valuable opportunity for expanding sub-wavelength applications. Due to the potential of on-chip integration, semiconductor nanowire (NW)-based plasmonic nanolasers that support the waveguide mode attract a high level of interest. To date, perovskite quantum dots (QDs) based plasmonic lasers, especially nanolasers that support plasmonic-waveguide mode, are still a challenge and remain unexplored. Here, metallic NW coupled CsPbBr₃ QDs plasmonic-waveguide lasers are reported. By embedding Ag NWs in QDs film, an evolution from amplified spontaneous emission with a full width at half maximum (FWHM) of 6.6 nm to localized surface plasmon resonance (LSPR) supported random lasing is observed. When the pump light is focused on a single Ag NW, a QD-NW coupled plasmonic-waveguide laser with a much narrower emission peak (FWHM = 0.4 nm) is realized on a single Ag NW with the uniform polyvinylpyrrolidone layer. The QDs serve as the gain medium while the Ag NW serves as a resonant cavity and propagating plasmonic lasing modes. Furthermore, by pumping two Ag NWs with different directions, a dual-wavelength lasing switch is realized. The demonstration of metallic NW coupled QDs plasmonic nanolaser would provide an alternative approach for ultrasmall light sources as well as fundamental studies of light matter interactions.     

Manipulable and Hybridized,Ultralow‐Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods

Manipulating stimulated‐emission light in nanophotonic devices on scales smaller than their emission wavelengths to meet the requirements for optoelectronic integrations is a challenging but important step. Surface plasmon polaritons (SPPs) are one of the most promising candidates for sub‐wavelength optical confinement. In this study, based on the principle of surface plasmon amplification by the stimulated emission of radiation (SPASER), III‐Nitride‐based plasmonic nanolaser with hybrid metal–oxide–semiconductor (MOS) structures is designed. Using geometrically elliptical nanostructures fabricated by nanoimprint lithography, elliptical nanolasers able to demonstrate single‐mode and multimode lasing with an optical pumping power density as low as 0.3 kW cm^?2 at room temperature and a quality Q factor of up to 123 at a wavelength of ≈490 nm are achieved. The ultralow lasing threshold is attributed to the SPP‐coupling‐induced strong electric‐field‐confinement in the elliptical MOS structures. In accordance with the theoretical and experimental results, the size and shape of the nanorod are the keys for manipulating hybridization of the plasmonic and photonic lasing modes in the SPASER. This finding provides innovative insight that will contribute to realizing a new generation of optoelectronic and information devices.     

Short‐Wavelength Lasing‐Spasing and Random Spasing with Deeply Subwavelength Thin‐Film Gain Media

Lasing‐spasers are subwavelength‐sized metal/dielectric structures that emit light via stimulated emission of surface plasmons. Here, it is demonstrated that silver nanoparticles combined with deeply subwavelength, blue‐emitting conjugated polymer thin films can function as room‐temperature lasing‐spasers and random spasers with quality factors up to 250. In contrast to other thin‐film‐based spaser and plasmonic random laser studies, which have used gain films ranging from ≈200 nm to 500 nm in thickness and which monitor emission guided to the sample edges, in this study, the thickness of the thin‐film gain medium ranges from 30 nm to 70 nm and emission is collected normal to the plane of the film. This eliminates effects that arise from optical trapping of scattered emission within the gain medium that is typically associated with plasmonic random lasing. The use of the conjugated polymer thin‐film gain medium allows higher chromophore densities compared to organic dye‐doped layers, which enables spasing using deeply subwavelength gain layers. Samples implementing gold nanoparticles and the conjugated polymer gain medium do not exhibit stimulated emission, demonstrating that it is the spectral overlap between the silver nanoparticle's surface plasmon resonance and the gain medium's emission that is necessary for observation of stimulated emission from this material system.     

Light Amplification and Efficient Electroluminescence from a Solution-Processable Diketopyrrolopyrrole Derivative via Triplet-to-Singlet Upconversion

Over the years, achieving efficient electroluminescence (EL) while simultaneously having low light amplification thresholds under optical excitation has been the key to progression toward the long-thought objective of electrically pumped organic lasers. While significant progress in this regard has been made for organic semiconductors emitting in the blue–green region of the visible spectrum, organic laser dyes with low-energy emission (>600 nm) still suffer from high amplified spontaneous emission (ASE) thresholds and low external quantum efficiencies (EQEs) in devices. Herein, low ASE thresholds and efficient EL are reported from a solution-processable organic laser dye dithiophenyl diketopyrrolopyrrole (DT-DPP). The ASE threshold of 4 µJ cm⁻² at the wavelength of 620 nm is obtained while making constructive use of triplet excitons by doping DT-DPP in a green-emitting host matrix, which exhibits thermally activated delayed fluorescence (TADF). The organic light-emitting diode fabricated from this system gives a high EQE of 7.9% due to the efficient utilization of triplet excitons. Transient EL studies further show that a high reverse intersystem crossing rate is crucial in achieving lasing under electrical pumping from such TADF-assisted fluorescent systems.     

Cathodoluminescence Modulation of ZnS Nanostructures by Morphology,Doping, and Temperature

Spatially and spectrally resolved cathodoluminescence (CL) is one of the most effective methods to explore the optical properties of a nanomaterials and reveals the spatial distribution as well as the correlation between the luminescence and the sample morphology and microstructure. Here, CL modulation of ZnS nanostructures by controlled morphologies, Fe/Mn doping, and measurement temperature is demonstrated. High quality ZnS nanobelts and nanorods are synthesized on an Au‐coated Si substrate and an Au‐coated GaAs substrate via a facile thermal evaporation route. A room‐temperature sharp ultraviolet (UV) lasing‐like peak in various ZnS is achieved. The main UV luminescence peaks appear at wavelengths between 330 and 338 nm. The low temperature (32 K) CL spectrum consists of a narrow and strong UV peak centered at 330 nm and two broad, low‐intensity peaks in the visible region (514 and 610 nm). Temperature‐dependent CL from such single‐crystalline ZnS nanobelts in the temperature range of 32 to 296 K reveals two UV peaks at 3.757 and 3.646 eV. The effects of Fe doping and Fe/Mn co‐doping on the CL property of ZnS nanobelts are further investigated. These results imply that ZnS nanostructures can be used for potential luminescent materials as well as short‐wavelength nanolaser light sources.     

Exciton Dynamics and Optically Pumped Lasing in 1-Naphthylmethylamine-Based Quasi-2D Perovskite Films

Films of the quasi-2D perovskite based on 1-naphthylmethylamine (NMA) are promising as the gain medium for optically pumped lasing and future electrically pumped lasing because of its low lasing threshold and small electroluminescence efficiency rolloff. However, reasons for the low threshold and small efficiency rolloff are still unclear. Therefore, exciton dynamics are investigated in NMA-based quasi-2D perovskite films. It is found that quenching of bright excitons by other excitons or charge carriers is unlikely in NMA-based quasi-2D perovskite films, which is one reason for the low lasing threshold and small efficiency rolloff. Moreover, thermally stimulated current measurements reveal that the defect levels inside the band gap of the NMA-based quasi-2D perovskite are shallow, with a depth of ≈0.3 eV, causing a decrease in nonradiative exciton recombination through the defects. Therefore, population inversion can be easily achieved, leading to the low lasing threshold as well. For fabrication of NMA-based quasi-2D perovskite laser devices with even lower lasing thresholds, a circular-shaped optical resonator, and small-molecule-based defect passivation are used. Optically pumped lasing can be obtained from these devices, with a threshold of ≈1 µJ cm⁻², which is one of the lowest values ever reported in any perovskite lasers.     

Enhanced localized near field and scattered far field for surface nanophotonics applications

The scattering physics of photons is traced back to Rayleigh scattering theory in 1871 and Mie scattering theory in 1908. However, the scattering near field and far field have recently emerged again as a new fundamental physics and innovative nanoprocessing technology in quantum electronics and photonic devices. An enhanced near field generated by plasmonic particles can concentrate optical energy into a nanoscale space as a nanolens even with near infrared laser pumping. This plasmonic nanophotonics extends the existing optical science to a new class of photonics inclusive of surface enhanced Raman scattering, nanoprocessing of advanced electronic and photonic materials, etc. The Mie scattering near field also opens up new fields. The Anderson localization of light in a planar random photonic crystal laser is also a new class of quantum electronics devices, where Slow Bloch Mode is scattered by artificial structural randomness in a photonic crystal. In this contribution we will review the recent efforts of our scattering photonics research, which have resulted in significant advances in the plasmonic surface photonics of near-field and far-field nano/micro photonics and the Anderson localization in random lasing.     

Sol-gel ZnO-SiO/sub 2/ composite waveguide ultraviolet lasers

Random laser action with coherent feedback is realized in ZnO-SiO/sub 2/ composite films, which consists of ZnO clusters embedded in SiO/sub 2/ dielectric matrix prepared by sol-gel technique. The films are deposited on silicon substrate with a SiO/sub 2/ buffer layer to form a waveguide structure. Ultraviolet lasing at room temperature is observed from the composite films with ZnO : SiO/sub 2/ molar ratio varying between 1 : 5 and 1 : 30. The corresponding lasing wavelength and linewidth under 355-nm optical excitation are found to be /spl sim/388 nm and less than 0.6 nm, respectively. Our experiment has shown that the proper control of light confinement inside the random cavities leads to coherent random lasing.     

Measurement of gain saturation coefficient of a DFB laser forlasing mode control by orthogonal polarization light

The frequency response of a 1.55-μm distributed feedback (DFB) laser is measured by injecting light which has an orthogonal polarization to the laser's lasing mode. The injected light, termed as orthogonal polarization light, is carefully selected to not couple to the lasing mode by adjusting its polarization to be orthogonal to that of the lasing mode and by setting its wavelength slightly different from that of the lasing mode. The wavelength of the orthogonal polarization light, however, is set within the range where the laser's active layer has a gain. The gain saturation coefficients for the lasing light are estimated to be 4.7×10^-23 cm² and that by the injected orthogonal polarization light (almost the same wavelength as the lasing mode) are 3.7×10^-23 cm², respectively     

Measuring the optical properties of a trapped ZnO tetrapod

We report the onset of lasing from an electrodynamically trapped ZnO tetrapod. Each of the four legs of such an isolated tetrapod behaves as a single nanowire, where light is guided along the length of the wire and the necessary resonant feedback for lasing is provided at the two end facets. A diluted solution of ZnO tetrapods in methanol was sprayed in the form of a charged mist into a chamber containing the electrodynamic endcap trap. The quick evaporation of methanol assisted in trapping a single charged ZnO tetrapod. The trapped tetrapod is optically pumped with pulses from a Q-switched laser at a wavelength of 355 nm and emits light at 390 nm. For increasing pump fluences above 15 mJ/cm², a superlinear increase in intensity and a narrowing in the spectral width of the photoluminescence were observed, indicating lasing.     

Tunable Near‐Infrared Organic Nanowire Nanolasers

Organic semiconductor nanowires have inherent advantages, such as amenability to low‐cost, low‐temperature processing, and inherent four‐level energy systems, which will significantly contribute to the organic solid‐state lasers (OSSLs) and miniaturized laser devices. However, the realization of near‐infrared (NIR) organic nanowire lasers is always a big challenge due to the difficultly in fabrication of organic nanowires with diameters of ≈100 nm and material issues such as low photoluminescence quantum efficiency in the red‐NIR region. What is more, the achievement of wavelength‐tunable OSSLs has also encountered enormous challenge. This study first demonstrates the 720 nm NIR lasing with a low lasing threshold of ≈1.4 µJ cm^?2 from the organic single‐crystalline nanowires, which are self‐assembled from small organic molecules of (E )‐3‐(4‐(dimethylamino)‐2‐methoxyphenyl)‐1‐(1‐hydroxynaphthalen‐2‐yl)prop‐2‐en‐1‐one through a facile solution‐phase growth method. Notably, these individual nanowires' Fabry–Pérot cavity can alternatively provide the red‐NIR lasing action at 660 or 720 nm from the 0–1 or 0–2 radiative transition channels, and the single (660 or 720 nm)/dual‐wavelength (660 and 720 nm) laser action can be achieved by modulating the length of these organic nanowires due to the intrinsic self‐absorption. These easily‐fabricated organic nanowires are natural laser sources, which offer considerable promise for coherent light devices integrated on the optics microchip.     

Characterization of radiative and nonradiative Processes in Nd:YAG lasers by comparing direct and band pumping

Heat generation and laser performance of Nd:YAG oscillators pumped in two regimes, band pumping at /spl sim/808 nm and "thermally boosted" (TB) pumping at 884.5 nm, are compared. The crystal, pumped with a Ti:sapphire laser, lased with slope efficiencies of 52% and 57% when pumped at 802 and 884.5 nm, respectively. The heat generated during lasing was found to be 27% lower with TB pumping as compared to traditional band pumping. Moreover, the experimental results suggest that the coupling efficiency between the pump band and the upper lasing level (the quantum efficiency) is unity, and about 8% of the upper lasing level population decays via nonradiative channels.     

Highly optimized tunable Er3+-doped single longitudinalmode fiber ring laser, experiment and model

A continuous wave (CW) tunable diode-pumped Er³⁺-doped fiber ring laser, pumped by diode laser at wavelengths around 1480 nm, is discussed. Wavelength tuning range of 42 nm, maximum slope efficiency of 48% and output power of 14.4 mW have been achieved. Single longitudinal mode lasing with a linewidth of 6 kHz has been measured. A fast model of erbium-doped fiber laser was developed and used to optimize output parameters of the laser     

一种新颖的自反馈光注入单频窄线宽光纤激光器

报道一种基于自反馈光注入的单频窄线宽光纤激光器。激光器采用线形腔结构,用高掺杂Er3+光纤作为增益介质,利用输出信号光分束反馈与腔内振荡激光干涉,形成折射率光栅与增益光栅共同作用选择纵模,获得稳定的1 549.85 nm单频窄线宽激光输出。在975 nm单模激光二极管(LD)抽运下,激光器的抽运阈值光功率为13 mW。当抽运光功率为112 mW时,最大输出信号光功率为30.6 mW,对应的光-光转换效率为27.3%,斜率效率为30.2%,信噪比大于50 dB。采用延时自外差方法测量线宽,当使用30 km单模光纤延迟线时,测量得到激光器的3 dB线宽为4.0 kHz。     

单一偏振的多波长环形腔掺镱光纤激光器

在环形腔掺镱光纤激光器中加入一段G .6 5 2光纤作为多模光纤 ,依靠其中导模的空间模式跳变构成动态梳状滤波器 ,于室温下实现了掺镱光纤激光器 1 0 3μm波长附近稳定的 6波长激光同时输出。激光线宽为 0 15nm ,边模抑制比达到 4 0dB以上。通过调整腔内的偏振控制器 ,可以得到不同波长个数和波长间隔的多波长激光输出     

Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser

We report on the lasing characteristics of InAs/InP(100) quantum dots laser through changing the temperature under continuous-wave mode. Three lasing peaks are simultaneously observed at temperature of 80 K and the lasing order of each peak is unrelated with each other when injection current increases. Laser spectra obtained under fixed current for different temperatures show a drastic influence on their shape. A large spectral broadening is observed at low temperature, while the width of lasing spectra gradually narrows when the operating temperature increased. The lasing process of quantum dot laser is obviously different from that of a reference quantum well laser in the same wavelength region. In addition, very high wavelength stability of 0.088 nm/K in the temperature range of 80–300 K is obtained, which is 6.2 times better than that of reference quantum well laser.     

Micromirror device controlled tunable diode laser diode laser

An electronically controlled external cavity laser diode for fast wavelength tuning and multiple-colour lasing is presented. The spectral-tuning is accomplished by a digital micromirror device. Tuning of 47.4 nm with a tuning speed of 0.85 nm/ms was achieved. Simultaneous emission of up to 9 laser lines is demonstrated     

Detuning adjustable multiwavelength MQW-DFB laser array grown byeffective index/quantum energy control selective area MOVPE

A multiwavelength MQW DFB laser array with novel structure Is described. Oscillation wavelength and gain peak wavelength were simultaneously controlled on the same epitaxial wafer by using modulated grown thicknesses of selectively grown InGaAs/InGaAsP/InP MQW active waveguides. The laser array with constant-pitch built-in corrugation fabricated by a simple DFB laser process demonstrated 10.1 nm controllable range for lasing wavelength and 45 nm for gain peak wavelengths, with uniform lasing properties and narrow spectral linewidths. The technique is attractive for light sources used in WDM/FDM applications     

低功率激光二极管抽运的室温运转Yb:YAG激光器

报道了低功率激光二极管(LD)抽运的1030nm Yb:YAG全固态激光器。由于Yb:YAG为准三能级结构,自吸收损耗大,振荡阈值高,因此采用双路偏振耦合系统增加注入功率密度,并通过降低晶体掺杂浓度,选取合适晶体厚度,用半导体制冷器(TEC)有效制冷,在线性腔中实现了1030nm波长稳定输出。Yb:YAG晶体Yb离子掺杂原子数分数为8%,几何尺寸为11mm×0.7mm,晶体面对输出镜一端镀940nm高反膜,使未被吸收的抽运光反射回去,再次抽运晶体,从而提高了抽运光的利用效率,当注入功率为2W时,1030nm输出功率为192.8mW,光-光转换效率为9.6%,2h内稳定度小于3.5%。     

毛细管放电抽运软X光激光产生条件的实验研究

实验探索了较低氩气气压下激光产生的条件。利用X射线二极管（XRD）测量了毛细管放电激励类氖氩46．9nm软X光激光的输出。在其他实验参量不变的情况下，改变主脉冲电流的波形，比较了激光尖峰与背景光的相对位置。实验结果表明，当氩气气压为23Pa时，激光产生时间相对于不同的电流上升沿是一个在小范围内基本稳定的值，约为40ns左右；激光尖峰产生于背景光的峰值附近，表明激光尖峰是产生在等离子体被压缩到轴心后的停滞阶段。实验结果证实了只有当等离子体的电子温度、电子密度同时在最佳范围时才能产生软X光激光，并且主脉冲电流对等离子体压缩加热到合适产生激光的电子温度需要一个相对同定的时间；这个时间与主脉冲电流前沿的快慢无关。