A chlorinated copolymer donor demonstrates a 18.13% power conversion efficiency

The rapid development of low-bandgap(LBG)nonfullerene acceptors and wide-bandgap(WBG)copolymer donors in recent years has boosted the power conversion efficiency(PCE)of organic solar cells(OSCs)to the 18%level[1?21].The commercialization of OSCs is highly expected.However,critical issues like the cost and the stability also determine whether OSCs can enter the market or not[22].     

Side chain effect on photovoltaic properties of D–A copolymers based on benzodithiophene and thiophene-substituted bithiazole

Two donor–acceptor (D−A) copolymers, PEHBDT-BTz and PODBDT-BTz, containing the same backbone of benzodithiophene (BDT) and bithiazole (BTz) units but different side chains were designed and synthesized. Effects of the side chains of BDT and BTz units on solubility, absorption spectra, energy levels, film morphology, and photovoltaic properties of the polymers were investigated. Results showed that the more branched side chains could increase the molecular weight and the introduction of alkylthienyl groups into BTz unit benefits to broaden the absorption and lower the bandgaps as well as deepen HOMO levels, which are propitious to improve the short-circuit current density (J_sc) and open-circuit voltage (V_oc) of photovoltaic cells. Polymer solar cells (PSCs) were prepared with the polymers as electron donors and PCBM as an acceptor. The device fabrication conditions, including the additive, the different acceptor and blend ratio of the polymer donor and acceptor, have been optimized. PCE of PSCs based on the copolymers varied from 2.92% for PODBDT-BTz to 3.71% for PEHBDT-BTz, depending on the type and topology of the side chains on the BDT moiety. The results indicate that an appropriate choice of side chains on the backbone is an effective way to improve photovoltaic performance of the related PSCs.     

Side chain effect on photovoltaic properties of dibenzo[a,c]phenazine based donor–acceptor polymers

The electron–donor polymers containing dibenzo[a,c]phenazine (BPz) derivatives with 2,7-alkyl and 11,12-alkoxy substituted, PBDT-BPzC and PBDT-OBPz, respectively, were synthesized to investigate the photovoltaic effect of different side chain substitutions. The polymers exhibit similar physical properties, except the HOMO and LUMO of PBDT-BPzC are 0.18 and 0.15 eV deeper than PBDT-OBPz, resulting in the V_oc of polymer solar cells (PSCs) based on PBDT-BPzC are above 0.1 V higher than that of PBDT-OBPz. With the contribution of the superior V_oc, polymer PBDT-BPzC showed preferable photovoltaic performances, and the PCE reached 4.44%, which is 0.49% higher than PBDT-OBPz. This research reveals a preferred side chain substituted way to modify BPz unit, and gives an optimally developing the dibenzo[a,c]phenazine derivatives based electron–donor polymers.     

Improved power conversion efficiency by insertion of RGO–TiO2 composite layer as optical spacer in polymer bulk heterojunction solar cells

We report that the power conversion efficiency (PCE) can be enhanced in polymer bulk heterojunction solar cells by inserting an interfacial electron transporting layer consisting of pristine TiO₂ or reduced graphene oxide–TiO₂ (RGO–TiO₂) between the active layer and cathode Al electrode. The enhancement in the PCE has been analyzed through the optical absorption, current–voltage characteristics under illumination and estimation of photo-induced charge carrier generation rate. It was found that either TiO₂ or RGO–TiO₂ interfacial layers improve the light harvesting, as well as the charge extraction efficiency, acting as a blocking layer for holes, and also reducing charge recombination. The combined enhancement in light harvesting property and charge collection efficiency improves the PCE of the organic solar cell up to 4.18% and 5.33% for TiO₂ and RGO–TiO₂ interfacial layer, respectively, as compared to a value of 3.26% for the polymer solar cell without interfacial layer.     

Collaborative R&D between multicrystalline silicon ingots and battery efficiency improvement—effect of shadow area in multicrystalline silicon ingots on cell efficiency

We characterized strip-like shadows in cast multicrystalline silicon (mc-Si) ingots. Blocks and wafers were analyzed using scanning infrared microscopy, photoluminescence spectroscopy, laser scanning confocal microscopy, field-emission scanning electron microscopy, X-ray energy-dispersive spectrometry, and microwave photoconductivity decay technique. The effect on solar cell performance is discussed. The results show that the non-microcrystalline shadow region in Si ingots consists of precipitates of Fe, O, and C. The size of these Fe–O–C precipitates found at the shadow region is ~25 μm. Fe–O–C impurities can slightly reduce the minority carrier lifetime of the wafers while severely decrease in shunt resistance, leading to the increase in reverse current of the solar cells and degradation in cell efficiency.     

Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells

The effect of the [Ga]/[In+Ga] ratio of gallium and indium on the microwave photoconductivity of Cu–In–Ga–Se (CIGSe) films and on the efficiency of solar cells fabricated in accordance with the same technology is investigated. According to the observations of a field-emission scanning electron microscopy (FESEM), the grain size decreases with increasing Ga content. With increasing gallium content in the samples, the photogenerated-electron lifetime and the activation energy of the microwave photoconductivity also decrease. The changes in the activation energy of the through conduction in darkness are less than 20%. Analysis of the obtained data shows that the known effect of the gallium gradient on the efficiency should be associated with modification of the internal structure of grains instead of with their boundaries.     

Study of mechanical stress impact on the I–V characteristics of a power VDMOS device using 2D FEM simulations

Reliability is a major economic and technical challenge for power electronics dedicated to embedded applications (avionics, automotive, hybrid vehicles, etc.). As the damage in a power assembly is essentially due to thermo-mechanical stress resulting from temperature variations (ambient and junction) [1], industrial actors ask for integrated devices allowing anticipation of the failure by monitoring temperature and mechanical stress. Power devices I(V) characteristics depend on the mechanical stress. Hence, one can make use of this dependence to assess the mechanical stress values from the electrical characteristics of the device. The extracted mechanical stress values give information on the mechanical state of the power module that one could exploit to anticipate failure. To study the impact of the mechanical stress on the I(V) characteristics, we carry out mechanical simulations using a finite element method (FEM) simulator (COMSOL) for a simple 2D power assembly to calculate the mechanical stress at different temperatures as well as the mechanical stress due to an external strain. The calculated values are then fed into a FEM physical device simulator (Sentaurus TCAD) to determine the electrical characteristics of a VDMOS device at different temperatures. A dissociation of mechanical stress and thermal effects on the VDMOS I(V) characteristics would make it possible to have a graphical representation that could be used to have a quick estimate of the mechanical state of the power VDMOS through its electrical characteristics.     

Design and verification of a 10-bit 1.2-V 100-MSPS D/A IP core based on a 0.13-μm low power CMOS process

Based on a low supply voltage curvature-compensated bandgap reference and central symmetry Q~2 random walk NMOS current source layout routing method,a 1.2-V 10-bit 100-MSPS CMOS current-steering digital-to-analog converter is implemented in a SMIC 0.13-μm CMOS process.The total consumption is only 10 mW from a single 1.2-V power supply,and the integral and differential nonlinearity are measured to be less than 1 LSB and 0.5 LSB, respectively.When the output signal frequency is 1-5 MHz at 100-MSPS samplin...