共查询到19条相似文献,搜索用时 234 毫秒
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我们利用分子束外延(MBE)方法研制出了高质量的InGaAs/GaAs/AIGaAs应变量子阱激光器外延材料,其最低的阈值电流密度可达到140A/cm2,激发波长在980urn左右.通过脊型波导结构的制备,获得了高性能的适合于掺铒光纤放大器用的980urn量子阱激光器泵浦源,其典型的阈值电流和外微分量子效率分别为15mA和0.8mW/mA,基横模的输出功率大于80mW,器件在50℃,80mw的恒功率老化实验表明,器件具有较好的可靠性.通过与掺铒光纤的耦合,其组合件出纤功率可达60mW以上. 相似文献
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采用分子束外延(MBE)技术,研制生长了InGaAs/GaAs应变单量子阱激光器材料,并研究了生长温度及界面停顿生长对激光器性能的影响。结果表明,较高的InGaAs生长温度和尽可能短的生长停顿时间,将有利于降低激光器的阈值电流。所外延的激光器材料在250μm×500μm宽接触、脉冲工作方式下测量的阈电流密度的典型值为160mA/cm2。用湿法腐蚀制作的4μm条宽的脊型波导激光器,阈值电流为16nA,外微分量子效率为04mW/mA,激射波长为976±2nm,线性输出功率为100mW。 相似文献
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采用VarianGenⅡMBE生长系统研究了InGaAs/GaAs应变层单量子阶(SSQW)激光器结构材料。通过MBE生长实验,探索了In_xGa_(1-x)tAs/GaAsSSQW激光器发射波长(λ)与In组分(x)和阱宽(L_z)的关系,并与理论计算作了比较,两者符合得很好。还研究了材料生长参数对器件性能的影响,主要包括:Ⅴ/Ⅲ束流比,量子阱结构的生长温度T_g(QW),生长速率和掺杂浓度对激光器波长、阈值电流密度、微分量子效率和器件串联电阻的影响。以此为基础,通过优化器件结构和MBE生长条件,获得了性能优异的In_(0.2)Ga_(0.8)As/GaAs应变层单量子阱激光器:其次长为963nm,阈值电流密度为135A/cm ̄2,微分量子效率为35.1%。 相似文献
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采用分子束外延技术生长了GaAs/AlGaAs单量子阱得多量子阱材料。采用GaAs/AlGaAs超晶格缓冲层掩埋衬底缺陷,获得的量子阱结构材料被成功地用于制作量子阱激光器。波长为778nm的激光器,最低阈值电流为30mA,室温下线性光功率大于20mW。 相似文献
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用LPE研制的室温连续工作的1.48μm单量子阱激光器 总被引:1,自引:0,他引:1
利用液相外延(LPE)技术研制出室温连续工作的InGaAsP/InP分别限制单量子阶(SCH-SQW)双沟平面掩埋(DC-PBH)激光器。室温下,腔面未镀膜的激光器最低阈值电流为23mA(激光器腔长为200μm,CW,13℃)。激射波长为1.48μm,最高输出功率达18.8mW(L=200μm.CW,18℃)。脉冲输出峰值功率大于50mW(脉冲宽度1μs、频率1kHz),未见功率饱和。量子阱的阱宽为20nm[1]. 相似文献
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利用分子束外延技术研制出了高质量InGsAs/GaAs应变量子阱材料及量子阱激光器.脊形波导窄条形量子阱激光器的阈值电流和微分量子效率分别为15mA和0.8 W/A,线性输出功率大于150mW,基横模输出功率可达100mW.InGaAs应变量子阱激光器和单模光纤进行了耦合,其组合件出纤光功率典型值为40mW,最大值可达60mW.显示出了高的基横模输出功率和高的耦合效率.其组合件在40~60mW下,中心发射波长在977nm.满足了对掺铒光纤高效率泵浦的波长要求,成功地研制出适于掺铒光纤放大器用的应变量子阱激光器. 相似文献
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A maximum output power of 115 mW and a slope efficiency of 0.92 W/A have been achieved in 0.98-μm InGaAs strained quantum well lasers with a 3-μm-wide ridge waveguide structure for efficient fiber coupling. Stable operation of over 5000 h under 50°C constant power operation with an optical power density of 3.9 MW/cm2 has been demonstrated with a degradation rate as low as 5×10-6 per hour. These results show that this device is promising as a practical pumping source for Er3+-doped fiber optical amplifiers 相似文献
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Larsson A. Forouhar S. Cody J. Lang R.J. Andrekson P.A. 《Photonics Technology Letters, IEEE》1990,2(8):540-542
The authors have fabricated ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs GRIN-SCH SQW (graded-index separate-confinement-heterostructure single-quantum-well) lasers, emitting at 980 nm, with a maximum output power of 240 mW from one facet and a 22% coupling efficiency into as 1.55-μm single-mode optical fiber. These lasers satisfy the requirements on efficient and compact pump sources for Er3+-doped fiber amplifiers 相似文献
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Chen Y.K. Wu M.C. Hong M.H. Mannaerts J. Chin M.A. Sergent A.M. 《Electron Devices, IEEE Transactions on》1991,38(12):2692-2693
Summary form only given. An edge-emitting strained AlGaAs/InGaAs/GaAs quantum-well laser structure is reported. It has a periodic index separate confinement heterostructure (PINSCH) optical confinement layers for a small beam divergence and high output power. Preliminary measurements of AR/HR-coated self-aligned ridge waveguide lasers show a CW output power of up to 350 mW and a 20° transverse beam divergence at a 980-nm lasing wavelength. This low beam divergence results in a high coupling efficiency of 51% into single-mode fibers. The expanded optical field in PINSCH confinement layers significantly pinches the transverse beam divergence and increases the maximum output power 相似文献
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Wu M.C. Chen Y.K. Kuo J.M. Chin M.A. Sergent A.M. 《Photonics Technology Letters, IEEE》1992,4(7):676-679
The authors report the high-temperature and high-power operation of strained-layer InGaAs/GaAs quantum well lasers with lattice-matched InGaP cladding layers grown by gas-source molecular beam epitaxy. Self-aligned ridge waveguide lasers of 3-μm width were fabricated. These lasers have low threshold currents (7 mA for 250-μm-long cavity and 12 mA for 500-μm-long cavity), high external quantum efficiencies (0.9 mW/mA), and high peak powers (160 mW for 3-μm-wide lasers and 285 mW for 5-μm-wide laser) at room temperature under continuous wave (CW) conditions. The CW operating temperature of 185°C is the highest ever reported for InGaAs/GaAs/InGaP quantum well lasers, and is comparable to the best result (200°C) reported for InGaAs/GaAs/AlGaAs lasers 相似文献
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本文描述一种由MOCVD生长的GaAs/GaAlAs 分别限制单量子阱片子制作的锁相列阵大功率激光器.由十个单横模器件耦合而成的列阵器件,其阈值电流为67mA,线性输出功率大于500mW,微分量子效率达60%.列阵器件由强耦合区和弱耦合区构成,考察了强耦合区的几何结构对耦合模即输出远场分布的影响. 相似文献