一种12位25 MS/s采样保持电路设计

在流水线结构的A／D转换电路中,采样保持电路是整个电路的核心模块。同时采样保持电路通常是整个电路中功耗最大的模块,其性能直接决定了整个A／D转换器的性能。文章介绍了一种12位25MS／s采样保持电路。该采样保持电路采用SMIC0.25μm标准数字CMOS工艺进行设计。基于BSIM3V3Spice模型,采用Hspice对整个电路进行仿真。仿真的结果表明,电路在工作于25MS／s、输入信号频率为2．56MHz时,输出信号的SFDR为75．6dB,而整个电路的功耗仅为10．41mW。     

一种用于12位250MSPS流水线ADC的中频采样前端

设计了一种具有中频采样功能的流水线ADC采样保持前端电路.采样保持前端电路采用基于开关电容的底板采样翻转式结构,运算放大器采用了米勒补偿型两级结构以提高信号摆幅,采样开关采用了消除衬底偏置效应的自举开关以提高中频采样特性.该采样保持前端电路被运用于一种12位250 MSPS流水线ADC,电路采用0.18μm lP5M 1.8 V CMOS工艺实现,测试结果表明该ADC电路在全速采样条件下对于20 MHz的输入信号得到的SNR为69.92 dB,SFDR为81.17 dB,-3 dB带宽达700 MHz以上,整个前端电路的功耗为58 mW.     

时间交织流水线ADC的双采样保持电路设计

基于SMIC0.18μm,1.8V工艺,设计了一种新型的双采样保持电路,可用于12bit、100MHz采样频率的时间交织流水线(Pipelined)ADC中.设计了一种采用了增益增强技术并带有一种改进的开关电容共模反馈电路的全差分运放.并且针对该双采样保持电路设计了特定的时钟发生电路.在cadence电路设计平台中利用Spectre仿真,结果表明:该采样保持电路可以实现12位、100MS/s采样速率和15mW功耗,满足系统设计要求.     

一种高性能CMOS采样/保持电路

介绍了一种高性能CMOS采样/保持电路.该电路在3 V电源电压下,60 MHz采样频率时,输入直到奈奎斯特频率仍能够达到90 dB的最大信号谐波比(SFDR)和80 dB的信噪比(SNR).电路采用全差分结构、底板采样、开关栅电压自举(bootstrap)和高性能的增益自举运算放大器.采用0.18 μm CMOS工艺库,对电路进行了Hspice仿真验证.结果表明,整个电路消耗静态电流5.8 mA.     

一种高速高精度采样/保持电路

介绍了一种用于12bit,100MS/s流水线模数转换器前端的采样/保持电路的设计.该电路在3V电源电压100MHz采样频率时,输入直到奈奎斯特频率仍能够达到108dB的无杂散动态范围(SFDR)和77dB的信躁比(SNR).论文建立了考虑开关之后的采样保持电路的分析模型,并详细研究了电路中开关组合对电路性能的影响,同时发现了传统的栅源自举开关(bootstrapped switch)中存在的漏电现象并对其进行了改进,极大地减小了漏电并提高了电路的线性性能.     

一种高速高精度采样/保持电路

介绍了一种用于12bit,100MS/s流水线模数转换器前端的采样/保持电路的设计.该电路在3V电源电压100MHz采样频率时,输入直到奈奎斯特频率仍能够达到108dB的无杂散动态范围(SFDR)和77dB的信躁比(SNR).论文建立了考虑开关之后的采样保持电路的分析模型,并详细研究了电路中开关组合对电路性能的影响,同时发现了传统的栅源自举开关(bootstrapped switch)中存在的漏电现象并对其进行了改进,极大地减小了漏电并提高了电路的线性性能.     

12位100MS/s ADC中采样/保持电路的分析与设计

设计了一种高性能的采样保持(S/H)电路,在1.8V的电源电压下,其性能满足12位精度、100MS/s转换速率的ADC的要求。设计中采用了一种新型的自举采样开关,提高了S/H电路的可靠性和线性度;对于高增益大带宽的运算跨导放大器OTA的带宽设计,在分析了主运放和辅助运放在带宽和相位裕度等方面的关系的基础上,提出了新的设计方法。仿真结果表明:S/H电路的差动输出摆幅达到了2V;对于输入为49MHz的正弦波,测得其信号噪声失真比达到了82dB,满足12位ADC的要求;整个电路的功耗约为20mW。     

高性能CMOS采样保持电路的设计

设计了一种基于0.5μm CMOS工艺的高线性、高精度、高速的采样/保持电路.采用一种仅由4个PMOS管、一个电容和一个NMOS开关构成的新型双边信号采样开关,有效地提高了双边信号采样电路的线性度并减小了电路的噪声和失调.仿真结果表明:输入摆幅为1V的156kHz的双边信号,在IOMS/s的采样速率下,其无杂散动态范围(SFDR)为120dB.     

14位50MS/s100mW0.18μm CMOS流水线ADC

实现了一种14位40MS/s CMOS流水线A/D转换器(ADC)。在1.8V电源电压下,该ADC功耗仅为100mW。基于无采样/保持放大器前端电路和双转换MDAC技术,实现了低功耗设计,其中,无采样/保持放大器前端电路能降低约50%的功耗,双转换MDAC能降低约10%的功耗。该ADC采用0.18μm CMOS工艺制作,芯片尺寸为2.5mm×1.1mm。在40MS/s采样速率、10MHz模拟输入信号下进行测试,电源电压为1.8V,DNL在±0.8LSB以内,INL在±3.5LSB以内,SNR为73.5dB,SINAD为73.3dB,SFDR为89.5dBc,ENOB为11.9位,THD为-90.9dBc。该ADC能够有效降低SOC系统、无线通信系统及数字化雷达的功耗。     

基于InP HBT的5 GS/s采样保持电路设计

基于0.7μm、ft=280 GHz的InP HBT工艺设计了一种双开关宽带超高速采样保持电路。芯片面积1.5 mm×1.8 mm,总功耗小于2.1 W。仿真结果表明,电路可以在5 GS/s采样速率下正常工作。当采样速率分别为5 GS/s和1 GS/s时,在输入信号功率为4 d Bm的情况下,采样带宽分别为16 GHz和20 GHz;在输入信号功率为4 d Bm且其频率小于5 GHz的情况下,电路的SFDR分别不低于43 d Bc和50 d Bc。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks