All-Optical Vestigial Sideband Generation Using a Semiconductor Optical Amplifier

An all-optical setup to generate vestigial sideband signals based on self-phase modulation in a semiconductor optical amplifier is experimentally demonstrated at 10 Gb/s. Sideband suppressions higher than 15 dB are reported with improved eye opening. Wavelength-independent operation over 26 nm is demonstrated. Increased chromatic dispersion tolerance is verified: a receiver sensitivity penalty of 5.3 dB, relative to back-to-back, is obtained after transmission over 2720 ps/nm; whereas conventional double sideband is penalized by 4.0 dB after 1360 ps/nm     

半导体光放大器

详细介绍了半导体光放大器的结构和制造技术。重点介绍了点尺寸变换器和矩阵光开关模块。     

Reduced Recovery Time Semiconductor Optical Amplifier Using p-Type-Doped Multiple Quantum Wells

The effect of p-type doping of the active region of multiple quantum-well (MQW) semiconductor optical amplifiers (SOAs) has been studied. Spectrogram measurements of the dynamics of the SOAs reveal that using p-doped barriers for the MQWs has significantly reduced both gain and phase recovery times. 1/e phase recovery times as short as 11 ps were demonstrated using this approach     

有效的SOA分段模型及其在光信号处理中的应用

阐述了半导体光放大器(SOA)的分段模型理论;列举了三种SOA分段模型,并分别用这几种模型对基于交叉增益调制效应的光波长转换进行了仿真计算.通过比较和分析不同模型的仿真结果与实验现象的差异,说明在基于SOA的全光信号处理过程中,有源区内的放大自发辐射(ASE)对光信号的增益压缩与光脉冲的形态具有不可忽视的作用.     

Error-Free 320-Gb/s All-Optical Wavelength Conversion Using a Single Semiconductor Optical Amplifier

We demonstrate error-free wavelength conversion at 320 Gb/s by employing a semiconductor optical amplifier that fully recovers in 56 ps. Error-free operation is achieved without using forward error correction technology. We employ optical filtering to select the blue sideband of the spectrum of the probe light, to utilize fast chirp dynamics introduced by the amplifier, and to overcome the slow gain recovery. This leads to an effective recovery time of less than 1.8 ps for the wavelength converter. The wavelength converter has a simple configuration and is implemented by using fiber-pigtailed components. The concept allows photonic integration     

Wide-Band Steady-State Numerical Model and Parameter Extraction of a Tensile-Strained Bulk Semiconductor Optical Amplifier

A wide-band steady-state model of a tensile-strained bulk InGaAsP semiconductor optical amplifier is described. An efficient numerical algorithm of the steady-state model and a parameter extraction algorithm based on the Levenberg-Marquardt method are described. The parameter extraction technique is used to determine the material Auger recombination coefficient, effective intraband lifetime, the average strain and molar fraction of Arsenic in the active region. Simulations and comparisons with experiment are given which demonstrate the accuracy and versatility of the model     

Millimeter-Wave Signal Generation Using Two Cascaded Optical Modulators and FWM Effect in Semiconductor Optical Amplifier

A novel method of optical generation millimeter-wave (mm-wave) signals employing two cascaded optical modulators and four-wave-mixing effect in semiconductor optical amplifiers is proposed. This approach is capable of generating signals of four times, eight times, and 12 times microwave source frequency with high spectral purity and stability. A mm-wave of 42 GHz (12times fundamental) with a 3-dB linewidth less than 30 Hz and a phase noise less than 83 dBc/Hz at 10-kHz offset is obtained.     

低偏振灵敏度半导体光放大器

报道了基于混合应变量子阱材料的半导体光放大器 (SOA)。利用张应变量子阱加强了TM模的增益 ,使之接近TE模的增益 ,从而使SOA的偏振灵敏度大为降低。在 150mA的偏置下 ,获得了 2 4dB的小信号增益和 1dB的偏振灵敏度。     

基于半导体光放大器的可调谐激光器

采用半导体光放大器设计实现了可调谐频域锁模激光器,可得到调谐范围宽、稳定性高的激光输出,基于半导体光放大器的可调谐激光器可用于光纤光栅传感系统,提高系统信噪比和解调精度,增强复用能力,改善系统性能.     

用于光纤传输系统的半导体激光放大器

本文主要介绍用于光纤传输系统的行波半导体激光放大器(TWSLA)。首先描述 TWSLA 的激光器刻面抗反射(AR)涂层的特性,然后描述半导体激光放大器(SLA)的重要特性,如小信号增益、信号增益饱和及噪声特性,最后讨论了 TWSLA 的结构设计。     

增益饱和半导体激光放大器中的自相位调制效应

本文分析了半导体激光放大器处于增益饱和状态下的自相位调制（SPM）效应,以及SPM效应对传输脉冲波形、相位及频谱的影响。指出了利用这种效应可以补偿传输光纤色散。但是,必须仔细选择传输系统的配置和放大器结构参数,以获得最佳色散补偿效果。     

采用半导体光放大器的多波长光纤环形激光器

报道了一种插入马赫-曾德尔(M-Z)光纤干涉仪的半导体光放大器(SOA)多波长光纤环形激光器,实现了信道间隔为100 GHz的稳定的多波长连续光激射,其输出光谱3 dB带宽为19.5 nm,消光比大于30 dB.其中在17.9 nm范围内获得了22个波长的连续光,功率不平坦度为1.2 dB,总输出功率为5.1 dBm.对该结构的多波长激光器输出光谱宽,不同波长间功率波动小的特性进行了分析,提出在较低环腔损耗下,半导体光放大器的增益饱和及四波混频(FWM)效应的共同作用使环腔内多波长光功率获得自动均衡;并对实验观测到的激光器输出光谱带宽及中心波长随半导体光放大器驱动电流降低或环腔损耗增大而减小的现象进行了讨论.     

半导体光放大器在通信系统中的应用

介绍半导体光放大器的基本结构及其特性，重点介绍在通信领域，特别是在近距离通信领域的广泛应用。     

利用单个半导体光放大器实现非反转归零码的可重构全光逻辑门

提出了一种新型非反转归零(RZ)码的可重构全光逻辑门方案.该方案基于单个半导体光放大器(SOA)和可调谐光带通滤波器(TOBPF).利用SOA的四波混频效应和交叉增益调别(XGM)效应,实现了RZ码信号的多种功能逻辑运算.在不改变实验装置的情况下,通过调节带通滤波器中心波长和信号光功率,可以在不同逻辑功能之间进行切换.实验实现了10 Gb/s全光信号间的"与","非","或非","同或","(A)·B","A·(B)"等基本逻辑运算.与用连续光作为探测光不同的是,本方案采用了时钟信号作为探测光,这样各个逻辑门的输出均为非反转RZ码,有利于不同逻辑门的进一步组合.     

An Adjustable Gain-Clamped Semiconductor Optical Amplifier (AGC-SOA)

The operation of a semiconductor optical amplifier (SOA)-ring laser-based subsystem, with the capability to provide adjustable gain-clamped operation, will be described, and preliminary characterization results will be presented. The device uses two SOAs in a ring-cavity topology: one to amplify the signal and the other to control the gain. This type of subsystem finds applications in packet-based dynamic systems where it may be used for power equalization and linear amplification.     

Millimeter-Wave Frequency Tripling Based on Four-Wave Mixing in a Semiconductor Optical Amplifier

An approach to generating a frequency-tripled millimeter-wave (mm-wave) signal based on four-wave mixing (FWM) in a semiconductor optical amplifier (SOA) is experimentally demonstrated. In the proposed system, two phase-correlated optical wavelengths generated by an optical phase-locked loop (OPLL) are used as two pumps to generate the FWM process in the SOA. Two idlers with a wavelength spacing three times that of the two pump wavelengths are obtained. The two pump wavelengths are then removed by two cascaded fiber Bragg gratings serving as an optical notch filter. By beating the two idlers at a photodetector, an mm-wave with a frequency that is three times that of the OPLL reference source is generated     

低偏振灵敏度行波半导体光放大器的实验研究

本文报导了一种具有低偏振灵敏度的行波半导体光放大器。通过有效地设计放大器的端面增透膜系，使得端面残余反射率低于１０－４，从而获得低于２ｄＢ的偏振灵敏度。     

1.3μm高增益偏振无关应变量子阱半导体光放大器

采用低压金属有机化学气相外延法 (LP MOVPE)生长并制作了 1 3μm脊型波导结构偏振无关半导体光放大器 (SOA) ,有源区为基于四个压应变量子阱和三个张应变量子阱交替生长的混合应变量子阱 (4C3T)结构 ,压应变阱宽为 6nm ,应变量 1 0 % ,张应变阱宽为 11nm ,应变量 - 0 95 % ;器件制作成 7°斜腔结构以有效抑制腔面反射。半导体光放大器腔面蒸镀Ti3 O5/Al2 O3 减反 (AR)膜以进一步降低腔面剩余反射率至 3× 10 -4以下 ;在 2 0 0mA驱动电流下 ,光放大器放大的自发辐射 (ASE)谱的 3dB带宽大于 5 0nm ,光谱波动小于 0 4dB ,半导体光放大器管芯的小信号增益近 30dB ,在 12 80～ 1340nm波长范围内偏振灵敏度小于 0 6dB ,饱和输出功率大于 10dBm ,噪声指数 (NF)为 7 5dB。     

Large-Signal Operation of a Semiconductor Optical Amplifier as a Phase-Shifting Element for Microwave Signals

We investigate the modulation index dependence of the phase shift experienced by a sinusoidal microwave signal carried by an optical carrier and propagating through a semiconductor optical amplifier. We show that for large modulation depths, simple small-signal nonlinear models fail to predict the measured phase shift and we present a large-signal model that fits the experiments well.      

A Tunable Multiwavelength Laser Employing a Semiconductor Optical Amplifier and an Opto-VLSI Processor

We propose and experimentally demonstrate a stable tunable multiwavelength laser employing a semiconductor optical amplifier (SOA) in conjunction with an opto-very-large-scale-integration (VLSI) processor. By uploading digital phase holograms onto the opto-VLSI processor, the amplified spontaneous emission of the SOA is arbitrarily sliced and injected back into the SOA to generate multiple lasing wavelengths with a linewidth of 0.5 nm. Experimental results demonstrate a tunable multiwavelength laser with a tuning range from 1528 to 1533 nm with power fluctuations of less than 0.5 dB.