Insights into Fullerene Passivation of SnO2 Electron Transport Layers in Perovskite Solar Cells

Interfaces between the photoactive and charge transport layers are crucial for the performance of perovskite solar cells. Surface passivation of SnO₂ as electron transport layer (ETL) by fullerene derivatives is known to improve the performance of n–i–p devices, yet organic passivation layers are susceptible to removal during perovskite deposition. Understanding the nature of the passivation is important for further optimization of SnO₂ ETLs. X‐ray photoelectron spectroscopy depth profiling is a convenient tool to monitor the fullerene concentration in passivation layers at a SnO₂ interface. Through a comparative study using [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM) and [6,6]‐phenyl‐C₆₁‐butyric acid (PCBA) passivation layers, a direct correlation is established between the formation of interfacial chemical bonds and the retention of passivating fullerene molecules at the SnO₂ interface that effectively reduces the number of defects and enhances electron mobility. Devices with only a PCBA‐monolayer‐passivated SnO₂ ETL exhibit significantly improved performance and reproducibility, achieving an efficiency of 18.8%. Investigating thick and solvent‐resistant C₆₀ and PCBM‐dimer layers demonstrates that the charge transport in the ETL is only improved by chemisorption of the fullerene at the SnO₂ surface.     

Distinguishing the Importance of Fullerene Phase Separation from Polymer Ordering in the Performance of Low Band Gap Polymer:Bis‐Fullerene Heterojunctions

One way to improve power conversion efficiency (PCE) of polymer based bulk‐heterojunction (BHJ) photovoltaic cells is to increase the open circuit voltage (V _oc). Replacing PCBM with bis‐adduct fullerenes significantly improves V _oc and the PCE in devices based on the conjugated polymer poly(3‐hexyl thiophene) (P3HT). However, for the most promising low band‐gap polymer (LBP) system, replacing PCBM with ICBA results in poor short‐circuit current (J _sc) and PCE although V _oc is significantly improved. The optimization of the morphology of as‐cast LBP/bis‐fullerene BHJ photovoltaics is attempted by adding a co‐solvent to the polymer/fullerene solution prior to film deposition. Varying the solubility of polymer and fullerene in the co‐solvent, bulk heterojunctions are fabricated with no change of polymer ordering, but with changes in fullerene phase separation. The morphologies of the as‐cast samples are characterized by small angle neutron scattering and neutron reflectometry. A homogenous dispersion of ICBA in LBP is found in the samples where the co‐solvent is selective to the polymer, giving poor device performance. Aggregates of ICBA are formed in samples where the co‐solvent is selective to ICBA. The resultant morphology improves PCE by up to 246%. A quantitative analysis of the neutron data shows that the interfacial area between ICBA aggregates and its surrounding matrix is improved, facilitating charge transport and improving the PCE.     

Regulating Orientational Crystallization and Buried Interface for Efficient Perovskite Solar Cells Enabled by a Multi-Fluorine-Containing Higher Fullerene Derivative

Perovskite films prepared by the solution process usually result in irregular grain orientation and rich buried interface defects, hindering the further improvement of device performance. Herein, multi-fluorine-containing C₆₀- and C₇₀ (higher fullerene)-porphyrin derivatives, F₆₀PD and F₇₀PD, are synthesized and pre-buried to modify the SnO₂/perovskite heterointerface. The F₇₀PD modification layer provides a better perovskite quality and more effective electron transporting capability compared to the corresponding F₆₀PD, with the F₇₀PD being more effective in regulating the perovskite growth, passivating the buried interface defects, and optimizing the interface energy level alignment. Consequently, the F₇₀PD-based device delivers superior efficiency and stability than the control and F₆₀PD-based devices. The F₇₀PD-based device yields a champion efficiency of 24.09% with negligible hysteresis. Meanwhile, due to the increased activation energy of ion migration, the F₇₀PD-based device maintains 80% of its initial efficiency after operating at the maximum power point for 1620 h. This study highlights the potential of designing higher fullerene materials for buried interface to further improve the perovskite solar cells’ performance.     

Suppression of Ionic and Electronic Conductivity by Multilayer Heterojunctions Passivation Toward Sensitive and Stable Perovskite X-Ray Detectors

Organic-inorganic hybrid perovskites are promising candidates for direct X-ray detection and imaging. The relatively high dark current in perovskite single crystals (SCs) is a major limiting factor hindering the pursuit of performance and stability enhancement. In this study, the contribution of dark current is disentangled from electronic (σ_e) and ionic conductivity (σ_i) and shows that the high σ_i dominates the dark current of MAPbBr₃ SCs. A multilayer heterojunctions passivation strategy is developed that suppresses not only the σ_i by two orders of magnitude but also σ_e by a factor of 1.6. The multilayer heterojunctions passivate the halide vacancy defects and increase the electron and hole injection barrier by inducing surface p-type doping of MAPbBr₃. This enables the MAPbBr₃ SC X-ray detectors to obtain a high sensitivity of 19 370 µC Gy_air⁻¹ cm⁻² under a high electric field of 100 V cm⁻¹, a record high sensitivity for bromine self-powered devices, and a low detection limit of 42.3 nGy_air s⁻¹. The unencapsulated detectors demonstrate a stable baseline after storage for 210 days and outstanding operational stability upon irradiation with an accumulated dose of up to 1944 mGy_air.     

Monolithic Perovskite/Silicon Tandems with >28% Efficiency: Role of Silicon-Surface Texture on Perovskite Properties

Textured silicon wafers used in silicon solar cell manufacturing offer superior light trapping, which is a critical enabler for high-performance photovoltaics. A similar optical benefit can be obtained in monolithic perovskite/silicon tandem solar cells, enhancing the current output of the silicon bottom cell. Yet, such complex silicon surfaces may affect the structural and optoelectronic properties of the overlying perovskite films. Here, through extensive characterization based on optical and microstructural spectroscopy, it is found that the main effect of such substrate morphology lies in an altering of the photoluminescence response of the perovskite, which is associated with thickness variations of the perovskite, rather than lattice strain or compositional changes. With this understanding, the design of high-performance perovskite/silicon tandems is rationalized, yielding certified power conversion efficiencies of >28%.     

Using Bulk Heterojunctions and Selective Electron Trapping to Enhance the Responsivity of Perovskite–Graphene Photodetectors

Graphene field effect transistor sensitized by a layer of semiconductor (sensitizer/GFET) is a device structure that is investigated extensively for ultrasensitive photodetection. Among others, organometallic perovskite semiconductor sensitizer has the advantages of long carrier lifetime and solution processable. A further step to improve the responsivity is to design a structure that can promote electron–hole separation and selective carrier trapping in the sensitizer. Here, the use of a hybrid perovskite–organic bulk heterojunction (BHJ) as the light sensitizer to achieve this goal is demonstrated. Our spectroscopy and device measurements show that the CH₃NH₃PbI₃–PCBM BHJ/GFET device has improved charge separation yield and carrier lifetime as compared to a reference device with a CH₃NH₃PbI₃ sensitizer only. The key to these enhancement is the presence of [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM), which acts as charge separation and electron trapping sites, resulting in a 30‐fold increase in the photoresponsivity. This work shows that the use of a small amount of electron or hole acceptors in the sensitizer layer can be an effective strategy for improving and tuning the photoresponsivity of sensitizer/GFET photodetectors.     

Native Defect‐Induced Hysteresis Behavior in Organolead Iodide Perovskite Solar Cells

Despite the high power conversion efficiency and ease of fabrication, planar‐junction organolead halide perovskite solar cells often exhibit anomalous hysteretic current–voltage (I–V) characteristics. In this work, the origin of the I–V hysteresis is studied by fine‐tuning the precursor ratio of methylammonium lead iodide and thus varying the native defects in the material. It is shown that the perovskites synthesized from “PbI₂ excess,” “methylammonium iodide excess,” and “stoichiometric” precursors exhibit identical film morphology but different I–V hysteresis in a planar solar cell configuration. Through a comparative analysis on the temperature‐dependent continuous and stepwise‐stabilized I–V responses of the three devices, a model involving transport and trapping of the ionic native defects is proposed. The active energy of the transport process is estimated to be between 0.10 and 0.18 eV, most likely associated with the vacancy‐mediated iodide ion migration. The lower activation energy of the “PbI₂ excess” and “Stoichiometric” samples indicates that the presence of methylammonium vacancies may provide a favorable pathway for the migration of iodide ions due to reduced steric hindrance. Furthermore, the slow trapping and release processes of iodide ions at the TiO₂/perovskite interface are accounted for the long time scale current decay (or raise) following a voltage change.     

Tailoring Electron‐Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces

The interfacial electronic structure between oxide thin films and organic semiconductors remains a key parameter for optimum functionality and performance of next‐generation organic/hybrid electronics. By tailoring defect concentrations in transparent conductive ZnO films, we demonstrate the importance of controlling the electron transfer barrier at the interface with organic acceptor molecules such as C₆₀. A combination of electron spectroscopy, density functional theory computations, and device characterization is used to determine band alignment and electron injection barriers. Extensive experimental and first principles calculations reveal the controllable formation of hybridized interface states and charge transfer between shallow donor defects in the oxide layer and the molecular adsorbate. Importantly, it is shown that removal of shallow donor intragap states causes a larger barrier for electron injection. Thus, hybrid interface states constitute an important gateway for nearly barrier‐free charge carrier injection. These findings open new avenues to understand and tailor interfaces between organic semiconductors and transparent oxides, of critical importance for novel optoelectronic devices and applications in energy‐conversion and sensor technologies.     

The Effects of Electronic Impurities and Electron–Hole Recombination Dynamics on Large‐Grain Organic–Inorganic Perovskite Photovoltaic Efficiencies

Hybrid organic‐inorganic perovskites have attracted considerable attention after promising developments in energy harvesting and other optoelectronic applications. However, further optimization will require a deeper understanding of the intrinsic photophysics of materials with relevant structural characteristics. Here, the dynamics of photoexcited charge carriers in large‐area grain organic‐inorganic perovskite thin films is investigated via confocal time‐resolved photoluminescence spectroscopy. It is found that the bimolecular recombination of free charges is the dominant decay mechanism at excitation densities relevant for photovoltaic applications. Bimolecular coefficients are found to be on the order of 10^?9 cm³ s^?1, comparable to typical direct‐gap semiconductors, yet significantly smaller than theoretically expected. It is also demonstrated that there is no degradation in carrier transport in these thin films due to electronic impurities. Suppressed electron–hole recombination and transport that is not limited by deep level defects provide a microscopic model for the superior performance of large‐area grain hybrid perovskites for photovoltaic applications.     

The Mechanism of the Photodimerization of [60]Fullerene Derivatives: It is Still a Charge Separation Followed by a Back Transfer!

Herein, we present a systematic study of the photochemical behavior of a set of fullerene compounds bearing various organic addends attached to the fullerene cage. It has been shown that the yield of photodimerization products strongly depends on the structure and electronic properties of the material, primarily the electron affinity (acceptor strength) of the modified fullerene core. This finding being inconsistent with the conventional [2+2]cycloaddition mechanism and pointed to an alternative pathway. This proposed pathway involves photoinduced charge separation followed by back charge transfer events leading to the efficient generation of triplet excitons, which are responsible for the formation of dimerized species. The light-induced charge separation pathway was confirmed by electron spin resonance spectroscopy and was supported by theoretical calculations. The revealed mechanism allows one to control the photochemical behavior of the fullerene derivatives via rational structural engineering: some of the compounds were shown to be fully resistant to photodimerization, which makes them promising candidates in the development of stable organic photovoltaics. Furthermore, this approach could be used to suppress back charge transfer in donor-acceptor blends and hinder the formation of triplet excitons which represents one a major energy loss channel in the current generation of organic solar cells.     

Exotic Structural and Optoelectronic Properties of Layered Halide Double Perovskite Polymorphs

Discovering new types of layered perovskites has great importance for designing novel optoelectronic devices. In this article, combining first-principle calculations with global structure searching, it is found that Rb₄SnSb₂Br₁₂, a typical halide double perovskite, can unexpectedly possess fertile low formation-energy polymorphs holding van de Walls (vdW) layered structures. Consequently, these polymorphs can be effectively classified into 12 types according to their local octahedral motifs, exhibiting a wide range of bandgap covering the visible spectrum. Interestingly, the structure-dependent bandgap in these polymorphs can be well understood by developing a simple machine learning model. Moreover, as a layered system, the optoelectronic properties of Rb₄SnSb₂Br₁₂ can be effectively tuned by the layer thickness, and both type-I and type-II band alignment can be achieved in single-compound Rb₄SnSb₂Br₁₂ heterojunctions. Finally, it is suggested that the Sn-moderate condition can be considered to grow intrinsic p-type Rb₄SnSb₂Br₁₂ with lower defect density. Those findings not only provide a promising material system for designing the vdW tandem solar cell, but also offer a new opportunity to achieve exotic optoelectronic applications in a single-phase layered perovskite compound.     

Optoelectronic Synapses and Photodetectors Based on Organic Semiconductor/Halide Perovskite Heterojunctions: Materials,Devices, and Applications

Both photodetectors (PDs) and optoelectronic synaptic devices (OSDs) are optoelectronic devices converting light signals into electrical responses. Optoelectronic devices based on organic semiconductors and halide perovskites have aroused tremendous research interest owing to their exceptional optical/electrical characteristics and low-cost processability. The heterojunction formed between organic semiconductors and halide perovskites can modify the exciton dissociation/recombination efficiency and modulate the charge-trapping effect. Consequently, organic semiconductor/halide perovskite heterojunctions can endow PDs and OSDs with high photo responsivity and the ability to simulate synaptic functions respectively, making them appropriate for the development of energy-efficient artificial visual systems with sensory and recognition functions. This article summarizes the recent advances in this research field. The physical/chemical properties and preparation methods of organic semiconductor/halide perovskite heterojunctions are briefly introduced. Then the development of PDs and OSDs based on organic semiconductor/halide perovskite heterojunctions, as well as their innovative applications, are systematically presented. Finally, some prospective challenges and probable strategies for the future development of optoelectronic devices based on organic semiconductor/halide perovskite heterojunctions are discussed.     

A Regularity-Based Fullerene Interfacial Layer for Efficient and Stable Perovskite Solar Cells via Blade-Coating

The electron transport layer (ETL) plays a crucial part in extracting electron carriers while optimizing the interfacial contact of perovskite/electrode in planar heterojunction perovskite solar cells (PVSCs). Despite various ETLs being designed for efficient PVSCs, there exists hardly any research on the effect of molecular stacking order on device performance. Herein, poly(ethylene-co-vinyl acetate) (EVA) is employed as the [6,6]-phenyl-C₆₁-butyric acid methyl ester (PC₆₁BM) solution additive. The strong binding energy between EVA with PC₆₁BM promotes the molecular stacking order of ETLs, which alleviates the morphology inhomogeneity, possesses a matched energy level, blocks ion migration, and improves the water–oxygen barrier of perovskite devices. The blade-coated MAPbI₃-based PVSCs achieve a power conversion efficiency (PCE) of 19.32% with positive reproducibility and negligible hysteresis, as well as maintain 90% and 80% of the initial PCE after storage under inert and ambient conditions (52% humidity) for 1500 h without encapsulation. This strategy also improves the champion PCE of CsFAMA-based PVSCs to 20.33%. These findings demonstrate that the regulation of molecular stacking order is a valid approach to optimize interfacial charge-carrier recombination in PVSCs, which meet the demand for high-performance ETL in large-area PVSCs and improve the upscaling of the fabrication technology toward practical applications.     

Formation Mechanism of Fullerene Cation in Bulk Heterojunction Polymer Solar Cells

The charge carrier dynamics in blend films of [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM) and conjugated polymers with different ionization potentials are measured using transient absorption spectroscopy to study the formation mechanism of PCBM radical cation, which was previously discovered for blend films of poly[2‐methoxy‐5‐(3,7‐dimethyloctyloxy)‐1,4‐phenylenevinylene] (MDMO‐PPV) and PCBM. On a nanosecond time scale after photoexcitation, polymer hole polaron and PCBM radical anion are observed but no PCBM radical cation is found in the blends. Subsequently, the fraction of polymer hole polarons decreases and that of PCBM radical cations increases with time. Finally, the fraction of PCBM radical cations becomes constant on a microsecond time scale. The final fraction of PCBM radical cation is dependent on the ionization potential of polymers but independent of the excitation wavelength. These findings show that the formation of PCBM radical cation is due to hole injection from polymer to PCBM domains. Furthermore, the energetic conditions for such hole injection in polymer/PCBM blend films are discussed on the basis of Monte Carlo analysis for hole hopping in a disordered donor/acceptor heterojunction with varying energetic parameters.     

Perovskite/silicon-based heterojunction tandem solar cells with 14.8% conversionefficiency via adopting ultrathin Au contact

A rising candidate for upgrading the performance of an established narrow-bandgap solar technology without adding much cost is to construct the tandem solar cells from a crystalline silicon bottom cell and a high open-circuit voltage top cell. Here, we present a four-terminal tandem solar cell architecture consisting of a self-filtered planar architecture perovskite top cell and a silicon heterojunction bottom cell. A transparent ultrathin gold electrode has been used in perovskite solar cells to achieve a semi-transparent device. The transparent ultrathin gold contact could provide a better electrical conductivity and optical reflectance-scattering to maintain the performance of the top cell compared with the traditional metal oxide contact. The four-terminal tandem solar cell yields an efficiency of 14.8%, with contributions of the top (8.98%) and the bottom cell (5.82%), respectively. We also point out that in terms of optical losses, the intermediate contact of self-filtered tandem architecture is the uppermost problem, which has been addressed in this communication, and the results show that reducing the parasitic light absorption and improving the long wavelength range transmittance without scarifying the electrical properties of the intermediate hole contact layer are the key issues towards further improving the efficiency of this architecture device.     

Ultrafast Hole‐Transfer Dynamics in Polymer/PCBM Bulk Heterojunctions

Ultrafast dynamics of the hole‐transfer process from methanofullerene to a polymer in a polymer/PCBM bulk heterojunction are directly resolved. Injection of holes into MDMO‐PPV is markedly delayed with respect to [60]PCBM excitation. The fastest component of the delayed response is attributed to the PCBM–polymer hole‐transfer process (30 ± 10 fs), while the slower component (～150 fs) is provisionally assigned to energy transfer and/or relaxation inside PCBM nanoclusters. The charge generation through the hole transfer is therefore as fast and efficient as through the electron‐transfer process. Exciton harvesting efficiency after PCBM excitation crucially depends on the concentration of the methanofullerene in the blend, which is related to changes in the blend morphology. Ultrafast charge generation is most efficient when the characteristic scale of phase separation in the blend does not exceed ～20 nm. At larger‐scale phase separation, the exciton harvesting dramatically declines. The obtained results on the time scales of the ultrafast charge generation after PCBM excitation and their dependence on blend composition and morphology are instrumental for the future design of fullerene‐derivative‐based photovoltaic devices.