射频溅射法制备硫化钨固体润滑薄膜的研究

本文研究了采用射频溅射法以3Cr13马氏体不锈钢为基片制备硫化钨薄膜.实验分别采用了不同的溅射功率、工作气压和沉积时间来制备样品.之后对三组样品分别进行物相分析、表面形貌观察、测定微区化学成分、结合力和摩擦系数.结果表明:通过射频溅射法可获得非晶态WS2薄膜,薄膜的S/W比一般小于2,并受溅射工艺影响较为明显,随着溅射功率的升高逐渐降低,随着溅射时间的延长明显升高.薄膜结合力受溅射工艺影响并不显著.通过射频溅射所获得薄膜的摩擦系数在一定范围内与其硫钨比成反比.     

Ba铁氧体溅射薄膜的研究

研究了射频溅射制备Ｂａ铁氧体薄膜的成膜条件对晶化、晶体结构及磁性能的影响。我们的工作表明，为了使射频溅射Ｂａ铁氧体薄膜形成磁铅石结构的晶体，基板温度需高于６００℃，更高的基板温度可获得好的Ｃ轴垂直取向。非晶膜经热处理晶化所需温度要比直接溅射温度高得多。过大、过小的氧气分压不利于垂直膜的生成。使用挡板对最小溅射角限制以后，可在小的基板－靶间距情况下定得Ｃ轴垂直取向的薄膜。     

四极溅射装置及其在制造钽、二氧化硅和氧化铝薄膜方面的应用

本文阐述了四极溅射装置的基本结构、放电特性和溅射速率。同时也报导了该装置淀积的钽、二氧化硅和氧化铝膜的电气和物理化学特性的实验结果。溅射装置的电极是由一个热灯丝阴极、一个阳极、一个靶极和一个能在低于1× 10-3乇氩气压强下起燃放电的点火电极组成的。磁场的作用在于约束靶和对面基片之间的等离子区。溅射在玻璃基片上的钽膜是氩气压强PA和靶电压VT的函数。用射频溅射法分别把熔融石英和陶瓷氧化铝片,淀积形成二氧化硅膜和氧化铝膜,并且,把它们之间的红外线吸收光谱和介电常数作了比较,对二氧化硅膜电容与频率的相依关系也进…     

涤纶非织造布表面沉积ITO纳米薄膜的微观结构分析

采用低温磁控溅射技术在涤纶纺粘非织造布表面沉积ITO(Indium Tin Oxide,铟锡氧化物)薄膜,利用原子力显微镜(AFM)观察ITO纳米薄膜在纤维表面沉积的微观结构,并较为系统地分析了溅射时间、溅射功率、氧气流量、气体压力以及基底温度对ITO透明导电薄膜微结构的影响.得到以下结论:沉积时间的长短、工作气体压力的大小对成膜的均匀性有很大影响;较高的射频溅射功率将导致纳米颗粒因团聚而增大;而氧气流量的大小则影响着颗粒结晶程度的好坏和晶粒尺寸的大小;基底温度升高则会导致颗粒产生热迁移现象.     

DC反应溅射时防止异常放电的电源（A~2K）

日本真空技术株式会社研制的Ａ２Ｋ装置可以有效地抑制ＤＣ溅射中的异常放电，而这在以往的传统方式ＤＣ溅射中是做不到的。在进行易于出现异常放电的溅射成膜时，采用在ＤＣ电源上加上Ａ２Ｋ的方法，被证明确实有效地减少了异常放电的发生。     

DC反应溅射时防止异常放电的电源（A^K）

日本真空技术株式会社研制的Ａ＾２Ｋ装置可以有效地抑制ＤＣ溅射中的异常放电，而这在以往的传统方式ＤＣ溅射中是做不到的。在进行易于出现异常放电的溅射成膜时，采在ＤＣ电源上加上Ａ＾２Ｋ的方法，被证明确实有效地减少了异常放电的发生。     

非晶FeSiB薄膜中的巨磁阻抗效应

采用射频溅射法在三组不同溅射条件下制备了ＦｅＳｉＢ薄膜。测量了溅射薄的磁滞回线，并利用ＨＰ４１９４Ａ阻抗分析仪，在１－４０ＨＭｚ频率范围内研究了样品的巨磁阻抗效应。     

射频溅射法制备的纳米硅薄膜的能带结构和Ⅰ-Ⅴ特性

用高频溅射法在P型硅衬底上生长了纳米硅薄膜,衬底温度控制在95℃左右,工作气体选用H2+Ar,氢气的分压控制在31%到70%,同时改变薄膜的沉积时间.Tauc曲线显示出用射频溅射法制备的薄膜是一种宽带隙材料.结合实验数据,在HQD理论基础上,给出了这种薄膜的能带结构图,并在理论和实验上分别对薄膜的Ⅰ-Ⅴ特性进行了研究.     

不同射频溅射功率下直接制备Ca_2Si薄膜(英文)

磁控溅射系统在恒定Ar气压和Ar气流流量下,使用不同射频溅射功率在Si(100)衬底上分别沉积Ca薄膜;随后,800℃真空退火1 h.立方相的Ca2Si薄膜首次、单独、直接生长在Si(100)衬底上.实验结果指出,在多相共生的Ca-Si化合物中,沉积Ca薄膜时的射频溅射功率影响了立方相Ca2Si薄膜的质量;最优化的溅射功率是85 W.另外,退火温度为800℃时,有利于单一相Ca2Si的独立生长.并且,退火时间也是关键因素.     

聚焦重离子束溅射沉积薄膜

本文介绍了聚焦重离子束溅射装置的结构和运行参数。该装置的最高加速电压为10kV,最大离子束流为2mA,蕞小离子束斑为φ1.5mm。利用这台装置,沉积了二十六种金属材料的有衬底薄膜、五种元素的无衬底薄膜和一些稀土氧化物薄膜。研究了单位面积沉积率与靶材质量数的关系。给出了一些升华材料的溅射沉积参数。     

基于磁控溅射制备纳米微晶NiO_x薄膜的方法

使用一种配套于磁控溅射设备的基片液氮冷却装置制备了小颗粒度纳米微晶NiOx电致变色薄膜.当溅射参数完全相同时,借助于对基片的冷却可有效控制并降低NiOx薄膜的晶粒尺度.冷却基片所制备的NiOx薄膜的电致变色性能明显优于室温时制备的薄膜,且该薄膜的O/Ni比率也明显高于室温时制备的NiOx薄膜的O/Ni比率.     

Facing targets type of sputtering method for deposition of magnetic metal films at low temperature and high rate

A new type of cathode sputtering apparatus with two targets facing each other has been developed to prepare magnetic films at a high deposition rate without the extreme rise of the substrate temperature. When two disks of iron and nickel were used as targets, the maximum deposition rates obtained were approximately 4000 and 5000 Å/min, respectively. The substrate temperature was not elevated above 200°C during sputtering. The high rate deposition of Mo permalloy films also was attempted by co-sputtering of two facing targets composed of disks of iron and nickel and chips of molybdenum. The Vicker's hardness of the obtained Mo permalloy films was about 900 and the typical values of permeability at 1 MHz magnetic field and coercive force at dc magnetic field of them were about 2500 and 0.16 Oe, respectively.     

无马达驱动的旋转圆柱形磁控溅射器

在大型薄膜连续生产线中,磁控溅射器的溅射速率、使用周期是影响生产效率与成本的重要因素.本文提出一种新型的无马达驱动的具有高溅射速率、高靶材利用率、长的靶使用周期、安装与使用简单的磁控溅射器.可广泛应用于各类大、中型连续生产设备中.     

溅射功率对CdZnTe薄膜成分和结构的影响

采用Cd0.9Zn0.1Te晶体作为溅射靶在玻璃衬底上利用磁控溅射法制备出CdZnTe薄膜,研究了溅射功率对CdZnTe薄膜的成分、结构特性的影响。制备的CdZnTe薄膜是具有闪锌矿结构的多晶薄膜,沿（111）择优取向。随着溅射功率的增大,薄膜沉积速率增大,薄膜结晶质量提高。采用晶体靶Cd0.9Zn0.1Te溅射CdZnTe薄膜时,无论是在何种功率下CdZnTe薄膜中的Cd原子成分均高于Te原子成分,Cd原子表现为择优溅射原子。     

中频磁控溅射技术制备Co-Ni合金薄膜

由于电镀硬铬对环境有一定的污染,因而选择合适的制备方式和合适的替代硬铬的材料具有一定的实际意义。本文选用Co-Ni作为硬铬的替代材料,并采用中频磁控溅射的方式在铜基底上制备Co-Ni合金薄膜,重点研究了溅射功率与Co-Ni合金薄膜的沉积速率、成分的关系,结果表明沉积速率随溅射功率的增加而增加;溅射功率在0.8~1.1 kW之间时,薄膜成分与靶材成分基本一致;并把1.1 kW时制备的Co-Ni合金薄膜的电极化腐蚀性能与电镀Cr薄膜、离子镀Cr薄膜相比较,结果表明Co-Ni合金的腐蚀电位可达到-0.245 V,具有较强的耐腐蚀性。     

R.F. reactive sputter deposition of hydrogenated amorphous silicon carbide films

The preparation of hydrogenated amorphous silicon carbide films by r.f. reactive sputtering of a silicon target in Ar-CH₄ gas mixtures with and without an r.f. bias on the substrates was studied. Starting with a pure silicon target and increasing monotonically the CH₄ percentage from 0% to about 10%, films with 1 ⩾ x ⩾ 0 were obtained at decreasing deposition rates. After sputtering for some hours in methane-rich gas mixtures, carbon atoms were incorporated into the silicon target surface, probably as a result of atomic peening, and nearly stoichiometric SiC films were prepared by sputtering of such a target in pure argon. The different mechanisms of film formation, deposition rate, composition, hardness, friction coefficient and stresses in the films as functions of the partial pressure of methane and the value of the r.f. bias were investigated. The IR spectra offilms with different carbon contents were analysed. The greatest hardness was found for nearly stoichiometric SiC films deposited with a bias.     

射频磁控反应溅射制备Al2O3薄膜的工艺研究

采用射频磁控反应溅射法,以高纯Al为靶材,高纯O2为反应气体,在不锈钢和单晶Si基片上成功地制备了氧化铝(Al2O3)薄膜,并对氧化铝薄膜的沉积速率、结构和表面形貌进行了研究.结果表明,沉积速率随着射频功率的增大先几乎呈线性增大而后缓慢增大;随着溅射气压的增加,沉积速率先增大,在一定气压时达到峰值后继续随气压增大而减小,同时随着靶基距的增大而减小;随着氧气流量的不断增加,靶面溅射的物质从金属态过渡到氧化物态,沉积速率也随之不断降低.X射线衍射图谱表明薄膜结构为非晶态;用原子力显微镜对薄膜表面形貌观察,薄膜微结构为柱状.     

Internal stresses in sputtered chromium

This investigation delineates the effects of deposition rate, working pressure and nature of the working gas on the internal stresses found in wafers of chromium sputtered onto glass using a magnetron-type post-cathode sputtering apparatus. Attention is focused on the thickness range between 0.1 and 0.3 μm, where the measured force per unit width accumulates linearly with film thickness and where the effects of substrate heating are small. High compressive stresses develop when sputtering proceeds at low working pressures and moderate deposition rates. Raising both the deposition rate and the working pressure reduces the magnitude of film compression. The most pronounced effect is that of an increase in pressure, which causes first a complete reversal of stress from high compression to high tension and then a more gradual decrease towards zero. This behavior is the same for sputtering in argon or krypton. Analysis of the chromium films reveals no entrapped gas or structural changes to account for the onset of compression at reduced working pressures. The behavior closely resembles stress changes reported in the literature for bias sputtering as a function of substrate voltage. It is proposed that film compression in both cases results from peening of the depositing film by accelerated ions or neutral atoms.     

Properties of TiO2 Thin Films Prepared by Magnetron Sputtering

With rapid progressive application of TiO2 thin films,magnetron sputtering becomes a very interesting method to prepare such multi-functional thin films.This paper focuses on influences of various deposition processes and deposition rate on the structures and properties of TiO2 thin films.Anatase,rtile or amorphous TiO2 films with various crystalline structures and different photocatalytic,optical and electrical properties can be produced by varying sputtering gases,substrate temperature,annealing process,deposition rate and the characteristics of magnetron sputtering.This may in turn affect the function of TiO2 films in many applications.Furthermore,TiO2-based composites films can overcome many limitations and improve the properties of TiO2 films.     

射频磁控溅射制备SiO_2膜

利用石英靶射频磁控溅射制备SiO2膜的工艺，采用L型阻抗匹配网络，并计算得到了等离子体的等效电容及等效电导。指出射频功率密度是最重要的沉积参数，靶面自偏压及SiO2膜沉积速率均随功率密度的增加而线性增加。溅射气压及氧分压对自偏压的影响较小，但两者的增加将导致SiO2沉积速率的降低。制备了可见光区透光性良好，折射率为1．46，沉积速率为35nm／min的SiO2膜。