沉积气压对电弧离子镀制备ZnO薄膜的结构和性能影响

采用阴极真空电弧离子镀技术在玻璃衬底上制备出了具有择优取向的透明ZnO薄膜. 利用X射线衍射仪、扫描电子显微镜及紫外-可见吸收光谱仪分别对ZnO薄膜的结构、表面形貌及可见光透过率进行了分析.XRD结果表明,所制备的ZnO薄膜具有六角纤锌矿结构的(002)和(101)两种取向,在沉积气压＞1.0Pa时所制备的ZnO薄膜具有(002)择优取向,并且非常稳定.SEM图表明,ZnO晶粒大小较为均匀,晶粒尺寸随着气压升高而变小.在400～1000nm范围内,ZnO薄膜的可见光透过率超过80%,吸收边在370nm附近,所对应的光学带隙约为3.33～3.40eV,并随着沉积气压上升而变大.     

沉积气压对磁控溅射制备ZnO薄膜的结构与光学性能影响

采用CS-400型射频磁控溅射仪在Si(111)和石英基底上成功的制备了ZnO薄膜,分别用XRD、SEM、紫外-可见光分光光度计和荧光分光光度计表征样品的结构和光学性质.实验表明,采用射频磁控溅射制备的ZnO薄膜具有六角纤锌矿结构的(002)峰和(101)峰的两种取向.在沉积气压>1.0Pa时所制备的ZnO薄膜具有(002)择优取向,并且十分稳定.SEM图表明,ZnO薄膜颗粒大小较为均匀,晶粒尺寸随着气压升高而变小,沉积气压不同时,薄膜样品的生长方式有所差异.在400～1000nm范围内,可以看出除O.5Pa下制备的ZnO薄膜外,其余ZnO薄膜在可见光区域的平均透过率超过80%,吸收边在380nm附近,所对应的光学带隙约为3.23～3.27eV,并随着沉积气压上升而变大.ZnO薄膜的PL谱上观察到了392nm的近紫外峰和419nm的蓝峰;沉积气压对Zno薄膜的发光峰位和峰强有影响.     

化学水浴沉积时间对CdS薄膜性质的影响

采用CBD法在醋酸镉溶液体系中制备CdS半导体薄膜,通过XRD、XRF、SEM和光学透过率谱等测试手段研究了沉积时间对CdS薄膜沉积过程和性质的影响.结果表明,随着沉积时间的增加,薄膜增厚;S/Cd原子比增加,但都为富Cd的CdS薄膜;XRD研究表明,薄膜结构由立方、六方混合相向立方相转变,(111)方向成为择优生长方向;SEM研究表明,随沉积时间增加,薄膜变致密,薄膜表面出现的白色附着颗粒增多,尺寸增大;沉积时间对薄膜的光学性质也有很大的影响,随着沉积时间的增加薄膜透过率减小,而禁带宽度值增大.     

磁控溅射VO_2薄膜的制备及光学性能研究

本文采用超高真空射频磁控溅射法,通过改变沉积气压、沉积时间以及进行退火处理在普通白玻基底上制备VO_2薄膜。利用XD-3型X射线衍射仪对薄膜的物相进行分析,UV-3600多功能分光光度计测试薄膜在可见光段的透过率,XP-2型台阶仪测试薄膜样品的厚度,扫描电子显微镜观察样品的微观形貌。结果表明,沉积气压为0.7Pa时获得的薄膜在可见光波段具有较高的透过率;沉积时间为60min时,薄膜较为平整且对可见光的透过率较高为38%;退火处理提高了薄膜的结晶性和透过率,制备出单斜结构的VO_2薄膜,且具有(011)晶面择优取向。     

Si（111）衬底上沉积LaNiO3薄膜的取向控制和导电性能研究

通过金属有机物沉积的方法在Si（111）衬底上成功制备出了高度（100）和（110）取向的LaNiO3薄膜。研究了不同热处理过程、薄膜厚度、前驱体溶液对LaNiO3取向的影响,以及厚度热处理温度、（100）方向的取向度与薄膜方阻之间的关系。LaNiO3薄膜的相结构由XRD（X射线衍射）分析,薄膜的晶粒大小和表面粗糙度由AFM（原子力显微镜）分析。     

硅基氧化铱薄膜的脉冲激光沉积及其微观结构研究

采用脉冲激光沉积技术，在Si（100）基片上制备了高致密的氧化铱（IrO2）薄膜，研究了不同沉积温度对薄膜结构的影响。利用X射线衍射（XRD）、拉曼光谱、扫描电镜（SEM）和原子力显微镜（AFM）对制备的IrO2薄膜进行了表征。结果表明：在20Pa氧分压，250℃～500℃范围内，得到的薄膜为多晶的IrO2物相，其晶粒尺寸和粗糙度随着沉积温度的升高而增加；所得到的IrO2薄膜表面粗糙度低，厚度均匀，与基片结合良好。     

氧分压对动态离子束辅助沉积合成的氧化钛膜的影响

采用离子束增强沉积的方法,改变氧分压,在硅基体表面制备出了不同组分及不同取向的 氧化钛薄膜。采用 XRD,掠角衍射以及 XPS分析方法对薄膜的成分、结构和取向进行了分析,并 通过 RBS分析计算出了薄膜的 O/Ti比。实验结果发现,所制备的氧化钛薄膜为具有一定择优取 向的多晶膜,薄膜内 TiO、 Ti2O3和 TiO2共同存在。当氧分压低于 8.4× 10-4 Pa时,氧化钛薄膜的 成分以 TiO为主,且 TiO的取向随氧分压的增加从（ 220）向（ 031）转变,氧分压对薄膜取向的影响 较大。当氧分压高于 8.6× 10-4 Pa时,氧化钛薄膜的成分以具有（ 100）择优取向的金红石型 TiO2 为主,含有少量其他结构的 TiO2和低价 Ti,其成分及取向相对较为稳定,对氧分压的变化不敏感。     

射频磁控溅射沉积高质量ZnO薄膜的工艺研究

在室温下利用射频磁控溅射法在硅(100)基片上制备ZnO薄膜,利用X射线衍射(XRD)和扫描电子显微镜(SEM)对其结晶性能进行分析。研究了制备条件对薄膜沉积速率的影响。分析了薄膜沉积速率对薄膜结晶状况的影响及源气体中的氧气和氩气的流量比对薄膜结晶状况的影响。研究结果表明,薄膜的生长速率强烈依赖于射频功率和工作气压,薄膜的结晶性能强烈依赖于薄膜的沉积速率和反应气体中氧气和氩气的流量比。制备高结晶质量的ZnO薄膜的最佳工艺参数为靶到衬底的距离为4cm,输入功率为250W,源气体中氩气和氧气的流量比n(Ar)∶n(O2)为5∶20,溅射工作气压为2Pa。在最佳工艺条件下所制备的薄膜表面平整致密,接近单晶,在可见光区的透射率高达90%。     

微波液相沉积法制备二氧化钛薄膜

采用微波液相沉积法(MWLPD),在低温下制备出了性能优异的锐钛矿型TiO2薄膜.通过XRD、SEM分析手段研究了薄膜和粉体的结晶度、晶粒尺寸、表面形貌等.实验结果表明,所得薄膜不仅具有良好的结晶形貌、表面形貌及可见光透过率,还具有特殊的表面凸起结构,能有效提高薄膜的比表面积,有助于提高TiO2薄膜的光催化性能.且整个制备过程无需热处理,成膜周期短,效率较高.     

衬底温度对钇稳定氧化锆薄膜择优生长的影响

使用脉冲激光沉积(PLD)技术在Si(100)衬底上沉积钇稳定的氧化锆(YSZ)薄膜,用XRD分析薄膜的结晶取向,SEM和AFM观测薄膜表面形貌,研究了在200-650℃的不同衬底温度下薄膜的择优生长.结果表明:衬底温度较低的YSZ薄膜为非晶组织,衬底温度为300-500℃时YSZ晶粒以表面能低的(111)面首先择优生长,衬底温度超过550℃后晶粒活化能提高而使表面能较高的(100)晶粒择优生长.YSZ薄膜是典型的岛状三维生长模式,较高的衬底温度有利于原子在衬底表面迁移和重排结晶长大.同其它沉积技术相比,用PLD技术能在比较低的衬底温度下在Si(100)表面原位外延生长出较高质量的YSZ薄膜.     

Epitaxial growth of RuO2 thin films by metal-organic chemical vapor deposition

Conductive RuO₂ thin films were epitaxially grown on LaAlO₃(100) and MgO(100) substrates by metal-organic chemical vapor deposition (MOCVD). The deposited RuO₂ films were crack-free, and well adhered to the substrates. The RuO₂ film is (200) oriented on LaAlO₃ (100) substrates at deposition temperature of 600°C and (110) oriented on MgO(100) substrates at deposition temperature of 350°C and above. The epitaxial growth of RuO₂ on MgO and LaAlO₃ is demonstrated by strong in-plane orientation of thin films with respect to the major axes of the substrates. The RuO₂ films on MgO(100) contain two variants and form an orientation relationship with MgO given by RuO₂(110)//MgO(100) and RuO₂[001]//MgO[011]. The RuO₂ films on LaAlO₃(100), on the other hand, contain four variants and form an orientation relationship with LaAlO₃ given by RuO₂(200)//LaAlO₃(100) and RuO₂[011]//LaAlO₃[011]. Electrical measurements on the RuO₂ thin films deposited at 600°C show room-temperature resistivities of 40 and 50 μΩ cm for the films deposited on the MgO and LaAlO₃ substrates, respectively.     

Structural study of thin MgO layers on Ag(001) prepared by either MBE or sputter deposition

Growth, morphology and structure of thin MgO films prepared on Ag(001) substrates by different preparation procedures have been investigated by AES, LEED and modulated electron emission. Oxide layers were prepared by Mg MBE in an oxygen atmosphere or sputter deposition from bulk MgO target. In both cases stoichiometric MgO forms, which initially grows in a rocksalt tetragonally distorted structure. For 3-ML films, 3.6% expansion of the interlayer spacing along the growth axis has been measured. The misfit strain progressively reduces as the film thickness increases, and the equilibrium spacing is completely recovered at 8–10 ML thickness. In spite of the similarity in structure and strain, different deposition procedures lead to different film morphology. Sputter deposited films only partially cover the substrate. Fractional coverage (50%) has been evaluated for the 3-ML thick film, and full coverage only occurs at approximately 10 ML thickness. The MBE procedure results in almost complete layers. Fourfold broadening of spot profiles has been observed in LEED patterns of both MBE and sputter deposited films, indicating the occurrence of a similar large-scale atomic arrangement and surface morphology.     

电泳沉积法制备GaN薄膜的结构和组分分析

采用电泳沉积法在Si(111)衬底上制备出了GaN薄膜.用X射线衍射(XRD)、傅立叶红外吸收(FTIR)谱、X射线光电子能谱(XPS)和扫描电镜(SEM)对样品的结构、组分和形貌进行了分析.结果显示所得样品为六方纤锌矿结构的GaN多晶薄膜.     

Characteristics improvement of metalorganic chemical vapor deposition grown MgZnO films by MgO buffer layers

MgZnO films with a small quantity of Mg were grown on c-sapphire substrates coated with a thin MgO buffer layers by metalorganic chemical vapor deposition. The MgO buffer layer causes improvement in the structural, optical, and electrical properties of subsequently deposited MgZnO thin films, when compared to MgZnO films deposited without a buffer layer. The MgZnO films with a MgO buffer layer grown at 330 °C showed the best performance. Transmission electron microscopy revealed that the cubic phase MgO buffer layer promoted the epitaxial behavior of MgZnO, where the planar relationships of the wurtzite-MgZnO/cubic-MgO/sapphire heterostructures mainly were MgZnO(0001)//MgO(001)//sapphire(0001) and MgZnO(11?00)//MgO(110)//sapphire(112?0). It resulted in lower lattice mismatch between MgO and MgZnO by domain epitaxy of 2/1 and enhancement in preferred growth of the MgZnO films along the c-axis.     

Excimer laser deposition and characteristics of tin oxide thin films

ArF excimer laser assisted chemical vapor deposition of tin oxide thin films on Si was obtained using SnCl₄ and O₂ as precursors. Experimental measurements revealed that the deposition rate increases with incident laser energy density. The composition, structure and ultraviolet-to-visible spectra of the thin films were investigated by means of XPS, SEM, XRD and a UV–Vis techniques. It was shown that SnO₂ and SnOCl₂ coexisted in the thin films, and SnOCl₂ was almost completely converted into SnO₂ after annealing. The SnO₂ thin films deposited at room temperature were amorphous in structure and the grain size of the films became larger after annealing. The transmittance of the SnO₂ thin films is above 90%, the absorption edge is 355 nm and the energy gap is 3.49 eV.     

Study of ZnO layers growth by pulsed laser deposition from Zn and ZnO targets

The article deals with structural properties of ZnO thin layers prepared on Si (111) by pulsed laser deposition at different pressures (1-35 Pa) of ambient oxygen in the deposition chamber. The growth temperature was 400 °C and a pulsed Nd:YAG laser was used at a wavelength of 355 nm. Two parallel sets of samples deposited by ablation of different targets (a sintered ceramic pellet of ZnO and a pure metallic Zn target) were examined. The samples were characterized by different analytical methods: scanning electron microscope (SEM), secondary ion mass spectroscopy (SIMS), and X-ray diffraction (XRD). The prepared layers exhibited columnar structure and uniform preferred c-axis orientation. The results showed that deposition of the high quality of ZnO films fabricated from both targets is comparable, except for those obtained at low (1 Pa) pressures.     

ZnO thin films epitaxially grown by electrochemical deposition method with constant current

The electrochemical deposition (ECD) method is well suited to the preparation of large area devices and has several advantages, although the deposited films have a crystallinity problem. A constant current deposition method was employed for preparation of ZnO thin films in this study, because it was expected that the growth rate of the films could be controlled by means of the current density. The intensity of X-ray diffraction (XRD) peaks, and the size and shape of grains of ZnO films grown on polycrystalline Au substrates were observed to depend on the cathodic current density. On the basis of those results, deposition of ZnO on a Pt layer epitaxially grown on c-sapphire was carried out. The results of ?-scan XRD measurements showed in-plane orientation in agreement with the in-plane direction of the Pt substrate layer, which suggests that the ZnO thin film was epitaxially grown by the ECD method.     

Pulsed laser deposition of silicon-substituted hydroxyapatite coatings

Thin films of Si-substituted hydroxyapatite (Si-HA) were deposited on Si and Ti substrates by pulsed laser deposition (PLD), in the presence of a water vapour atmosphere. The PLD ablation targets were made with different mixtures of commercial carbonated HA and Si powder, in order to produce the Si-HA thin films. The physicochemical properties of the coatings and the incorporation of the Si into the HA structure was studied by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The Si atoms were successfully incorporated into the HA structure, and were found to be in the form of SiO₄⁴⁻ groups, principally displacing carbonate groups off the HA structure.     

Annealing effect of thermal spike in MgO thin film prepared by cathodic vacuum arc deposition

MgO films were prepared by using pulsed cathodic vacuum arc deposition technique. The substrate bias voltage was in the range of −150 to −750 V. Film structure was investigated by X-ray diffraction (XRD). The annealing effect of thermal spike produced by the impacting of energetic ions was analyzed. The calculated results showed that the lifetime of a thermal spike generated by an energetic ion with the energy of 150 eV was less than one picosecond and it was sufficient to allow Mg²⁺ or O^2- to move one bond length to satisfy the intrinsic stress relief in the affected volume. The MgO(200) lattice spacings of the films deposited at different bias voltages were all larger than the ideal value of 2.1056 Å. As the bias amplitude increased the lattice spacing decreased, which indicated that the compressive stress in the film was partially relieved with increasing impacting ion energy. The stress relief also could be reflected from the film orientation with bias voltage. The biaxial elastic modulus for MgO(100), MgO(110) and MgO(111) planes were calculated and they were M₍₁₀₀₎ = 199 GPa, M₍₁₁₀₎ = 335 GPa and M₍₁₁₁₎ = 340 GPa, respectively. The M values indicated that the preferred orientation will be MgO(200) due to the minimum energy configuration when the lattice strain was large. It was confirmed by the XRD results in our experiments.