阻挡层薄膜对染料敏化太阳能电池光电性能的影响

采用溶胶-凝胶法制备了不同浓度的TiO2溶胶,通过旋转涂覆法在光阳极导电玻璃基底上制备了阻挡层薄膜,以此来阻止导电玻璃基底上光生电子与电解液中I-3的复合,提高了染料敏化太阳能电池(DSSC,dye-sensitized solar cells)的光电转换效率.研究了不同TiO2溶胶浓度及阻挡层厚度对DSSC光电性能的影响.结果表明,由于阻挡层的引入有效地提高了DSSC的光电性能,最高光电转换效率达到了5.30%,比无阻挡层的DSSC的光电转换效率提高了大约27%.     

基于正交试验法TiO2纳米薄膜的制备及光电性能的研究

以商业TiO2纳米粉(P25)为原料,将其充分研磨得到胶体,用刮涂和热处理的方法在氟掺杂氧化锡导电玻璃基底上制备TiO2纳米多孔薄膜阳极,并组装成染料敏化太阳能电池(DSSC).对TiO2膜进行X射线衍射、扫描电镜表征分析,并对所制备的DSSC进行光电性能测试.采用正交实验设计优化制备TiO2胶体时乙酰丙酮、OP乳化剂、蒸馏水的量和研磨时间,并讨论其对DSSC性能的影响.用在最优参数下所得胶体制备的DSSC的光电转换效率最高,约为4.51％.     

FeS2/TiO2复合薄膜光电性能

采用溶液浸渍法在ITO导电玻璃表面的多孔TiO2薄膜上沉积了FeS2薄膜.使用Fe2O3粉末保护裸露在外的ITO导电膜在硫气氛中热处理后,制得了FeS2/TiO2复合薄膜.应用B531/H数显测厚指示表、数字式四探针测试仪、XJCM-8太阳电池测试仪等研究了FeS2/TiO2复合薄膜的厚度、ITO导电玻璃的电阻率以及FeS2/TiO2复合薄膜的光电性能.结果表明：此方法制得的FeS2/TiO2复合薄膜具有良好的光电性能;且ITO导电膜的电阻率变化较小.因而适宜制备色素增感太阳能电池（DSSC）.     

Cu_2O敏化ZnO纳米棒的制备及其对光电性质的影响

以透明导电玻璃(FTO)为基底,采用电化学沉积法制备了Cu_2O敏化的ZnO纳米棒阵列复合薄膜。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电镜(TEM)、高分辨电镜(HRTEM)、电化学工作站研究了不同Cu_2O沉积时间对复合薄膜的晶体结构、形貌、光电性质的影响。结果表明,电化学沉积的Cu_2O纳米晶可以与ZnO纳米棒形成异质结,提高ZnO纳米薄膜的光电转换效率,当Cu_2O的沉积时间为5min时,Cu_2O敏化ZnO纳米棒薄膜的光电转换效率最高。     

聚苯乙烯和聚乙二醇对TiO2薄膜微观结构及DSSC性能的影响

用水热法制备了多孔TiO2光电薄膜;分析了聚苯乙烯和聚乙二醇对纳米TiO2晶体薄膜微观结构的影响;用紫外-可见-近红外分光光度计和场发射扫描电镜对纳米TiO2薄膜进行了表征;并对组装的染料敏化太阳能电池进行了光电性能测试,发现用聚苯乙烯处理后的TiO2薄膜提高了染料敏化太阳能电池(DSSC)的开路电压、短路电流密度、填充因子和光电转换效率.     

微波辐射溶胶-凝胶法制备TiO2薄膜及其降解铬黑T的活性

通过微波辐射溶胶一凝胶法（sol-gel）法在导电玻璃（ITO）基体上制备TiO2纳米薄膜光催化剂，考察不同加热方式、微波时间、酸处理、薄膜层数等对TiO2纳米粒子及薄膜的影响。以可见光谱（UV-VIS）、X射线衍射（XRD）对TiO2薄膜进行了表征，并通过薄膜光催化降解铬黑T溶液的性能进行了研究。实验表明，ITO玻璃表面的TiO2纳米薄膜经HNO3和微波处理后，因协同效应使薄膜的光催化活性大大增强。     

多次水热法制备纳米TiO_2胶体在染料敏化太阳能电池中的应用

采用多次水热法制备颗粒大小不同的纳米TiO2胶体,应用于染料敏化太阳能电池,研究了不同水热次数得到的胶体对DSSC光电转化效率的影响。利用XRD、TEM和SEM对TiO2形貌进行表征,用UV-Vis测试TiO2膜对染料的吸附。结果表明,4次水热法制备的TiO2胶体的颗粒大小分布均匀,提高了电子在膜中的传输速率和TiO2薄膜对敏化染料的吸附量,进而提高了DSSC的光电转化效率。4次水热的光电转化效率最高,达到7.39%。     

TiO2/CuInS2复合纳米棒阵列的制备及其光电性能

采用两步溶剂热法在氧化氟锡(FTO)导电玻璃基底上制备了CuInS2敏化TiO2纳米棒阵列复合薄膜光阳极.利用X射线衍射仪(XRD)和扫描电子显微镜(SEM)表征了复合阵列薄膜的晶体结构和表面形貌,同时采用紫外可见吸收分光光度计(UV-Vis)及光电流电压(I-V)曲线研究了CuInS2敏化TiO2纳米阵列薄膜的光学及光电化学性质.研究结果表明,TiO2纳米棒阵列薄膜被CuInS2敏化后在可见光区的吸收有明显的增强.在模拟太阳光照射下(100 mW/cm2),利用这种复合薄膜作为光阳极组装的量子点敏化太阳能电池的开路电压为0.29 V,短路电流密度为0.15 mA/cm2,具有一定的光电转换能力.     

浆料组成对染料敏化多孔TiO2太阳能电池性能的影响

在TiO2粉体中加入不同量的聚乙二醇400、OP乳化剂和乙酰丙酮,经球磨得到TiO2浆料,采用丝网印刷的工艺方法在基底上制备了多孔TiO2薄膜阳极,组装成DSSC。采用SEM、XRD和电化学工作站进行了表征及测试;利用正交实验探讨了浆料中聚乙二醇400、OP乳化剂、乙酰丙酮的量和球磨时间对DSSC光电性能的影响。研究结果表明,浆料的最佳配方是聚乙二醇400为0.4mL、OP乳化剂为0.02mL、乙酰丙酮为0.6mL和球磨时间为4h,由此可使制备的DSSC光电转化效率(η)达到3.44%。     

铂分布形式对TiO2薄膜光电化学行为的影响

采用Sol-Gel法通过交替浸渍提拉工艺制备了Pt以不同形式分布的TiO2薄膜（均匀分布，底层分布）．采用三电极体系研究薄膜的光电化学行为，并用制备的薄膜组装成染料敏化纳米晶太阳能电池（DSSC），考察了DSSC的光电转换性能．结果显示：Pt底层分布的TiO2薄膜在紫外光照射下，三电极体系的光电流增强，乙醇作为空穴捕获剂添加到电解质体系中光电流进一步增强，且从线性伏安曲线可知，Pt底层分布的TiO2薄膜中有更多的自由空穴存在；这些结果表明：Pt底层分布的TiO2薄膜光生载流子得到有效分离，且光生空穴分布在表层；由于Pt底层分布的TiO2薄膜具有表层空穴富集的趋势，DSSC在光照下，敏化剂产生的电子易于向Pt底层分布的TiO2薄膜转移，表现在短路电流Isc和开路电压Voc的显著增大．     

烧结温度对铜复合电子浆料烧结膜组织和性能的影响

烧结温度和玻璃粉熔点对铜复合电子浆料烧结膜的性能有重要影响。本文选用熔点为430℃的玻璃粉作为复合电子浆料的粘结相,采用四探针测试仪、扫描电镜(SEM)等方法研究了不同烧结温度下导电铜膜的电阻率及其微观结构。结果表明460℃烧结时,玻璃液粘度适中,能完全润湿、包覆铜粉,且铜粉能均匀悬浮在玻璃液中,制得的导电膜平整、致密,导电通道多,因而导电性能较好,同时玻璃液凝固、收缩使膜层与基体之间获得良好的附着力和抗老化性能。     

Fabrication of nanocrystal ink based superstrate-type CuInS₂ thin film solar cells

A CuInS? (CIS) nanocrystal ink was applied to thin film solar cell devices with superstrate-type configuration. Monodispersed CIS nanocrystals were synthesized by a colloidal synthetic route and re-dispersed in toluene to form an ink. A spray method was used to coat CIS films onto conducting glass substrates. Prior to CIS film deposition, TiO? and CdS thin films were also prepared as a blocking layer and a buffer layer, respectively. We found that both a TiO? blocking layer and a CdS buffer layer are necessary to generate photoresponses in superstrate-type devices. The best power conversion efficiency (～1.45%) was achieved by the CIS superstrate-type thin film solar cell device with 200 and 100 nm thick TiO? and CdS films, respectively.     

An electrochemical technique to deposit thin films of PbTe

PbTe thin films were deposited electrochemically on transparent conducting oxide coated (TCO) glass substrates from a solution of lead acetate and TeO₂ at low pH. A lead (Pb) strip was used as a sacrificing anode and the TCO glass acted as the cathode, which were short-circuited externally. Depositions were carried out at different temperatures of the bath to study the growth kinetics and grain growth. X-ray diffraction technique, scanning electron microscopy, infrared spectroscopy and resistivity measurements were carried out to characterize the deposited films. The films were polycrystalline in nature with a cubic phase.     

Formation of semitransparent CuAlSe2 thin films grown on transparent conducting oxide substrates by selenization

Wide band-gap semiconductors have been studied for applications as buffer layers in thin film solar cells and as top cell in tandem devices. CuAlSe₂ (CAS) thin films were deposited onto bare and two different transparent conducting oxide (TCO)-coated glass substrates, In₂O₃:Sn (ITO) and ZnO:Al (AZO), by a two stage process consisting on the selenization of metallic precursor layers. Homogeneous and crystalline formation of CAS thin films is not trivial and it is strongly influenced by selenization conditions, type of substrate and the film thicknesses. Under certain conditions, polycrystalline CuAlSe₂ thin films with chalcopyrite structure and preferential orientation along the (112) plane were obtained onto bare glass susbtrates. However, formation and crystallization of homogeneous CAS thin films was promoted by transparent conducting oxides (ITO and AZO)-coated glass substrates and take place in a wide range of thicknesses and Se amounts with high degree of reproducibility. TCO-coated substrates promoted larger grains when the CAS compound was formed. The band-gap energy, preferential orientation, crystallite size and the average surface roughness varied depending on the film thickness and type of substrate.     

Ink-jet printing of gold conductive tracks

An organic gold precursor was dissolved to form a jet printing ink and deposited using a modified IBM piezoelectric drop-on-demand printer. The substrates were glass slides, glazed tiles and alumina plates. On firing in air, at temperatures below 500 °C, the gold pattern was developed on the substrate by decomposition of the organometallic compound to form tracks that were electrically conducting. The best quality conducting tracks were obtained on glazed tile or glass. The problems that can attend this process have been identified and include spreading and blistering of thick films on pyrolysis and delamination on cooling caused partly by differential thermal contraction. The thickness of the gold was 1.4 m per layer of deposition.     

Au thin films deposited on SnO2:In and glass: Substrate effects on the optical and electrical properties

We report on a detailed study on the optical and electrical properties of Au films made by sputter deposition onto glass substrates with and without transparent and electrically conducting layers of SnO₂:In. The Au films had thicknesses up to 10.7 nm and hence spanned the range for thin film growth from discrete islands, via large scale coalescence and formation of a meandering conducting network, to the formation of a more or less “holey” film. Scanning electron microscopy and atomic force microscopy demonstrated that the SnO₂:In films were considerably rougher than the glass itself, and this roughness influenced the Au film formation so that large scale coalescence set in at a somewhat larger thickness for films on SnO₂:In than on glass. Measurements of spectral optical transmittance and reflectance and of electrical resistance gave a fully consistent picture that could be reconciled with impeded Au film formation on the SnO₂:In layer; this led to pronounced “plateaus” in the near infrared optical spectra for Au films on SnO₂:In and a concomitant change from such two-layer films having a lower resistance than the single gold film at thicknesses below large scale coalescence to the opposite behavior for larger film thicknesses. Our work highlights the importance of the substrate roughness for transparent conductors comprising coinage metal films backed by wide band gap transparent conducting oxides.     

Characteristics of brush plated ZnTe thin films

Zinc telluride thin films were deposited by the brush plating technique at a potential of −0.90 V (SCE) on conducting glass and titanium substrates at different temperatures in the range 30–90°C. The films were polycrystalline in nature with peaks corresponding to the cubic phase. Direct band gap of 2.30 eV was observed. XPS studiers indicated the formation of ZnTe. Depth profiling studies indicated a uniform distribution of Zn and Te throughout the entire thickness. EDAX measurements were made on the films and it was found that there was a slight excess of Te.     

Preparation and characterization of nanostructured ZnO thin films for photoelectrochemical splitting of water

Nanostructured zinc oxide thin films (ZnO) were prepared on conducting glass support (SnO₂: F overlayer) via sol-gel starting from colloidal solution of zinc acetate 2-hydrate in ethanol and 2-methoxy ethanol. Films were obtained by spin coating at 1500 rpm under room conditions (temperature, 28–35°C) and were subsequently sintered in air at three different temperatures (400, 500 and 600°C). The evolution of oxide coatings under thermal treatment was studied by glancing incidence X-ray diffraction and scanning electron microscopy. Average particle size, resistivity and bandgap energy were also determined. Photoelectrochemical properties of thin films and their suitability for splitting of water were investigated. Study suggests that thin films of ZnO, sintered at 600°C are better for photoconversion than the films sintered at 400 or 500°C. Plausible explanations have been provided.