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1.
Next-generation imaging systems require photodetectors with high sensitivity, polarization sensitivity, miniaturization, and integration. By virtue of their intriguing attributes, emerging 2D materials offer innovative avenues to meet these requirements. However, the current performance of 2D photodetectors is still below the requirements for practical application owing to the severe interfacial recombination, the lack of photoconductive gain, and insufficient photocarrier collection. Here, a tunneling dominant imaging photodetector based on WS2/Te heterostructure is reported. This device demonstrates competitive performance, including a remarkable responsivity of 402 A W−1, an outstanding detectivity of 9.28 × 1013 Jones, a fast rise/decay time of 1.7/3.2 ms, and a high photocurrent anisotropic ratio of 2.5. These outstanding performances can be attributed to the type-I band alignment with carrier transmission barriers and photoinduced tunneling mechanism, allowing reduced interfacial trapping effect, effective photoconductive gains, and anisotropic collection of photocarriers. Significantly, the constructed photodetector is successfully integrated into a polarized light imaging system and an ultra-weak light imaging system to illustrate the imaging capability. These results suggest the promising application prospect of the device in future imaging systems.  相似文献   

2.
Solution-processed nanocrystal optoelectronic devices offer large-area coverage, low cost, and compatibility with a wide range of substrates. Recently, photodetectors and photovoltaics based on spin-coated nanoparticle films have shown tremendous progress in performance. However, high-performance devices reported to date have employed either Pb or Cd, raising concerns regarding environmental impact and regulatory acceptance. Herein we report a high-performance solution-processed photodetector based instead on Bi2S3 nanocrystals. The devices exhibit photoconductive gain on the order of 10 combined with temporal response on the 10 ms time scale. The resultant solution-processed Bi2S3 nanorod photoconductive photodetectors are of interest in visible and near-infrared (NIR) wavelength applications requiring video-frame-rate temporal response.  相似文献   

3.
ZnO nanowire UV photodetectors with high internal gain   总被引:2,自引:0,他引:2  
Soci C  Zhang A  Xiang B  Dayeh SA  Aplin DP  Park J  Bao XY  Lo YH  Wang D 《Nano letters》2007,7(4):1003-1009
ZnO nanowire (NW) visible-blind UV photodetectors with internal photoconductive gain as high as G approximately 108 have been fabricated and characterized. The photoconduction mechanism in these devices has been elucidated by means of time-resolved measurements spanning a wide temporal domain, from 10-9 to 102 s, revealing the coexistence of fast (tau approximately 20 ns) and slow (tau approximately 10 s) components of the carrier relaxation dynamics. The extremely high photoconductive gain is attributed to the presence of oxygen-related hole-trap states at the NW surface, which prevents charge-carrier recombination and prolongs the photocarrier lifetime, as evidenced by the sensitivity of the photocurrrent to ambient conditions. Surprisingly, this mechanism appears to be effective even at the shortest time scale investigated of t < 1 ns. Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products (GB) higher than approximately 10 GHz. The high gain and low power consumption of NW photodetectors promise a new generation of phototransistors for applications such as sensing, imaging, and intrachip optical interconnects.  相似文献   

4.
Atomically thin materials such as graphene are uniquely responsive to charge transfer from adjacent materials, making them ideal charge‐transport layers in phototransistor devices. Effective implementation of organic semiconductors as a photoactive layer would open up a multitude of applications in biomimetic circuitry and ultra‐broadband imaging but polycrystalline and amorphous thin films have shown inferior performance compared to inorganic semiconductors. Here, the long‐range order in rubrene single crystals is utilized to engineer organic‐semiconductor–graphene phototransistors surpassing previously reported photogating efficiencies by one order of magnitude. Phototransistors based upon these interfaces are spectrally selective to visible wavelengths and, through photoconductive gain mechanisms, achieve responsivity as large as 107 A W?1 and a detectivity of 9 × 1011 Jones at room temperature. These findings point toward implementing low‐cost, flexible materials for amplified imaging at ultralow light levels.  相似文献   

5.
By fine‐tuning the crystal nucleation and growth process, a low‐temperature‐gradient crystallization method is developed to fabricate high‐quality perovskite CH3NH3PbBr3 single crystals with high carrier mobility of 81 ± 5 cm2 V?1 s?1 (>3 times larger than their thin film counterpart), long carrier lifetime of 899 ± 127 ns (>5 times larger than their thin film counterpart), and ultralow trap state density of 6.2 ± 2.7 × 109 cm?3 (even four orders of magnitude lower than that of single‐crystalline silicon wafers). In fact, they are better than perovskite single crystals reported in prior work: their application in photosensors gives superior detectivity as high as 6 × 1013 Jones, ≈10–100 times better than commercial sensors made of silicon and InGaAs. Meanwhile, the response speed is as fast as 40 µs, ≈3 orders of magnitude faster than their thin film devices. A large‐area (≈1300 mm2) imaging assembly composed of a 729‐pixel sensor array is further designed and constructed, showing excellent imaging capability thanks to its superior quality and uniformity. This opens a new possibility to use the high‐quality perovskite single‐crystal‐based devices for more advanced imaging sensors.  相似文献   

6.
The ultrabroadband spectrum detection from ultraviolet (UV) to long-wavelength infrared (LWIR) is promising for diversified optoelectronic applications of imaging, sensing, and communication. However, the current LWIR-detecting devices suffer from low photoresponsivity, high cost, and cryogenic environment. Herein, a high-performance ultrabroadband photodetector is demonstrated with detecting range from UV to LWIR based on air-stable nonlayered ultrathin Fe3O4 nanosheets synthesized via a space-confined chemical vapor deposition (CVD) method. Ultrahigh photoresponsivity (R) of 561.2 A W−1, external quantum efficiency (EQE) of 6.6 × 103%, and detectivity (D*) of 7.42 × 108 Jones are achieved at the wavelength of 10.6 µm. The multimechanism synergistic effect of photoconductive effect and bolometric effect demonstrates the high sensitivity for light with any light intensities. The outstanding device performance and complementary mixing photoresponse mechanisms open up new potential applications of nonlayered 2D materials for future infrared optoelectronic devices.  相似文献   

7.
Perovskite-based photodetectors exhibit potential applications in communication, neuromorphic chips, and biomedical imaging due to their outstanding photoelectric properties and facile manufacturability. However, few of perovskite-based photodetectors focus on ultraviolet-visible-short-wavelength infrared (UV–Vis–SWIR) broadband photodetection because of the relatively large bandgap. Moreover, such broadband photodetectors with individual nanocrystal channel featuring monolithic integration with functional electronic/optical components have hardly been explored. Herein, an individual monocrystalline MAPbBr3 nanoplate-based photodetector is demonstrated that simultaneously achieves efficient UV–Vis–SWIR detection and fast-response. Nanoplate photodetectors (NPDs) are prepared by assembling single nanoplate on adjacent gold electrodes. NPDs exhibit high external quantum efficiency (EQE) and detectivity of 1200% and 5.37 × 1012 Jones, as well as fast response with rise time of 80 µs. Notably, NPDs simultaneously achieve high EQE and fast response, exceeding most perovskite devices with multi-nanocrystal channel. Benefiting from the high specific surface area of nanoplate with surface-trap-assisted absorption, NPDs achieve high performance in the near-infrared and SWIR spectral region of 850–1450 nm. Unencapsulated devices show outstanding UV-laser-irradiation endurance and decent periodicity and repeatability after 29-day-storage in atmospheric environment. Finally, imaging applications are demonstrated. This work verifies the potential of perovskite-based broadband photodetection, and stimulates the monolithic integration of various perovskite-based devices.  相似文献   

8.
Defect‐induced trap states are essential in determining the performance of semiconductor photodetectors. The de‐trap time of carriers from a deep trap can be prolonged by several orders of magnitude as compared to shallow traps, resulting in additional decay/response time of the device. Here, it is demonstrated that the trap states in 2D ReS2 can be efficiently modulated by defect engineering through molecule decoration. The deep traps that greatly prolong the response time can be mostly filled by protoporphyrin molecules. At the same time, carrier recombination and shallow traps in‐turn play dominant roles in determining the decay time of the device, which can be several orders of magnitude faster than the as‐prepared device. Moreover, the specific detectivity of the device is enhanced (as high as ≈1.89 × 1013 Jones) due to the significant reduction of the dark current through charge transfer between ReS2 and molecules. Defect engineering of trap states therefore provides a solution to achieve photodetectors with both high responsivity and fast response.  相似文献   

9.
Chung K  Rivet CA  Kemp ML  Lu H 《Analytical chemistry》2011,83(18):7044-7052
Stochasticity in gene expression, protein or metabolite levels contributes to cell-cell variations, the analysis of which could lead to a better understanding of cellular processes and drug responses. Current technologies are limited in their throughput, resolution (in space, time, and tracking individual cells instead of population average) and the ability to control cellular environment. A few microfluidic tools have been developed to trap and image cells; however, in most designs available to date, there is a compromise among loading efficiency, speed, the ability to trap single cells, and density or number of trapped cells. To meet the needs of single-cell imaging studies, we developed a microfluidic platform for high-throughput capture and imaging of thousands of single cells. The optimized trapping mechanism enables 95% of the traps to be occupied with single cells, with a trap density of 860 traps/mm(2). The dense array allows up to 800 cells to be imaged simultaneously with a 4x objective and a typical camera setup. Capture occurs with low shear and 94% viability after 24 h. This platform is compatible with other upstream microfluidic components for complex cell stimulation patterns, and we show here the ability to measure heterogeneity in calcium oscillatory behavior in genetically identical cells and monitor kinetic cellular response to chemical stimuli.  相似文献   

10.
2D materials are considered as intriguing building blocks for next‐generation optoelectronic devices. However, their photoresponse performance still needs to be improved for practical applications. Here, ultrasensitive 2D phototransistors are reported employing chemical vapor deposition (CVD)‐grown 2D Bi2O2Se transferred onto silicon substrates with a noncorrosive transfer method. The as‐transferred Bi2O2Se preserves high quality in contrast to the serious quality degradation in hydrofluoric‐acid‐assisted transfer. The phototransistors show a responsivity of 3.5 × 104 A W?1, a photoconductive gain of more than 104, and a time response in the order of sub‐millisecond. With back gating of the silicon substrate, the dark current can be reduced to several pA. This yields an ultrahigh sensitivity with a specific detectivity of 9.0 × 1013 Jones, which is one of the highest values among 2D material photodetectors and two orders of magnitude higher than that of other CVD‐grown 2D materials. The high performance of the phototransistor shown here together with the developed unique transfer technique are promising for the development of novel 2D‐material‐based optoelectronic applications as well as integrating with state‐of‐the‐art silicon photonic and electronic technologies.  相似文献   

11.
Organolead trihalide perovskites have attracted significant attention for optoelectronic applications due to their excellent physical properties in the past decade. Generally, both grain boundaries in perovskite films and the device structure play key roles in determining the device performance, especially for horizontal‐structured device. Here, the first optimized vertical‐structured photodetector with the perovskite single crystal MAPbBr3 as the light absorber and graphene as the transport layer is shown. The hybrid device combines strong photoabsorption characteristics of perovskite and high carrier mobility of flexible graphene, exhibits excellent photoresponse performance with high photoresponsivity (≈1017.1 A W?1) and high photodetectivity (≈2.02 × 1013 Jones) in a low light intensity (0.66 mW cm?2) under the actuations of 3 V bias and laser irradiation at 532 nm. In particular, an ultrahigh photoconductive gain of ≈2.37 × 103 is attained because of fast charge transfer in the graphene and large recombination lifetime in the perovskite single crystal. The vertical architecture combining perovskite crystal with highly conductive graphene offers opportunities to fulfill the synergistic effect of perovskite and 2D materials, is thus promising for developing high‐performance electronic and optoelectronic devices.  相似文献   

12.
Control over the morphology and crystallinity of metal halide perovskite materials is of key importance to enable high-performance optoelectronics. Here, a simple yet effective template-free self-assembly synthesis of perovskite granular wires with ultrahigh photodetectivity (3.17 × 1015 Jones) is reported. The 1D self-assembly of perovskite grains is driven by differences in the surface interaction energies of the granular facets. The superb photodetecting performance originates from extremely low dark current engendered by energetic barriers featuring unique band-edge modulation along the long axis of wire. Flexible photodetector arrays, fabricated by selectively placing perovskite granular wires onto pre-patterned electrode arrays on a transparent polymer substrate, show independently addressable photonic signal mapping with remarkably high detectivity, photoconductive gain, and responsivity. The “self-assembled nanograin engineering” strategy developed in this study provides a viable method for the development of high-performance perovskite photodetectors and can be extended to other integrated optoelectronic systems.  相似文献   

13.
We report on the photocurrent behavior of single GaN n-i-n nanowires (NWs) grown by plasma-assisted molecular-beam epitaxy on Si(111). These structures present a photoconductive gain in the range of 10(5)-10(8) and an ultraviolet (350 nm) to visible (450 nm) responsivity ratio larger than 6 orders of magnitude. Polarized light couples with the NW geometry with a maximum photoresponse for polarization along the NW axis. The photocurrent scales sublinearly with optical power, following a I ~ P(β) law (β < 1) in the measured range with β increasing with the measuring frequency. The photocurrent time response remains in the millisecond range, which is in contrast to the persistent (hours) photoconductivity effects observed in two-dimensional photoconductors. The photocurrent is independent of the measuring atmosphere, either in the air or in vacuum. Results are interpreted taking into account the effect of surface states and the total depletion of the NW intrinsic region.  相似文献   

14.
Photodetectors with high photoelectronic gain generally require a high negative working voltage and a very low environment temperature. They also exhibit low response speed and narrow linear dynamic range (LDR). Here, an organic photodiode is demonstrated, which shows a large amount of photon to electron multiplication at room temperature with highest external quantum efficiency (EQE) from ultraviolet (UV) to near‐infrared region of 5.02 × 103% (29.55 A W?1) under a very low positive voltage of 1.0 V, accompanied with a fast response speed and a high LDR from 10?7 to 101 mW cm?2. At a relatively high positive bias of 10 V, the EQE is up to 1.59 × 105% (936.05 A W?1). Inversely, no gain is found at negative bias. The gain behavior is exactly similar to a bipolar phototransistor, which is attributed to the photoinduced release of accumulated carriers. The devices at a low voltage exhibit a normalized detectivity (D *) over 1014 Jones by actual measurements, which is about two or three order of magnitudes higher than that of the highest existing photodetectors. These pave a new way for realization of high sensitive detectors with fast response toward the single photon detection.  相似文献   

15.
Hybrid graphene-quantum dot phototransistors with ultrahigh gain   总被引:1,自引:0,他引:1  
Graphene is an attractive material for optoelectronics and photodetection applications because it offers a broad spectral bandwidth and fast response times. However, weak light absorption and the absence of a gain mechanism that can generate multiple charge carriers from one incident photon have limited the responsivity of graphene-based photodetectors to ~10(-2)?A?W(-1). Here, we demonstrate a gain of ~10(8) electrons per photon and a responsivity of ~10(7)?A?W(-1) in a hybrid photodetector that consists of monolayer or bilayer graphene covered with a thin film of colloidal quantum dots. Strong and tunable light absorption in the quantum-dot layer creates electric charges that are transferred to the graphene, where they recirculate many times due to the high charge mobility of graphene and long trapped-charge lifetimes in the quantum-dot layer. The device, with a specific detectivity of 7?×?10(13) Jones, benefits from gate-tunable sensitivity and speed, spectral selectivity from the short-wavelength infrared to the visible, and compatibility with current circuit technologies.  相似文献   

16.
Using a reflection-based pulsed THz imaging system built upon our ErAs:GaAs photoconductive switch and a gated receiver, we quantify image quality at different detection bands (centered at 100, 400, and 600 GHz). Zero-bias Schottky diode detectors mounted in various waveguide sizes are used to tune the operational frequency bands of the imaging system, while the rest of the imaging system remains unchanged. The image quality is quantified by applying an optical character recognition (OCR) algorithm on THz images of 8-by-10 mm copper letters on a fiberglass substrate. Using the OCR success rate as a metric, we see a fivefold improvement in image quality from a 400 GHz to a 600 GHz imaging system, while our 100 GHz images do not produce any correct OCR results. In a comparison experiment performed at 600 GHz, the image signal-to-noise ratio (SNR) is degraded by placing increasing numbers of denim sheets (5.4 dB decrease in signal per layer) into the beam path. We find that the OCR success rate is roughly constant from one sheet to four sheets of denim (33–25 dB SNR) and then drops off sharply starting at five denim sheets.   相似文献   

17.
Ternary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features,which opens up new potential for device applications.Here,visible–near-infrared and self-powered phototransistors based on spatially bandgap-graded MoS2(1−x)Se2x alloys,synthesized by a simple and controllable chemical solution deposition method,are reported.The graded bandgaps,arising from the spatial grading of Se composition and thickness within a single domain,are tuned from 1.83 to 1.73 eV,leading to the formation of a homojunction with a builtin electric field.Consequently,a strong and sensitive gate-modulated photovoltaic effect is demonstrated,enabling the homojunction phototransistors at zero bias to deliver a photoresponsivity of 311 mA W−1,a specific detectivity up to^10^11 Jones,and an on/off ratio up to^10^4.Remarkably,when illuminated by the lights ranging from 405 to 808 nm,the biased devices yield a champion photoresponsivity of 191.5 A W−1,a specific detectivity up to^1012 Jones,a photoconductive gain of 10^6–10^7,and a photoresponsive time in the order of^50 ms.These results provide a simple and competitive solution to the bandgap engineering of two-dimensional materials for device applications without the need for p–n junctions.  相似文献   

18.
2D halide semiconductors, a new family of 2D materials in addition to transition metal dichalcogenides, present ultralow dark current and high light conversion yield, which hold great potential in photoconductive detectors. Herein, a facile aqueous solution method is developed for the preparation of large‐scale 2D lead dihalide nanosheets (PbF2‐xIx). High‐performance UV photodetectors are successfully implemented based on 2D PbF2‐xIx nanosheets. By modulating the components of halogens, the bandgap of PbF2‐xIx nanosheets can be tuned to meet varied detection spectra. The photoresponse dependence on incident power density, wavelength, detection environment, and temperature are systematically studied to investigate their detection mechanism. For PbI2 photodetectors, they are dominantly driven by a photoconduction mechanism and show a fast response speed and a low noise current density. A high normalized detectivity of 1.5 × 1012 Jones and an ION/IOFF ratio up to 103 are reached. On the other hand, PbFI photodetectors demonstrate a photogating mechanism mediated by trap states showing high responsivity. The novel 2D halide materials with wide bandgaps, superior detection performance, and facile synthesis process can enrich the Van der Waals solids family and hold great potential for a wide variety of applications in advanced optoelectronics.  相似文献   

19.
Strong light absorption, coupled with moderate carrier transport properties, makes 2D layered transition metal dichalcogenide semiconductors promising candidates for low intensity photodetection applications. However, the performance of these devices is severely bottlenecked by slow response with persistent photocurrent due to long lived charge trapping, and nonreliable characteristics due to undesirable ambience and substrate effects. Here ultrahigh specific detectivity (D*) of 3.2 × 1014 Jones and responsivity (R) of 5.77 × 104 A W?1 are demonstrated at an optical power density (Pop) of 0.26 W m?2 and external bias (Vext) of ?0.5 V in an indium tin oxide/MoS2/copper oxide/Au vertical multi‐heterojunction photodetector exhibiting small carrier transit time. The active MoS2 layer being encapsulated by carrier collection layers allows us to achieve repeatable characteristics over large number of cycles with negligible trap assisted persistent photocurrent. A large D* > 1014 Jones at zero external bias is also achieved due to the built‐in field of the asymmetric photodetector. Benchmarking the performance against existing reports in literature shows a viable pathway for achieving reliable and highly sensitive photodetectors for ultralow intensity photodetection applications.  相似文献   

20.
We have investigated the role of the trapping process in degradation mechanisms of poly(9,9-dihexylfluorene-co-N,N-di(9,9-dihexyl-2-fluorenyl)-N-phenylamine) (PF) based diodes, after aging (at half lifetime) by electrical stress. By using the Charge based Deep Level Transient Spectroscopy, we have determined the trap parameters in PF light emitting devices. The mean activation energies of the traps are in the range 0.13–0.60 eV from the band edges with capture cross sections of the order of 10–18 to 10–20 cm2. The trap densities are in the range of 10–16 to 10–17 cm?3. Upon aging, no new trap levels have been found indicating that the electrical stress did not create additional defect level in the polymer in contrast to previous investigations on other organic materials, which reported that the degradation of devices in humid atmosphere lead to the onset of new traps acting as recombination centers. Furthermore, aging would not affect uniformly the defect levels in the polymer. Shallow trap states (below 0.3 eV) remain stable, whereas the enhancement in trap density of deeper trap levels (above 0.3 eV) have been observed, suggesting that degradation by electrical stress leads to an increase in density of deep levels.  相似文献   

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