Preparation and dielectric properties of Si3N4/SiCw composite ceramic

Gelcasting was employed to fabricate Si₃N₄/SiC whisker (SiCw) composite ceramics, and the effects of heat-treatment temperature on the length-to-diameter ratio of the whiskers and SiCw content on microwave dielectric properties were studied. Compared with pure SiCw of spherical structure obtained at temperature of 1,750 °C(Ar), pure SiCw treated at 1,600 °C(Ar) showed rod-like structure, higher dielectric properties and more evenly distribution in Si₃N₄/SiCw composite ceramics. Both the real (ε′) and imaginary (ε″) permittivity of Si₃N₄/SiC whisker (SiCw) composite ceramics decreased with increasing frequency and increased as the whisker content raised owing to the interface and SiCw playing a role of dipole in the frequency range of 8.2–12.4 GHz. In addition, comparing the ceramics with lower content of SiCw, the reflectivity of the composite ceramics moved to a lower frequency; the maximum absorption peak reached ?22.4 dB at the whisker content of 15 wt%.     

BaTiO3/SrTiO3多层膜的制备及其介电性质

采用脉冲激光沉积法在Pt／Ti／SiO2／Si衬底上制备了BaTiO3／SrTiO3(BTO／STO)多层膜。XRD结果表明：多层膜呈现出明显的(110)择优取向,与Ba0.5Sr0．5TiO3单层膜相比,多层膜的相对介电常数得到了明显的增强,而介电损耗仍然保持在较低的水平。室温下频率为10kHz时,BTO／STO(n=6)多层膜的相对介电常数为506,而介电损耗仅为0．033。薄膜的C-V特性研究表明：多层膜呈现出较好的电容调谐度。     

Structural and dielectric properties of parylene-VT4 thin films

58% semi-crystalline thin parylene-VT4 (–H₂C–C₆F₄–CH₂−)_n films, have been investigated by dielectric spectroscopy for temperature and frequency ranges of [−120 to 380 °C] and [0.1–10⁵ Hz] respectively. The study comprises a detailed investigation of the dielectric constant, dielectric loss and AC conductivity of this fluoropolymer. Dielectric behavior of parylene-VT4 is represented by a low dielectric constant with values in the range of 2.05–2.35 while the dielectric losses indicate the presence of two relaxation processes. Maxwell−Wagner−Sillars (MWS) polarization at the amorphous/crystalline interfaces with activation energy of 1.6 eV is due to the oligomer orientation. Electrical conductivity obeys to the well-known Jonscher law. The plateau in the low frequency part of this conductivity is temperature-dependent and follows an Arrhenius behavior with activation energy of 1.17 eV (deep traps) due to the fluorine diffusion. Due to its thermal stability with a high decomposition temperature (around 400 °C under air and 510 °C under nitrogen) and due to its good resistivity at low frequency (10¹⁵–10¹⁷ Ω m⁻¹), parylene-VT4 constitutes a very attractive polymer for microelectronic applications as low k dielectric. Moreover, when parylene-VT4 is subjected to an annealing, the dielectric properties can be still more improved.     

A resonant method for determining mechanical properties of Si3N4 and SiO2 thin films

This study investigates the measurement of Poisson's ratio and Young's modulus of silicon dioxide (SiO₂) and silicon nitride (Si₃N₄) thin films using a resonant method. Two thin films, which are SiO₂ and Si₃N₄, are fabricated as the specimens of microcantilever beams and plates using the bulk micromachining. The resonant frequency of the cantilever beams and plates is measured using a laser interferometer. The Young's modulus of thin films can be calculated from the resonant frequency of the cantilever beams, and the Poisson's ratio of thin films is determined by the frequency of the cantilever plates. Experimental results show that the Poisson's ratios of SiO₂ and Si₃N₄ are 0.16 and 0.26, respectively, and the Young's moduli of SiO₂ and Si₃N₄ are, respectively, 55.6 GPa and 131.6 GPa.     

STO/YBCO薄膜的制备及介电性能研究

采用脉冲激光沉积技术,在(100)LaAlO3单晶基片上生长SrTiO3/Y1Ba2Cu3O7-x(STO/YBCO)多层薄膜。XRD分析表明:YBCO薄膜和STO薄膜均为C轴取向,STO(002)/YBCO(006)衍射峰摇摆曲线半高宽为0.73°。AFM分析表明,STO/YBCO多层薄膜表面平整、均匀,在77K,100kHz的测试条件下,STO薄膜介电损耗tgδ<10-2,在53.6kV/cm电场作用下,介电常数的相对变化为38%。     

氮化硅膜材料的技术应用与分析

叙述氮化硅薄膜的制备工艺、敏感机理;描述氮化硅,硅离子敏感半导体电极的结构布置、技术参数和试制过程,在氮化硅膜上增加了一层化学敏感及选择性较好的PVC(聚乙烯)薄膜;考察了电极对离子的选择性和灵敏度的影响,并通过对离子浓度的测试,对研发过程中的一些问题进行了分析探讨;结果表明该电极对钾和氨等其它离子的选择性有所提高,响应时间缩短,敏感特性的线性范围增大;为离子选择电极的选择和开发,提供了新的途径.     

Nitrogen activation for plasma chemical synthesis of thin Si3N4 films

In this paper we summarize a study of the reactions of plasma-activated nitrogen with silane and NO admixture during the plasma-enhanced chemical vapour deposition (PECVD) of Si₃N₄ films outside the plasma region. The dominant role of nitrogen atoms, mainly in the ground (⁴S) state, was demonstrated experimentally. Probable chemical processes in the PECVD zone are discussed.     

N含量对CNx薄膜结构和介电性能的影响

利用双放电腔微波ECR等离子体增强非平衡磁控溅射(MW-ECR PEUMS)系统,在室温下制备CNx薄膜.通过傅立叶变换红外光谱、X光电子能谱表征技术以及椭偏仪测试手段,研究了N含量对CNx薄膜结构和介电性能的影响.研究结果表明,随着CNx薄膜N/C比的增大,sp3 C-N的形成受到抑制,sp2 C-N的形成增多,薄膜折射率以及介电常数电子极化贡献部分降低.     

Preparation and some properties of chemically vapour-deposited Si3N4-TiN composite

Chemically vapour-deposited (CVD) Si₃N₄-TiN composite (a plate with the maximum thickness of 1.9 mm) has been prepared on a graphite substrate using a mixture of SiCl₄, TiCl₄, NH₃ and H₂ gases. The CVD was carried out at deposition temperatures,T _dep, in the range of 1050 to 1450 ° C, total gas pressures,P _tot, from 1.33 to 10.7 kPa and gas flow rates of 136 (SiCl₄), 18 (TiCl₄), 120 (NH₃) and 2720 (H₂) cm³ min^–1. The deposits thus obtained appeared black. The Ti content in the composites ranged from 2.1 to 24.8 wt % and was found in the form of Tin. The structure of the Si₃N₄ matrices varied from amorphous (initially) to the- and-type, with increasingT _dep. Most of the- and-type deposits had a preferred orientation (001) parallel to the deposition surface. While the deposition surface of the amorphous deposits showed a pebble structure, the surfaces of the- and-type deposits were composed of various kinds of facets. The heat-treating experiment suggested that-Si₃N₄ obtained in the present work was formed directly via a vapour phase, and not from crystallization of amorphous Si₃N₄ or from transformation of-Si₃N₄.     

Preparation of high dielectric constant thin films of CaCu3Ti4O12 by sol-gel

Preparation of sol-gel derived CaCu₃Ti₄O₁₂ (CCTO) thin films using two different sols and their characterization including their dielectric response are reported. The properties of CCTO films depend heavily on solvents used to prepare the sols. Dielectric constant as high as ∼900 at 100 kHz could be obtained when acetic acid was used to prepare the sol; in contrast, use of hexanoic acid in the sol yielded films with a much lower dielectric constant. The variation in grain and grain boundary conductivities with temperature has been measured. Activation energies of 0.08 eV and 0.68 eV have been found for grain and grain boundary conduction, respectively.     

Analysis of defect formation in Si3N4 films

The formation of Frenkel defects in silicon nitride films is analyzed in the quasi-chemical approach by solving the system of equations describing defect formation in Si₃N₄ films at different electroneutrality conditions. The concentrations of various defects species are calculated as a function of equilibrium nitrogen pressure.     

Broadband antireflection properties of thin heterogeneous dielectric films

New exactly solvable flexible models of inhomogeneous thin film with smooth and deep variations of dielectric susceptibility epsilon(z) are presented. Formation of cutoff frequencies of such films (as well as the broadband antireflection), controlled by the profiles epsilon(z), is shown. The crucial role of gradients of epsilon(z) in the optics of strongly inhomogeneous media is emphasized.     

Preparation and properties of Si3N4/PS composites used for electronic packaging

A kind of polymer composite was fabricated using polystyrene as the matrix and Si₃N₄ powder as filler employing the method of heat press molding. Microstructure, thermal conductivity and dielectric constant of the Si₃N₄ filled composite were evaluated. The effect of the volume fraction of Si₃N₄, the particle size of the polystyrene matrix and the silane treatment of Si₃N₄ filler on the thermal conductivity of the composite was investigated; dielectric constant of the composite was evaluated. The main factors that affect the thermal conductivity of the composite were confirmed through theoretical analyzing of the experimental data and the thermal conductivity model. Experimental results show that with the filler content increasing, a thermally conductive network is formed in the composites, thus the thermal conductivity of the composite increases rapidly. The composites experience a highest thermal conductivity of 3.0 W/m K when the volume fraction of the filler reaches 40%. The increasing of thermal conductivity is dominated by the ease of forming a thermal conductive network. A larger polystyrene particle size, a higher Si₃N₄ filler content and the silane treatment of the filler have a beneficial effect on improving the thermal conductivity. The dielectric constant increases with the content of Si₃N₄ filler, however, it remains at a relatively low lever (<4, at 1 MHz).     

Low-rate sputter-deposited Fe3Si thin films on Si substrates: structural and ferromagnetic properties

Fe3Si thin films were sputter-deposited on Si(001) substrates. Structural investigations show that Fe3Si was deposited poly-crystalline with a Si-containing layer at the Fe3Si/Si interface. The formation of the layer was attributed to the influence of low deposition rates used in this study on the grain nucleation in Fe3Si. This layer helps to stabilize the ferromagnetic properties of the subsequent annealed films at 350 degrees C with 5 Oe obtained for coercive field H(c), approximately 920 emu/cm3 for saturation magnetization M(s) and approximately 0.9M(s) for remnant magnetization M(r).     

Magnetodielectric and dielectric properties of orthorhombic HoMnO3 thin films

Sandwich-structural multilayer films Au/HoMnO₃/YBa₂Cu₃O_7 − δ were prepared epitaxially on SrTiO₃ (001) single crystal substrates by using pulsed laser deposition technique. The HoMnO₃ films crystallized in a metastable orthorhombic structure and the Au and YBa₂Cu₃O_7 − δ were used as electrodes to investigate the dielectric and magnetodielectric properties of HoMnO₃ films. The impedance and electric modulus spectroscopic plots were used to discern the intrinsic characteristics of HoMnO₃ films or unwanted interface effects. The low-temperature (~ 2 K) dependence of the dielectric constant of HoMnO₃ films as function of frequency shows anomalies around 43 K and 22 K, which is corresponding to the Néel temperature and lock-in transition of Mn³⁺ moments, respectively. The magnetodielectric effects of HoMnO₃ films were investigated at 100 kHz under a 2T applied magnetic field, and the dielectric constant was tuned resulting in a decrease of 3%. The results indicate the strong coupling between the dielectric properties and magnetic orders in orthorhombic HoMnO₃ films.     

Dielectric properties of chemically vapour-deposited Si3N4

The dielectric properties of chemically vapour-deposited (CVD) amorphous and crystalline Si₃N₄ were measured in the temperature range from room temperature to 800° C. The a.c. conductivity ( _a.c.) of the amorphous CVD-Si₃N₄ was found to be less than that of the crystalline CVD-Si₃N₄ below 500° C, but became greater than that of the crystalline CVD-Si₃N₄ over 500° C due to the contribution of d.c. conductivity ( _d.c.). The measured loss factor () and dielectric constant () of the amorphous CVD-Si₃N₄ are smaller than those of the crystalline CVD-Si₃N₄ in all of the temperature and frequency ranges examined. The relationships of ^n-1, (- ) ^n-1 and/(- ) = cot (n/2) (were observed for the amorphous and crystalline specimens, where is angular frequency andn is a constant. The values ofn of amorphous and crystalline CVD-Si₃N₄ were 0.8 to 0.9 and 0.6 to 0.8, respectively. These results may indicate that the a.c. conduction observed for both of the above specimens is caused by hopping carriers. The values of loss tangent (tan) increased with increasing temperature. The relationship of log (tan) T was observed. The value of tan for the amorphous CVD-Si₃N₄ was smaller than that of the crystalline CVD-Si₃N₄.