溶胶-凝胶法制备ZnO薄膜及其性能研究

使用溶胶-凝胶法在P型Si(100)衬底上成功地制备了具有c轴择优取向性和高可见光透射率的多晶ZnO薄膜.通过XRD、SEM以及PL光谱等分析,表明:所制备的是结晶良好的ZnO薄膜,表面均匀致密,薄膜晶粒尺寸大约在15～60 nm,颗粒平均直径大约为38nm.由透射谱可知,制备的ZnO薄膜在可见光区域内薄膜的平均透射率在85%以上;由光致发光谱可知,室温下可观察到显著的紫外光发射,说明具有较好的光学性质.     

溶胶-凝胶法生长(002)高度择优取向的ZnO:Al薄膜

采用溶胶-凝胶法在石英衬底上制备了高度择优取向的ZnO:Al薄膜.用X射线衍射(XRD)、扫描电子显微镜(SEM)分别对薄膜结构和形貌进行了表征,用紫外-可见透射光谱和四探针研究了薄膜的光电性能.结果表明:制备的ZnO:Al薄膜为六角纤锌矿结构,且具有明显的c轴择优取向;Al离子的掺杂浓度和退火温度对薄膜的结构、光电性能有一定的影响,薄膜在可见光区的光透过率为80%～95%;Al的掺杂浓度为1%样品在600℃下空气中退火1h后,薄膜最低的电阻率为7.5×10-2Ω·cm.     

溶胶-凝胶法生长（002）高度择优取向的ZnO∶Al薄膜

采用溶胶-凝胶法在石英衬底上制备了高度择优取向的ZnO∶Al薄膜。用X射线衍射（XRD）、扫描电子显微镜（SEM）分别对薄膜结构和形貌进行了表征,用紫外-可见透射光谱和四探针研究了薄膜的光电性能。结果表明：制备的ZnO∶Al薄膜为六角纤锌矿结构,且具有明显的c轴择优取向;Al离子的掺杂浓度和退火温度对薄膜的结构、光电性能有一定的影响,薄膜在可见光区的光透过率为80%~95%;Al的掺杂浓度为1%样品在600℃下空气中退火1h后,薄膜最低的电阻率为7.5×10-2Ω.cm。     

溶胶-凝胶法制备ZnO薄膜及其表征

用溶胶-凝胶法在普通玻璃表面制备了ZnO薄膜,并通过XRD、SEM、UV—VIS、DSC—TGA等测试手段对ZnO薄膜进行了表征。研究表明：溶胶-凝胶法制备的ZnO薄膜透明,薄膜表面均匀分布着片状ZnO晶粒;随着退火温度的升高,ZnO晶粒在17～30nm范围内逐渐增大。     

溶胶-凝胶法与磁控溅射法制备ZnO薄膜性能对比研究

分别采用溶胶-凝胶(Sol-gel)法和射频(RF)反应磁控溅射法在普通玻璃片上制备出ZnO薄膜,利用X射线衍射、扫描电子显微镜、分光光度计、台阶仪等检测手段分别对其进行了分析比较.结果表明:相同基底和退火温度下,RF磁控溅射法制备的ZnO薄膜具有更优异的晶化质量;在波长390～850nm范围内的透射率都在80%以上,薄膜的吸收长波限值分别约为375nm和390nm,计算出其禁带宽度分别为3.31eV和3.18eV.     

溶胶-凝胶法制备ZnO薄膜及其光催化性能

用溶胶-凝胶法在普通玻璃表面制备了薄膜型ZnO光催化剂,通过XRD、Ab2d、UV-VIS等测试技术对ZnO薄膜进行了表征;以偶氮胭脂红为降解物,考察了薄膜退火温度、镀膜层数、溶液初始质量浓度和反应体系初始pH值对ZnO薄膜光催化性能的影响,并进行了相关机理的探讨．研究表明：溶胶-凝胶法制备的ZnO薄膜呈透明状,薄膜表面均匀分布着球形ZnO晶粒;随着退火温度的升高,ZnO晶粒在17～30mm范围内逐渐增大．光催化实验中ZnO薄膜光催化降解偶氮胭脂红的最佳工艺条件是：退火温度为300℃,镀膜层数为5层,溶液初始pH值为8～9．     

溶胶-凝胶法与射频磁控溅射法制备ZnO薄膜及其表征对比

分别对溶胶-凝胶法和磁控溅射法制备ZnO进行了详细的介绍,并借助X射线衍射、原子力显微镜、拉曼光谱分析、紫外吸收等检测手段对这两种方法生长的薄膜进行了分析比较.分析显示:相同石英基底,相同退火温度下生长ZnO薄膜,磁控溅射法生长的ZnO薄膜要比溶胶-凝胶法生长的ZnO薄膜有更优异的c轴取向特性,生长的薄膜结晶更加均匀、致密.     

溶胶-凝胶提拉法制备ZnO薄膜及其性能研究

采用溶胶-凝胶提拉法在石英玻璃衬底上生长了ZnO薄膜.对薄膜的XRD分析表明ZnO薄膜为纤锌矿结构并沿c轴择优取向生长.透射光谱表明薄膜的禁带宽度为3.28eV,与ZnO体材料的禁带宽度3.30eV基本相同.用荧光光谱分析了经过400～600℃热处理获得的ZnO薄膜,结果表明ZnO薄膜在室温下可获得较强的紫外带边发射.适当选择热处理温度可以获得无可见波段发射的ZnO薄膜.     

反应沉积法制备c轴取向ZnO薄膜及表征

以二水合醋酸Zn为原料，采用反应沉积方法在非晶玻璃衬底上制备出了高度c轴取向、结晶良好的ZnO薄膜。研究了不同衬底温度和Zn源温度和ZnO薄膜性质的影响，探讨了不同衬底温度和Zn源温度下生长ZnO薄膜的最佳参数。本还讨论了该方法制备ZnO薄膜的沉积机制及优化条件下样品的透光特性。     

多晶纳米ZnO薄膜的溶胶-凝胶法制备及光催化性能研究

在石英玻璃衬底上用溶胶-凝胶法制备了纳米级的多晶ZnO薄膜,通过XRD、AFM和UV-Vis吸收光谱对薄膜进行了表征;以苯酚作为被降解的物质,研究了退火温度、降解温度、苯酚溶液的初始浓度和空气流量对ZnO薄膜光催化降解苯酚性能的影响,以及其光催化活性的失活与恢复.实验结果证明,溶胶-凝胶法制备的纳米级ZnO薄膜光催化效果显著,并且可以再生.     

退火温度对sol-gel制备的ZnO薄膜的结构影响

采用sol-gel旋涂法在抛光硅〈111〉晶面生长了高度C轴取向的ZnO薄膜。DSC以及XRD测试结果显示此溶胶系统的最佳退火温度为450℃左右,更高的退火温度将对薄膜的择优取向产生不利的影响。SEM显示薄膜表面致密、均匀、光滑,组成薄膜的颗粒尺寸在50～100nm,并显示出良好的C轴择优取向。     

Preparation and properties of ZnO thin films deposited by sol-gel technique

Zinc oxide (ZnO) thin films were deposited on (100) Si substrates by sol-gel technique. Zinc acetate was used as the precursor material. The effect of different annealing atmospheres and annealing temperatures on composition, structural and optical properties of ZnO thin films was investigated by using Fourier transform infrared spectroscopy, X-ray diffraction, atomic force microscopy and photoluminescence (PL), respectively. At an annealing temperature of 400°C in N₂ for 2 h, dried gel films were propitious to undergo structural relaxation and grow ZnO grains. ZnO thin film annealed at 400°C in N₂ for 2 h exhibited the optimal structure and PL property, and the grain size and the lattice constants of the film were calculated (41.6 nm, a = 3.253 ? and c = 5.210 ?). Moreover, a green emission around 495 nm was observed in the PL spectra owing to the oxygen vacancies located at the surface of ZnO grains. With increasing annealing temperature, both the amount of the grown ZnO and the specific surface area of the grains decrease, which jointly weaken the green emission. Translated from Journal of Lanzhou University (Natural Science), 2006, 42(1): 67–71 [译自: 兰州大学学报 (自然科学版)]     

Transparent conducting zinc oxide thin film prepared by off-axis rf magnetron sputtering

Highly conducting and transparent ZnO : Al thin films were grown by off-axis rf magnetron sputtering on amorphous silica substrates without any post-deposition annealing. The electrical and optical properties of the films deposited at various substrate temperatures and target to substrate distances were investigated in detail. Optimized ZnO : Al films have conductivity of 2200 S cm^-1 and average transmission in the visible range is higher than 85%. The conductivity and mobility show very little temperature dependence.     

溶剂体系对c轴择优取向ZnO薄膜结构和光学性质的影响

以无水乙醇、乙二醇甲醚、乙二醇甲醚/乙醇混合溶液(1∶1)为溶剂体系,采用溶胶-凝胶法制备了ZnO透明薄膜,并利用场发射扫描电镜、X射线衍射和反射光谱仪等研究了溶剂体系对薄膜组成、结构和光学性能的影响。结果表明,3种溶剂所制备的ZnO薄膜均为六方纤锌矿型结构,具有c轴择优取向;以乙二醇单甲醚/乙醇混合溶液(1∶1)为溶剂制备的ZnO薄膜平整、致密,在可见光区域透光率达到90%左右,禁带宽度为3.25eV,具备制作薄膜太阳能电池透明导电电极材料的应用价值。     

Boron-doped zinc oxide thin films prepared by sol-gel technique

Multilayer transparent conducting boron-doped zinc oxide films have been prepared on glass substrates by the sol gel dip coating process. Zinc acetate solutions of 0.4 M in isopropanol stabilized by diethanolamine and doped with boron tri-i-propoxide were used. Each layer was fired at 400–650^∘C in a conventional furnace for 30 min. Selected samples were vacuum annealed at 400–450^∘C for 1 h to improve their electrical properties. The electrical resistivity curve with doping shows a minimum around 0.8 at.%. Excess boron caused a drop of the carrier mobility without acting as donors. Post-deposition annealing sequence was crucial for dopant partial regeneration. Films with an average optical transmittance exceeding 90% can be achieved reproducibly.     

热处理对溶胶凝胶MoO3薄膜特性的影响

报道了以钼粉为原料,采用溶胶凝胶技术和旋转镀膜方法,制备MoO3纳米薄膜。采用TG-DSC分析、X射线衍射仪(XRD)、原子力显微镜(AFM)、红外光谱仪等方法分析了薄膜的特性。研究结果表明MoO3薄膜具有纳米颗粒结构,热处理使得MoO3颗粒长大,且表面平整度降低;XRD分析显示,250℃热处理的MoO3粉末已结晶(为α-MoO3),且沿(Ok0)方向取向强烈;随热处理温度的升高,MoO3微结构发生了相应的变化,Mo——O（2）、Mo——O（3）键振动吸收增强,且峰位移动。这些变化归因于热处理导致的MoO3颗粒形状、团聚状态的变化以及应变键的产生。     

Surface and photocatalytic properties of ZnO thin film prepared by sol-gel method

ZnO films were prepared on glass substrates by a sol-gel dip-coating technique. The films showed a polycrystalline phase without any preferable orientation. By decreasing the withdrawal speed, the surface of the ZnO films became denser because of a decrease in particle sizes. This reduces the distance between the supported solids under the water droplet that could increase the degree of the pinning effects, and leads to increase the water contact angle. Furthermore, these prepared ZnO films showed photocatalytic properties indicating by photocatalytic degradation of methylene blue under a blacklight illumination. By increasing the calcination temperature, the water contact angle value decreases due to the grain coalescence which increases the gap between these supported solids. On the other hand, this enhances the photocatalytic activity caused by the improving of the crystallinity and the surface roughness of ZnO thin films with an increase in calcination temperature.     

改进sol-gel技术BST薄膜的制备及性能研究

为了制备高性能BST薄膜,采用改进的溶胶 凝胶(sol gel)方法在Pt/Ti/SiO2/Si基片上制备出了不同结构、不同组成的BST薄膜;研究了BST薄膜的微观结构及其介电、铁电性能。XRD分析表明,当热处理温度为750℃时,得到完整钙钛矿结构的薄膜材料。SEM电镜显示,含种子层的Ⅱ、Ⅲ、Ⅳ3种不同类型的BST薄膜的结晶状况有很大改善。得到的BST20薄膜的介电峰温区覆盖常温段,介电常数为405,介电损耗为0.011,剩余极化强度为Pr=2.3μC·cm-2,矫顽场为Ec=45kV/cm。