共查询到19条相似文献,搜索用时 93 毫秒
1.
本文阐述了半导体器件模拟中的有限元三角网格误差分析的基本原理,在分析比较了几种误差估计方法之后,选择了一种比较优秀的方法作为自适应网格生成的误差指示器。 相似文献
2.
3.
4.
基于传统的风扇设计方法,提出了风扇参数化设计和流场分析程序.采用VB开发了CPU轴流风扇空气动力设计软件和风扇参数化设计模拟软件,使用者只需输入风扇的基本结构参数,便可由程序自动生成高质量的六面体网格,能自动进行批处理模拟和结果后处理.最后采用该软件快速对风扇的结构参数进行性能分析,加深了CPU风扇各主要技术参数在风扇整体性能中影响程度的认识,为进一步的优化设计提供了条件.实践证明该方法能大大提高风扇设计者的工作效率,具有重大工程应用价值. 相似文献
5.
网格是有限元仿真的基础,网格质量的好坏直接影响着后续数值计算分析结果的精确性。当分析矩形波导不连续性问题时,对不连续结构电场分布在传播方向的任意切面上完全相同的情况,可以用简化的二维模型得到仿真结果,即仅需进行二维有限元网格划分[1]。由于波导不连续处电场发生变化,通常对不连续区域进行网格加密来保证求解的精度。文中提出了一种基于Delaunay算法的二维有限元网格生成算法,可以实现在电场发生不连续的区域自动进行网格加密,加密效果与COMSOL生成的网格基本一致。文中的加密算法生成的网格可以用于波导二维有限元仿真中。 相似文献
6.
7.
8.
《电子科技文摘》2001,(2)
0103211三维复杂外形非结构网格的生成及应用[刊]/刘学强//南京航空航天大学学报.—2000,32(5).—533~538(E)以 Delaunay 方法为基础生成了三维复杂外形的四面体非结构网格。这种方法的特点是先布结点,然后按 Delatmay 准则将其连接起来。与其他方法相比,其好处是能较好地根据计算需要控制网格点的疏密,提高计算效率,其运行过程也较稳定。在布点过程中采用了背景网格,使点的生成自动而合理。文末给出了 M6机翼和简化航天飞机的数值算例。参6Y2000-62051-1950103212虚拟/扩充现实(含4篇文章)=Dral Session C2:virtu-al/augmented reality[会,英]//Proceedings of 1999IEEE International Conference on Multimedia Computing 相似文献
9.
10.
11.
The letter presents a novel means of mesh adaption when the finite-element method is applied to the semiconductor equations. Using triangular elements it has the ability to avoid obtuse angles while still allowing flexibility in mesh design. The usefulness of the method is demonstrated by a simulation of an MOS device operating at a high drain voltage where generation due to impact ionisation becomes significant. 相似文献
12.
本文在对半导器器件模拟过程分析的了,提出了目前广为流行的器件模拟软件面向对象的设计和开发方法。由此获得的软件系统具有易使用、易维护、易扩展等显著优点,可适应半导体器件不断发展的需要。 相似文献
13.
A contactless Zerbst method has been developed to characterize the generation lifetime and the surface generation velocity
of a semiconductor wafer. This characterization is unaffected by the gate leakage current or the device fabrication process.
In this study, this contactless Zerbst method was used to characterize the generation lifetime and the surface generation
velocity of a partially Au-doped Si wafer. The results demonstrate that the contactless Zerbst method is a powerful technique
for characterizing the generation lifetimes and the surface recombination velocities of semiconductor wafers. 相似文献
14.
Balamurugan Karunamurthy Thomas Ostermann Monojit Bhattacharya Sandipan Maity 《Microelectronics Journal》2014
A methodology for simulating the accurate 3D structural details of a non-planarized technology chips is presented. FEM is a powerful tool used for electrical, thermal and mechanical analysis in the microelectronics industry. Manual geometry and finite element mesh generation of a 3D non-planar chip topology is extremely tedious and time consuming. Therefore, a new method, which is automatic or semi-automatic, is required to drastically reduce the pre-processing effort required for finite element simulations. Our proposed approach uses a virtual semiconductor fabrication technique to create geometry and finite element mesh on complex chip topology features. A microscopic power metal stack of a power IC was simulated to demonstrate this new simulation methodology and the results are presented. These numerical simulations, which included the non-linear behavior in the matrix, show that the detailed information of the large stress and strain gradients in the micro-fields can be obtained. 相似文献
15.
简要介绍了第三代新型半导体材料GaN的特点和优势,基于Agilent ADS微波仿真软件设计并实现了一款工作于S波段基于GaN的高效超宽带微波功率器件。测试结果表明,该器件适用于2.7~3.5GHz的超宽带,连续波和脉冲制式均可工作,在饱和状态下,输出功率大于15W,增益达到13dB,漏极效率超过45%,并在管壳内部实现了匹配和偏置电路,对GaN MOSFET微波功率器件小型化、超宽带、高增益和高效率的优异性能得以验证和实现。 相似文献
16.
Fabrication and Circuit Modeling of NMOS Inverter Based
on Quantum Dot Gate Field-Effect Transistors
Supriya Karmakar John A. Chandy Mukesh Gogna Faquir C. Jain 《Journal of Electronic Materials》2012,41(8):2184-2192
This paper presents the fabrication of a negative-channel metal–oxide–semiconductor (NMOS) inverter based on quantum dot gate field-effect transistors (QDG-FETs). A QDG-FET produces one intermediate state in its transfer characteristic. NMOS inverters based on a QDG-FET produce three states in their transfer characteristic. The generation of the third state in the inverter characteristic makes this a promising circuit element for multivalued logic implementation. A circuit simulation result based on the Berkley simulation (BSIM) circuit model of the QDG-FET is also presented in this paper, predicting the fabricated device characteristic. 相似文献
17.
K. Kosai 《Journal of Electronic Materials》1995,24(5):635-640
In this article, device modeling refers to numerical simulation of semiconductor device physics to predict electrical behavior.
The silicon integrated circuit industry provides the example for the use of technology computer-aided design to simulate wafer
fabrication processes, and the electrical performance of devices and circuits. This paper first reviews semiconductor device
modeling in general, then as applied in work supporting the development and analysis of HgCdTe infrared detectors. Example
applications of one- and two-dimensional device modeling are simulation of a bias-selectable, integrated two-color detector,
and two-dimensional effects on the spectral response of a HgCdTe detector with composition grading. 相似文献
18.
In this paper, a generalized hydrodynamic model that includes four conservation equations for a general, position-dependent energy band structure and effective mass is presented. An analytical mobility model is extended to simulate two-valley semiconductor devices. A semiconductor device simulation package, DYNA, is introduced. Simulation results for both bulk materials and submicron-gate GaAs MESFETs show good agreement with experimental data and Monte Carlo device simulation results. 相似文献
19.
As a result of recent trends in processor speed and core temperature, III-V semiconductors have become a tempting replacement for Si in semiconductor logic. However, as device geometries shrink, the advantages of such a switch are put into question. In this paper we present a computational survey of III-V materials in a tri-gate nanowire MOSFET geometry as compared with Si to determine an optimal material choice for this geometry using a 3D semi-classical Monte Carlo simulation tool. We show that InSb and InAs show promise as future materials for next generation switching devices. 相似文献