表面修饰金刚石薄膜导电性研究进展

表面经过不同化学修饰,金刚石薄膜会表现出不同的表面导电性能。这使得其在平面微电子、微电化学器件开发方面有着广阔的应用前景。总结国内外的研究,结合近年来的研究成果,详述了不同表面修饰金刚石薄膜的实现方法,讨论了表面修饰金刚石薄膜的几何结构和电子结构,并对当前有关表面修饰金刚石薄膜导电机理的主要观点进行了分析。在此基础上,提出了今后不同表面修饰金刚石薄膜导电性的研究重点。     

金刚石薄膜涂层硬质合金刀具的界面表征

采用SEM对金刚石薄膜涂层硬质合金刀具的金刚石薄膜表面、背面及金刚石薄膜剥落后的硬质合金刀片表面的典型形貌进行了观察,并采用TEM对金刚石薄膜／硬质合金刀片横截面的微观组织进行了研究,还采用FT—Raman光谱法对金刚石薄膜表面及金刚石薄膜剥落后的硬质合金刀片表面的微观结构进行了表征．结果表明：经适当的化学侵蚀脱钻和等离子体刻蚀脱碳预处理后,金刚石薄膜涂层硬质合金刀具的界面通常存在薄的（数十nm）石墨碳层;局部区域见到金刚石粒子直接生长在WC颗粒上,金刚石膜／基横截面的典型组织层次为：金刚石薄膜／薄的石墨碳层／细小的WC层／残留的脱碳层（η相＋W相）／原始的硬质合金基体．     

高导热金刚石/铜复合材料界面修饰研究进展

界面结合良好的金刚石/铜复合材料具有优异的热物理性能。通过各种手段修饰金刚石-铜界面能够充分发挥金刚石/铜复合材料的高导热潜力。综述了制备金刚石/铜复合材料时主要的两类界面修饰方法:金刚石表面预镀碳化物形成元素和对铜基体预合金化,并对这两类修饰手段的制备工艺和导热机制进行了简单评述。探讨了金刚石/铜复合材料制备及界面修饰领域目前存在的问题及发展趋势。     

类金刚石薄膜电极的电化学行为研究

类金刚石(DLC)薄膜以其优异的物理化学性能引起了人们的研究兴趣.导电的DLC薄膜可以作为电极材料并表现出宽的电势窗口,低的背景电流,良好的电化学活性,表面易修饰,从而有望用于生物电分析及污水检测等方面.从薄膜的制备、薄膜与基底界面、薄膜表面修饰等几个方面综述了DLC薄膜电极的制备技术和电化学行为研究,并对其应用前景进行展望.     

金刚石薄膜抗激光破坏研究

介绍了金刚石优异的光学和力学特性,对金刚石薄膜在从紫外到红外波段以及不同脉宽激光参数下的激光损伤行为和损伤阈值进行了评述。分析了不同激光工作参数对金刚石薄膜的激光损伤机理,认为石墨化导致晶格失稳是金刚石薄膜激光损伤的主要原因。金刚石薄膜石墨化有两种方式:垂直表面向体层方向石墨化和平行表面按分层的方式逐层石墨化。     

掺氮N型纳米金刚石薄膜的电化学表面氢化及表征

针对掺氮N型纳米金刚石薄膜独特的结构特征,采用温和的电化学阴极表面极化处理成功实现了掺氮N型纳米金刚石薄膜的表面氢化。通过X射线光电子能谱(XPS)、表面接触角、电化学电容-电压分析、Raman光谱、扫描电子显微镜(SEM)表征,详细分析了阴极极化处理前后掺氮N型纳米金刚石薄膜的表面结构以及微观结构。结果表明,该阴极极化处理工艺不仅能够成功获得表面氢终止状态,而且对薄膜的微观结构尤其是晶界处sp2杂化态碳相无明显影响,说明该工艺是一种高效无损的掺氮N型纳米金刚石薄膜表面氢化工艺。     

微米及纳米金刚石薄膜的制备及其组织性能研究.

采用微波等离子体化学气相沉积(MPCVD)方法在铜衬底上沉积了微米和纳米两种金刚石薄膜,过渡层均为钛一铝一钼.用场发射扫描电子显微镜(FESEM)观察薄膜的表面及断面形貌,用拉曼(Raman)光谱测量所得金刚石薄膜的质量,利用压痕法测试了所得薄膜的附着性能,研究结果表明:过渡层可有效提高微米金刚石薄膜在铜衬底上的附着力,反应气氛中Ar的存在可促使纳米金刚石薄膜的形成,改善薄膜表面的粗糙度.     

纳米金刚石表面择优取向生长的氧化锌纳米棒阵列制备及在DNA检测中的应用

研制了基于氧化锌纳米棒阵列的高稳定性和高特异性DNA荧光传感器．首先在纳米金刚石表面制备一层择优取向生长的氧化锌纳米棒，然后通过共缩聚方法在氧化锌表面修饰一层带氨基的硅层．用SEM和XPS对其进行了表征．通过非共价键或共价键方式把探针DNA固定在氧化锌和氨基修饰的氧化锌表面．并对荧光标记DNA进行了检测。实验结果表明共价固定方法比非共价固定方法有更好的特异性。此外，共价固定方法有好的稳定性和较高的灵敏度．     

金刚石薄膜摩擦学性能研究进展

化学气相沉积的金刚石薄膜通常是一种表面粗糙的多晶薄膜,其摩擦系数相对于单晶金刚石明显偏高,制约着其在摩擦学领域的应用.本文介绍了近年来国内外学者为提高金刚石薄膜摩擦学性能而进行的探索研究及其发展现状.简要分析了影响金刚石薄膜摩擦学性能的主要因素,并提出金刚石薄膜应用于摩擦学领域需要重视解决的几个问题.     

沉积参数对化学气相沉积纳米金刚石薄膜的影响

用强电流直流伸展电弧化学气相沉积金刚石薄膜装置,在CH4-Ar和CH4-H2-Ar气氛中沉积了纳米金刚石薄膜,研究了沉积气氛中H2加入量和沉积压力对金刚石薄膜显微组织和生长机制的影响.沉积气氛中H2含量对金刚石薄膜的表面形貌、晶粒尺寸和生长速度有显著影响,随着H2含量增加,金刚石晶粒尺寸增大,薄膜生长速度提高.在1%CH4-Ar气氛中沉积的纳米金刚石薄膜,晶粒尺寸细小,薄膜表面形貌光滑平整.在1%CH4-少量H2-Ar气氛中沉积的金刚石薄膜,晶粒尺寸小于100nm,薄膜表面形貌较平整.随着沉积压力提高,金刚石薄膜的生长速度增大.用激光Ram an对金刚石薄膜进行了表征.     

AFM Study on Interface of HTHP As-grown Diamond Single Crystal and Metallic Film

The study for the interface of as-grown diamond and metallic film surrounding diamond is an attractive way for understanding diamond growth mechanism at high temperature and high pressure (HTHP), because it is that through the interface carbon atom groups from the molten film are transported to growing diamond surface. It is of great interest to perform atomic force microscopy (AFM) experiment; which provides a unique technique different from that of normal optical and electron microscopy studies, to observe the interface morphology. In the present paper,we report first that the morphologies obtained by AFM on the film are similar to those of corresponding diamondsurface, and they are the remaining traces after the carbon groups moving from the film to growing diamond. The fine particles and a terrace structure with homogeneous average step height are respectively found on the diamond(100) and (111) surface. Diamond growth conditions show that its growth rates and the temperature gradients inthe boundary layer of the molten film at HTHP result in the differences of surface morphologies on diamond planes,being rough on (100) plane and even on the (111) plane. The diamond growth on the (100) surface at HPHT could be considered as a process of unification of these diamond fine particles or of carbon atom groups recombination on the growing diamond crystal surface. Successive growth layer steps directly suggest the layer growth mechanism of the diamond (111) plane. The sources of the layer steps might be two-dimensional nuclei and dislocations.     

Analysis of the Phenomena of Diamond Synthesis by Seeding with Diamond

Synthesizing diamond single crystal by diamond seed particles which were electroplated with nickel film as catalyst under high pressure and high temperature （HPHT） was described. The microstructure of nickel film after synthesis and morphology of grown diamond were investigated by means of X-ray diffraction （XRD） and scanning electron microscopy （SEM）, respectively. The phase structure in nickel film were graphite, NiC, Ni, and diamond structure hadn＇t been found. A lot of recrystallized graphite pits appear in interface between the inner surface of nickel film and the surface diamond. It is shown that the new-grown diamond was developed epitaxially on the crystal planes of seeds. Also, the new-grown diamond grew by two-dimensional nucleation and by a layer growth mechanism. The growth process of crystal was microaggregate→step→expansion→new crystal layers, and the flat growth interface transformed into a cellular interface at the same time.     

金刚石膜在多孔硅发光中的应用

采用微波等离子体化学气相沉积（MPCVD）法成功地在多孔硅上沉积出均匀、致密的金刚石膜。光致发光测量表明,金刚石膜可以有效稳定多孔硅的发光波长和发光强度,具有明显的钝化效应。金刚石膜的这个特点再加上高硬度特性使金刚石膜成为多孔硅的一种潜在的钝化膜。     

大面积印刷纳米金刚石薄膜的场致发射的研究

研制了特定比例的纳米金刚石浆料,采用了丝网印刷工艺在石墨衬底上大面积印制了纳米金刚石场发射薄膜,实验探索了石墨衬底纳米金刚石薄膜的烧结工艺和后处理过程,利用扫描电镜(SEM)观察了纳米金刚石膜的表面形貌,经后处理的薄膜中纳米金刚石露出薄膜表面,纳米金刚石的棱角是天然的发射体.采用本课题组研制的多功能场发射测试台在10-6Pa的真空条件下进行了场发射特性的测试,结果发现石墨上低成本大面积印刷的纳米金刚石薄膜具有均匀稳定的场发射特性,作为电子器件的理想冷阴极发射,可在宇宙飞船、原子反应堆等恶劣条件下工作的平面显示器中得到应用.     

Energetics of Ti atom diffusion into diamond film

Energetics of Ti atom in metallization of diamond film were studied by calculations using density functional theory (DFT) and a composite basis set. Cluster models consisting of more than 10 C atoms were chosen to simulate the diamond phase with their boundaries saturated with H atoms. When Ti atom diffuses from the surface into the bulk of diamond interstitially, the energy barriers were found to be about 40 eV. Ti was found to favor substitutional sites rather than interstitial sites in diamond crystal. Our results indicate that the high concentration of Ti in chemical vapor deposited diamond films after metallization would occupy the grain boundaries rather than the bulk of diamond grain.     

CVD金刚石薄膜的介电性能研究

对直流电弧等离子体ＣＶＤ制备的金刚石薄膜的介电性能进行了研究，结果表明，金刚石薄膜的介电性能主要取决于样品的多昌性质以及表面和晶界处的非金刚石相和杂质成分。     

Surface nanostructuring of boron-doped diamond films and their electrochemical performance

Uniform and vertically aligned nanocone and nanopillar arrays were successfully constructed on heavily boron-doped nanocrysatlline diamond films by carrying out bias-assisted reactive ion etching in hydrogen/argon plasmas. The electrochemical properties of the nanostructured boron-doped diamond films were investigated by cyclic voltammetry using 1 mM [Fe(CN)6](3-/4-) as redox couple. Compared to the planar boron-doped nanocrystalline diamond film electrode, the surface nanostructuring of boron-doped diamond film electrodes demonstrate enhanced sensitivity due to their enlarged electro-active surface areas. The results indicated that boron-doped diamond nanocones and nanopillars are promising electrode materials which benefit to improve the efficiency, sensitivity and reproducibility of biomedical and chemical sensors.     

Temperature enhanced gas sensing properties of diamond films

Nanocrystalline diamond (NCD) film was used as a functional part of gas sensor. The gas sensing properties of H-terminated nanocrystalline diamond films were examined to oxidizing gases (i.e., COCl₂ and humid air). Pronounced increase in the surface conductivity (3 orders of magnitude) was found after sensor exposure to phosgene gas and was explained by the surface transfer doping effect. We also present a possible way how to achieve sensor selectivity, i.e. how to distinguish between phosgene and humid air (the mostly present background gas in a common environment).     

Al2O3陶瓷上沉积金刚石薄膜的研究

以酒精为碳源，用热丝ＣＶＤ法对不同表面状态的Ａｌ２Ｏ３衬底进行了金刚石薄膜沉积的比较，用扫描电镜，喇曼光谱和Ｘ射线衍射等方法检测了沉积出的金刚石膜的质量，并讨论了它们对成核和生长的影响。