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《半导体技术》1984,(4)
1.半导体中离子注入杂质结构的计算机模拟模型S.S.Commun.,Vol.47,No.4,P.259,1983,72.具有SiO_2图形的硅衬底上无定形硅膜的横向固相外延Appl.Phys.Lett.,Vol.43,No.11,P.1028,1983,123.新MRS型负性抗蚀剂组分的最佳化IEEE Trans.ED,Vol.30,No.12,P.1780,1983,124.环境气体对未掺杂LEC GaAs晶体的影响Jap.J.Appl.Phys.Pt.1,Vol.22,No.11,p.1652,1983,115.InP中磷析出与时间和温度的关系J.Vac.Sci.Technol.B,Vol.1,No.3,P.825,1983,7~9 相似文献
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《半导体技术》1985,(2)
1.GaAs-GaAlAs异质结构中电子迁移率与温度的关系Appl.Phys.Lett.、Vol.45,No.2,P.294,1984.72.半导体器件失效分析—理论、方法和实践Microelectron.J.,Vol.15,No.1,P.5,1984.1-23.双极功率器件(晶体管)Microelectron.Reliab,Vol.24,No.2,P.313,19844.新型硅微波功率晶体管可靠性大大提高Microw.RF,Vol.27,No.7,P.71,1984.75.大功率半导体器件采用ⅡA型金钢石作散热器提高了输出功率Microw.RF,Vol.27,No.7,P.74,1984.7 相似文献
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《半导体技术》1984,(3)
1.砷化镓可透基区晶体管设计的改进IEEE Trans.ED,Vol.30,No.10,P.13481983,102.硅化物工艺对双极晶体管电流增益的影响IEEE Trans,ED,Vo.30.No,10,P.1406,1983,103.松下使用MBE成功地研制出新结构的GaAs FET(日)电子技术,Vol.25,No.12,P.13,1983,114.制作亚微米厚GaAs薄膜的一种新方法APPl.Phys.Lett.,Vol.43,No.5,P.488,1983,95.多晶硅中硼和磷的扩散特性Thin Solid Films,Vol.100,No.3,P.235,1983,2 相似文献
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《微波学报》1986,(2)
1.J.A.Roumeliotis,”Propagation and scattering of electromagnetic wavein eccentric cylindrical and spherical conductor-dielectric configurations“,Ph.D.Thesis。Department of Electrical Engineering,National Technical Univer-sity of Athens,Greece,1979(in Greek).(Journal of The Franklin Institute,Vol.312,No.1,July 1981,p.58).2.W.B.Dolson,”Free electron laser theory,”Ph.D.dissertation,StanfordUniv.,Stanford,CA.,1977. 相似文献
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《半导体技术》1985,(1)
1.半绝缘GaAs中表面电导的机理Appl.Phys.Lett.,Vol.44,No.9,P.869,19842.GaAs MOCVD中一种新的硅掺杂源——乙硅烷Appl.Phys.Lett.,Vol.44,No.10,P.986,19843.用超掺杂结构开发新半导体材料(制作超高速器件)Vol.29,No.8,P.7,19844.乳胶掩模材料电子材料,Vol.23,No.8,P.42,19845.光致抗蚀剂材料电子材料,Vol.23,No.8,P.51,19846.GaAs MESFET跨导和衬底特性之间的相互关系IEEE Electron Dev.Lett.,Vol.5,No.6, 相似文献
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肠彩色显示用的液晶材料万于一表示用液晶材料向尾昭夫,今朋周治日立郭瑜(日)vol.63,No.J,pp.231~23),ioaz.96.染料与液晶Dyes and Liquid CrystalG .W.GrayDye Pigm(英)Vol.3,No.2/3,PP.203~209,1982.97.液晶显示器用的涂料Dyes for Liquid Crystal DisPlaysE .M Engler,A.C.LoweIBM Teeh Diselosure Bull,Vol.23,No.12,PP.55~ 58,1981,阳.液晶显示器用的黄色染料Yellow Dyes for Liquid Crystal DisPlays.N .J.Cleeak,R J CoxIBM Teeh Diselosure Bull,Vol.23,No.12,PP.5540一 55遵2,1 981.99.宾主型显示器中偶氮… 相似文献
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S. A. Blokhin N. A. Maleev A. G. Kuz’menkov Yu. M. Shernyakov I. I. Novikov N. Yu. Gordeev V. V. Dyudelev G. S. Sokolovskiĭ V. I. Kuchinskiĭ M. M. Kulagina M. V. Maximov V. M. Ustinov A. R. Kovsh S. S. Mikhrin N. N. Ledentsov 《Semiconductors》2006,40(5):615-619
Vertical-cavity surface-emitting lasers (VCSELs) with an active region based on sub-monolayer InGaAs quantum dots and doped
AlGaAs/GaAs distributed Bragg reflectors were grown by MBE. VCSELs with current aperture of 3 μm in diameter demonstrate single-mode
lasing in 980-nm range with the threshold current of 0.6 mA, maximum output power up to 4 mW, and external differential efficiency
of 68%. Multimode VCSELs with a (10–12)-μm aperture demonstrate ultralow internal optical loss of 0.09% per pass, which compares
favorably with the best results obtained in similar lasers with undoped distributed Bragg reflectors.
Original Russian Text ? S.A. Blokhin, N.A. Maleev, A.G. Kuz’menkov, Yu. M. Shernyakov, I.I. Novikov, N.Yu. Gordeev, V.V. Dyudelev,
G.S. Sokolovskiĭ, V.I. Kuchinskiĭi, M.M. Kulagina, M.V. Maximov, V.M. Ustinov, A.R. Kovsh, S.S. Mikhrin, N.N. Ledentsov, 2006,
published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 633–638. 相似文献
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1.Infrared Simulation Model SENSAT-2红外模拟模型 SENSAT-2《Appl.Opt.》1987,V.26,N.12,pp.2376~2382.2.High Speed Infrared Radiome(?)er 高速红外辐射计《JOSA》1959,V.49,N.2,p.179.3.Spectral Radiation of Sky and Terrain at Wavelength between 1 and 20 Micron 波长在1~20μm 的天空光谱辐射《JOSA》1960,V.50,N.12.PP.1308~8~1320.4.Re-Entry Radiation From A IRBM 中程弹道导弹再入辐射《IRE.Trans.on Millitary Electronics》1961.Vol.Mil-5,N,1,pp.19~25. 相似文献
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《半导体技术》1984,(2)
1.SiO_2层中离子注入感生陷阱的俘获截面与电场的关系 Thin Solid Films.,Vol.99,No.4,P.331,1983.12.纯GaAs和掺杂GaAs中的空穴输运 J.AP-pl.,Phys.,Vol.54,No.8,P.4446,1983.83.掺磷多晶硅膜ac特性的说明:横过低势垒晶粒间界的传导 J.APPl.Phys.,Vol.54,No.8,P.4463,1983.84.氮化硅中的缺陷和杂质态 J.APPl.Phys.,Vol.54,No.8,P.4490,1983.85.具有亚微米分辨率和工艺稳定的自显影抗蚀剂 APPl.Phys.Lett.,Vol.43,No.1,P.74,1983.76.用于细条光刻的抗蚀剂 PIEEE.,Vol.71,No.5,P.570,1983.5 相似文献
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《真空电子技术》1967,(Z1)
(共八十二篇)仁1〕直波微波相位爵(英文) H .A.Dropkm IRE工n七er.Conv.Ree.,Pt.1,pP.143~147, 1058.〔2]精确的微波相移测量(英文) M .Magid IRE Trans.onl,Vo!.17,No.3一4, pp.321一331,1958. 泽文见“电子学泽丛”第从期,第49~57页。〔3]甚高须和超高缓振幅及相位的测量方法 (英文) G .D.Mozlteath,D.J Wllythe,K.W.T. Hughes PIEE,Vol.107,Pt.B,No.32,pP.150一154, 1960〔4〕超高镇速精波或脉冲波精密相位酚(英 文) R .T.Stevens E legtz、onies,Vol,33,No.10,pP.54一57, 1960.t6」微波频率相对相移的测量(英文) C .… 相似文献
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1IntroductionMohonestimationplaysanimportantroleindigitalvideocompression.Block-matchingtechniquehasbeenadoptedinmanyvideocompressionstandardssuchasH.261,MPEG-l,MPEG-2andH.263.Eventhoughthealgorithmtoestimatethemotionvectorsisnotspecifiedexplicitly.However,despiteitssuccessfulapplications,itproducesarathernoisyinchonfield.Inverylowbit-ratevideocodingapplications,theamountofthesideinformationfortheinchonfieldrepresentsanimPOrtantportionofthetotalbit-rate.Therefore,motionestimatetechniques… 相似文献
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Analytical form of EM fields radiated by circular aperture antennas of various current distributions
~~Analytical form of EM fields radiated by circular aperture antennas of various current distributions[1] Schelkunoff S. A., Advanced Antenna Theory, John Wiley &Sons, 1952.
[2] E|liott R.S., Antenna Theory and Design, Prentice-Hall, Engie-wood Cliffs, N J, 1981.
[3] R.W.P. King and G.S. Smith, Antennas in Matter: fundamen-tals, Theory and Applications, MIT Press, Cambirdge, MA,1981.
[4] W.L. Stutzman and G.A. Thiele, Antenna Theory and Desigrn,John Wiley & S… 相似文献
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《光机电信息》1994,(5)
非成像光学:光转换.大效率“Non玉magin‘opties:maximum effieieney light transfer//P了。‘.SPIE.一1公91,V.1528.一170脸眼透位的设计和加工一OPhthal而e lena d.i‘n and fabr咖ti如//P roc.SP压.一1,92,V.1529.一139先散射的应用测t和反理.optie目一eattor:application.,~u,meot,and the介叮/户roc.SP花.一1991,V.1530.一371当代光学制遭和检验n二人d铃ncedo钟么cal manufacturina and t.tingll//Proc·SP正.一1992,V 1531一319光学结构分析.Analysis ofoptieal.truetu心//Proc.SPIE.一1991,V.1532.一272光学机械和尺寸艳… 相似文献
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A. A. Biryukov B. N. Zvonkov S. M. Nekorkin V. Ya. Aleshkin V. I. Gavrilenko K. V. Marem’yanin S. V. Morozov V. V. Kocharovskii Vl. V. Kocharovskii 《Semiconductors》2007,41(11):1364-1368
An easily reproducible construction of two butt-joint laser diodes based on a GaAs/InGaAs/InGaP structure is fabricated and
investigated. The construction forms a composite cavity in which about half of stimulated emissions of a long-wavelength diode
transforms into emissions of a ground mode of a waveguide of a short-wavelength diode. It is found that the emission spectrum
from the composite cavity is represented not only by fundamental (close) frequencies of two diodes with a power of ∼1 W, but
also by their sum frequency and second harmonic with a power as high as 1 μW. The found nonlinear enrichment of the emission
spectrum of a two-frequency heterolaser with a composite cavity is caused by a lattice nonlinearity of the semiconductor and
allows one to plan equally effective intracavity generation of various frequencies in a far-IR range at room temperature.
Original Russian Text ? A.A. Biryukov, B.N. Zvonkov, S.M. Nekorkin, V.Ya. Aleshkin, V.I. Gavrilenko, K.V. Marem’yanin, S.V.
Morozov, V.V. Kocharovskii, Vl.V. Kocharovskii, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 11,
pp. 1384–1388. 相似文献
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《光机电信息》1996,(9)
运载器制导和控制合成视觉=Synthetic vision for vehicle guidance and control//Proc.SPIE.—1995,V.2463空中交通控制技术=Air traffic control technologies//Proc.SPIE.—1995,V.2464头盔,头盔显示及符号设计要求Ⅱ= Helmet—and head—mounted displays and symbology d-e-sign requirementsⅡ//Proc.SPIE.—1995,V.2465空间制导、控制及跟踪=Space guidance,control,and tracking Ⅱ//Proc.SPIE.—1995,V.2466光控飞行:技术转让=Fly—by—light:technology transter//Proc.SPIE.—1995,V.2467捕获:跟踪与瞄准Ⅳ=Acquisition,tracking,and pointing Ⅸ∥Proc.SPIE.—1995,V.2468 相似文献