0.18μm CMOS 3.1-10.6GHz超宽带低噪声放大器设计

介绍了一种基于0.18μm CMOS工艺、适用于超宽带无线通信系统接收前端的低噪声放大器.在3.1～10.6GHz的频带范围内对它仿真获得如下结果:最高增益12dB;增益波动小于2dB;输入端口反射系数S11小于-10dB;输出端口反射系数S22小于-15dB;噪声系数NF小于4.6dB.采用1.5V电源供电,功耗为10.5mW.与近期公开发表的超宽带低噪声放大器仿真结果相比较,本电路结构具有工作带宽大、功耗低、输入匹配电路简单的优点.     

3.1～5.2GHz超宽带可变增益低噪声放大器设计

低噪声放大器是超宽带接收机系统中最重要的模块之一,设计了一种可应用于3.1～5.2GHz频段超宽带可变增益低噪声放大器。电路输入级采用共栅结构实现超宽带输入匹配,并引入电流舵结构实现了放大器的可变增益。仿真基于TSMC 0.18μm RF CMOS工艺。结果表明,在全频段电路的最大功率增益为10.5dB,增益平坦度小于0.5dB,噪声系数小于5dB,输入反射系数低于-15dB,在1.8V电源电压下,功耗为9mW。因此,该电路能够在低功耗超宽带射频接收机系统中应用。     

0．35μm SiGe BiCMOS 3．1～10．6GHz超宽带低噪声放大器

基于AMS 0.35 μm SiGe BiCMOS工艺,设计了一种应用于3.1～10.6 GHz频段的超宽带低噪声放大器;采用多个反馈环路,实现超宽带范围内的阻抗匹配以及低噪声性能;详细分析了匹配电路的特性.在片测试结果表明,在工作频带内,电路增益S21达到14 dB,增益波动小于2 dB;输入回波损耗S11小于-10 dB;噪声系数NF小于3.5 dB.电路采用3 V供电,功耗为30 mW.     

增益可调宽带CMOS低噪声放大器设计

设计了一种应用于超宽带系统中的可变增益宽带低噪声放大器。电路中采用了二阶巴特沃斯滤波器作为输入和输出匹配电路;采用了两级共源共栅结构实现电路的放大,并通过控制第二级的电流,实现了在宽频带范围内增益连续可调;采用了多栅管(MGTR),提高了电路的线性度;设计基于SMIC 0.18μm CMOS工艺。仿真结果显示,在频带3~5 GHz的范围内最高增益17 dB,增益波动小于1.8 dB,输入和输出端口反射系数分别小于-10 dB和-14 dB,噪声系数nf小于3.5 dB,当控制电压Vctrl=1.4 V时,IIP3约为2 dBm,电路功耗为16 mW。     

采用噪声消除技术的3-5GHz CMOS超宽带LNA设计

设计了一种适用于超宽带无线通信系统接收前端的全集成低噪声放大器.该放大器以经典窄带共源共栅低噪声放大器为基础,通过加入并联负反馈电阻以扩展带宽,采用噪声消除技术优化噪声系数.低噪声放大器基于SMIC 0.18-μmRF CMOS工艺进行设计与仿真,仿真结果表明,在3-5 GHz的频带范围内,S11小于-13 dB,S22小于-11.8 dB,S21大于17.3dB,S12小于-32 dB,增益平坦度小于0.7 dB,最大噪声系数为2.9 dB,输入三阶截断点为-12.9 dBm.采用1.8 V电源供电,电路总功耗约为20.5 mW.     

应用于DSRC系统的5.8GHz CMOS LNA设计

基于TSMC 0.18μm CMOS RF工艺,完成了一个全集成共源-共栅低噪声放大器设计。版图后仿真结果表明:1.8V电源电压下,电路静态功耗约为17mW;在DSRC系统工作频段上,电路实现了良好的综合性能指标,输入反射系数(S11)和输出反射系数(S22)小于-15dB,增益(S21)大于14.0dB,反向隔离度(S12)达到32dB,噪声系数小于2dB,并且工作稳定。     

一种采用噪声抵消及多重功耗优化技术的UWB-LNA

采用噪声抵消及多重功耗优化技术,提出了一种超宽带低噪声低功耗放大器。它主要包括采用RL网络的共栅输入级、电流复用型噪声抵消级、放大输出级以及偏置电路四个部分。验证结果表明,该放大器,在2-6GHz频带内,增益(S21)可以在14dB以上;输入回波损耗(S11)小于-10dB;输出回波损耗(S22)小于-25dB;噪声系数(NF)小于3.2dB;在3.8V的工作电压下,功耗仅为14mW。     

CMOS宽带线性可变增益低噪声放大器设计

文章设计了一种48MHz~860MHz宽带线性可变增益低噪声放大器,该放大器采用信号相加式结构电路、控制信号转换电路和电压并联负反馈技术实现。详细分析了线性增益控制、输入宽带匹配和噪声优化方法。采用TSMC0.18μm RF CMOS工艺对电路进行设计,仿真结果表明,对数增益线性变化范围为-5dB~18dB,最小噪声系数为2.9dB,S11和S22小于-10dB,输入1dB压缩点大于-14.5dBm,在1.8V电源电压下,功耗为45mW。     

改进型双频段低噪声放大器设计

设计了一种电流复用结构的双频段低噪声放大器,其中心频率为900 MHz和1 900 MHz。为减少芯片面积和提高电路性能,给出了一种改进的输入端和级间匹配网络,利用小电感LC网络代替大电感的栅极电感Lg和级间电感Ld1。仿真结果表明:该低噪放在两个需要的频带内功率增益(S21)大于16.0 dB;输入反射系数(S11)小于-18.6 dB;输出反射系数(S22)小于-12 dB;反向隔离(S12)小于-40 dB;噪声系数(NF)小于2.8 dB;线性度(IP3)大于-9.5 dBm。设计采用SMIC 0.18μmCMOS工艺,功耗为8.64 mW,电源电压1.8 V。     

0.13微米CMOS双通道超宽带低噪声放大器设计

本文设计了一款超宽带低噪声放大器,并对设计流程进行分析仿真.该低噪放采用双通道结构,有效的输入阻抗匹配、平稳的增益和低噪声等性能可以同时实现.应用ADS工具TSMC 0.13μm CMOS工艺库的仿真结果表明,其最大功率增益为14.2dB,在8GHz频点的IIP3为-4dBm,输入、输出反射系数分别小于-10.2dB和-10.89dB,噪声指数单调下降到1.46dB,并且总功耗和带内最大增益摆幅较低.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.