共查询到19条相似文献,搜索用时 125 毫秒
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采用磁控溅射制备了结构为Pt/PZT/Pt/Ti/SiO2/Si的PZT铁电电容,并对样品用去离子水处理,通过测试其电滞回线以及漏电流,并结合XPS分析,研究了去离子水对PZT铁电电容的性能影响.结果表明,在去离子水清洗后,由于在PZT表面有吸附,PZT电容电滞回线沿电压轴发生漂移,电子势垒降低,漏电流增大,经过高温热... 相似文献
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《微纳电子技术》2019,(3):233-238
可控剥离技术(CST)作为一种薄膜制备方式已被广泛应用于柔性领域,例如硅基柔性太阳电池等。首先采用溶胶-凝胶法先后在普通硅基底上制备镍酸镧(LaNiO3)缓冲层和锆钛酸铅(PZT)薄膜。通过X射线衍射仪(XRD)和扫描电子显微镜(SEM)进行材料表征,发现PZT薄膜结晶良好,而且表面致密均匀,表明LaNiO3缓冲层有利于PZT薄膜的成膜。之后通过基于电镀镍方法的可控剥离技术实现了硅基底柔性PZT薄膜的制备。PZT薄膜弯曲之后,采用铁电测试仪测试了电滞回线。电滞回线表明该PZT薄膜的极化强度随着施加电压的增加而增大,而且随着电压的增加,电滞回线逐渐趋于饱和,饱和极化强度为38μC/cm~2。最终得出该柔性PZT薄膜不仅具有良好的机械性能,而且具有很好的铁电性能。 相似文献
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铁电存储器中Pb(Zr,Ti)O_3集成铁电电容的制备 总被引:1,自引:0,他引:1
在铁电不挥发存储器 (FERAM)技术中 ,集成铁电电容的制备是关键工艺之一。文中提出一种制备集成铁电电容的改进工艺 :采用 lift-off技术在衬底样品表面淀积铁电电容 Pt/Ti下电极 ,然后用 Sol-Gel方法制备 PZT薄膜。在 PZT薄膜未析晶前 ,先将它加工成电容图形 ,再高温退火成为 PZT铁电薄膜。最后完成铁电电容 Pt上电极。与传统工艺相比 ,改进后的工艺能保持 PZT铁电薄膜与金属上电极之间良好的接触界面。测试结果表明 ,工艺条件的变动不会影响 PZT铁电薄膜的成膜和结构 ,从而可得到性能优良的铁电电容。 相似文献
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采用脉冲激光沉积方法(PLD)制备了Au/PZT/BIT/p-Si多层结构铁电存储二极管.对铁电存储二极管的P-E电滞回线、I-V特性曲线分别进行了测试与分析,并对其导电行为及基于I-V特性回滞现象的存储机理进行了讨论.实验表明,所制备的多层铁电薄膜具有较高的剩余极化(27μC/cm2)和较低的矫顽场(48kV/cm),BIT铁电层有助于缓解PZT与Si衬底之间的界面反应和互扩散,减少界面态,与Au/PZT/p-Si结构相比,漏电流密度降低近两个数量级,I-V特性曲线回滞窗口明显增大. 相似文献
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硅基铁电薄膜的制备和特性研究 总被引:2,自引:0,他引:2
本文详细介绍了在硅衬底上用SOL-GEL方法制备PZT铁电薄膜电容的工艺步骤,对铁电薄膜进行了XPS分析、表面形貌分析、XRD分析,测量了铁电电容的电滞回线及C-V曲线,并分析了各种工艺条件对铁电薄膜性能的影响. 相似文献
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采用脉冲激光沉积方法 (PL D)制备了 Au/ PZT/ BIT/ p- Si多层结构铁电存储二极管 .对铁电存储二极管的P- E电滞回线、I- V特性曲线分别进行了测试与分析 ,并对其导电行为及基于 I- V特性回滞现象的存储机理进行了讨论 .实验表明 ,所制备的多层铁电薄膜具有较高的剩余极化 (2 7μC/ cm2 )和较低的矫顽场 (4 8k V/ cm ) ,BIT铁电层有助于缓解 PZT与 Si衬底之间的界面反应和互扩散 ,减少界面态 ,与 Au/ PZT/ p- Si结构相比 ,漏电流密度降低近两个数量级 ,I- V特性曲线回滞窗口明显增大 相似文献
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Pb(Zr_(0.52)Ti_(0.48))O_3(PZT) thin films have been deposited on a p-type Si substrate separated by a polycrystalline silicon/SiO_2 stacked buffer layer.The X-ray diffraction peaks of the PZT thin films prepared on the polycrystalline silicon annealed at different temperatures were measured.In addition,the polarization of the Pt/PZT/polycrystalline silicon capacitor has been investigated.The memory capacitor of the metal/ferroelectric/polycrystalline silicon/SiO_2/semiconductor structure annealed at 650℃... 相似文献
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PZT铁电场效应晶体管电学性能 总被引:2,自引:0,他引:2
采用磁控溅射法制备了(111)向择优的Pb(Zr0.52Ti0.48)O3(PZT)铁电薄膜,并结合半导体集成技术制备了金属/铁电/金属/多晶硅/绝缘层/Si衬底(MFMIS)结构的n沟道铁电场效应晶体管.研究了铁电场效应晶体管的C-V特性、I-V特性以及写入速度.顺时针的C-V滞回曲线和逆时针的Id-Vg滞回曲线表明,n沟道PZT铁电场效应晶体管具有极化存储性能和明显的栅极化调制效应,并且在-5V到+5V的Vg电压下从C-V和Id-Vg滞回曲线中都得到了2V的存储窗口. 相似文献
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PZT铁电场效应晶体管电学性能 总被引:1,自引:0,他引:1
采用磁控溅射法制备了(111)向择优的Pb(Zr0.52Ti0.48)O3(PZT)铁电薄膜,并结合半导体集成技术制备了金属/铁电/金属/多晶硅/绝缘层/Si衬底(MFMIS)结构的n沟道铁电场效应晶体管.研究了铁电场效应晶体管的C-V特性、I-V特性以及写入速度.顺时针的C-V滞回曲线和逆时针的Id-Vg滞回曲线表明,n沟道PZT铁电场效应晶体管具有极化存储性能和明显的栅极化调制效应,并且在-5V到 5V的Vg电压下从C-V和Id-Vg滞回曲线中都得到了2V的存储窗口. 相似文献
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采用准分子脉冲激光沉积(PLD)工艺,制备了Au/PZT/p-Si结构铁电存储二极管.在氧气氛350℃低温沉积、原位530℃快速退火工艺条件下,获得了多晶纯钙钛矿结构的Pb(Zr0.52Ti0.48)O3(PZT)铁电薄膜.PZT薄膜的铁电性能测试显示较饱和的、不对称的电滞回线,其剩余极化和矫顽场分别为13μC/cm2和48kV/cm.从C-V和I-V特性曲线观察到源于铁电极化的回滞现象,记忆窗口约1.1V,+4V偏压下电流密度为3.9×10-6A/cm2. 相似文献
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电极对PZT铁电薄膜性能的影响 总被引:7,自引:1,他引:7
用溶胶-凝胶法制备PZT铁电薄膜。以Pt/Ti/SiO2/Si为底电极,Au为上电极,形成金属-铁电薄膜-金属结构的铁电电容器。研究电极对PZT铁电薄膜结构和电性能的影响,实验发现,金属Ti的厚度会影响PZT铁电薄膜的结构。界面层的存在使介电系数、自发极化、矫顽电压、漏电流都与薄膜的厚度有关。 相似文献
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The ferroelectric properties of Nb-doped PZT thin films prepared by a sol-gel method were evaluated relative to memory device
application requirements. Within the range of 0 to 4 mol %, Nb-doping of PZT compositions near the morphotropic phase boundary
region (i.e. PZT 53/47) enhanced overall ferroelectric properties by reducing the te-tragonal distortion of the unit cell. A 4 mol % Nb-doped
PZT 53/47 thin film (0.26 μm) had a coercivity of 8 V/ μm, a remanence ratio of 0.54, a switchable polarization of 45 μC/cm2, and a specific resistivity of 3 x 109 Ω-cm. Nb-doping levels in excess of 5 mol had a detrimental effect on the resulting thin film ferroelectric properties. X-ray
diffraction (XRD) analysis of highly doped films showed development of a significant PbO phase accompanied by diffraction
line broadening of the perovskite phase. As such, it was postulated that the creation of excessive lead vacancies in the PNZT
lattice resulted in PbO accumulation at the grain boundaries which impeded grain growth, and hence, adversely affected ferroelectric
switching performance. The fatigue performance of the sol-gel derived thin film capacitor system was a function of switching
voltage. At switching fields sufficient to saturate the polarization, the endurance of the thin film capacitor was greater
than 109 cycles. Cycling with lower fields reduced endurance values, but in all cases, the switchable polarization decreased linearly
with the logarithm of cycles. Nb-doping did not have a significant effect on the fatigue performance. 相似文献
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Ferroelectric hysteresis loop measurement under high driving frequency generally faces great challenges.Parasitic factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis loops with erroneous rem-nant polarization(Pr)and coercive field(Ec).In this study,positive-up-negative-down(PUND)measurement under a wide fre-quency range was performed on a 10-nm thick Hf0.5Zr0.5O2 ferroelectric film.Detailed analysis on the leakage current and RC delay was conducted as the polarization switching occurs in the FE capacitor.After considering the time lag caused by RC delay,reasonable calibration of current response over the voltage pulse stimulus was employed in the integral of polarization current over time.In such a method,rational P-V loops measured at high frequencies(>1 MHz)was successfully achieved.This work provides a comprehensive understanding on the effect of parasitic factors on the polarization switching behavior of FE films. 相似文献