Hopping transport in doped (Pb0.78Sn0.22)1−x InxTe solid solutions

Transport coefficients in (Pb_0.78Sn_0.22)_1?x In_xTe solid solutions with indium content x=0.03 and 0.05 additionally doped with acceptors (Tl) or donors (Cl) have been measured and analyzed. The Seebeck coefficient S is positive for x=0.05 in the low temperature range 77–200 K; its sign changes to negative when the Tl acceptor is added. This unusual behavior of the thermoelectric power can be attributed to hopping conduction at a nonmonotonic energy dependence of the density of localized states. The density-of-states function has been determined at x=0.03 and 0.05 from experimental data on the thermopower. Theoretical estimates of the Nernst-Ettingshausen coefficient are made for x=0.03 additionally doped with Cl. The estimates are based on taking into account, along with the hopping conduction, the contribution from electrons with energies above the mobility edge and on using the critical electrical conductivity exponent obtained in the percolation theory. The activation energies characterizing the temperature dependences of conductivity and Hall and Nernst-Ettingshausen coefficients are discussed and compared.     

Measurement of density of the gap states ina-Si:H by the normalization of photoconductivity

The spectra of the optical absorption coefficient in low absorption region are obtained by using a normalization procedure for the photoconductivity spectra. The results are explained in terms of the optical transition of electrons from localized states in the exponential valence band tail and in dangling bond states 1.0 eV below the conduction band edge to extended conduction band states. Then the density of the gap states below the Fermi levelE _F is obtained. From the investigation of recombination kinetics, the average density of the gap states over the range of ) and the density of the gap states above the Fermi levelE _F are obtained. These indicate that the width of the conduction band tail is smaller than that of the valence band tail.     

Transport and interface states in high-κ LaSiOx dielectric

The paper presents the results of capacitance-voltage, conductance-frequency and current-voltage characterization in the wide temperature range (140-300 K) as well as results of low temperature (5-20 K) thermally stimulated currents (TSC) measurements of metal-oxide-semiconductor (MOS) structures with a high-κ LaSiO_x dielectric deposited on p- and n-type Si(1 0 0) substrate. Interface states (D_it) distribution determined by several techniques show consistent result and demonstrates the adequacy of techniques used. Typical maxima of interface states density were found as 4.6 × 10¹¹ eV⁻¹cm⁻² at 0.2 eV and 7.9 × 10¹¹ eV⁻¹cm⁻² at 0.77 eV from the silicon valence band. The result of admittance spectroscopy showed the presence of local states in bandgap with activation energy E_a = 0.38 eV from silicon conductance band, which is in accord with interface states profile acquired by conductance method. Low-temperature TSC spectra show the presence of shallow traps at the interface with activation energies ranging from 15 to 32 meV. The charge carrier transport through the dielectric film was found to occur via Poole-Frenkel mechanism at forward bias.     

Band offsets at the (1 0 0)GaSb/Al2O3 interface from internal electron photoemission study

From electron internal photoemission and photoconductivity measurements at the (1 0 0)GaSb/Al₂O₃ interface, the top of the GaSb valence band is found to be 3.05 ± 0.10 eV below the bottom of the Al₂O₃ conduction band. This interface band alignment corresponds to conduction and valence band offsets of 2.3 ± 0.10 eV and 3.05 ± 0.15 eV, respectively, indicating that the valence band in GaSb lies energetically well above the valence band of In_xGa_1−xAs (0 ? x ? 0.53) or InP.     

Optical study of resonant states in GaN x As1−x

To detect resonant states in the conduction band of GaN_xAs_1?x , it is suggested to study the spectra of intrinsic photoluminescence at room temperature or under high-level excitation, which fills high-energy states in the allowed bands with carriers excited by light. Energy levels within the conduction band of bulk GaN_xAs_1?x (x ≤ 0.015) layers were detected by the suggested method. These levels form a band of about 0.07 eV in half-width, with its density-of-states peak lying at ～1.4 and ～1.48 eV above the top of the valence band at temperatures 290 and 80 K, respectively. The position of this peak with respect to the valence band is virtually independent of the nitrogen content for all the studied range, 0.0005 ≤ x ≤ 0.015. It is assumed that these states are related to different clusters of nitrogen atoms.     

Experimental and theoretical investigation of defects at (1 0 0) Si1−xGex/oxide interfaces

The identification of a nontrigonal Ge dangling bond at SiO₂/Si_1−xGe_x/SiO₂ heterostructures and its electrical activity are discussed, both from experimental and theoretical points of view. This dangling bond is observed from multifrequency electron-spin resonance experiments performed at 4.2 K, for typical Ge concentrations in the range 0.4 ≤ x ≤ 0.85. The electrical activity of this defect is revealed from capacitance-voltage characteristics measured at 300 and 77 K, and is found to behave like an acceptor defect. First-principles calculations of the electronic properties of this Ge dangling bond indicate that its energy level approaches the valence band edge of the Si_1−xGe_x layer as the Ge content increases, confirming its acceptor-like nature.     

Ge-doped InxGa1−xAs p−n junctions

The amphoteric properties of Ge in the In_xGa_1?xAscrystals grown by liquid-phase epitaxy are reported. It was found from the Hall measurements that when x < 0·1, the Ge-doped In_xGa_1?xAs was p-type, and when x > 0.1,it was n-type . At the vicinity of x = 0.1, therefore, the In_xGa_1?xAs p?n junction could be made by one growth process. The electrical and photoelectric characteristics of that junction were investigated. The distribution of Ge concentration at the p?n junction, which was obtained from the C-V characteristics, depended on the doping concentrations of Ge. This dependence can be interpreted by analyzing a modified Longini-Green equation. The spectral responses of both photovoltaic effect and electroluminescence showed that in In_0.1Ga_0.9As, Ge atoms gave rise to a heavy compensation effect, and introduced a conduction band tail of states and two kinds of acceptor levels located ～ 20and～ 100meV above the valence band edge.     

Electronic structure and optical transitions in Sn and SnGe quantum dots in a Si matrix

Self-assembled quantum dots in the Si-Ge-Sn system have attracted research attention as possible direct band gap materials, compatible with Si-based technology, with potential applications in optoelectronics. In this work, the electronic structure near the Γ-point and the interband optical matrix elements of strained Sn and SnGe quantum dots in a Si matrix are calculated using the eight-band k.p method, and the competing L-valley conduction band states were found by the effective mass method. The strain distribution in the dots was found within the continuum mechanical model. The bulk band-structure parameters, required for the k.p or effective mass calculation for Sn were extracted by fitting to the energy band structure calculated by the non-local empirical pseudopotential method (EPM). The calculations show that the self-assembled Sn/Si dots, with sizes between 4 and 12 nm, have indirect interband transition energies (from the size-quantized valence band states at Γ to the conduction band states at L) between 0.8 and 0.4 eV, and direct interband transitions between 2.5 and 2.0 eV, which agrees very well with experimental results. Similar good agreement with experiment was also found for the recently grown SnGe dots on Si substrate, covered by SiO₂. However, neither of these is predicted to be direct band gap materials, in contrast to some earlier expectations.     

Spin-orbit splitting dependent resonant third-order nonlinear optical susceptibility in InGaN/GaN multiple quantum wells

For the transition between valence band and conduction band, the third-order nonlinear optical susceptibility χ⁽³⁾ for degenerated four-wave mixing in In_xGa_1−xN/GaN multiple quantum wells (MQWs) has been calculated. The contributions of spin-orbit split-off energy to the resonant third-order nonlinear optical susceptibility of the modes, whose polarization is vertical to the [0 0 1] direction of the MQWs, are discussed in detail. The correlations between the peaks of χ⁽³⁾, which are due to the transitions from the spin-orbit split-off energy level to first conduction subband, and the width of the quantum well and the constituents of the semiconductor material are obtained.     

HfAlOx high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties

Ultra thin HfAlO_x high-k gate dielectric has been deposited directly on Si_1−xGe_x by RF sputter deposition. The interfacial chemical structure and energy-band discontinuities were studied by using X-ray photoelectron spectroscopy (XPS), time of flight secondary ion mass spectroscopy (TOF-SIMS) and electrical measurements. It is found that the sputtered deposited HfAlO_x gate dielectric on SiGe exhibits excellent electrical properties with low interface state density, hysteresis voltage, and frequency dispersion. The effective valence and conduction band offsets between HfAlO_x (E_g = 6.2 eV) and Si_1−xGe_x (E_g = 1.04 eV) were found to be 3.11 eV and 2.05 eV, respectively. In addition, the charge trapping properties of HfAlO_x/SiGe gate stacks were characterized by constant voltage stressing (CVS).     

The short-wavelength edge of intrinsic photoluminescence in diluted GaN<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>As<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript> alloys

It is suggested that the analysis of the short-wavelength edge of intrinsic photoluminescence in diluted GaN _x As_{1 − x} alloys at room temperature be used to study the specific features of the energy dependence of the density of states in the conduction band. It is found that, in the GaN _x As_{1 − x} alloys with x ≥ 0.002, this dependence is inconsistent with the model of the anticrossing band and suggests that there are extra states. These states are thought to be the states formed in nitrogen clusters and interacting with the conduction band. The energy of these states is at least 1.45 eV above the top of the valence band.     

The adsorption effect of C6H5 on density of states for double wall carbon nanotubes by tight binding model

A theoretical approach based on a tight-binding model is developed to study the effects of the adsorption of finite concentrations of C₆H₅ gas molecules on double-walled carbon nanotube (DWCNT) electronic properties. To obtain proper hopping integrals and random on-site energies for the case of one molecule adsorption, the local density of states for various hopping integrals and random on-site energies are calculated. Since C₆H₅ molecule is a donor with respect to the carbon nanotubes and their states should appear near the conduction band of the system, effects of various hopping integral deviations and on-site energies for one molecule adsorption are considered to find proper hopping and on-site energies consistent with expected n-type semiconductor. We found that adsorption of C₆H₅ gas molecules could lead to a (8.0)@(20.0) DWCNT n-type semiconductor. The width of impurity adsorbed gas states in the density of states could be controlled by adsorbed gas concentration.     

Phase formation and texture of nickel silicides on Si1−xCx epilayers

We investigated the phase formation and texture of nickel silicides formed during the reaction of 10 nm sputter deposited nickel with Si_1−xC_x epitaxial layers on Si(1 0 0) substrates, having a carbon content between 0 and 2.5 atomic percent. It was found that both the formation temperature as well as the texture of the metal-rich phases is influenced by the amount of carbon in the Si_1−xC_x layer. To determine the influence of the location of the carbon during the silicidation process we also investigated the reaction of 10 nm nickel on Si(1 0 0) substrates, where carbon was either alloyed in the nickel layer or deposited as an interlayer at the interface between the nickel and the substrate. Depending on the location of the carbon, a different thermal stability of the layer was found.     

Study of electrical and optical properties of CNx thin films deposited by reactive magnetron sputtering

The study concerns the CN_x thin films deposited by Low Pressure Hot Target Reactive Magnetron Sputtering (LP-HTRMS). The thin film resistance changes with relative humidity (RH) and optical properties have been studied in the range of 300-653 K. The temperature coefficients of resistivity changes were −2.5%/K at 300 K and −0.5%/K at 500 K. The activation energy of conductivity E_ρ was found to be 0.21 eV in the case of unannealed sample and 0.44 eV when the sample was annealed at 653 K. The CN_x thin films fastness to light was tested in the range of 200-2500 nm by measuring their transmittance. The calculations of absorption carrying out with Tauc formula proved the dominance of indirect optical transitions with Eg energy of 1.04 eV and direct transitions of Eg 2.05 eV. The UV radiation was fully absorbed and light transmission was ca. 90% in the range from visible radiation to far infrared of 1000-2500 nm. The CN_x thin films showed the high resistance sensitivity to RH changes. At T = 300 K resistance changed from 882 M Ω for 36% RH to 386 k Ω for 85% RH. The CN_x thin films susceptibility to humidity was observed in case of both DC and AC current (100 Hz to 10 kHz) measurements. The Si₃N₄ or SiC buffer adhesive layer was incorporated between CN_x film and substrate and its influence on CN_x electrical properties was observed.     

Band anticrossing in highly mismatched group II-VI semiconductor alloys

We have successfully synthesized highly mismatched Cd_1−yMn_yO_xTe_1−x alloys by high-dose implantation of O ions into Cd_1−yMn_yTe crystals. In crystals with y>0.02, incorporation of O causes a large decrease in the bandgap. The bandgap reduction increases with y; the largest value observed is 190 meV in O⁺-implanted Cd_0.38Mn_0.62Te. The results are consistent with the band anticrossing (BAC) model, which predicts that a repulsive interaction between localized states of O located above the conduction-band edge and the extended states of the conduction band causes the bandgap reduction. A best fit of the measured bandgap energies of the O-ion-synthesized Cd_1−yMn_yO_xTe_1−x alloys using the BAC model for y<0.55 suggests an activation efficiency of only ∼5% for implanted O in Cd_1−yMn_yTe.     

Localized states in Hg3In2Te6: Cr compounds

The effect of chromium doping on the energy spectrum of the density of states N(E) in the band gap of the Hg₃In₂Te₆ semiconductor compound was studied. Although the chromium impurity has no significant effect on the electrical properties and the Fermi level position, it increases the band tail extent and the density of localized states within the band gap E _g . Comparison of the data on the field effect and on light absorption for photon energies hν lower than E _g made it possible to ascertain that the density of states is distributed continuously and rapidly increases near the edges of the valence and conduction bands. The obtained spectra are discussed on the assumption that the chromium content growth increases the structure disorder and the random potential, which increases N(E). It is shown that localized states control the screening length and pin the Fermi level near the midgap and are also responsible for the compensation of impurity ion charges.     

Band offsets at interfaces of (1 0 0)InxGa1−xAs (0 ⩽ x ⩽ 0.53) with Al2O3 and HfO2

The electron energy band alignment at interfaces of In_xGa_1?xAs (0 ? x ? 0.53) with atomic-layer deposited insulators Al₂O₃ and HfO₂ is characterized using combined measurements of internal photoemission of electrons and photoconductivity. The measured energy of the In_xGa_1?xAs valence band top is found to be only marginally influenced by the semiconductor composition. This result suggests that the observed bandgap narrowing from 1.42 to 0.75 eV when the In content increases from 0 to 0.53 occurs mostly through downshift of the semiconductor conduction band bottom. Electron states originating from the interfacial oxidation of In_xGa_1?xAs lead to reduction of the electron barrier at the semiconductor/oxide interface.     

Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped AlxGa1−xN (0?x?1) alloys

The effects of the AlN molar fraction on structural and optical properties of praseodymium implanted Al_xGa_1−xN (0?x?1) layers were investigated. Using photoluminescence and excitation luminescence techniques we are able to observe the intra-4f²³P₁→³H₅ (526 nm) and ³P₀→³F₂ (652 nm) transitions of the Pr³⁺ ion. The red emission peak position shifts to lower energies with increasing Al content in the alloys. The peak full-width at half-maximum increases with the Al content up to x=0.7 due to disorder effects. The implantation damage and Pr-incorporation was investigated by Rutherford backscattering spectrometry doing channelling measurements along the 〈0 0 0 1〉 direction. X-ray diffraction reciprocal space maps show an expansion of the c lattice parameter in the implanted region which is reversed after thermal annealing at 1300 °C.     

Theory of extrinsic and intrinsic heterojunctions in thermal equilibrium

A careful analysis of an abrupt heterojunction consisting of two distinct semiconductors either intrinsic or extrinsic is presented. The calculations apply to a one-dimensional, nondegenerate structure. Taking into account all appropriate boundary conditions, it is shown that the intrinsic Fermi level shows a discontinuity at the interface between the two materials which leads to a discontinuity of the valence band edge ΔE_v equal to the difference in the band gap energies of the two materials. The conduction band edge stays continuous however. This result is independent of possible charged interface states and in sharp contrast to the Anderson model. The reasons for this discrepancy will be discussed.