共查询到19条相似文献,搜索用时 140 毫秒
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硅基铝T形梁MEMS可变电容的设计与模拟 总被引:1,自引:0,他引:1
提出了一种新颖的运用于射频通信系统VCO中的RFMEMS可变电容。该电容使用平行板和T形梁结构,使用硅衬底,整个结构由铝材料组成,结构简单,与集成电路工艺兼容,从而能够实现片上可变电容。通过静电力驱动上极板向下运动,电容值相应地发生改变,当上极板加电压从2.4V变化到4.3V时,电容值从0.25pF变化到0.33pF,变化率为中心电容的27%。使用Coventor软件对该器件进行了模拟,给出的模拟结果包括容量、调节范围、瞬时响应、Pullin电压和运用该可变电容的VCO的电路模拟。 相似文献
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用于射频领域的高调节范围MEMS压控电容 总被引:5,自引:0,他引:5
在分析了传统平行极板MEMS压控电容的基础上,提出了一种新型的高调节范围MEMS压控电容。与传统的平行极板电容不同的是,它由三对极板构成。其中一对是起电容作用的极板,另外两对是控制极板。交流信号通过电容极板传输,而直流控制电压施加在控制极板上。使用有限元分析软件Ansys对该电容进行了模拟,得出其调节范围达214%,大大超出了传统的平行极板电容在调节范围上的自然限制(50%)。另外,设计了该电容的工艺流程。其工艺流程较简单,很容易集成在标准的RF电路中。 相似文献
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在微机械开关与硅IC工艺设计和兼容方面进行了改进,获得了一种可与IC工艺兼容的RF MEMS微机械开关.采用介质隔离工艺技术把这种RF MEMS微机械开关制作在绝缘的多晶硅衬底上,实现了与IC工艺兼容;采用在金属膜桥的端点附近刻蚀一些孔的优化方法,降低了RF MEMS微机械开关的下拉电压.用TE2819电容测试设备测试开关的电容,测得开关的开态电容、关态电容和致动电压分别为0.32pF、6pF和25V.用HP8753C网络分析仪对RF MEMS微机械开关进行了RF特性测试,得出RF MEMS微机械开关在频率1.5GHz下关态的隔离度为35dB,开态的插入损耗为2dB,用示波器测得该开关的开关速度为3μs. 相似文献
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平面叉指电容作为电路系统中的重要器件,对电路性能影响极其重要。本文在50μm厚度双面覆铜的液晶聚合物(Liquid Crystal Polymer,LCP)基板上加工了多款平面叉指电容,系统研究了平面叉指电容的叉指长度、宽度和间距的变化对其电容值的影响规律。结果表明:叉指长度从3 mm增加到4 mm,叉指电容容值增加1.63 pF;叉指宽度从0.2 mm增加到0.3 mm,叉指电容容值增加2.35 pF;叉指间距从0.1 mm增加到0.2 mm,叉指电容容值减少0.75 pF。通过集总参数等效,建立了平面叉指电容的等效电路,分析了等效电路中集总器件和不同平面叉指电容物理结构参数的对应关系,为LCP工艺中电容的设计提供了技术参考。 相似文献
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A capacitor multiplier with a high multiplication factor and low power consumption is proposed to integrate a large capacitor of a phase-locked loop (PLL) loop filter in a small chip area. The proposed capacitor multiplier makes capacitance of 516.8 pF using an on-chip capacitor of 7.95 pF with current consumption of 100 μA. An integer-N PLL with a channel space of 1 MHz was fabricated with a 0.18 μm CMOS technology to employ the proposed capacitor multiplier. 相似文献
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Micromachined varactor with wide tuning range 总被引:1,自引:0,他引:1
A micromachined variable capacitor that achieves a wide tuning range is proposed. The device, which was fabricated in a polysilicon surface micromachining process, has a tuning range of 25% and a quality factor of 9.6 at 1 GHz when the capacitance is tuned to 4pF 相似文献
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研究了开关电容DC-DC变换器输出电压与电容的关系,分析了变换器输出电压波纹产生的原因.针对变换器中大电容难集成的问题,提出了一种基于跨导放大器和第二代电流传输器的有源电容倍增器的新型拓扑结构.该电路只用较少的元件就可以实现开关电容变换器中的浮地和接地电容.以二阶开关电容DC-DC变换器为例,用PSPICE软件分别对采用了有源电容倍增器的新型结构和传统结构进行了仿真.结果显示,基于有源电容倍增器的开关电容变换器仅用100pF电容就等效了200nF电容的输出性能,而且具有更低的输出电压波纹. 相似文献
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《Microelectronics Journal》2007,38(8-9):855-859
We used simple microelectromechanical systems (MEMS) technology to fabricate low-voltage-controlled variable capacitors with high-quality factor. The surface profile of the variable capacitor at different values of applied voltage is measured using WYKO NT1100 optical surface profiler. The pull-in voltage of the variable capacitor was below 15 V. The capacitance and quality factor at 1 GHz are 0.792 and 51.6 pF. The pull-in voltage is 13.5 V, the tuning ratio of the capacitor is more than 1.31:1. 相似文献
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CMOS technology scaling opens up the possibility of designing variable capacitors based on a metal oxide semiconductor structure with improved tuning range and quality factor. This is due to an increase in the oxide capacitance and a reduction in the parasitic resistance. A prototype metal-oxide-semiconductor (MOS) variable capacitor of 3.1 pF nominal value has been realized in a 0.35-μm standard CMOS process. A factor two capacitance change has been achieved for a 2-V variation of the controlling voltage. The varactor Q ranges from 17 to 35, at 1.8 GHz 相似文献
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A novel capacitance scaling technique is proposed to reduce on-chip capacitor area using a dual-path self-biased current-mode filter. The capacitor multiplier is obtained by the relative ratio of charge-pump currents I/sub cp2//(I/sub cp2/-I/sub cp1/), rather than the scaling ratio I/sub cp2//I/sub cp1/. Compared with the original current-mode filter, the demonstrated loop filter of 250 pF capacitance is achieved with only 25 pF (90% die area saving), and the resistor area is reduced by 50% owing to reuse of the degenerated resistor R/sub G/. 相似文献