Layer structure of Zn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript>x</Subscript>Se films grown by vapor-phase epitaxy from metal-organic compounds on Cd<Subscript>0.92</Subscript>Zn<Subscript>0.08</Subscript>S(0001) substrates

The structure of Zn_1?xCd_xSe films, which were grown by vapor-phase epitaxy from metal-organic compounds on a Cd_0.92Zn_0.08S(0001) substrate, was investigated by X-ray diffractometry. For both cubic and hexagonal phases, asymmetric reflections were selected. These reflections make it possible not only to reliably determine the presence of these phases in the film, but also to estimate the dimensions of coherent X-ray scattering regions and (or) variation in the lattice parameters in the intergrowth plane. The ZnSe films preferentially consist of twinned interlayers of the cubic phase, 200–250 Å thick, and with a low content of the hexagonal phase. In contrast, the hexagonal phase with a small number of cubic interlayers predominates in CdSe films. The thickness of the interlayers of the cubic phase in Zn_1?xCd_xSe decreases, whereas the concentration of the hexagonal phase increases for low x values with an approximately identical development of both phases for x=0.15–0.20.     

Specific features of conductivity of Cd<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>x</Subscript>Te and Cd<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>x</Subscript>Te single crystals

The electrical characteristics of p-type Cd_1?xZn_xTe (x=0.05) and Cd_1?xMn_xTe (x=0.04) single crystals with a resistivity of 10³–10¹⁰ Ω cm at 300 K are studied. The conductivity and its variation with temperature are interpreted on the basis of statistics of electrons and holes in a semiconductor with deep acceptor impurities (defects), with regard to their compensation by donors. The depth of acceptor levels and the degree of their compensation are determined. The problems of attaining near intrinsic conductivity close to intrinsic are discussed.     

Electron spin resonance in Cd<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>x</Subscript>Te and Zn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>x</Subscript>Te compounds

Electron spin resonance in semimagnetic Cd_1?xMn_xTe (0<x<0.7) and Zn_1?xMn_xTe (0<x<0.53) compounds was studied at temperatures of 77 and 300 K. It is found that two types of paramagnetic centers exist in Zn_1?xMn_xTe, one of which is related to Mn²⁺ ions and the other is attributed to structural defects in the crystals.     

Mechanisms of recombination of nonequilibrium charge carriers in epitaxial Cd<Subscript>x</Subscript>Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Te (<Emphasis Type="Italic">x</Emphasis> = 0.20–0.23) layers

The experimental temperature dependences of the photosensitivity and the data on the lifetime of nonequilibrium charge carriers in epitaxial Cd_xHg_1?x Te layers with x = 0.20–0.23 were used to show that, in the region of intrinsic and extrinsic conductivity in n-type films grown by molecular beam epitaxy, CHCC Auger recombination is the prevailing recombination mechanism. At the same time, in p-type films grown by liquid-or vapor-phase epitaxy, it is observed that, in the region of extrinsic conductivity, CHLH Auger recombination competes with Shockley-Read recombination. The n-type films grown by molecular beam epitaxy contain a much lower concentration of recombination centers than the p-type films grown by liquid-or gasphase epitaxy.     

Planar defects and double-domain epitaxy in epitaxial YSi<Subscript>2−x</Subscript> and ErSi<Subscript>2−x</Subscript> thin films on Si substrates

Interfacial reactions of Y and Er thin films on both (111)Si and (001)Si have been studied by transmission electron microscopy (TEM). Epitaxial rare-earth (RE) silicide films were grown on (111)Si. Planar defects, identified to be stacking faults on planes with 1/6 displacement vectors, were formed as a result of the coalescence of epitaxial silicide islands. Double-domain epitaxy was found to form in RE silicides on (001)Si samples resulting from a large lattice mismatch along one direction and symmetry conditions at the silicide/(001)Si interfaces. The orientation relationships are [0001]RESi_2−x// Si, RESi_2−x//(001)Si and [0001]RESi_2−x/ Si, RESi_2−x//(001)Si. The density of staking faults in (111) samples and the domain size in (001) samples were found to decrease and increase with annealing temperature, respectively.     

Study of the electrical properties of Cd<Subscript>x</Subscript>Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Te

On the basis of the temperature and field dependences of the Hall coefficient R _H , it was found that samples with a low electron density are, as a rule, compensated, and the degree of compensation changes upon thermal conversion of the conductivity of the sample to p type. For n-Cd_xHg_1?xTe, the ionization energy of the donor level was found from the temperature dependences of resistivity ρ(T): E _d =24–32 meV. For the same samples, after their thermal conversion to p type, the ionization energies of acceptors, which are related to doubly charged vacancies V _Hg ⁺⁺ , were determined: E _a =32 and 48 meV. In addition, a deep level E _t , related to an unknown amphoteric impurity, was found (E _t ?E _v ≈0.7E _g ).     

The investigation of structural perfection of Cd<Subscript>x</Subscript>Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Te/CdZnTe epitaxial layers by the Raman scattering method

The distribution and character of variations in the intensity of lattice vibrations that are induced by structural defects of various nature over the layer depth of Cd_xHg_1?xTe/CdZnTe epitaxial structures are investigated. The results are discussed in detail. Experimental results are obtained by the Raman scattering method in a micromode over the cleaved surface of the sample formed normally to the [111] face immediately prior to measurements. Special attention is paid to the possibility of obtaining information on the presence of structural defects in the cation sublattice and tellurium precipitates in Cd_xHg_1?xTe epitaxial layers.     

Investigation of MBE-Growth of Mid-Wave Infrared Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se

Undoped mid-wave infrared Hg_1?xCd_xSe epitaxial layers have been grown to a nominal thickness of 8–14 μm on GaSb (211)B substrates by molecular beam epitaxy (MBE) using constant beam equivalent pressure ratios. The effects of growth temperature from 70°C to 120°C on epilayer quality and its electronic parameters has been examined using x-ray diffraction (XRD) rocking curves, atomic force microscopy, Nomarski optical imaging, photoconductive decay measurements, and variable magnetic field Hall effect analysis. For samples grown at 70°C, the measured values of XRD rocking curve full width at half maximum (FWHM) (116 arcsec), root mean square (RMS) surface roughness (2.7 nm), electron mobility (6.6?×?10⁴ cm² V^?1 s^?1 at 130 K), minority carrier lifetime (～?2 μs at 130 K), and background n-type doping (～?3?×?10¹⁶ cm^?3 at 130 K), indicate device-grade material quality that is significantly superior to that previously published in the open literature. All of these parameters were found to degrade monotonically with increasing growth temperature, although a reasonably wide growth window exists from 70°C to 90°C, within which good quality HgCdSe can be grown via MBE.     

Modification of Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript>x</Subscript>Te properties by low-energy ions

We present an overview concerning the modification of properties of HgCdTe solid solutions and related Hg-containing materials under surface treatment with low-energy (60–2000 eV) ion beams. The conditions for conductivity-type conversion in p-material, dose, and time dependences of the depth of the conversion layer are analyzed. The modification of electrical properties of n-type material subjected to ion-beam treatment is discussed. The suggested mechanisms of conductivity-type conversion under low-energy ion treatment of HgCdTe doped with vacancies or acceptor impurities are regarded. Properties of p-n junctions produced by this technique are reviewed, and electrical and photoelectric parameters of HgCdTe IR photodetectors fabricated by low-energy ion treatment are analyzed. Several examples of novel device structures developed with the use of the method are presented.     

Electrical activity of dislocations and point defects of deformation origin in Cd<Subscript>x</Subscript>Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Te crystals

The generation of dislocations with even a relatively low density (N_dis≤10⁷cm^?2) leads to significant variations in the kinetic coefficients of Cd_xHg_1?xTe (x=0.20–0.21) crystals. In n-type crystals, a substantial decrease in electron mobility takes place along with a marked growth in electron concentration. For p-type crystals, the transition from the activation conductivity to the metal one is observed in the low-temperature range of 4.2–40 K, as is the alternating-sign behavior of the Hall coefficient R _H depending on temperature and magnetic-field strength. A dominant role in the observed modifications is played by electronic states of point defects formed during the dislocation motion rather than the dislocations themselves. The totality of the data can be explained in terms of the formation of connected channels of an opposite-type conductivity in the form of a three-dimensional dislocation network in the matrix of the main crystal.     

Photoluminescence of Hg<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te based heterostructures grown by molecular-beam epitaxy

Photoluminescence (PL) of Hg_{1 − x} Cd _x Te-based heterostructures grown by molecular-beam epitaxy (MBE) on GaAs and Si substrates has been studied. It is shown that a pronounced disruption of the long-range order in the crystal lattice is characteristic of structures of this kind. It is demonstrated that the observed disordering is mostly due to the nonequilibrium nature of MBE and can be partly eliminated by postgrowth thermal annealing. Low-temperature spectra of epitaxial layers and structures with wide potential wells are dominated by the recombination peak of an exciton localized in density-of-states tails; the energy of this peak is substantially lower than the energy gap. In quantum-well (QW) structures at low temperatures, the main PL peak is due to carrier recombination between QW levels and the energy of the emitted photon is strictly determined by the effective (with the QW levels taken into account) energy gap.     

Photoelectric properties of surface-barrier structures based on Zn<Subscript>2−2<Emphasis Type="Italic">x</Emphasis></Subscript>Cu<Subscript>x</Subscript>In<Subscript>x</Subscript>Se<Subscript>2</Subscript> films obtained by selenization

p-Zn_2?2xCu_xIn_xSe₂ (ZCIS) polycrystalline films 1–2 ¼m thick have been obtained by selenization. Photosensitive surface-barrier In/p-ZCIS structures are fabricated based on the films. The spectra of relative quantum efficiency of the structures obtained by selenization of the initial ZnSe/(Cu-In) and (Zn-Cu-In) films are examined. The optical band gap of the Zn_2?2xCu_xIn_xSe₂ films is determined. Conclusions are reached on the prospects for the use of the obtained films as broadband photoconverters of natural optical radiation.     

Local symmetry of the Pb<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Sn<Subscript>x</Subscript>Se lattice near the zero-gap state

By applying Mössbauer spectroscopy with isotopes ⁸³Kr and ¹¹⁹Sn to Pb_1?xSn_xSe solid solutions, it is shown that the local symmetry and electronic structure of anionic and cationic lattice sites remain unchanged during the transition to the zero-gap state.     

Alternating current conductivity and electron spin resonance of the Cd<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Fe<Subscript>x</Subscript>Te alloys

The results of measurements of frequency dependences of conductivity and electron spin resonance (ESR) of the Cd_{1 ? x} Fe_xTe alloys (0.01 ≤ x ≤ 0.05) at room temperature are presented. It is found that, in the composition range 0.003 ≤ x ≤ 0.05, a new asymmetric ESR absorption line with g ≈ 3.9 emerges, and its hysteresis manifests itself while the samples are magnetized. The line with g ≈ 3.9 is attributed to the charge state 3⁺ of the Fe atoms, which occurs in tetrahedra with three Fe atoms.     

Complex Refractive Indices of Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>O Thin Films Grown by Molecular Beam Epitaxy

The complex refractive indices of Cd _x Zn_1−x O thin films were determined by transmission spectrophotometry. Transmission spectra were modeled from 375 nm to 800 nm for samples having cadmium concentrations ranging from 2% to 77%. The transparent and absorptive regimes were fitted separately by Sellmeier and Forouhi–Bloomer models, respectively. Real refractive indices of Cd _x Zn_1−x O shift to higher values in the transparent region and the optical absorption edge shifts to longer wavelengths with increasing cadmium concentration. Spectroscopic ellipsometry was carried out on one sample from λ = 190 nm to 1.8 μm. Comparison between the two methods shows that the results are in general agreement.     

Dependence of scattering of quasi-two-dimensional electrons by acoustic phonons on the parameters of a GaAs/Al<Subscript>x</Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>As superlattice

The time of relaxation of quasi-two-dimensional electrons in a GaAs/Al_xGa_1?xAs superlattice in the case of scattering by acoustic phonons was calculated numerically in relation to the quantum-well width and the width and height of the potential barrier. The probability of scattering for electrons of the lower miniband was calculated using an approximate envelope wave function without consideration of the dispersion of the periodic component of the Bloch function in relation to the wave vector. A comparative analysis of the calculated relaxation times and the values obtained using the well-known approximate formula was performed.     

Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> buffer layers

Atomic-force microscopy, micro-Raman spectroscopy, and high resolution X-ray diffraction are applied to study the spatial ordering in single layers of SiGe nanoislands grown on a strained Si_{1 − x} Ge _x buffer sublayer. It is shown that, apart from stimulating the spatial ordering of nanoislands, the introduction of a Si_{1 − x} Ge _x sublayer leads to an enhanced role for interdiffusion processes. An unusually high increase in the volume of nanoislands in the process of the epitaxy is related to the anomalously strong diffusion from the buffer sublayer into the islands that is induced by nonuniform fields of elastic strains. The anisotropy of the islands shape and spatial ordering is discussed in terms of the anisotropy of the diffusion processes in spatially nonuniform fields of elastic strains.     

Investigation of Multicarrier Transport in LPE-Grown Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te Layers

A detailed study is presented of multicarrier transport properties in liquid-phase epitaxy (LPE)-grown n-type HgCdTe films using advanced mobility spectrum analysis techniques over the temperature range from 95 K to 300 K. Three separate electron species were identified that contribute to the total conduction, and the temperature-dependent characteristics of carrier concentration and mobility were extracted for each individual carrier species. Detailed analysis allows the three observed contributions to be assigned to carriers located in the bulk long-wave infrared (LWIR) absorbing layer, the wider-gap substrate/HgCdTe transition layer, and a surface accumulation layer. The activation energy of the dominant high-mobility LWIR bulk carrier concentration in the high temperature range gives a very good fit to the Hansen and Schmit expression for intrinsic carrier concentration in HgCdTe with a bandgap of 172 meV. The mobility of these bulk electrons follows the classic μ ~ T ^−3/2 dependence for the phonon scattering regime. The much lower sheet densities found for the other two, lower-mobility electron species show activation energies of the order of ~20 meV, and mobilities that are only weakly dependent on temperature and consistent with expected values for the wider-bandgap transition layer and a surface accumulation layer.     

Investigating the Electron–Phonon Coupling of Molecular Beam Epitaxy-Grown Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se Semiconductor Alloys

Using spectroscopic ellipsometry, the temperature-dependence of the dielectric functions of a series of Hg_1?xCd_xSe thin films deposited on both ZnTe/Si(112) and GaSb(112) substrates were investigated. Initially, for each sample, room-temperature ellipsometric spectra were obtained from 35 meV to 6 eV using two different ellipsometers. Subsequently, ellipsometry spectra were obtained from 10 K to 300 K by incorporating a cryostat to the ellipsometer. Using a standard inversion technique, the spectroscopic ellipsometric data were modeled in order to obtain the temperature-dependent dielectric functions of each of the Hg_1?xCd_xSe thin films. The results indicate that the E₁ critical point blue-shifts as a function of Cd-alloy concentration. The temperature-dependence of E₁ was fitted to a Bose–Einstein occupation distribution function, which consequently allowed us to determine the electron–phonon coupling of Hg_1?xCd_xSe alloys. From the fitting results, we obtain a value of 17 ± 2 meV for the strength of the electron–phonon coupling for Hg_1?xCd_xSe alloy system, which compares nominally with the binary systems, such as CdSe and CdTe, which have values around 38 meV and 16 meV, respectively. This implies that the addition of Hg into the CdSe binary system does not significantly alter its electron–phonon coupling strength. Raman spectroscopy measurements performed on all the samples show the HgSe-like transverse optic (TO) and longitudinal optic (LO) phonons (～?130 cm^?1 and?～?160 cm^?1, respectively) for all the samples. While there is a slight red-shift of the HgSe-like TO peak as a function of the Cd-concentration, HgSe-like LO peak does not significantly change with the alloy concentration.     

Defects in the crystal structure of Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Te layers grown on the Si (310) substrates

Microstructure of the CdTe (310) and CdHgTe (310) layers grown by molecular-beam epitaxy on Si substrates has been studied by the methods of transmission electron microscopy and selective etching. It is established that formation of antiphase domains in the CdHgTe/CdTe/ZnTe/Si(310) is determined by the conditions of formation of the ZnTe/Si interface. Monodomain layers can be obtained by providing conditions that enhance zinc adsorption. An increase in the growth temperature and in the pressure of Te₂ vapors gives rise to antiphase domains and induces an increase in their density to the extent of the growth of poly-crystals. It is found that stacking faults exist in a CdHgTe/Si(310) heterostructure; these defects are anisotropically distributed in the bulk of grown layers. The stacking faults are predominantly located in one (111) plane, which intersects the (310) surface at an angle of 68°. The stacking faults originate at the ZnTe/Si(310) interface. The causes of origination of stacking faults and of their anisotropic distribution are discussed.