等离子体喷涂氧化钛涂层的生物活性研究

以纳米TiO₂粉末为喷涂原料, 采用大气等离子体喷涂技术在医用钛合金上制备氧化钛涂层. 利用酸和碱溶液对氧化钛涂层表面进行生物活化处理, 体外模拟体液浸泡实验考察涂层的生物活性. 采用XRD、SEM、FTIR、EDS等测试技术对改性前后氧化钛涂层的生物活性进行表征. 结果表明: 氧化钛涂层和钛合金基体的结合强度较高, 其值高达40MPa, 涂层的耐模拟体液腐蚀性优于钛合金. 酸和碱溶液表面改性后的氧化钛涂层经模拟体液浸泡可在其表面生成含有碳酸根的羟基磷灰石(类骨磷灰石), 显示良好的生物活性.     

高分子薄膜等离子体表面改性的研究

本文采用不同的等离子体改性Ｐｉ、ＰＥＴ、ＰＰ薄膜，发现经处理的薄膜的表面电阻（Ｒｓ）降低了２￣４个数量级，材料的介电损耗（ｔｇｏ）和介电常数（ε）也发生了变化。表面薄膜刻蚀深度随放电时间的延长而增加。红外分析证明在薄膜表明结构中引入了极性基团。     

氧化钛薄膜的血液相容性研究

本文研究了离子束增强沉积技术制备的氧化钛薄膜的血液相容性与薄膜的结构，成分，表面能，以及蛋白质在薄膜表面的吸附之间的关系。实验表明，血液相容性是表面能和功函数共同作用的结果。表面能决定蛋白质的吸附量，功函数决定蛋白质的变性。     

聚四氟乙烯薄膜等离子体表面改性的研究

利用等离子体表面处理和化学接枝的方法对聚四氟乙烯（ＰＴＦＥ）薄膜表面进行了化学改性。利用ＸＰＳ研究了改性后的ＰＴＦＥ薄膜的表面结构和价键状态，并通过接触角的测定研究了表面改性对薄膜亲水性的影响。研究结果发现ＰＴＦＥ薄膜经等离子体处理后，薄膜表面的Ｃ－Ｆ键发生了断裂，形成了Ｃ－Ｃ键、Ｃ－Ｈ键及Ｃ－Ｏ键；等离子体处理后的薄膜再经丙烯酸化学处理，强亲水性的丙烯酸基被接枝到ＰＴＦＥ表面，使得ＰＴＦＥ薄膜获     

掺杂氧化钛薄膜的制备与血液相容性研究

本文利用磁控溅射技术制备了Ta5+掺杂的TiO2 薄膜 ,并采用动态凝血时间、血小板粘附及血小板变形等方法进行了薄膜材料的血液相容性测试。结果表明 ,Ta5+掺杂的TiO2 薄膜具有良好的血液相容性 ,且在一定的掺杂量条件下具有最佳值。     

高温退火处理对低温同向热解碳表面氧化钛薄膜改性的影响

采用非平衡磁控溅射设备在热解碳表面沉积氧化钛薄膜,并置于超高真空环境中进行高温退火处理。利用X射线衍射评价薄膜的晶体结构;使用台阶仪分析退火前后薄膜表面曲率变化;采用纳米划痕法评价薄膜与基体之间的结合力。实验结果表明,高温退火处理不会改变氧化钛薄膜的相结构,仅使薄膜晶粒尺寸长大,结晶更完整;台阶仪扫描结果显示经过高温处理后薄膜表面发生的变形减小,显示出薄膜内应力减小;纳米划痕测试分析得出,高温退火处理可以提高薄膜与基体之间的膜基结合力。     

氩等离子体处理对ZnO薄膜阻变效应的影响

本文研究了氩等离子体处理对ZnO薄膜阻变效应的影响,发现等离子体处理可以使薄膜表面平整,并且增加薄膜中的缺陷浓度。以等离子体处理后的ZnO薄膜作为介质层,在Pt/ZnO/Pt三明治结构中观察到无电形成过程的阻变效应。本文研究表明,氩等离子体处理是消除氧化物阻变效应电形成过程的有效手段。     

RF-Ar等离子体对聚乙烯薄膜的表面改性

采用射频辉光放电氩等离子体,在工作压力为20 Pa、功率为30W的条件下对低密度聚乙烯薄膜进行了不同时间的表面处理。借助静态接触角、X射线光电子能谱仪、原子力显微镜、差示扫描量热仪对薄膜改性前后的性能进行了表征及分析。研究结果表明:氩等离子体短时间(20 s)处理便可以有效改善薄膜表面的亲水性,处理时间大于20 s后接触角的变化并不明显;处理后的薄膜表面引入了大量的含氧及少量的含氮官能团;薄膜表面所形成的交联层阻挡了极性基团的翻转,有效延长了接触角的时效性;薄膜的表面形貌和结晶度发生了变化。     

等离子浸没离子注入法合成氧化钛/氮化钛梯度薄膜与控制研究

使用等离子浸没离子注入和反应沉积（Plasma immersion ion implantation and reaction deposition,PIIID）的方法合成了氧化钛／氮化钛梯度薄膜。研究开发了一套由可编程逻辑控制器（Programmable Logical Control,PLC）、D／A和质量流量控制器（Mass Flow Control,MFC）组成的智能控制系统，控制金属源阴极的推进和气体成分的改变。现场使用表明，整个控制系统稳定、可靠，具有较强的抗干扰能力，能够灵活方便地设置相应的技术参数。通过显微硬度计测试，针盘式摩擦磨损试验和结合力测试，分析了控制合成的薄膜的机械性能。采用X射线衍射、扫描电镜和SMIS，分析与评价了薄膜的特性。结果表明，控制合成的Ti-O/Ti-N梯度薄膜具有良好的机械性能。     

水解沉积--阳极氧化法形成Al-Ti复合氧化膜

通过含钛无机盐的水解沉积及高温热处理,铝电极箔表面形成高介电常数氧化物———TiO2 膜层,然后在己二酸铵溶液中恒电流阳极氧化,形成 Al Ti复合氧化膜。AFM观测了含钛无机盐水解沉积过程中,铝电极箔表面形貌的变化。在铬酸和磷酸的混合溶液中测试了氧化膜的耐电压随溶解时间的变化。通过SIMS检测了复合氧化膜中 Al3 、Ti4 的强度随溅射时间的变化。膜溶解试验及 SIMS 检测结果表明Al Ti复合氧化膜由 3 层组成,外层和中间层为 Al、Ti、O不同配比的混合物,内层则为纯的 Al2O3。铝电极箔比容随氧化膜耐电压的变化关系曲线表明,60V耐电压下,Al Ti复合氧化膜的比容提高率为51%。     

钛氧膜生物相容性与生物活性的研究与应用

对钛氧膜的生物相容性和生物活性的研究及应用进行了评述.重点讨论了钛氧膜的制备方法、钛氧膜的活化处理方式以及钛氧膜在心血管材料和骨替代材料中的应用前景.     

Deposition of zinc oxide thin films by an atmospheric pressure plasma jet

The ZnO thin film deposition process by using an atmospheric pressure (AP) plasma jet is studied. In this process, nebulized ZnCl₂ solution is sprayed into the downstream of the nitrogen plasma jet to perform thin film deposition. X-ray diffraction analysis confirms that this AP jet has the capability to convert ZnCl₂ solution to well-crystallized ZnO thin films with a hexagonal wurtzite structure in a short time. This film exhibits a smooth and mirror-like appearance visually. Scanning electron microscopy and atomic force microscopy show that the deposited film is dense and continuous with a root mean square surface roughness of 8.6 nm. A 1.29 nm/s deposition rate is obtained using this process. Given the fast deposition rate, we believe that both the temperature and the reactivity of the plasma play important roles. A ZnO film on a larger substrate is fabricated, which suggests the process capability in large area and continuous processing applications.     

Fabrication of low resistivity tin-doped indium oxide films with high electron carrier densities by a plasma sputtering method

Tin-doped indium oxide (ITO) films fabricated on glass substrates using a hot-cathode plasma sputtering method exhibited low resistivity of 9.7 × 10⁻⁵ Ω cm, which is due to a high carrier density of 2.1 × 10²¹ cm⁻³. The change in the number of carriers, N, as a function of film thickness d, strongly suggests that oxygen extraction in the initial stages of ITO film growth on the glass substrate surface, creates oxygen vacancies as an electron carrier source for improvement in the resistivity of the films.     

Effect of oxygen plasma treatment on low dielectric constant carbon-doped silicon oxide thin films

Low dielectric constant (low k) carbon-doped silicon oxide (CDO) films are obtained by plasma-enhanced chemical vapor deposition. The k value of the as-deposited CDO film is less than 2.9. However, the k value may be changed during the integration process. In integration process, photoresist removal is commonly implemented with oxygen plasma ashing or by wet chemical stripping. In this work, the impact of oxygen plasma treatment has been investigated on the quality of the low-k CDO films. Different plasma treatment conditions, including variable pressure, r.f. power, and treatment time were employed. A variety of techniques, including X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy, time-of-flight secondary ion mass spectrometry (TOF-SIMS), atomic force microscopy (AFM), and scanning electron microscope (SEM) were used to analyze the effect of the oxygen plasma post-treatment on the low-k CDO films. The result indicates that oxygen plasma will damage the CDO film by removing the entire carbon content in the upper part of the film with increasing treatment time, which results in an increase in the k value and film thickness loss. Our result also confirms that with low r.f. power and low pressure, the damage will be less.     

Hemocompatibility of lanthanum oxide films fabricated by dual plasma deposition

Lanthanum oxide films were fabricated using dual plasma deposition. X-ray photoelectron spectroscopy (XPS) showed that La existed in the + 3 oxidation state. X-ray diffraction (XRD) revealed a (101) oriented hexagonal structure. Blood platelet adhesion tests and endothelial cell cultures were used to evaluate the hemocompatibility of the as-deposited films. Scanning electron microscopy (SEM) and optical microscopy were employed to evaluate the surface morphology of the blood platelets and endothelial cells on the films. The results showed that the number of adhered, aggregated and morphologically changed platelets was reduced compared to that observed on low-temperature isotropic carbon (LTIC). Endothelial cells culture tests indicated good adhesion and proliferation of human umbilical vein endothelial (HUVE) cells in vitro. Our study suggests that lanthanum oxide films are potential blood-contacting biomedical materials.     

Surface modification of titanium oxide in pulse-modulated induction thermal plasma

Recently, it was reported that RF induction plasma of a pulse-modulated operating mode had been successfully generated, for the first time, at a sufficiently high electric power level for materials processing. The unique conditions in the plasma, such as a non-equilibrium situation at the instance of pulse-on and -off and the increase of chemically reactive radical species, as well as the time-dependent change of plasma temperature, is expected to offer the unique physico–chemical conditions necessary for materials processing. As the first step of the work directed to materials processing, the thermal and chemical interactions between plasma and solid materials were examined for both cases of pulse-modulated and continuous modes. Green compacts of titanium dioxide (TiO₂), whose characteristics strongly depend on the formation of lattice defects and the incorporation of hydrogen, were treated in Ar---H₂ plasma of continuous and pulse-modulated generation modes. The oxide disks were placed at the downstream of plasma flow. The sample position and the plasma generation pressure were changed as processing parameters. The plasma-treated specimens were characterized by X-ray diffractometry and the hydrogen content was measured. The plasma treatment gave a thermal effect, rather than a chemical one, on the surface of oxide specimens. The oxides were thermally reduced by the plasma treatment and showed a change of color at the surface, while XRD did not show a change of crystal structure. Comparing specimens treated in the pulse-modulated plasma with those treated in the continuous plasma, the disk specimens had less of a thermal effect on the plasma.     

Surface treatments of indium tin oxide films by using high density plasma

We investigated the effects of various surface treatments on the work function and chemical composition of an indium tin oxide (ITO) surface. Ultraviolet photoelectron spectroscopy (UPS) was used to measure the work function of ITO. X-ray photoelectron spectroscopy (XPS) was used to study the electron structures of ITO surface. We performed surface treatments on ITO using O₂ plasma and HCl solution. Our UPS/XPS analysis indicates increases in the work functions by O₂ plasma treatments. It is known that the Fermi energy level is controlled by the donor concentration, and thus the Fermi energy level is shifted toward the valence band minimum.     

微图形氧化钛薄膜表面内皮细胞生长行为研究

采用非平衡磁控溅射沉积技术制备微图形化的Ti-O薄膜,通过在微图形化的薄膜表面培养内皮细胞的方法,研究了微图形及表面物理化学性能对细胞生长行为的影响.结果表明,微图形尺寸减小到某一尺度范围之内会对内皮细胞在材料表面的生长起到接触引导作用,促进细胞在其表面生长;同时,表面成分、结构和表面能参数γsp/γsd也在一定程度上影响内皮细胞的生长行为.采用溅射技术使材料表面具有一定特征的表面微观形貌,能够引导和促进细胞在材料表面的生长,溅射技术制备微图形化表面可能成为等离子体生物材料表面改性的一个新的技术手段.     

Photocatalytic oxidation of nitric oxide with immobilized titanium dioxide films synthesized by hydrothermal method

Gas-phase photocatalytic oxidation (PCO) of nitric oxide (NO) with immobilized TiO2 films was studied in this paper. The immobilized TiO2 films were synthesized by hydrothermal method. The characterization for the physicochemical properties of catalysts prepared under different hydrothermal conditions were carried out by X-ray diffraction analysis (XRD), transmission electron microscopy (TEM), high resolution-transmission electron microscopy (HR-TEM), Brunauer-Emmett-Teller measurements (BET) and scanning electron micrograph (SEM). It was found that the PCO efficiency of the catalyst was mainly depended on the hydrothermal conditions. The optimal values of hydrothermal temperature and hydrothermal time were 200 degrees C and 24 h, respectively. Furthermore, it was also known that the photocatalytic efficiency would decrease remarkably when the calcination temperature was over than 450 degrees C. Under the optimal conditions (hydrothermal condition: 200 degrees C for 24 h; calcination temperature: 450 degrees C), the photocatalytic efficiency of catalyst could reach 60% higher than that of Degussa P25.