基于Ansys/Flotran的夹持型超薄切片染色板优化设计

电镜超薄切片样品制备中,重金属染色是不可缺少的关键步骤.本文基于夹持型超薄切片染色板工作原理,建立4种不同染色孔形状的染色板模型(染色孔底部与侧壁夹角90°,105°,120°和135°),对水流冲洗染色板过程进行二维模拟,采用Ansys/Flotran方法计算超薄切片表面的实际冲洗液流速度和湍流动能.结果表明,随着染色孔底部与侧壁夹角的增加,超薄切片表面的水流冲洗速度逐渐增加,且不同染色孔内的湍流动能逐渐变得均匀,在染色孔的壁与底面的夹角为105°时,湍流动能最大,即水流与超薄切片表面残余的重金属染液之间交换程度最大,此结构被确定为最优化设计.根据计算流体动力学研制的产品,操作简便、安全有效,为提高透射电镜的样品染色效率和质量提供理论基础.     

一种简易的超薄切片染色器

本文介绍了一种简易的超薄切片染色器的制作和使用方法。各实验室都有制作比染色器所需的材料,其制作和使用方法简单。可进行铀、铅单、双重染色。染色效果良好。在透射电镜生物样品超薄切片染色(尤其铅染)过程中,往往由于CO_2的影响,常在超薄切片上产生碳酸铅沉淀,使切片受到污染,影响观察,严重时无法观察使之前功尽弃。我们参考LKB2160型染色机的工作原理和染色过程,结合工作中的实践,自制了一种简易的染色器,可进行铀、铅单、双重染色。使用此染色器,可使超薄切片的染色达到防污染、规格化、省时间的效果。现将其制作及使用方法介绍如下:     

微波辐射超薄切片快速染色法

本文介绍一个微波辐射超薄切片快速染色法。该方法与常规染色方法相比具有以下突出优点:染色速度快且操作简便,整个染色过程可在数分钟内完成;经微波辐射染色处理的动植物组织切片染色均匀,污染少,反差比常规染色法稍强。动植物组织切片微波辐射染色的最佳辐射时间有所不同,铀染色动植物组织切片最佳辐射时间均为30秒;铅染色动物组织切片最佳辐射时间为30秒,而植物组织切片为20秒。染色液经微波辐射后的温度应控制在20～40℃。     

透射电镜超薄切片滴管式染色法的改进

在应用透射电镜超薄切片滴管式染色法的基础上,对其进行了一些改进,使其操作更为方便高效,在避免染色操作中铅污染的同时也很好地避免了铀污染,取得了比较好的效果。     

一种高效的超薄切片染色法

本文介绍使用“连通式”玻管染色装置(如图)的超薄切片染色法及在染色中应注意的事项。经多次使用证明,用该法染出的超薄切片电子着色均匀,结构清晰,有良好的反差。该法能保证切片染色条件的一致,有效地防止切片染色污染,提高染色质量。用该法染色,染液用量省,染20张载网只需1ml染液,降低了铀、铅污染环境的可能性。染色和冲洗时间大大缩短,染30张载网前后共只需30分钟,大大提高了工作效率。该染色装置由三部分组成,制作如下:A.染色管取一根长130mm、内径6mm的玻管,用酒精喷灯加热玻管的一端至内径缩为1mm。在距另一端20mm处,用喷射火焰打一个     

电镜超薄切片批量染色的新方法

超薄切片染色是透射电镜生物样本制备中的关键环节。本文介绍了一种透射电镜超薄切片染色的新方法,利用简单自制的染色液防污存储与批量染色装置,可对超薄切片载网进行批量化染色,不但极大提高染色效率,而且减少了染色过程中染色液、样品的污染,达到染色液的重复利用,同时减少重金属对操作者的伤害和对环境的污染。     

微波辐射的糖元PA-TCH-SP电镜特染

在显示糖元等多糖类物质 (碳水化合物 )的众多染色法中 ,PA- TCH- SP染色法是一种较理想的方法[1] ,其显示糖元颗粒清晰 ,尤其是染色背景较干净 ,非特异性沉淀少 ,但染色时间长 ( 1～3d) [2 ]。为缩短染色时间 ,作者探索用微波技术辅助染色 ,取得较好效果 ,并应用于寄生原虫、人睾丸支持细胞中的糖元显示[3,4 ] 。材料与方法标本包埋、切片 :鼠肝、阴道毛滴虫、人睾丸用戊二醛固定 ,不经锇酸固定或固定 5 min,常规电镜包埋 ;超薄切片 90 nm。染色试剂 :1 %过碘酸 ( PA) ,2 %硫卡巴肼 ( TCH) - 2 0 %醋酸 ( HAc) ,1 %蛋白银 ( SP)。微…     

一种用硅橡胶载网夹进行超薄切片染色的有效方法

本文介绍了一种能减少污染、省时省力的电镜超薄切片染色方法。     

透射电镜电子染色方法的改良

为提高透射电镜生物样品超薄切片的染色效率,在传统染色方法基础上进行改良,使用自制染色装置,在较短时间内完成大批生物样品超薄切片的电子染色。与传统方法相比较省时省药,减少污染机率,电镜观察的超微结构清晰,反差较好。     

不同包埋剂对半薄切片甲苯胺蓝染色效果的影响

目的:探讨不同包埋剂对半薄切片甲苯胺蓝染色效果的影响。方法:切取大鼠的坐骨神经及肾脏组织,经戊二醛-锇酸双重固定,乙醇、丙酮梯度脱水后,分别用Epon812和Eponate12包埋聚合,利用超薄切片机制备厚度为1.5μm的半薄切片,切片经甲苯胺蓝染色,在光镜下观察半薄切片的染色效果。结果:Eponate12包埋的半薄切片经甲苯胺蓝染色后,颜色更鲜艳,微细结构更清晰,图像反差更好。结论:Eponate12包埋的半薄切片经甲苯胺蓝染色后更有利于在光镜下观察组织的微细结构。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.