A 4–9 GHz 10W wideband power amplifier

A 4-9 GHz wideband high power amplifier is designed and fabricated, which has demonstrated saturated output power of 10 W covering 6-8 GHz band, and above 6 W over the other band. This PA module uses a balance configuration, and presents power gain of 7.3 ＋ 0.9 dB over the whole 4-9 GHz band and 39% power-added efficiency （PAE） at 8 GHz. Both the input and output VSWR are also excellent, which are bellow -10 dB.     

A 4-9 GHz 10 W wideband power amplifier

A 4-9 GHz wideband high power amplifier is designed and fabricated, which has demonstrated saturated output power of 10 W covering 6-8 GHz band, and above 6 W over the other band. This PA module uses a bal-ance configuration, and presents power gain of 7.3 ± 0.9 dB over the whole 4-9 GHz band and 39% power-added efficiency (PAE) at 8 GHz. Both the input and output VSWR are also excellent, which are bellow -10 dB.     

一个8~18GHz的宽带高功率放大器

设计研制了一个8~18GHz的混合集成电路宽带高功率放大器。高功率放大器由基于GaAs MMIC工艺的4指微带兰格耦合器实现。为了减小电磁干扰,采用散热效果好的多层AlN材料作为功率放大器的载体。当输入功率为25dBm时,功率放大器输出连续波饱和功率在8–13 GHz 频率范围内大于39dBm,在其他频率范围内大于38.6dBm,在11.9GHz我们得到最大输出功率39.4dBm。在整个频带内,功率附加效率大于18%,当输入功率为18dBm时小信号增益为15.70.7 dB。高功率功率放大器尺寸为25mm*15mm*1.5mm.     

An 8-18 GHz broadband high power amplifier

An 8-18 GHz broadband high power amplifier(HPA) with a hybrid integrated circuit(HIC) is designed and fabricated.This HPA is achieved with the use of a 4-fingered micro-strip Lange coupler in a GaAs MMIC process.In order to decrease electromagnetic interference,a multilayer AlN material with good heat dissipation is adopted as the carrier of the power amplifier.When the input power is 25 dBm,the saturated power of the continuous wave(CW) outputted by the power amplifier is more than 39 dBm within the frequency range of 8-13 GHz,while it is more than 38.6 dBm within other frequency ranges.We obtain the peak power output,39.4 dBm,at the frequency of 11.9 GHz.In the whole frequency band,the power-added efficiency is more than 18%.When the input power is 18 dBm,the small signal gain is 15.7±0.7 dB.The dimensions of the HPA are 25×15×1.5 mm~3.     

哈里斯全固态数字调频发射机功放故障分析及维护

功放是发射机的重要组成部分,功放正常工作与否直接影响发射机的正常工作。本文根据多年设备运行情况及维护经验,对哈里斯10KW全固态数字调频发射机功放故障作了详细的分析,并就日常维护作了简要介绍。     

2～8GHz宽带GaN功率放大器MMIC

基于0.25μm Ga N HEMT工艺,研制了一款两级拓扑放大结构的2~8 GHz宽带功率放大器MMIC(单片微波集成电路)。MMIC所用Ga N HEMT器件结构经过优化,提高了放大器的可靠性和性能;电路采用多极点电抗匹配网络,扩展了放大器的带宽,减小了电路的损耗。测试结果表明,在2~8 GHz测试频带内,在脉冲偏压28 V(脉宽1 ms,占空比30%)时,峰值输出功率大于30 W,功率附加效率大于25%,小信号增益大于24 d B,输入电压驻波比在2.8以下,在6 GHz处的峰值输出功率达到50 W,功率附加效率达到40%;在稳态偏压28 V时,连续波饱和输出功率大于20 W,功率附加效率大于20%。尺寸为4.0 mm×5.0 mm。     

Ka频段固态集成功率放大器的设计

毫米波系统已广泛应用于军事通信,作为核心部件的毫米波发射机,其输出功率为衡量系统性能指标的重要因素。本文运用混合集成的方法设计了一种Ka频段固态功率放大器,并结合实际情况分析了与调试相关的电路稳定性问题。测试结果表明,该放大器在f0±1.5 GHz的工作频带内,增益大于35 dB,P-1为30 dBm,达到设计要求。     

a 10-watt S-band solid-state amplifier

This paper describes the design and performance of an all-solid-state amplifier, which provided 29.5 dB of gain and 9.1 watts of CW output power in the 100-MHz band from 2.2 to 2.3 GHz. The technique used to measure optimum source and load impedances of a class-C transistor at microwave frequencies is shown. A comparison is made of the performance of several single-stage coaxial class-C designs. Attempts to combine several stages at a scale frequency of 1.15 GHz, using both direct paralleling and hybrid-combining, are discussed. Finally, the results obtained in hybrid-combining sixteen stages to obtain the 9.1 watts of CW output are shown.     

1.8 GHz class E power amplifier for wireless communications

The authors present a 1.8 GHz class E power amplifier for wireless communications. A fully integrated class E power amplifier module was designed, fabricated and tested. The circuit was implemented in a self-aligned-gate, depletion mode 0.8 μm GaAs MESFET process. The amplifier delivers 23 dBm of power to the 50Ω load, with a power added efficiency of 57% at a supply voltage of 2.4 V     

数字音频功率放大器优化设计

对数字音频放大器各组成环节进行了系统的分析,将双边带三电平自然采样法脉宽调制技术、Dead-Time技术、负反馈技术等引入脉冲编码调制器、开关放大器、低通滤波器等环节。通过对脉冲编码调制器、驱动方式、开关放大器、低通滤波器的优化设计,整机失真度低于0.05%,信噪比大于110 dB,效率达到了93%。     

Normally off GaAs DC-8 GHz amplifier

A DC-8 GHz, 8.5 dB-gain normally off GaAs monolithic amplifier with resistor load and shunt negative feedback has been developed. The fabricated amplifier has input and output VSWRs less than 1.8 over the whole frequency range     

Gallium-nitride microwave Doherty power amplifier with 40 W PEP and 68% PAE

A 40 W gallium-nitride microwave Doherty power amplifier for WCDMA repeater applications is presented. The main amplifier and peaking amplifier are implemented using two 20 W PEP GaN HEMTs. Performance is evaluated for broadband gain, power efficiency and adjacent-channel-power-ratio (ACPR). Experimental results of the GaN Doherty amplifier yielded a power gain of over 11 dB from 1.8 to 2.5 GHz, 68% power added efficiency at 40 W peak power. Good linearity performance of -48 dBc ACPR is obtained at a peak-to-average ratio of 9.8 dB.     

An X-band GaN combined solid-state power amplifier

5 GHz, the variation of output power is less than 1.5 dB.     

X 波段氮化镓合成固态放大器

Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm （14 W）, and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB.