共查询到19条相似文献,搜索用时 71 毫秒
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设计了一种适用于无线窄带射频接收系统的带通∑-△调制器,并将其成功集成于一个无线射频收发芯片之中。该调制器采用0.35μm CMOS工艺实现,采用斩波-稳零,动态元件匹配,以及正交采样等技术,提高系统的信噪比,并解决通道间失配的问题。模拟结果表明,该电路在30kHz带宽内,信噪比为83.4dB,而两个通道消耗的总电流仅为1mA。 相似文献
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测量系统中20位精度带通Σ-Δ调制器的设计 总被引:1,自引:0,他引:1
设计了一种用于测量系统的20位精度带通Σ-Δ调制器.采用低失真离散时间单环4阶1比特量化结构,以实现高精度的指标.对带通调制器中最关键的模块-谐振子进行了研究,设计了一种对电容非线性和失配不敏感并具有精确谐振频率的高Q值谐振子.仿真结果表明,该调制器在100 kHz中频处20 Hz带宽内实现了20位分辨率.本调制器采用AMI 0.35 μm标准CMOS工艺实现,整个调制器的总面积仅为2.5 mm2,在3.3 V供电电压下,调制器的总功耗仅为4 mW. 相似文献
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一种低电压工作的高速开关电流∑-△调制器 总被引:1,自引:0,他引:1
基于作者先前提出的时钟馈通补偿方式的开关电流存储单元及全差分总体结构,本文设计了一种二阶开关电流∑-Δ调制器。工作中采用TSMC 0.35μm CMOS数字电路工艺平台,在低电压工作下进行电路参数优化。实验表明,调制器在3.3V工作电压、10MHz采样频率、64倍过采样率下实现10-bit精度。与已有类似研究相比,本工作在相当的精度条件下,实现了低电压、视频速率的工作。 相似文献
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20位∑-△A/D转换器的设计 总被引:1,自引:2,他引:1
文章介绍了20位、5V单电源过采样∑-△A/D转换器,根据精度与阶数和过采样比的关系,设计了4阶蒡-驻调制器。在∑-△调制器中添加了局部负反馈,使转换器能对满量程(FS)输入信号进行精确转换;在梳状滤波器后面添加了补偿电路,补偿梳状滤波器在基带内的衰减,使基带内的纹波小于0.001dB。本电路采用0.6滋mCMOS工艺,电路的结构和精度通过了HSPICE、STAR-SIM等EDA软件的验证。 相似文献
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在简要介绍高阶1位量化∑-△A/D转换器基本原理的基础上,分析了∑-△调制器的噪声特性;介绍了传统线性模型下的噪声传递函数的设计方法.同时,结合实际高阶模拟∑-△调制器的开关电容实现电路,重点对影响调制器性能的非理想因素进行了详细分析,并采用程序建模仿真的方法指导电路设计.与传统设计方法的结果对比表明,文中的方法可以为电路设计提供更加可靠的依据. 相似文献
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提出了一种改进的三阶单环Sigma-Delta调制器,噪声传递函数采用前馈方式实现极点,降低了积分器输出信号的幅度,从而降低功耗;采用局部反馈实现零点,从而优化了输出信噪比。采用0.35μm CMOS工艺设计了该调制器,过采样率128,信号带宽24kHz,分辨率16bit,在3.3V工作电压下,模拟电路部分功耗2.7mW,数字部分功耗0.5mW。电路用开关电容技术实现,在HSPICE中通过多工艺角验证。 相似文献
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一种12位开关电流型Σ-△调制器 总被引:3,自引:0,他引:3
开关电流电路(SI)是近年兴起的一种模拟电路。文中引用了新型的两步采样开关电流技术(S^2I),对该电路中减小时钟馈漏效应的几种方法进行了分析。利用差分平衡结构的S^2I存储单元设计了平衡S^2I积分器,并在此基础上设计出一种平衡差分结构的二阶∑-△调制器。该调制器能够完全与标准CMOS数字工艺兼容。利用标准1.2μm数字COMS工艺的HSPICE模型参数进行了分析,该电路信噪比达到73.3dB, 相似文献
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Ana Rusu Alexei Borodenkov Mohammed Ismail Hannu Tenhunen 《Analog Integrated Circuits and Signal Processing》2006,47(2):113-124
A 1.8 V sigma-delta modulator with a 4 bit quantizer has been designed for GSM/WCDMA/WLAN receivers in a 0.18 um CMOS process.
The modulator makes use of low-distortion sigma-delta modulator architecture and Pseudo-Data-Weighted-Averaging technique
to attain high linearity over a wide bandwidth. Power dissipation is minimized by optimizing the architecture and by a careful
design of analog circuitry. In GSM mode, the modulator achieves 96/104 dB peak SNR/SFDR over 100 kHz bandwidth and dissipates
18 mW at a sampling frequency of 32 MHz. The modulator achieves 92/68 dB peak SFDR and 77/54 dB peak SNR over a 2 MHz/10 MHz
bandwidth and dissipates 23/39 mW at a sampling frequency of 64 MHz/160 MHz in WCDMA/WLAN.
Ana Rusu received degrees of diploma engineer in electronics and telecommunications engineering from Technical University of Iasi,
Romania, in 1983 and Ph.D. in electronics engineering from Technical University of Cluj-Napoca, Romania, in 1998. During 1983–1986
she was with Research Institute for Electronics Iasi, as researcher engineer. From 1986 to 1988 she was with Territorial Computer
Centre, Piatra-Neamt, Romania, as a programmer in software engineering. Since 1988 she has been with the Technical University
of Cluj-Napoca, Electronics and Telecommunications Faculty. In 1999 she was appointed as an associate professor. She has been
in visiting researcher positions in University of Bradford, England, and Institute National Politechnique of Grenoble, France,
in 1997 and 2001, respectively. Since September 2001, she has been with the Royal Institute of Technology (KTH), Stockholm,
Sweden, where she is a senior researcher in radio and mixed-signal systems group. Her research interests include data conversion
techniques for wireless communications and the design of low-voltage low-power analog and mixed-signal ICs. Ana Rusu has authored
or coauthored five books (published in Romanian language) and more than 40 papers in international conference proceedings
and journals.
Alexey Borodenkov received his B.Sc. degree in computer science and engineering from St. Petersburg Electrotechnical University, Russia in
2002 and M.Sc. degree in electrical engineering from Royal Institute of Technology (KTH), Stockholm, Sweden in 2004. In October
2004 he joined Samsung Electronics Co. Ltd., Gyeunggi-Do, Korea, where he is involved in the design of multi-standard transceivers
for wireless communications. His current research interests include integrated-circuit development of frequency synthesizers
and data converters.
Mohammed Ismail received the B.S. and M.S. degrees in electronics and telecommunications engineering from Cairo University, Egypt, in 1974
and 1978 and the Ph.D. in electrical engineering from the University of Manitoba, Canada, in 1983. He is a Professor with
the Department of Electrical Engineering, The Ohio State University, Columbus. Since April 2003, he is also a Professor with
the Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH) Stockholm, Sweden. He has
over 20 years experience of R&D in the fields of analog, RF and mixed signal integrated circuits. He has held several positions
in both industry and academia and has served as a corporate consultant to nearly 30 companies in the US, Europe and the Far
East. His current interest lies in research involving digitally programmable/configurable fully integrated radios with focus
on low voltage/low power first-pass solutions for 3G and 4G wireless handhelds. He publishes intensively in this area and
has been awarded 11 patents. He has co edited and coauthored several books. He co-founded ANACAD-Egypt (now part of Mentor
Graphics, Inc.) and Spirea AB, Stockholm (now Firstpass Semiconductors AB), a developer of CMOS radio and mixed signal IPs
for handheld wireless applications. Dr. Ismail has been the recipient of several awards including the US National Science
Foundation Presidential Young Investigator Award, the US Semiconductor Research Corp Inventor Recognition Awards in 1992 and
1993, and a Fulbright/Nokia fellowship Award in 1995. He is the founder of the International Journal of Analog Integrated
Circuits and Signal Processing, Springer and serves as the Journal's Editor-In-Chief. He has served as Associate Editor for
many IEEE Transactions, was on the Board of Governors of the IEEE Circuits and Systems Society and is the Founding Editor
of “The Chip” a Column in The IEEE Circuits and Devices Magazine. He is a Fellow of IEEE.
Hannu Tenhunen received degrees of diploma engineer in electrical engineering and computer sciences from Helsinki University of Tehnology,
Helsinki, Finland, in 1982 and Ph.D. in Microelectronics from Cornell University, Ithaca, NY, U.S.A., in 1986. During 1978–1982
he was with Electron Physics Laboratory, Helsinki University of Technology, and from 1983 to 1985 at Cornell University as
a Fullbright scholar. From September 1985 he has been with Tampere University of Technology, Signal Processing Laboratory,
Tampere, Finland, as an associate professor. He was also a coordinator of National Microelectronics Program of Finland during
1987–1991. Since January 1992, he has been with Royal Institute of Technology (KTH) Stockholm, Sweden, where he is a professor
of electronic system design. His current research interests are VLSI circuits and systems for wireless and broadband communication,
and related design methodologies and prototyping techniques. He has made over 400 presentations and publications on IC technologies
and VLSI systems worldwide, and has over 16 patents pending or granted. 相似文献
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I. Grech J. Micallef C. J. Debono P. Malcovati F. Maloberti 《Analog Integrated Circuits and Signal Processing》2001,27(1-2):151-163
A second order switched capacitor sigma-delta modulator operating at a supplyvoltage of 1 V is presented. This low supply voltage restricts the gate overdrivevoltage available for switching transistors. The design relies on the elimination ofcritical switches by using a modified switched op amp for the integrator and novelswitched half-supply and reference voltage generators. The design has been carried outin a fully differential configuration in order to minimize errors arising from chargeinjection and clock-feedthrough effects. The converter has been implemented using aconventional 0.8 m double-poly double-metal CMOS process, having a nominalthreshold voltage of 0.75 V. Test results, showing more than 9 bits of resolutionwith an oversampling ratio of 64, are also presented. 相似文献
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《IEEE transactions on circuits and systems. I, Regular papers》2009,56(5):886-893
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This paper describes an initial work on a second-order bandpass Sigma-delta modulator employing crystal resonator. The aim
of this work is to explore the possibilities of realizing bandpass sigma-delta modulator using non-electronic resonators,
such as micro-mechanical resonators. The initial study is based on crystal resonators as they have similar characteristics
as the other types of resonator and are readily available. In order to obtain the desired loop transfer function, a compensation
circuit is proposed to cancel the anti-resonance in the crystal resonator. The modulator chip is fabricated in a 0.6-μ m CMOS
process. The bandpass noise shaping is demonstrated in the experiment with a 1- and 8-MHz crystal resonator, respectively.
Yong Ping Xu graduated from Nanjing University, P.R. China in 1977. He received his Ph.D. from University of New South Wales (UNSW) Australia,
in 1994. From 1978 to 1987, he was with Qingdao Semiconductor Research Institute, P.R.China, initially as an IC design engineer,
and later the deputy R&D manager and the Director. From 1993 to 1995, he worked on an industry collaboration project with
GEC Marconi, Sydney, Australia, at the same university, involved in design of sigma-delta ADCs. He was a lecturer at University
of South Australia, Adelaide, Australia from 1996 to 1998. He has been with the Department of Electrical and Computer Engineering,
National University of Singapore since June 1998 and is now an Associate Professor. His general research interests are in
the areas of mixed-signal and RF integrated circuits, and integrated MEMS and sensing systems. He is a Senior Member of IEEE.
Xiaofeng Wang was born in Shangqiu, China, in 1980. He received B.Eng. degree from Northwestern Polytechnical University, Xi'an, China,
in 2000 and M. Eng. degree from National University of Singapore, Singapore, in 2003, both in electrical engineering. He is
currently working toward the Ph.D. degree at Tufts University, Medford, USA. His research is on high speed ADC design.
Wai Hoong Sun was born in Taiping, Malaysia in 1976. He received the B. App. Sc. (Honours) degree in electrical engineering from the University
of Toronto, Canada in 1999. After graduating, he joined Sharp Electronics Singapore as an R&D Engineer where he was involved
in FPGA and digital IC design of display related circuits. In 2001 and 2002, he did full time research in the National University
of Singapore on bandpass sigma-delta modulators. During that period, he was also a Graduate Tutor in electronics for second
year electrical and computer engineering students. He then joined Philips Electronics Singapore in 2002 as a Lead Engineer.
He did board-level designs for LCD and plasma televisions. He was also development project leader for a project that was successful
in bringing to the market a range of LCD and plasma televisions. Currently, he is a Hardware Architect where he is responsible
for the system-level electrical design of the television board. 相似文献
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采用Σ△调制技术的小数分频频率合成器设计了CPFSK调制电路,对调制电路的原理以及噪声性能进行了细致的分析.芯片集成了2RC波形成形电路、三阶单级Σ△调制器、双模分频器、鉴频鉴相器、电荷泵和压控振荡器,在四电平2RC-CP FSK调制时,16 kHz的带宽内可以实现25.6 kbps的信息速率传输.电路采用0.35μm标准CMOS工艺实现,调节片外电感,芯片最高工作频率可以到200 MHz. 相似文献