Amorphous-silicon TFT array for LCD addressing

A 64×64 element matrix array of amorphous-silicon thin-film transistors has been fabricated on a glass substrate. Using a drive scheme to simulate a 500-line display, an output voltage of 8.5 V RMS is obtained. This large output voltage is sufficient for an alphanumeric liquid-crystal display using the dyed cholesteric-nematic phase-change effect. The driving voltages for the array are compatible with LOCMOS (18 V) peripheral circuitry.     

Amorphous-silicon solar cells

The status of a-Si solar cell technology is reviewed. This review includes a discussion of the types of solar cell structure that are being used in commercial products. An overview of the development efforts under way involving new materials, such as alloys and microcrystalline films, and their impact on device performance is given. The status of stability in a-Si solar cells and projections for costs for large-scale manufacturing facilities are reviewed. The development of markets for a-Si photovoltaics is also discussed     

Amorphous-silicon silicon-nitride field-effect transistors

n-channel and p-channel amorphous-silicon field-effect transistors have been fabricated on a glassy substrate using undoped and impurity-doped a-Si films as the semiconductor and silicon nitride deposited from an SiH4-N2 mixture as the gate insulator. A change in the source-drain conductance of greater than four orders of magnitude is realised by changing the gate potential from 0 to 5 V.     

Amorphous-silicon image sensor IC

A novel amorphous-silicon image sensor IC is proposed in this letter. The unit cell consists of an amorphous-silicon field effect transistor, an amorphous-silicon photoconductor and an MOS capacitor. The fundamental properties of the cell are investigated and operation of a prototype integrated 8-bits linear array is described.     

红外焦平面阵列成像动态仿真系统

红外热像仪的研制离不开各种图像处理算法的设计、仿真和优化;结合虚拟仪器技术和可编程多模式驱动技术,开发了红外焦平面阵列成像动态仿真系统软硬件平台;利用这一平台,通过图形化软件编程, 可进行多模式红外焦平面阵列的各种图像处理算法的动态仿真,实时验证其成像效果,及时进行修改和优化。工程应用实践表明：系统对盲元检测与补偿、非均匀性校正和直方图修正等算法的验证与优化取得了满意的效果;该系统为红外热像仪设计仿真、算法的适用性和实时性验证以及算法的优化提供了灵活实用的工具。     

Plasma display panel with micro-discharge array

In 1996 , Schoenbach created the termof micro-hol-lowcathode discharge for the first ti me on the basis ofhollowcathode discharge[1].Fig.1 shows the electrodegeometries and electric circuit for a micro-hollowcath-ode discharge. The electrode geometry consists of acathode or anode, whichis composed of metal sheets of100μmthickness , separated by an insulator sheets ofseveral hundreds of micron. Two closely spaced elec-trodes with cylindrical openings of several hundreds ofmicronin diameter wit…     

The direct-view matrix-addressed smectic a LCD panel: Dynamic behavior

We present an analytical solution of the heat-flow equation applied to a direct-view thermally matrix-addressed smectic LCD panel. Using experimental values of the operating parameters of an actual panel, we compute the corresponding temperature profiles in the liquid-crystal layer. These theoretical results are compared with temperature measurements on a test cell to verify the model. Finally, we show how the thermal analysis can improve the understanding of the behavior of the smectic display, and thus to optimize the cell design for the widest possible operating margin.     

Amorphous-silicon thin-film transistors with very high field-effectmobility

The fabrication and performance of hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with field-effect mobilities of 5.1 cm²/V-s are discussed. This is the highest field-effect mobility of this type of TFT reported to date. The device shows an on/off current ratio exceeding 10⁵ and a subthreshold swing of 0.5 V/decade     

Amorphous-silicon field-effect device and possible application

The characteristics of an insulated-gate field-effect transistor made from amorphous silicon (a-Si) deposited in a glow discharge are discussed. It is suggested that the a-Si device could be applied with advantage in an addressable matrix of a liquid-crystal display panel.     

基于图像轮廓分析的LCD线路缺陷检测

为了避免图像配准精度对液晶显示屏(LCD)线路缺陷检测准确率的影响,采用一种基于图像轮廓分析的新方法,基于深度优先搜索寻找图像轮廓,并根据格林公式计算轮廓面积,将待检测LCD的线路轮廓面积与标准模板的轮廓面积比较,从而判断是否存在短路、断路、孔洞和孤岛缺陷。该方法不需要图像配准,降低了算法精度要求,从而提高了检测的正确率。通过对200片小型LCD的测试,检测准确率达99%。结果表明,该方法可以快速正确地检测出图像上的所有轮廓,并计算出轮廓面积,用面积比较代替传统的图像像素比较,检测短路、断路等缺陷的正确率有了较大提升。该算法在LCD线路缺陷检测方面具有很好的应用前景。     

液晶显示器件模拟软件Visual LCD专业版及应用

介绍液晶显示器模拟软件Visual LCD专业版及其应用，并举例计算了具有抗反射膜的反射式器件和采用负性薄膜补偿的超扭曲向列相液晶器件。     

内置触摸屏与键盘接口的LCD控制器RA8806的应用

内置中文字库的点阵液晶显示驱动器RA8806具有极强的通用性.RA8806集成的8×8的键盘扫描接口和4线电阻式触摸屏控制接口为人机交互界面提供了理想的解决方案.给出了RA8806详细的硬件配置方法和相关程序.实验结果表明,RA8806构成的人机交互系统的硬件电路更加紧凑、可靠,软件设计更加方便.     

内置触摸屏与键盘接口的LCD控制器RA8806的应用

内置中文字库的点阵液晶显示驱动器RA8806具有极强的通用性。RA8806集成的8x8的键盘扫描接口和4线电阻式触摸屏控制接口为人机交互界面提供了理想的解决方案。给出了RA8806详细的硬件配置方法和相关程序。实验结果表明,RA8806构成的人机交互系统的硬件电路更加紧凑、可靠,软件设计更加方便。     

简化流程的多晶硅像素电极透反LCD基板的研究

鉴于MIC P -Poly-Si薄膜具有比较好的电学特性和近似半透半反的光学特性,本文提出一种以此用作透反双重功能LCD下电极的LCD基板的设计考虑.并针对MIC多晶硅薄膜在红、绿和蓝三色区的透射率与反射率的差异,采用不同面积的铝反射片巧妙地予以平衡和补偿.校正结果表明在可见光范围内,其红光、绿光和蓝光处的透射率和反射率基本符合白光平衡的要求.用该薄膜多晶硅作LCD像素电极技术制备的AMLCD中,其像素电极既是驱动TFT的漏极的延伸,而铝反射镜又是与TFT的电极连线同层制备.这样,不仅可以制备出性能良好透、反双功能的LCD基板,而且明显简化了AMLCD制备工艺流程.工艺流程的简化将有利降低制造成本.     

Investigation of 65 nm CMOS transistor local variation using a FET array

CMOS FET local variation has been investigated using a new FET array structure. Key findings include four aspects. (1) At deep sub-micron technology node, local variation is significantly higher than global variation. Only 5–10% of total variation is a result of global variation. (2) Sample size affects point estimate of local variation. Sample size error can account for a significant portion of the fluctuation in the point estimate of local variation. (3) Well proximity effect (WPE) has a small impact on V_t local variation. Its impact on local variation of drive current is more significant. (4) Local variation reduces with temperature. The magnitude of NMOS V_t local variation reduction is more pronounced than PMOS. These results form a solid foundation to accurately model MOSFET local variation.     

Characterization of thin active layer on semi-insulating GaAs by mapping of FET array performance

A computer-aided FET performance measurement system was established to characterize a thin active layer formed on a semi-insulating GaAs substrate. By mapping FET array performances on a thin active layer, this system was applicable to substrate material quality evaluation and to a check of FET fabrication processes. It also gave the key information on FET threshold voltage scattering to the GaAs IC circuit designer. Most importantly, it was powerful in the characterization of thin active layers for which conventional methods, such as resistivity, Hall, or C-V measurements, were not effective because of the surface depletion layer into the thin active layer. It is demonstrated that dislocations in substrate crystal were clearly revealed to affect FET threshold scattering on the active layer formed by direct ion implantation on an LEC-grown semi-insulating substrate.     

Amorphous-silicon distributed-threshold voltage transistors withself-aligned poly-silicon sources and drains

A microstructure has been introduced into the channel of amorphous-silicon thin-film transistors with poly-silicon sources and drains. A slant-photolithography method was introduced for fabricating this device without additional photomasks. The off-characteristics have been improved without sacrificing originally good on-characteristics. Temperature dependence is also discussed for the transistor characteristics