Effects of Processing Conditions on the Dielectric Properties of CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript>

There have been a number of recent reports of anomalously large permittivities (ε _r ≈ 10⁴) in the material CaCu₃Ti₄O₁₂. The dielectric spectra is characterized by a large, relatively temperature independent permittivity near room temperature which exhibits a dielectric relaxation above 100 K. The crystal structure of CaCu₃Ti₄O₁₂ can be described as pseudo-perovskite with a cubic unit cell with a lattice constant of 7.391 Å. The ubiquitous occurrence of this dielectric behavior in ceramics, single crystals, and thin films suggests that the polarization is not related to a simple conducting grain/insulating grain boundary-type system. While the precise origin of the dielectric response is not entirely clear, in this work it is shown that processing conditions have a significant influence on the room temperature dielectric properties. Specifically, the permittivity and loss exhibit a strong dependence on the oxygen partial pressure and sintering time. In fact, studies of the effects of sintering time and supporting evidence from capacitance-voltage measurements conclusively show that there is no direct relationship between the permittivity and grain size, as is the case in classical boundary layer systems. Lastly, with aliovalent doping the room temperature dielectric properties can be optimized to provide a high permittivity (ε _r ～ 8,000) dielectric with relatively low loss (tan δ < 0.05 at 1 kHz).     

Effect of AC&DC Field on the Dielectric Response of (Pb,La)TiO3 Thin Films

Lanthanum doped lead titanate thin films are the potential candidates for the capacitors, actuators and pyroelectric sensor applications due to their excellent dielectric, and ferroelectric properties. Lanthanum doped lead titanate thin films are grown on platinum coated Si substrates by excimer laser ablation technique. A broad diffused phase transition with the maximum dielectric permittivity (?_max) shifting to higher temperatures with the increase of frequency, along with frequency dispersion below T_c, which are the signatures of the relaxor like characteristics were observed. The dielectric properties are investigated from ?60°C to 200°C with an application of different dc fields. With increasing dc field, the dielectric constant is observed to reduce and phase transition temperature shifted to higher temperature. With the increased ac signal amplitude of the applied frequency, the magnitude of the dielectric constant is increasing and the frequency dispersion is observed in ferroelectric phase, whereas in paraelectric phase, there is no dispersion has been observed. The results are correlated with the existing theories.     

Effect of Ba2+ – Sr2+ co-substitution on the structural and dielectric properties of Lead Titanate

Growing interest in developing new materials for device applications led to study of ferroelectric oxides in a wide range and variety of compositions. In the present work, polycrystalline samples of lead barium strontium titanate (Pb_1-xBa_0.5xSr_0.5xTiO₃) solid solution system have been synthesized. Phase formation studies and crystal structure analysis were carried out by X ray diffractometry at room temperature, which suggested formation of single phase compound with tetragonal structure up to x?=?0.8 and cubic structure for x?=?1.0. The XRD pattern has been analyzed by employing Rietveld method. The phase transition in the system was confirmed by Differential Scanning Calorimetry (DSC). Samples with 0.0????x????0.8 are in ferroelectric state whereas with x?=?1.0 is found to be in paraelectric state at room temperature. Co-substitution of Ba²⁺ and Sr²⁺ into lead titanate shows reduction in anisotropy as well as porosity. The dielectric studies of the system as a function of temperature and frequency were carried out in the range 323?K to 773?K and 100?Hz to 1?MHz respectively. Variation of dielectric constant and loss tangent with temperature shows peaking effect near Curie temperature. Frequency dependant dielectric studies clearly show that the dielectric constant and loss tangent decrease exponentially with increased frequency.     

Tunable dielectric characteristics of (Ba0.95Ca0.05)(Ti1−y Sn y )O3 ferroelectric ceramics

In order to explore potential candidates for field tunable dielectric materials, the present work was focused on investigating the microstructure, dielectric and tunable dielectric properties of A- and B-site substituted barium titanate ceramics. Large tunability with lower dielectric loss was obtained in the present ceramics at a quite weak bias field. The excellent tunable characteristics were achieved for y?=?0.15 at room temperature (25 °C): tunability?=?26%, tanδ?<?0.01 at 10 kHz under a very weak bias DC electric field of 2.1 kV/cm.     

High dielectric permittivity of SrBi2Nb2O9(SBN) added Bi2O3 and La2O3

In this paper, the structural and dielectric properties of SrBi₂Nb₂O₉ (SBN) as a function of Bi₂O₃ or La₂O₃ addition level in the radio (RF) and microwave frequencies were investigated. The SBN, were prepared by using a new procedure in the solid-state reaction method with the addition of 3; 5; 10 and 15 wt.% of Bi₂O₃ or La₂O_3. A single orthorhombic phase was formed after calcination at 900 °C for 2 h. The analysis by x-ray diffraction (XRD) using the Rietveld refinement confirmed the formation of single-phase compound with a crystal structure (a?=?5.5129 Å, b?=?5.5183 Å and c?=?25.0819 Å; α?=?β?=?γ?=?90°). Scanning Electron Microscope (SEM) micrograph of the material shows globular morphologies (nearly spherical) of grains throughout the surface of the samples. The Curie temperature found for the undoped sample was about 400 °C, with additions of Bi³⁺, the temperature decreases and with additions of La³⁺ the Curie temperature increased significantly above 450 °C. In the measurements of the dielectric properties of SBN at room temperature, one observe that at 10 MHz the highest values of permittivity was observed for SBN5LaP (5%La₂O₃) with values of 116,71 and the lower loss (0.0057) was obtained for SBN15LaP (15%La₂O₃). In the microwave frequency region, Bi₂O₃ added samples have shown higher dielectric permittivity than La₂O₃ added samples, we highlight the SBN15BiG (15 % Bi₂O₃) with the highest dielectric permittivity of 70.32 (3.4 GHz). The dielectric permittivity values are in the range of 28–71 and dielectric losses are of the order of 10^?2. The samples were investigated for possible applications in RF and microwave components.     

Electrical and dielectric properties of barium titanate – polydimethylsiloxane nanocomposite with 0-3 connectivity modified with carbon nanotube (CNT)

Abstract

This study explored the preparation and electrical properties of 0–3 barium titanate/polydimethylsiloxane nanocomposites by dispersing barium titanate nanoparticles (BaTiO₃; BT) into the polydimethylsiloxane (PDMS) matrix phase. The effect of barium titanate nanoparticles on electrical properties has been investigated systematically, and the relative permittivity of nanocomposites was found to increase significantly with increasing barium titanate content. Different theoretical models were used to predict the dielectric constant of these composites and compare their experimental value with the theoretical value in order to find an appropriate equation. The result indicated that the dielectric properties of composites are influenced not only by relative permittivity of the components but also dependence on interactions between ceramics and polymers. Furthermore, the preparation and dielectric properties of BT/PDMS nanocomposites modified with carbon nanotube (CNT) were also studied. The dielectric results demonstrate that adding CNT can enhance the relative permittivity of the BT/PDMS composite via improvement of dispersion and distribution of the BT nanoparticles in the PDMS matrix phase. Moreover, the electrical outputs from the BT/PDMS/CNT nanocomposites generator were measured under periodic knocking. The nanocomposites innovatively expand the feasibility of self-powered energy systems for smart sensor and energy harvesting applications.     

The structure and dielectric properties of low temperature sintering barium titanate based x7r ceramics

In this paper we try to do systematic investigation on the structure and dielectric properties of low temperature sintered barium titanate based X7R ceramics, which are doped with rare earth oxide, Nb₂O₅, Co₃O₄ using ZnO–B₂O₃ as the sintering aids. The dielectric ceramic powder can be sintered at the temperature below 950°C to satisfy X7R requirement and also with good permittivity and low dielectric loss. The research strongly suggest that this doped BaTiO₃ based ceramic, which can be sintered at a rather low temperature, may be used in the production of MLCC with low content of Pd in the Ag–Pd electrode, and for sure, the production cost would be greatly reduced.     

Room temperature and 77K dielectric properties of acetate-derived PZT,PLZT, PSZT and PBZT thin films

Abstract

Ferroelectric thin films in the PZT, PLZT, PBZT (lead barium zirconate titanate) and PSZT (lead stannate zirconate titanate) compositional systems were prepared from as-received acetate precursors. Multiple-layer thin films were fabricated via a spin coating technique and sintered at 650 – 700°C for two to three minutes per layer, yielding an overall thickness of 0.45um. The dielectric and ferroelectric hysteresis loop properties of these films were measured at room temperature and 77K. The results show that the thin films experience a substantial loss (-80% avg.) in dielectric permittivity at 77K and a significant increase in P_R, E_c and electrical breakdown strength. The phase transformation trends on cooling from room temperature to 77K were from SFE (slim-loop FE)-to-FE and AFE-to-FE. Compositions in these systems show promise for potential low temperature applications.     

Ferroelectric Bi4Ti3O12 and Bi4−x La x Ti3O12 ceramics prepared by a new sol-gel route

Ceramics of bismuth titanate, Bi₄Ti₃O₁₂ (BIT) and the La-doped series, Bi_4?x La _x Ti₃O₁₂ (xBLT) with x?=?0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, and 0.75, have been synthesized by a new sol-gel process based on ethylene glycol. La-doping is found to reduce the temperature of the formation of pure Bi-layer-structured phase from 600 °C in BIT and low La-doped xBLT (x?=?0.1–0.3) to 500 °C in high La-doped xBLT (x?=?0.4–0.75). Increasing the La-content in the xBLT ceramics decreases the contribution of the space charge polarization to the apparent dielectric permittivity. The ceramics of xBLT prepared by this sol-gel route exhibit improved dielectric properties, with a higher room temperature dielectric constant and lower losses up to high temperatures.     

Interface and ionic interdiffusion in cofired dielectrics/ferrite layer composites

Zinc-magnesium titanate dielectrics/nickel-zinc-copper ferrite layer composites were prepared. An interlayer was designed to relax the interfacial stress because of the mismatch shrinkage between dielectric and ferrite. And as the results, zero camber and crack-free dielectric/interlayer/ferrite composite samples were obtained and the interface was continuous with no delamination. The cofiring interface and ionic interdiffusion between the constituents were investigated. The interdiffusion of the composite can be regarded as the semi-infinite diffusion-couple model and based on this diffusion model, the numerical simulation for the ionic composition distribution was carried out by computer, which was in agreement with the experimental results. The activation energies for the Ti⁴⁺, Ni²⁺, and Fe³⁺ were determined respectively. The difference between apparent activation energies was discussed in this article. The layer composite sintered at 930°C exhibited the dielectric properties: ?? _r ?=?18.2, tan???=?3.01?×?10^?3. Due to their low firing characteristics and realizable co-firing compatibility, the layer composites can serve as the promising medium materials in the multilayer LC filter.     

High-k Ceramic Materials Based on Nonferroelectric AFe1/2B1/2O3 (A-Ba,Sr,Ca; B-Nb,Ta,Sb) Perovskites

Very high values (10³–10⁴) of the dielectric permittivity showing a weak temperature dependence and a Debye-like frequency dependence were observed in ceramics of AFe_1/2B_1/2O₃ (A-Ba,Sr,Ca; B-Nb,Ta,Sb) perovskites. Such behavior is inherent to so-called high-k materials. The analysis of the experimental data have shown that a Maxwell-Wagner relaxation is likely to be a main source for the phenomenon observed.     

Investigation of dielectric and relaxor ferroelectric properties in Ba(Zr x Ti1−x )O3 ceramics

Barium zirconate titanate Ba(Zr _x Ti_1?x )O₃ (BZT x?=?0.1, 0.15, 0.2, 0.25) ceramics doped with Nb₂O₅ have been prepared by a traditional solid phase reaction. The temperature dependence of dielectric permittivity has been investigated. The results show that the phase transition temperature T _c is depressed and the diffuse phase transition behavior is enhanced with increasing Zr content. The Cole–Cole plot has been discussed and the cause of the deviation has been analyzed. The temperature dependence of inverse dielectric constants was investigated. A modified Curie–Weiss law can be used to describe the diffuseness of a phase transition, and diffusion factor increases with the Zr content.     

THE ELECTRICAL AND STRUCTURAL PROPERTIES OF Li2CO3 DOPED 0.7(Ba,Sr)TiO3-0.3MgO CERAMICS

ABSTRACT

We have studied the formation and characterization of Li₂CO₃ doped 0.7(Ba,Sr)TiO₃-0.3MgO ceramics for the low temperature sintering and microwave applications. In this study 1 ～ 5 wt% of Li₂CO₃ was added to the 0.7(Ba,Sr)TiO₃-0.3MgO ceramic materials to reduce the sintering temperature. The MgO contents, which added in this experiment, play a role of improving dielectric permittivity such as low frequency dispersion and low loss tangent.

In this paper, we will discuss the crystalline properties, dielectric properties, and the microstructures of Li₂CO₃ doped 0.7(Ba,Sr)TiO₃- 0.3MgO ceramics. No pyro phase was observed in the X-ray diffraction method. Very weak frequency dispersion of dielectric permittivity was observed from the 1 kHz to 1 MHz range. Different grain sizes of Li₂CO₃ doped 0.7(Ba_0.5Sr_0.5)TiO₃-0.3MgO ceramics were observed through the SEM methods.     

Surfaces structure of bulk and thin film ferroelectrics

Abstract

Based on the experimental results of thickness dependences of breakdown voltage and dielectric permittivity for BaTiO₃ family ceramics, (Pb, La)TiO₃ thin films and commercial multilayer capacitors, surface layer structures are discussed. Surface layers inside ferroelectric materials are consisting of non-ferroelectric Kanzig layer with low dielectric permittivity and with higher concentrations of impurities due to the inter diffusion between substrates and bulk, internal stresses induced by lattice mismatch, cubic-tetragonal phase transition, electric field induced anisotropies and internal bias field (space charge field). The Voltage - Current characteristics (V-I curve), D-E loops of ferroelectric materials show asymmetric behaviors. Saturation phenomena of V-I curves are observed only ferroelectric temperature region. The breakdown voltage almost depends on the non-ferroelectric Kanzig layer and the dielectric permittivity depends on the volume fraction of non-ferroelectric parts. Log-log plots of dielectric permittivity and breakdown voltage suggest that the thickness of non-ferroelectric Känzig layer should be at least more than 10～20 nm and in the grain boundary thickness of bulk ferroelectric materials should be more, especially in the liquid phase sintering, the thickness of grain boundary is a order of 0.1～0.2 μm.     

DIELECTRIC BEHAVIOUR OF A NANOGRAIN PMN POWDERS

ABSTRACT

Dielectric permittivity of 150 nm mean grain size Pb(Mn_1/3Nb_2/3)O₃ (PMN) nanopowder has been investigated by dielectric spectroscopy in the 20 Hz–1 MHz frequency range and 100 K–400 K temperature range. The broad and diffused dielectric dispersion has been observed, but the dispersion region and the maximum of the real part of dielectric permittivity is shifted to lower temperatures compare to PMN single crystal and ceramics. The mean relaxation time, obtained from fits of the frequency dependences of the dielectric permittivity with Cole-Cole formula, changes according to the Vogel-Fulcher law with the freezing temperature T ₀ = 88 K which is much lower than in bulk PMN materials.     

Pb(Mg1/3Nb2/3)O3 and (1 − x)Pb(Mg1/3Nb2/3)O3 − xPbTiO3 Relaxor Ferroelectric Thick Films: Processing and Electrical Characterization

The lead magnesium niobate [Pb(Mg_1/3Nb_2/3)O₃ or PMN], and its solid solutions with lead titanate (PbTiO₃ or PT), are of great interest because of their high electromechanical properties. At large PMN content, these materials exhibit relaxor characteristics with large electrostrictive strains and a large permittivity, while compositions near the morphotropic phase boundary present very interesting piezoelectric properties. So far, properties of these materials in ceramic, thin film and single-crystal form have been investigated. In this paper, we report on preparation and properties of pyrochlore free PMN and 0.65PMN-0.35PT thick films (thickness = 10 to 20 m). The films were prepared from ethyl cellulose ink by screen printing on alumina substrate. The influence of various parameters, such as powder characteristics, inks formulation and films sintering conditions, on films densification are discussed. The dielectric and electromechanical properties of the films were examined. Relaxor-like behaviour was clearly demonstrated in PMN films. The maximum relative permittivity for PMN film was 10000 (at 0.1 kHz), which is lower than in bulk ceramics (17800 at 0.1 kHz) prepared under the same conditions. For 0.65PMN-0.35PT, the maximum relative permittivity was around 15500 against 24000 in the bulk. Several parameters, which might be responsible for the lower permittivity, are discussed. Poled 0.65PMN-0.35PT thick films exhibit relatively large piezoelectric response (d ₃₃ up to 200 pm/V) and unipolar strains approaching 0.1%, making these films of interest for various actuator and transducer applications.     

Dielectric Properties of Yttrium Vanadate Crystals from 15 K to 295 K

Yttrium Vanadate (YVO₄) is a birefringent crystal, which has similar dielectric constant as that of Sapphire. In this paper we have reported the measurement of the real part of permittivity and loss tangent of YVO₄ crystal in the temperature range 15–295 K at a frequency of 16.3 GHz. We have used the dielectric post resonator technique for the microwave characterisation of the YVO₄ dielectric rod. The multifrequency Transmission Mode Q-Factor (TMQF) technique has been used for data processing and hence precise values of permittivity and loss tangent are achieved. Easily machineable YVO₄ is characterized by low losses at microwave frequencies. At temperature of 15 K and frequency of 16.3 GHz the permittivity was 9.23 and loss tangent was 2 × 10^{− 5}. YVO₄ is identified as a potential candidate to replace expensive Sapphire in many microwave applications.     

Giant dielectric constants in K0.8M0.4Ti1.6O4 (M = Ni,Zn) lepidocrocite-type layered titanate ceramics

Abstract

We reported herein the temperature-dependent dielectric properties of K_0.8M_0.4Ti_1.6O₄ (M?=?Ni, Zn) lepidocrocite titanate ceramics at the frequency f of 10³, 10⁴ and 10⁵ Hz. This titanate is an example of layered alkali titanium oxides possessing two-dimensional (2D) sheets of edge-shared TiO₆ octahedra, in contrast to other widely studied materials with mostly corner-shared TiO₆ motifs. The giant dielectric constants ε′ ～10⁴ and the dielectric losses tan δ ～ 0.5–2 were obtained upon heating from RT to 250?°C. These values in our water-free ceramics are comparable to those previously reported in lepidocrocite titanate and related structures containing up to 15%wt water. The results were explained considering (i) Maxwell-Wagner polarization of interlayer species, and (ii) the possible formation of internal barrier layer capacitors (IBLCs) via the oxidized surfaces.     

Dielectric and pyroelectric properties of (1 − x)PST-xPZT ferroelectric ceramics

Pb(Sc_1/2Ta_1/2)O₃ (PST) ceramics were investigated greatly in the world for their unique pyroelectric, ferroelectric and dielectric properties and comprehensive applications on uncooled focal plane arrays, infrared detectors and other electronic devices. However, the PST ceramics doped with other perovskite ferroelectrics showed more excellent electrical and electronic properties. In this paper, (1???x)PST-xPZT(PSTZT) ferroelectric ceramics were prepared by conventional solid state process. The experiment results demonstrated that the PSTZT ceramics had pure perovskite phase. The temperature dependence of permittivity of PSTZT ceramics was investigated in detail, which indicated that PSTZT was not a complete diffusive phase transition ferroelectric ceramics. At room temperature, the pyroelectric coefficient of PSTZT (x?=?0.1) ceramics was about 15*10^?8C/(cm² K).     

Dielectric and ferroelectric properties of Nb-doped Ba0.8Sr0.2TiO3 ceramics

Ferroelectric and dielectric properties were investigated for Ba_0.8Sr_0.2Ti_(1?5/4x)Nb _x O₃ ceramics with different Nb₂O₅ concentrations. The relations between the ceramic structures and those properties were discussed. The Ba_0.8Sr_0.2TiO₃ doping with 0.01mol% Nb₂O₅ appears to have a strong ferroelectric effect and better dielectric properties. The max permittivity (? _max) is up to 7,521.3 and Ba_0.8Sr_0.2Ti_(1?5/4x)Nb _x O₃ ceramics has higher permittivity even at room temperature. The permittivity presents broadened curves at large temperature ranges, which suggests a non Curie–Weiss behavior near the transition temperature. The diffuse phase transition coefficient (δ) for Ba_0.8Sr_0.2Ti_(1?5/4x)Nb _x O₃ doping with 0.01mol% Nb₂O₅ reaches 0.098, and its P–E loop expresses a diffusing curve. The remanent polarization (2P _r) and coercive field are 31.3 μC/cm² and 10 kV/cm, respectively. The P–E loop presents a diffusing curve, which is relative to the relaxor characteristic.