Inside Front Cover: Self‐Assembled Highly Faceted Wurtzite‐Type ZnS Single‐Crystalline Nanotubes with Hexagonal Cross‐Sections (Adv. Mater. 16/2005)

Highly faceted wurtzite‐type ZnS nanotubes with hexagonal cross‐section morphologies have been self‐assembled via a controllable high‐temperature thermal‐chemical reaction route in work reported by Yin and co‐workers on p. 1972. The self‐assembly growth along c‐axis to highly hexagonal‐faceted ZnS single‐crystalline nanotubes is associated with the crystallographic characteristics, such as the non‐central and polar surfaces of the wurtzite‐type ZnS structure. The faceted ZnS nanotubes grow along the <0001> direction, and are closed by low‐index faces of non‐polar {1000} faces. The inside cover and insets show electron microscopy and scanning electron microscopy images of the faceted ZnS nanotubes.     

Strong-Excitation Photoluminescence of PbBr2· CH3NH2Crystals

The photoluminescence spectra of PbBr₂· CH₃NH₂crystals were measured at 293 and 80 K as a function of excitation intensity and wavelength. The photoluminescence was shown to be due to free-exciton recombination with minor Stokes losses. Under high-intensity excitation, stimulated emission was observed.     

High‐Pressure‐Induced Comminution and Recrystallization of CH3NH3PbBr3 Nanocrystals as Large Thin Nanoplates

High pressure (HP) can drive the direct sintering of nanoparticle assemblies for Ag/Au, CdSe/PbS nanocrystals (NCs). Instead of direct sintering for the conventional nanocrystals, this study experimentally observes for the first time high‐pressure‐induced comminution and recrystallization of organic–inorganic hybrid perovskite nanocrystals into highly luminescent nanoplates with a shorter carrier lifetime. Such novel pressure response is attributed to the unique structural nature of hybrid perovskites under high pressure: during the drastic cubic–orthorhombic structural transformation at ≈2 GPa, (301) the crystal plane fully occupied by organic molecules possesses a higher surface energy, triggering the comminution of nanocrystals into nanoslices along such crystal plane. Beyond bulk perovskites, in which pressure‐induced modifications on crystal structures and functional properties will disappear after pressure release, the pressure‐formed variants, i.e., large (≈100 nm) and thin (<10 nm) perovskite nanoplates, are retained and these exhibit simultaneous photoluminescence emission enhancing (a 15‐fold enhancement in the photoluminescence) and carrier lifetime shortening (from ≈18.3 ± 0.8 to ≈7.6 ± 0.5 ns) after releasing of pressure from 11 GPa. This pressure‐induced comminution of hybrid perovskite NCs and a subsequent amorphization–recrystallization treatment offer the possibilities of engineering the advanced hybrid perovskites with specific properties.     

Investigation of Electrode Electrochemical Reactions in CH3NH3PbBr3 Perovskite Single‐Crystal Field‐Effect Transistors

Optoelectronic devices based on metal halide perovskites, including solar cells and light‐emitting diodes, have attracted tremendous research attention globally in the last decade. Due to their potential to achieve high carrier mobilities, organic–inorganic hybrid perovskite materials can enable high‐performance, solution‐processed field‐effect transistors (FETs) for next‐generation, low‐cost, flexible electronic circuits and displays. However, the performance of perovskite FETs is hampered predominantly by device instabilities, whose origin remains poorly understood. Here, perovskite single‐crystal FETs based on methylammonium lead bromide are studied and device instabilities due to electrochemical reactions at the interface between the perovskite and gold source–drain top contacts are investigated. Despite forming the contacts by a gentle, soft lamination method, evidence is found that even at such “ideal” interfaces, a defective, intermixed layer is formed at the interface upon biasing of the device. Using a bottom‐contact, bottom‐gate architecture, it is shown that it is possible to minimize such a reaction through a chemical modification of the electrodes, and this enables fabrication of perovskite single‐crystal FETs with high mobility of up to ≈15 cm² V^?1 s^?1 at 80 K. This work addresses one of the key challenges toward the realization of high‐performance solution‐processed perovskite FETs.     

Reduced Interface‐Mediated Recombination for High Open‐Circuit Voltages in CH3NH3PbI3 Solar Cells

Perovskite solar cells with all‐organic transport layers exhibit efficiencies rivaling their counterparts that employ inorganic transport layers, while avoiding high‐temperature processing. Herein, it is investigated how the choice of the fullerene derivative employed in the electron‐transporting layer of inverted perovskite cells affects the open‐circuit voltage (V_OC). It is shown that nonradiative recombination mediated by the electron‐transporting layer is the limiting factor for the V_OC in the cells. By inserting an ultrathin layer of an insulating polymer between the active CH₃NH₃PbI₃ perovskite and the fullerene, an external radiative efficiency of up to 0.3%, a V_OC as high as 1.16 V, and a power conversion efficiency of 19.4% are realized. The results show that the reduction of nonradiative recombination due to charge‐blocking at the perovskite/organic interface is more important than proper level alignment in the search for ideal selective contacts toward high V_OC and efficiency.     

Pseudohalide‐Induced 2D (CH3NH3)2PbI2(SCN)2 Perovskite for Ternary Resistive Memory with High Performance

Recently, organic–inorganic hybrid perovskites (OIHP) are studied in memory devices, but ternary resistive memory with three states based on OIHP is not achieved yet. In this work, ternary resistive memory based on hybrid perovskite is achieved with a high device yield (75%), much higher than most organic ternary resistive memories. The pseudohalide‐induced 2D (CH₃NH₃)₂PbI₂(SCN)₂ perovskite thin film is prepared by using a one‐step solution method and fabricated into Al/perovskite film/indium–tin oxide (glass substrate as well as flexible polyethylene terephthalate substrate) random resistive access memory (RRAM) devices. The three states have a conductivity ratio of 1:10³:10⁷, long retention over 10 000 s, and good endurance properties. The electrode area variation, impedance test, and current–voltage plotting show that the two resistance switches are attributable to the charge trap filling due to the effect of unscreened defect in 2D nanosheets and the formation of conductive filaments, respectively. This work paves way for stable perovskite multilevel RRAMs in ambient atmosphere.