Properties of amorphous silicon solar cells fabricated from SiH2Cl2

Chlorinated intrinsic amorphous silicon films [a-Si:H(Cl)] and solar cell i-layers were fabricated using electron cyclotron resonance-assisted chemical vapor deposition (ECR-CVD) and SiH₂Cl₂ source gas. n–i–p solar cells deposited on ZnO–coated SnO₂ substrates had poor photovoltaic performances despite the good electronic properties measured on the a-Si:H(Cl) films. Improved open–circuit voltage (V_oc) of 0.84 V and fill factor (FF) of 54% were observed in n–i–p solar cells by providing an n/i buffer layer and by using Ga-doped ZnO coated glass substrates. However, the FF improvement was still rather poor, which is thought to originate from high interface recombination in the ECR deposited solar cells. The V_oc and the FF showed much stable feature against light soaking.     

Power output of Al/SnO2/n-Si solar cell

An Al/SnO₂/n-Si solar cell from n-type silicon (6.5 Ω-cm, 100) wafers using chemical vapour deposition (CVD) has been fabricated. The fabrication details, I–V characteristics determining conversion-efficiency (η_max), open circuit voltage (V_oc) and short circuit current (I_sc) have been presented. A maximum conversion efficiency of 6.3% for an unencapsulated cell of area 85.20 mm² has been obtained.     

Characterization of PV array output using a small number of measured parameters

The purpose of the present study was to develop a sufficiently good fit for the measured I–V curve of a PV module and array using only three easily measurable parameters: —the open-circuit voltage (V_oc); —the short-circuit current (I_sc); —the maximum power (P_m). With an additional three parameters ( ; ; ) it is possible to describe any I–V curve, taking into account cell temperature T and solar radiation Q. This method has been tested on various solar array panels as well as on a single 10 cm dia. solar cell. The difference between the real curve and the proposed fit was found to be less than 3 percent for a fixed temperature and radiation and about 6 percent for various combinations of temperature and radiation.     

New method to extract the model parameters of solar cells from the explicit analytic solutions of their illuminated I–V characteristics

We present a new method to extract the intrinsic and extrinsic model parameters of illuminated solar cells containing parasitic series resistance and shunt conductance. The method is based on calculating the Co-content function (CC) from the exact explicit analytical solutions of the illuminated current–voltage (I–V) characteristics. The resulting CC is expressed as a purely algebraic function of current and voltage from whose coefficients the intrinsic and extrinsic model parameters are then readily determined by bidimensional fitting. The procedure is illustrated by applying it to experimental and synthetic I–V characteristics and an analysis of the errors is presented.     

Cu(In,Ga)Se2 based photovoltaic structure by electrodeposition and processing

CuIn_1−xGa_xSe₂ (CIGS) thin films were formed from an electrodeposited CuInSe₂ (CIS) precursor by thermal processing in vacuum in which the film stoichiometry was adjusted by adding In, Ga and Se. The structure, composition, morphology and opto-electronic properties of the as-deposited and selenized CIS precursors were characterized by various techniques. A 9.8% CIGS based thin film solar cell was developed using the electrodeposited and processed film. The cell structure consisted of Mo/CIGS/CdS/ZnO/MgF₂. The cell parameters such as J_sc, V_oc, FF and η were determined from I–V characterization of the cell.     

Structural, electrical and photovoltaic characterization of Si nanocrystals embedded SiC matrix and Si nanocrystals/c-Si heterojunction devices

Thin films of Si nanocrystals (Si NCs) embedded in a silicon carbide (SiC) matrix (Si-NC:SiC) were prepared by alternating deposition of Si-rich silicon carbide (Si_1−xC_x) and near-stoichiometric SiC mutilayers (Si_1−xC_x/SiC) using magnetron cosputtering followed by a post-deposition anneal. Transmission electron microscopy and Raman spectroscopy revealed that the Si NCs were clearly established, with sizes in the range of 3–5 nm. Optical studies showed an increase in the optical band gap after annealing from 1.4 eV (as-deposited) to 2.0 eV (annealed at 1100 °C). P-type Si-NC:SiC/n-type crystalline silicon (c-Si) heterojunction (HJ) devices were fabricated and their electrical and photovoltaic properties were characterized. The diode showed a good rectification ratio of 1.0×10⁴ at the bias voltage of ±1.0 V at 298 K. The diode ideality factor and junction built-in potential deduced from current–voltage and capacitance–voltage plots are 1.24 and 0.72 V, respectively. Illuminated I–V properties showed that the 1-sun open-circuit voltage, short-circuit current density and fill factor of a typical HJ solar cell were 463 mV, 19 mA/cm² and 53%, respectively. The external quantum efficiency and internal quantum efficiency showed a higher blue response than that of a conventional c-Si homojunction solar cell. Factors limiting the cell's performance are discussed.     

Effects of illumination and Co γ-ray irradiation on the electrical characteristics of porous silicon solar cells

A new approach for hybrid metal–insulator–semiconductor (MIS) Si solar cells is adopted by Institute of Fundamental Problems for High Technology, Ukrainian Academy of Sciences. In order to interpret the effect of illumination and ⁶⁰Co γ-ray radiation dose on the electrical characteristics of solar cells are studied at room temperature. Before the solar cells are subjected to stressed irradiation six different illumination levels of forward and reverse bias I–V measurements are carried out at room temperature. The solar cells are irradiated with ⁶⁰Co γ-ray source irradiation, with a dose rate of 2.12 kGy/h and an over dose range from 0 to 500 kGy. Experimental results shows that both the values of capacitance and conductance increase with increasing illumination levels and give the peaks at high illumination levels. γ-ray irradiation induces an increase in the barrier heights Φ_b(C–V) which are obtained from reverse-bias C–V measurements, whereas barrier heights Φ_b(I–V) which are deducted from forward-bias I–V measurements remain essentially constant. This negligible change of Φ_b(I–V) is attributed to the low barrier height (BH) in regions associated with the surface termination of dislocations. Both the I–V and C–V characteristics indicate that the total-dose radiation hardness of the Si solar cells cannot be neglected according to illumination levels.     

Current transport in copper indium gallium diselenide solar cells comparing mesa diodes to the full cell

Mesa diodes were formed on CdS/CIGS/stainless steel solar cells to investigate current transport when edge leakage and spot defects are avoided. Current conduction mechanisms in the device were determined from current–voltage (I–V) and current–voltage–temperature (I–V–T) characteristics. Space charge limited (SCL) current in the mobility regime with an exponential distribution of traps was found in the voltage range of V>0.6 V based on I∝V^m where m>2. In the voltage region of 0.2V<V<0.6V, recombination was the dominant mechanism based on the ideality factor, n, in the equation I=Ae^(qV/nkT), close to 2. For −0.2V<V<0.2V, a combination of tunneling and SCL current in the ballistic regime was suggested because of the weak temperature dependency and approximation to I∝V^1.5. For the reverse bias region where V<−0.2 V, the device exhibited either SCL current in the velocity saturation regime or tunneling based on the unity I–V relation and the weak temperature dependency. A previous report on full size CIGS cells indicated a higher degree of tunneling for V<0.2 V. Thus, the mesa diodes show some difference in mechanism compared to “good” full cells and much difference compared to “poor” full cells.     

Influence of aminothiazole additives in I/I3 redox electrolyte solution on Ru(II)-dye-sensitized nanocrystalline TiO2 solar cell performance

The influence of aminothiazole additives in acetonitrile solution of an I⁻/I₃⁻ redox electrolyte on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′- bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) (N719) dye-sensitized TiO₂ solar cell was studied. The current–voltage characteristics were investigated under AM 1.5 (100 mW/cm²) for nine different aminothiazole compounds. The aminothiazole additives tested had varying influences on the solar cell performance. Most of the additives enhanced the open-circuit photovoltage (V_oc), but reduced the short circuit photocurrent density (J_sc) of the solar cell. Both the physical and chemical properties of the aminothiazoles were computationally calculated in order to determine the reasons that the additive influenced solar cell performance. The larger the calculated partial charge of the nitrogen atom in the thiazole, the higher the V_oc value. The V_oc value increased as the dipole moment of aminothiazoles in acetonitrile increased. Moreover, the V_oc of the solar cell also increased as the size of the aminothiazole molecules decreased. These results suggest that the electron donicity of the aminothiazole additives influenced the interaction with the TiO₂ photoelectrode, which altered the dye-sensitized solar cell performance.     

An analytical study of the porosity effect on dye-sensitized solar cell performance

The porosity in a dye-sensitized solar cell (DSSC) can affect light absorption and electron diffusion that govern the overall electrical current–voltage (I–V) characteristics. In this research, two methods, namely, constant overlap and variable overlap, were developed to determine the connectivity of dye-sensitized TiO₂ particles in high and low porosity levels, respectively. In turn, the light absorption coefficient α and the electron diffusion coefficient D were analytically derived in terms of the porosity P. Subsequently, the electron diffusion differential equation involving α and D was solved for the I–V output as a function of P. A parametric analysis showed that the optimal porosity was equal to 0.41 for maximum I–V output. The analytical results agree well with experimental data reported in the literature. Besides DSSC, the analytical model can be applied to predict the performance of solid-state DSSC as well as dye-sensitized photoelectrochemical cells applied to hydrogen production and water purification.     

Photoluminescence characteristics of CdS layers deposited in a chemical bath and their correlation to CdS/CdTe solar cell performance

In this work, we study CdS films processed by chemical bath deposition (CBD) using different thiourea concentrations in the bath solution with post-thermal treatments using CdCl₂. We study the effects of the thiourea concentration on the photovoltaic performance of the CdS/CdTe solar cells, by the analysis of the I–V curve, for S/Cd ratios in the CBD solution from 3 to 8. In this range of S/Cd ratios the CdS/CdTe solar cells show variations of the open circuit voltage (V_oc), the short circuit current (J_sc) and the fill factor (FF). Other experimental data such as the optical transmittance and photoluminescence were obtained in order to correlate to the I–V characteristics of the solar cells. The best performance of CdS–CdTe solar cells made with CdS films obtained with a S/Cd ratio of 6 is explained in terms of the sulfur vacancies to sulfur interstitials ratio in the CBD–CdS layers.     

Properties of an n-C:P/p-Si carbon-based photovoltaic cell grown by radio frequency plasma-enhanced chemical vapor deposition at room temperature

The phosphorus-doped amorphous carbon (n-C:P) films were grown by radiofrequency (RF) power-assisted plasma-enhanced chemical vapor deposition (PECVD) at room temperature using a solid phosphorus target. The influence of phosphorus doping on the material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, solar cell properties such as series resistance, short-circuit current density, open-circuit current voltage, fill factor and conversion efficiency along with the spectral response are reported for the fabricated carbon-based n-C:P/p-Si heterojunction solar cells by standard measurement technique. The cells’ performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm², 25 °C). The maximum open-circuit voltage (V_oc) and short-circuit current density (J_sc) for the cells are observed to be approximately 236 V and 7.34 mA/cm², respectively, for the n-C:P/p-Si cell grown at a lower RF power of 100 W. The highest energy conversion efficiency (η) and fill factor (FF) were found to be approximately 0.84% and 49%, respectively. We have observed that the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.     

Influence of pyrazole derivatives in I/I3 redox electrolyte solution on Ru(II)-dye-sensitized TiO2 solar cell performance

The influence of pyrazole additives in an I⁻/I₃⁻ redox electrolyte solution on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′-bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) (N719) dye-sensitized TiO₂ solar cell was studied. The current–voltage characteristics of the cell were measured using 18 different pyrazole derivatives. All of the pyrazole additives enhanced the open-circuit photovoltage (V_oc) and the solar energy conversion efficiency (η), but reduced the short-circuit photocurrent density (J_sc). Most of the pyrazoles improved fill factor (ff). The physical and chemical properties of the pyrazoles were computationally calculated in order to elucidate the reasons for the additive effects on cell performance. The greater the partial charge of the nitrogen atom at position 2 in the pyrazole group, the larger the V_oc, but the smaller the J_sc values. As the dipole moment of the pyrazole derivatives increased, the V_oc value increased, but the J_sc value decreased. The V_oc of the cell also increased as the ionization energy of the pyrazoles decreased. These results suggest that the electron donicity of the pyrazole additives affected the interaction with the nanocrystalline TiO₂ photoelectrode, the I⁻/I₃⁻ electrolyte, and the acetonitrile solvent, which changed the Ru(II)-dye-sensitized solar cell performance.     

Improvement of characteristics of new-type solar cells, having a “transparent conductor/thin Si02 layer with ultrafine metal particles as conductive channels/n-Si” junction

New-type solar cells, having a structure “transparent conductor/thin Si0₂ layer with ultrafine metal islands as conductive channels/n-Si” have been prepared by forming a very thin (< 1.0 nm) silicon oxide (Si0₂) layer as well as platinum (Pt) islands (5–50 nm in size) embedded in it on a single crystal n-type silicon (n-Si) wafer, followed by the deposition of an indium tin oxide (ITO) film (200 nm thick) by the electron-beam evaporation method. The open-circuit photovoltages (V_oc) of the solar cells of the above structure were relatively low, 0.25–0.47 V, but they increased very much to 0.50–0.59 V if a thin (3–10 nm) layer of an organic compound such as copper phthalocyanine (CuPc) was pre-deposited on the Pt-island modified n-Si wafer before the ITO deposition. The reason for the beneficial effect of the pre-deposition of the thin CuPc layer was investigated in detail, and it has been found that certain crystal defects are formed in n-Si near the n-Si/Si0₂ interface during the ITO deposition in the absence of the CuPc layer. The formation of such defects is prevented in the presence of the CuPc layer, which leads to a decrease in surface carrier recombination and hence to the increase in V_oc.     

Preparation of Cu(In,Ga)Se2 thin films from Cu–Se/In–Ga–Se precursors for high-efficiency solar cells

Improved preparation process of a device quality Cu(In,Ga)Se₂ (CIGS) thin film was proposed for production of CIGS solar cells. In–Ga–Se layer were deposited on Mo-coated soda-lime glass, and then the layer was exposed to Cu and Se fluxes to form Cu–Se/In–Ga–Se precursor film at substrate temperature of over 200°C. The precursor film was annealed in Se flux at substrate temperature of over 500°C to obtain high-quality CIGS film. The solar cell with a MgF₂/ITO/ZnO/CdS/CIGS/Mo/glass structure showed an efficiency of 17.5% (V_oc=0.634 V, J_sc=36.4 mA/cm², FF=0.756).     

Dye-sensitized solar cell based on Rose Bengal dye and nanocrystalline TiO2

Dye-sensitized solar cell is fabricated using Rose Bengal dye (RB) for sensitization of nanocrystalline TiO₂ and that imparts extension in spectral response towards visible region by modifying the semiconductor surface. Further, the photoresponse of the cell was evaluated by analyzing its J–V and impedance characteristics under illumination with metal halide light source of 400 W with an incident light of 73 mW/cm². Various photovoltaic parameters like J_sc, V_oc, FF were evaluated and found to be 3.22 mA, 890 mV, 0.53, respectively, resulting conversion efficiency (η) of 2.09%. Impedance analysis of the cell was carried out to investigate the internal resistance of the cell by recording Cole–Cole plots in between real and imaginary impedance in dark and with illumination under variable biasing, i.e. from 0 to 3 V.     

The study on high efficient AlxGa1−xAs/GaAs solar cells

The investigation of Al_xGa_1−xAs/GaAs solar cells is carried out by means of both metalorganic chemical vapor deposition (MOCVD) and liquid-phase epitaxial (LPE) technique. The measurements of illuminated I–V characteristics, dark I–V characteristics and quantum efficiencies were performed for the GaAs solar cells made in author's laboratory. The measuring results revealed that the quality of materials in GaAs solar cell's structures is the key factor for getting high-efficient GaAs solar cells, but the effect of post-growth technology on the performances of GaAs solar cells is also very strong. The 21.95% (AM0, 2×27 cm², 25°C) high conversion efficiency in a typical GaAs solar cell has been achieved owing to improving the quality of materials as well as optimizing the post-growth technology of devices.     

Measurement of CuInSe2 solar cell AC parameters

The AC parameters (cell capacitance and cell resistance) of Copper Indium Diselenide (CuInSe₂) solar cell are measured using time-domain technique. The cell capacitance is calculated from the open circuit voltage decay (OCVD) and cell resistance with solar cell I–V characteristics measured in dark. The solar cell exhibits high parallel resistance and low parallel capacitance. The doping concentration and built in voltage are derived from the 1/C_P² versus bias voltage graph. The built-in voltage of the solar cell shows good agreement with measurements published in the literature.     

Photovoltaic characteristics of phosphorus-doped amorphous carbon films grown by r.f. plasma-enhanced CVD

The phosphorus-doped amorphous carbon (n-C:P) films were grown by r.f. power-assisted plasma-enhanced chemical vapor deposition at room temperature using solid phosphorus target. The influence of phosphorus doping on material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, the solar cell properties such as series resistance, short circuit current density (J_sc), open circuit current voltage (V_oc), fill factor (FF) and conversion efficiency (η) along with the spectral response are reported for the fabricated carbon based n-C:P/p-Si heterojunction solar cell were measured by standard measurement technique. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm², 25 °C). The maximum of V_oc and J_sc for the cells are observed to be approximately 236 V and 7.34 mA/cm², respectively for the n-C:P/p-Si cell grown at lower r.f. power of 100 W. The highest η and FF were found to be approximately 0.84% and 49%, respectively. We have observed the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.     

Dye-sensitized nanocrystalline TiO2 solar cells based on novel coumarin dyes

We have developed dye-sensitized nanocrystalline TiO₂ solar cells (DSSCs) based on novel coumarin-dye photosensitizers. The absorption spectra of these novel dyes are red-shifted remarkably in the visible region relative to the spectrum of C343, a conventional coumarin dye. Introduction of a methine unit (–CH=CH–) connecting the cyano (–CN) and carboxyl (–COOH) groups into the coumarin framework expanded the π-conjugation in the dye and thus resulted in a wide absorption in the visible region. These novel dyes performed as efficient photosensitizers for DSSCs. A DSSC based on 2-cyano-5-(1,1,6,6-tetramethyl-10-oxo-2,3,5,6-tetrahydro-1H,4H,10H-11-oxa-3a-aza-benzo[de]anthracen-9-yl)-penta-2,4-dienoic acid (NKX-2311), produced a 6.0% solar energy-to-electricity conversion efficiency (η), the highest performance among DSSCs based on organic-dye photosensitizers, under AM 1.5 irradiation (100 mW cm^–2) with a short-circuit current density (J_sc) of 14.0 mA cm^–2, an open-circuit voltage (V_oc) of 0.60 V, and a fill factor of 0.71. Our results suggests that the structure of NKX-2311 whose carboxyl group is directly connected to the –CH=CH– unit, is advantageous for effective electron injection from the dye into the conduction band of TiO₂. In addition, the cyano group, owing to its strong electron-withdrawing ability, might play an important role in electron injection in addition to a red shift in the absorption region. On a long-term stability test under continuous irradiation with white light (80 mW cm^–2), stable performance was attained with a solar cell based on the NKX-2311 dye with a turnover number of 2.6×10⁷ per one molecule.