红外系统波段特性比较

随着大量红外探测系统的使用,波段选择显得尤其迫切,它对跟踪探测能力具有极为重要的影响。3－5μm和8－12μm波段一直是红外技术发展应用的重点,3－5μm和8－12μm波段哪个性能更优、费效比更好,是倍受关注的问题。本文将通过试验和理论计算,分析和讨论在各种环境条件下两个波段红外的性能和特点,进行特性比较,研究有关应用的情况,最后,从探测器技术发展、大气传输特性、战场背景条件以及价格水平各方面来综合考察,给出相应的结论。     

利用红外焦平面器件对常规弹丸的跟踪测量研究

文中探讨了利用红外跟踪测量技术对常规快速弹丸目标的跟踪与测量。对靶场试验中常用弹丸目标的光谱辐射特性、背景辐射特性以及大气透过率进行了综合分析,结合试验结果,指出响应工作波段为3－5μm的红外器件最适于作该类目标的成像探测器。在此基础上计算了利用3－5μm红外焦平面探测器对122mm火箭弹进行探测的作用距离,以及红外两站交汇测量系统对122mm火箭弹的交汇测量精度。     

美国专利介绍一种光谱均衡红外干扰弹的烟火成分

由镁／聚四氟乙烯组成的点源红外干扰弹无法控制自身发出的红外辐射，通常情况下，它在波段Ⅰ（2．0～3．0μm）的辐射强度要比飞机大得多，在波段Ⅱ（3．0～4．0μm）次之，在波段Ⅲ（4．0～5．0μm）更小。当其辐射超过飞机辐射时，采用双色转换技术的红外导弹寻的器可以使用两个不同的探测器（例如，在1～3μm波段工作的硫化铅和3～5μm波段工作的碲化铟探测器）来检测两个波段中的能量大小，从而识别出红外干扰弹和飞机。     

海空背景下目标温度场远距离测量研究

红外热成像系统在靶场试验中具有广泛应用,利用热成像系统对海空背景下舰船目标的辐射温度测量是获取舰船辐射特性的重要途径。根据海面舰船目标的辐射特点,考虑海面背景和天空背景的红外辐射、红外辐射在大气中的衰减及程辐射,对3～5μm和8～14μm 2个红外波段目标温度测量进行了分析。     

被动式红外探测器多波段成像的仿真

根据红外成像原理,建立基于Vega的红外仿真系统模型,包括红外场景、红外探测器及大气传输三个模块.首先分析各模块实现原理及方法,研究在不同波段内被动式红外探测器成像的差别.然后介绍Vega平台上红外仿真的设计方法及程序流程图,并实现仿真模型的建立.最后分别得到3～5μM和8～μm波段内红外地面场景的仿真图,并分析不同波段内场景辐射量、大气衰减量及探测器各参数设置对仿真模型中得到的图像亮度的关系.结果表明:被动式红外探测器探测到的辐射量主要由场景自身的温度决定,但是相同条件下在8～μm岬波段内到达探测器的场景辐射量大于在3～5μm波段内到达探测器的场景辐射量.     

双波段红外折衍混合光学成像系统

双波段红外光学成像系统由于具有可以同时对3μm～5μm和8μm～12μm波段进行成像的特点,一直是国内外红外光学系统研究人员研究发展的对象。由于受传统红外光学元件     

红外双波段消热差系统设计

引入了光学材料双波段的平均规化热差系数 T,建立了在3～5μm和8～12μm两个波段上分离透镜消色差、消热差方程组。得到对该光学系统设计的材料选择具有指导作用的三维无热差图,并利用透视投影原理得到相应的投影无热差图。设计了视场4°、有效焦距61mm、F数为2.5、温度范围在-54～71℃、适用于3～5μm和8～12μm双波段的红外光学系统。该系统在3～5μm和8～12μm波段调制传递函数基本达到衍射极限,在空间频率为10lp/mm时,数值分别为0.87和0.68;当温度从-54℃变化到71℃时,数值波动不到0.01;轴向像差在-54～71℃温度范围内,最大值分别为45μm和93μm,都小于相应波段的系统焦深。因此,设计系统具有非常好的双波段消色差、消热差能力。     

红外烟雾对热成像系统识别距离的影响—8—12μm波段的计算机模拟及其…

利用热成像系统静态性能计算机软件包ＳＰＴＩＳ，以坦克和人作为热成像系统瓣识别目标，模拟分析了８－１２μｍ波段红外烟雾对系统识别距离的影响。分析结果对红外烟雾剂的分析、设计具有理论指导意义。     

提高红外诱饵3—5μm选择辐射的途径探讨

虹外诱饵的有效辐射是3—5μm波段的红外辐射，本文就如何提高虹外诱饵在3—5μm波段的选择辐射的三种途径进行了初步探讨。     

薄膜转移工艺制备的128×128规模高架桥式电阻阵

采用新的薄膜转移工艺,成功制备了128×128规模的高架桥式电阻阵。电阻阵的单元尺寸为50μm×50μm,占空比50%。初步测试了该高架桥电阻阵的两个基本指标,微桥的热时间常数和最高等效黑体温度,并对该电阻阵进行了成像实验。采用电学法测试单个微桥的时间常数τ约为4.5 ms,可在100Hz下工作。将整个面阵点亮,在8~12μm波段最高等效黑体温度达到250℃,推测在3~5μm波段最高等效黑体温度超过300±20℃。将整个器件全部点亮并驱动到最高温度时,器件的最大功率为30 W。该电阻阵可成功实现驱动显示成像。测试结果表明该高架桥式电阻阵初步满足红外景象产生器的要求。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.