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1.
The effect of consolidation pressure and crystallite size of powders crystal phases of TiO2 on sintered microstructure of TiO2 ceramics doped with 0.25 mol % Nb and 1.0 mol % Ba were investigated. Also, the development sequence of abnormal grain growth of (niobium, barium) doped TiO2 ceramics was proposed. The second phases of as-sintered surface were determined. The dielectric properties of Ag-electroded samples were correlated with the resistivity of the bulk (Nb, Ba) doped TiO2 ceramics. Abnormal grain growth lowered the resistivity of bulk material of (Nb, Ba) doped TiO2 ceramics, and moved the relaxation frequency of fan δ to high frequency region over 105 Hz. Controlling the sintered microstructures can obtain reasonably good dielectric properties.  相似文献   

2.
Electrical properties of La-(Fe,Mn)-codoped positive temperature coefficient of resistivity (PTCR) BaTiO3 ceramics were studied by combining their diffuse reflectance measurements and electron spin resonance (ESR) spectroscopy. La-(Fe,Mn)-codoped samples showed high durability to reducing atmosphere. It is assumed that Fe and Mn ions segregated in the grain boundary contribute to the density of surface acceptor states, meanwhile localizing electrons in a form of Ti3+ and stabilizing the chemisorbed oxygens through La3+-Mn3+,4+ or La3+-Fe3+ pairs. In addition, ESR signals of Fe3+ in annealed samples was intensified above Curie temperature (Tc), indicating that Fe ions still maintained its high valence states (Fe3+) in the grain boundary even after annealing in reducing atmosphere.  相似文献   

3.
Bismuth ferrite (BiFeO3) ceramics were synthesized by the solid-state reaction method followed by rapid liquid phase sintering. The effect of sintering atmosphere (N2, air and O2) on the structure and electrical properties of BiFeO3 multiferroic ceramics were investigated. XRD analysis revealed that N2 sintering was effective in reducing impurity phases and improving the crystallization behavior. XPS analysis showed that fewer Fe2+ ions but more oxygen vacancies were involved in the N2 sintered ceramics. The SEM investigations suggested that the grain size of the BiFeO3 ceramics sintered in nitrogen are larger than those sintered in air and O2. Electrical measurements revealed that the ceramics sintered in N2 showed lower leakage current, superior dielectric and ferroelectric properties.  相似文献   

4.
The electrical conductivity of Mn doped SnO2 systems prepared by an organic route (Pechini’s method) has been investigated as a function of antimony and niobium concentration. The conductivity increases with the increase of both concentration ions, however, in a different manner. While the conductivity of niobium doped ceramics increases with the power of 1.6 for the entire range of concentrations studied (0.01–0.7 mol%), the conductivity of antimony doped ceramics increases with the power of 1.9 in the range 0.01–0.05 mol% of Sb; 3.7 in the range 0.05–0.30 mol% and 1.8 in the range 0.30–0.70 mol%. This behavior is attributed to the existence of two stable oxidation states for antimony: Sb3+ and Sb5+, while for niobium there is only one: Nb5+. The power of 3.7 for Sb would be related to the segregation of this ion on the grain boundary accompanied by an additional contribution coming from the substitution of Sn2+ by Sb3+ on the grain surface.  相似文献   

5.
The effects of La3+ doped in calcium copper titanate (CCTO) at Ca2+ site and Cu2+ site were examined. The doped compositions, La0.1Ca0.85Cu3Ti4O12 (LCCTO) ceramics and CaLa0.1Cu2.85Ti4O12 (CLCTO) ceramics were prepared by the solid-state method. The microstructure, dielectric properties, complex impedance and nonlinear I–V characteristics were studied. And it was found that La3+ doped at Ca2+ site achieved lower sintering temperatures than that doped at Cu2+ site in CCTO ceramics. The dielectric loss (tan δ) of LCCTO ceramics was about 0.05 at 40 kHz when the sample was sintered at 1080 °C. Dielectric constant (ε′) of LCCTO ceramics was about 3.2 × 104 when the sample was sintered at 1100 °C, which was larger than CLCTO ceramics examined under the same process condition with sintering temperatures vary. The impedance analysis revealed that LCCTO ceramics had an influence of resistance of grain boundaries, which was stronger than that of CLCTO ceramics. Meanwhile, both LCCTO ceramics and CLCTO ceramics had a nonlinear-Ohmic property.  相似文献   

6.
We fabricated porous (Ba,Sr)(Ti,Sb)O3 ceramics by adding potato-starch (1–20 wt %) and investigated the effects of sintering temperature (1300–1450 °C) and time (0.5–10 h) on the positive temperature coefficient of resistivity characteristics of the porous ceramics. The room-temperature electrical resistivity of the (Ba,Sr)(Ti,Sb)O3 ceramics decreased with increasing sintering temperature, while that of the ceramics increased with increasing sintering time. For example, the room-temperature electrical resistivity of the (Ba,Sr)(Ti,Sb)O3 ceramics for the samples sintered at 1300 °C and 1450 °C for 1 h is 6.8×103 and 5.7×102 cm, respectively, while that of the ceramics is 6.5×102 and 1.3×107 cm, respectively, for the samples sintered at 1350 °C for 0.5 h and 10 h. In order to investigate the reason for the decrease and increase of room-temperature electrical resistivity of the samples with increasing sintering temperature and time, the average grain size, porosity, donor concentration of grains (N d), and electrical barrier height of grain boundaries () of the samples are discussed.  相似文献   

7.
Donor doped BaTiO3 (n-BaTiO3) ceramics were fabricated by adding polyethylene glycol (PEG) at 20 wt %. The effects of reducing and oxidizing atmospheres on the PTCR characteristics of the porous n-BaTiO3 ceramics were investigated. The PTCR characteristics of the porous n-BaTiO3 ceramics is strongly affected by chemisorbed oxygen at the grain boundaries and are recovered as the atmosphere is changed from the reducing gas to oxidizing gas. The low room-temperature resistivity of the porous n-BaTiO3 ceramics in reducing atmospheres may be caused by the decrease in potential barrier height, which originates from an increase in the number of electrons owing to the desorption of chemisorbed oxygen atoms at the grain boundaries. In addition, the high room-temperature resistivity of the porous n-BaTiO3 ceramics in oxidizing atmospheres may be caused by the increase in potential barrier height, which results from the adsorption of chemisorbed oxygen atoms at the grain boundaries.  相似文献   

8.
Porous Ba(Ti,Sb)O3 ceramics were fabricated by adding corn-starch at 20 wt %. The effect of atmosphere on the PTCR characteristics of the porous Ba(Ti,Sb)O3 ceramics and the role of oxygen on the grain boundaries in the PTCR characteristics of the Ba(Ti,Sb)O3 ceramics were investigated. In air, O2, N2, and H2 atmospheres, the electrical resistivity of Ba(Ti,Sb)O3 ceramics below 150 °C was independent of atmosphere, while it was strongly dependent on atmosphere above 200 °C. The low electrical resistivity in reducing atmospheres was due to a decrease in potential barrier height, which originated from an increase in the number of electrons owing to the desorption of chemisorbed oxygen atoms at the grain boundaries. In a N2 atmosphere, the electrical resistivity of Ba(Ti,Sb)O3 ceramics during the cooling cycle was lower than that during the heating cycle, and then the electrical resistivity of the porous Ba(Ti,Sb)O3 ceramics during subsequent heating and cooling cycles was increased again by exposure to an O2 atmosphere.  相似文献   

9.
Ba0.8Sr0.2TiO3 ceramics doped with Y2O3 from 0 to 0.10 mol% exhibit normal ferroelectric phase transition, while the ceramics doped with Y2O3 from 0.20 to 0.30 mol% show a giant dielectric constant behavior with loss less than 0.15 at 1 kHz from −40 °C to 140 °C, which is suggested due to semiconductive grain and the Maxwell–Wagner effect by structure disordering in grain boundary. The analyses of unipolar charge for the semiconductive grain indicate three kinds of dielectric processes: thermally stimulated process of unipolar hopping, dispersion process of dielectric constant with frequency, and phase transition process accompanied with disappearance of giant dielectric constant in cubic phase. The XPS results confirm that some of the barium ions are in low energy state to form e-Ba2+ and to provide hopping sites for electrons. The ceramics doped with Y2O3 from 0.50 to 0.75 mol% recover the normal ferroelectricity. The possible mechanics are relevant to binding effect of cation vacancies on electrons.  相似文献   

10.
Lead-free X8R BaTiO3-based ceramics were prepared by conventional solid-state method. The influence of the composition and procedures on the microstructures, lattice parameters and dielectric properties of ceramics materials were systemically studied. XRD results indicate that no secondary phase is formed in the CaZrO3-doped samples after sintering. The content of Ca2+ ions and Zr4+ ions decrease from grain boundaries to grain interiors referring to EDS results, which indicate that the ions mainly locate in the grain boundaries. The Curie temperatures of all CaZrO3 doped samples increase due to the increasing tetragonality caused by the addition of CaZrO3. SEM micrographs reveal that the grain size of CaZrO3-doped BaTiO3-based samples are not uniform, ranging from 0.2 to 0.8 µm. Furthermore, samples doped with 1.0 wt % CaZrO3 exhibit optimal dielectric properties with high temperature stability of capacitance, due to the fine-grain microstructures. Moreover, we obtained a lead-free high performance X8R dielectric ceramic composition sintered at medium temperature (1,135 °C).  相似文献   

11.
The Nb5+ doped (Bi0.5Na0.5)TiO3 (BNT) ceramics were manufactured by a conventional solid state reaction method. The influence of Nb5+ doping on the sintering, microstructure and various electrical properties of BNT ceramics was investigated. The results of X-ray diffraction show that the solubility limit of Nb5+ in the BNT lattice is less than 3%. Additionally, Nb5+ doping produces significant effects on the densification and grain growth of BNT ceramics. Various electrical properties of BNT ceramics are obviously changed with doping a small amount of Nb5+. The ferroelectric and piezoelectric properties display enhanced values at a low doping level. The formation of A-site vacancies is considered as the reason for the changed ferroelectric and electromechanical behavior.  相似文献   

12.
(Ba1?x,Srx)(Zr0.1,Ti0.9)O3 (BSZT) ceramics with x = 0, 0.05, 0.15, 0.25, 0.35 and 0.45 were prepared by conventional solid state reaction method. The structural characterization with X-ray diffraction and scanning electron microscopy indicate a monotonical drop in lattice constants and grain size with the increase of Sr concentration. Consequently, the Curie temperature and remnant polarization of the ceramics exhibit a strong compositional dependence. A linear relationship between the Curie temperature and Sr concentration is revealed. At x = 0.45, the BSZT ceramics show substantially high tunability of over 55 % under 20 kV/cm dc electric field with very low dielectric loss value of 0.0025 at room temperature, suggesting the BSZT ceramics could be a promising alternative to traditional (Ba,Sr) TiO3 ferroelectrics for developing high frequency tunable dielectric devices.  相似文献   

13.
The grain boundary resistivity problem of highly conductive bulk Li0.34La0.55TiO3 perovskite has been investigated by means of impedance spectroscopy and solid‐state NMR of samples processed in controlled atmospheres. The samples were sintered in air, synthetic air, and oxygen, in which the level of moisture varied. A dry atmosphere is critical to obtain dense ceramics with a low grain boundary resistivity. The grain boundary conductivity is five times higher for samples sintered in oxygen atmosphere due to the suppression of Li2CO3 secondary phase formation, which is responsible for low lithium ion diffusion at the grain boundary.  相似文献   

14.
The microstructures, phase structure, and electrical properties have been investigated for the Sb2O3-modified (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 lead-free piezoelectric ceramics. The grain size was strongly affected by Sb2O3, and the solid solutions show a single phase perovskite structure. The ceramics with x = 0.1 % exhibit enhanced electrical properties of d 33 ~556 pC/N, k p ~52 %, ε r ~3,895, tan δ ~1.3 %, and P r ~12.6 μC/cm2 when sintered at a low temperature of ~1,350 °C. The high temperature stability of ferroelectric properties (P r ~14.8 μC/cm2) was obtained in the temperature range from ?60 to 0 °C. And with the addition of small amount of Sb2O3, Curie temperature (T c ) maintains virtually unaltered.  相似文献   

15.
《Materials Letters》2006,60(25-26):3027-3030
Perovskite barium–strontium titanate, (Ba,Sr)TiO3 was prepared and effects of Sb2O3 additives on its PTCR properties were investigated. The (Ba,Sr)TiO3 with 0.05∼0.25 mol% Sb2O3 showed semiconducting PTCR behavior and anomalous grain growth was also observed when sintered at 1360 °C. It was considered that charge compensation by doping Sb2O3 as well as anomalous grain growth by sintering leads to resistivity reduction from insulating to semiconducting transition.  相似文献   

16.
《Materials Letters》2007,61(4-5):1007-1010
Sb2O3-doped Ba0.672Sr0.32Y0.008TiO3 (BSYT) dielectric ceramics were prepared by conventional solid state method, and their dielectric properties were investigated with variation of Sb2O3 doping content and sintering temperature. The X-ray diffraction patterns indicated that all the BSYT specimens possessed the perovskite polycrystalline structure. The experimental results reveal that the introduction of Sb2O3 into Ba0.672Sr0.32Y0.008TiO3 can control the grain growth, reduce the relative dielectric constant and dielectric loss, shift the Curie temperature to lower temperature and significantly improve the thermal stability of the BSYT ceramics. The samples doped with 1.6 wt.% Sb2O3 sintered at 1320 °C for 2 h exhibited attractive properties, including high relative dielectric constant (> 1500), low dielectric loss (< 40 × 10 4), low temperature coefficient of capacitor(< ± 35%) over a wide temperature range from − 25 °C to + 85 °C.  相似文献   

17.
Microstructure and dielectric properties of (Ba1-xCax)z(Ti0.99-yZryMn0.01)O3 (BCTZM) with various cation ratios (A/B) sintered in reducing atmosphere and then annealed to reoxidize the ceramic bodies were investigated. With decreasing A/B cation ratio, concurrent with the grain size reduction, the insulation resistance and lifetime of the BCTZM are both increased. The degradation of insulation resistance is closely related to oxygen partial pressure used during annealing and the resulting microstructure of the ceramics. Within the same volume, the specimen with fine grain size provides more grain boundaries, in comparison to large grain size specimens, which helps in providing an efficient diffusion pathway for oxygen during annealing. The result of oxidation of the Mn, that is, a change in the valence state of Mn from Mn+2 to Mn+3 is confirmed from thermogravimetric analysis and electron paramagnetic resonance analysis.  相似文献   

18.
We investigated the effects of sintering temperature and reoxidation annealing on the positive temperature coefficient of resistance (PTCR) effect of Ba1.022–x Sm x TiO3 ceramics that were sintered at 1,180–1,260 °C for 30 min in a reducing atmosphere and reoxidized at 800 °C for 1 h. Results indicated that the room-temperature (RT) resistivity and resistance jump of the ceramics decreased with increasing sintering temperature; moreover, the samples exhibited a remarkable PTCR effect with a resistance jump of 3.3 orders of magnitude and achieved a low RT resistivity of 374.4 Ω cm at a lower sintering temperature. Furthermore, the higher grain-boundary resistivity of the ceramics obtained at a high reoxidation temperature after sintering at low temperature was estimated using an impedance analyzer. In addition, the voltage versus current behavior was investigated in present study.  相似文献   

19.
(1 ?C x)BaTiO3?xBi0.5K0.5TiO3 (abbreviated as BT?CBKT, where x = 0, 0.1 and 0.2) ceramics were prepared by solid state reaction method. All ceramic samples were sintered in a pure N2 flow atmosphere, subsequently reoxidized at a temperature range of 800?C1,100 °C in air for several hours. The influences of BKT content and reoxidation on the positive temperature coefficient of resistivity (PTCR) behavior of ceramic samples were investigated. BT?CBKT ceramic samples sintered in N2 possessed relatively low room temperature resistivity (??RT) and showed weak PTC effect. Through an appropriate reoxidation, the ceramic samples re-obtained PTC effect of almost three orders of magnitude. With the addition of BKT, the Curie temperature (Tc) was enhanced by ~50 °C than the pure BT ceramics.  相似文献   

20.
We have studied the dielectric properties of microwave ceramic materials in the binary system Zn2TiO4-TiO2 and examined the effect of doping with Sn2+, Sb3+, Bi3+, and Mg2+ on the dielectric properties and microstructure of the ceramics. The doped Zn-Ti-O ceramics are thermally stable and have ? = 18–33 and tan δ from 0.0001 to 0.007. Our results demonstrate that the doped Zn-Ti-O ceramics are potentially attractive for microwave applications, in particular for use as ceramic components (resonator substrates) of miniature antennas.  相似文献   

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