基于A567进行运算放大器DC参数测试技术研究

运算放大器作为一种通用器件，其测试技术比较成熟。为快速解决在测试过程中出现的问题，需对测试系统内部参数测试实现方式做深入了解。本文将以teradyne公司的混合信号测试系统A567为例，对运算放大器的测试理论及技术进行了分析，并提出了一种新的测试实现方式。     

贴片式低电压运算放大器

<正> 运算放大器是模拟电路中最常用的集成电路之一(组成比例放大器、电压跟随器等)。在灵巧型便携式电子产品中,对运算放大器有一些特殊要求,即尺寸小,工作电压低,既能双电源工作又能单电源工作,耗电省(静态电流小),输出电压幅值接近电源电压。本文介绍一组能满足上述要求的运算放大器,其中有单运放、双运放及四运放。它们可采用1～2节电池供电。 1.超小型单运放NJM2107F     

基于JC-5600ATE的单/双电源运算放大器测试方法

集成运算放大器具有成本低、功能多等优点,可广泛用于自动控制系统、测量仪表等其他电子设备中。近年来集成运放的指标在不断提高,性能也在不断提升,伴随着运算放大器的发展,对用来考核运算放大器指标的测试技术也提出了相应的要求,对测试系统(Automatic Testing Equipment,以下简称ATE)的性能要求也相应变高。阐述了单、双电源集成运算放大器在JC-5600ATE上的测试方法,并分析了两者的测试差异。     

数字电位器芯片X9511的应用扩展

鉴于数字电位器本身能够承受的电流和电压有限，文中给出了借助于运算放大器来提高数字电位器的输出电流和电压，以及通过数字电位器的串联和并联来增大数字电位器的阻值范围，提高分辨率的方法；最后给出了借助运算放大器和数字电位器来实现电压／电阻转换的具体方法。     

差动输入差动输出集成电路及其应用

一般的集成运算放大器有两个输入端和一个输出端,称作差动输入单端输出电路。还有一种集成运算放大器有两个输入端和两个输出端,称作差动输入差动输出电路。本文着重介绍几个典型的差动输入差动输出集成电路。一、MC10116集成电路 MC10116集成电路的内部结构如图1所示。由图1可以看出,它是由三级差动放大器——射极跟随器组成。每级差动放大器有8倍左右的增益,三级差动放大器串联后的总增益为512倍左右。为提高共模抑制能力,第一级差动放大器由内部电路提供—1.3V参考电压,使之工作在A类状态。     

集成运算放大器：制造工艺对其性能影响

运算放大器的结构形式主要有三种:模块、混合电路和单片集成电路。对于设计工程师来说,不仅是要知道所用产品的型号,而且还应熟悉生产这些产品的工艺,从而能够从一类放大器中选出一种放大器做特定的应用。表1给出了各种运算放大器结构的性能情况。     

TI打造娱乐通信新世界

自1963年飞兆半导体（Fairchild）推出μA702，标志着单片式集成电路运算放大器正式面世。在消费电子应用的推动下，运算放大器已从体积较大的TO-8金属罐封装缩小为2mm&#215;2mm的微型芯片封装，放大器性能已达到了60年代闻所未闻的水平。     

集成运算放大器的特性及其在音频放大器中的应用（＋）——低电压、低功耗运算放大器OPA2353

一、OPA2353简介 TI／BB公司生产的运算放大器OPA2353与上一回介绍的NS公司生产的LME976一样。也是具有电源电压低、消耗电流小、输入／输出轨到轨特性的双运算放大器集城电路。     

集成运算放大器的特性及其在音频放大器中的应用（＋）——低电压、低功耗运算放大器OPA2353

一、OPA2353简介 TI／BB公司生产的运算放大器OPA2353与上一回介绍的NS公司生产的LME976一样。也是具有电源电压低、消耗电流小、输入／输出轨到轨特性的双运算放大器集城电路。     

运算放大器在电视技术中的应用

近年来,随着集成芯片IC制造工艺的发展和电路结构的更新,高性能运算放大器得到迅速发展（例如：美国模拟器件公司ADI先后采用BIFET,CB和XFCB制造工艺,极大地提高厂高速运放的性能;电流反馈运算放大器输人级采用时极跟随电路代替了传统的电压反馈运算放大器中的长尾对管电路,大大提高了输入级的转换速率）,使得运放在电视技术。通信技术、多媒体技术、精密测量、精密控制以及一般的电子电路设计等领域得到了非常广泛的应用。不同类型运算放大器的性能差别较大,例如：电路结构。封装形式、电路技术、输入特性、输出特性、工作…     

0-40 GHz GaAs MESFET distributed baseband amplifier ICs forhigh-speed optical transmission

We describe distributed amplifiers built using advanced circuit design techniques to improve gain and noise performance at low frequencies. Using these techniques we have developed an amplifier IC with a 0-36 GHz bandwidth and a noise figure of 4 dB at low frequencies. This frequency range starting from 0 Hz makes it possible to use the IC as a baseband amplifier for SDH optical transmission systems and this noise figure is about 1 dB better than conventional distributed amplifiers. We also present another amplifier IC built using our loss compensation technique to improve high-frequency performance of the amplifier. This IC has a 0-44-GHz bandwidth, which is the widest among all reported GaAs MESFET baseband amplifiers     

基于AlGaN/GaN HEMT的功率放大器的研究进展

介绍了几类常见的基于AlGaN／GaN HEMT的微波功率放大器；论述了制造微波功率放大器的两种关键工艺技术——倒装芯片集成(FC-IC)和共平面线(CPW)；分析了自行研制的微波功率放大器核心器件AlGaN／GaN HEMT的性能。     

Two digitally programmable gain amplifiers based on current conveyors

Two digitally programmable gain amplifiers based on current conveyors (CCIIs) are presented. The first digitally programmable gain amplifier consists of a CCII, an operational transconductance amplifier (OTA), and current mirrors. The second one is composed of current conveyor analogue switches (CCASs). Both proposed digitally programmable gain amplifiers do not need switches but they maintain the linear gain at any digital signal levels similar to the digitally programmable gain amplifier using switches; hence the proposed amplifiers are easier to realize, use narrower chip area, and consume lower power. The first proposed amplifier is verified by constructing the circuit using the CCII in an AD844 IC, the OTA in a CA3080 IC, and some bipolar current mirrors. The second proposed amplifier is verified by simulating the circuit using the parameters extracted from the layout (including parasitic capacitance) in the 0.25 μm MOS technology, the level 49 MOS model obtained through MOSIS is used. The results show that the operations of two proposed amplifiers are in accordance with the theories.     

Very Low-Drift Complimentary Semiconductor Network dc Amplifiers

This paper describes a new approach to the fabrication of a variety of monolithic direct coupled amplifiers with typical equivalent differential input drifts of 0.1 to 0.2 /spl mu/v//spl deg/C. These amplifiers exhibit a significant improvement in temperature stability over current state-of-the-art IC amplifiers, and complete with chopper stabilized units in many respects. In these amplifiers, a monolithic silicon wafer is maintained at a near constant temperature by means of an electrically separate temperature-control circuit diffused within the same substrate. A thermal-electrical analogy is used to predict temperature gradients on the surface of the silicon bar. Performance of several amplfier circuit configurations is discussed.     

Transistor oscillator and amplifier grids

Although quasi-optical techniques are applicable to a large variety of solid-state devices, special attention is given to transistors, which are attractive because they can be used as either amplifiers or oscillators. Experimental results for MESFET bar-grid and planar grid oscillators are presented. A MESFET grid amplifier that receives only vertically polarized waves at the input and radiates horizontally polarized waves at the output is discussed. These planar grids can be scaled for operation at millimeter- and submillimeter-wave frequencies. By using modern IC fabrication technology, planar grid oscillators and amplifiers containing thousands of devices can be built, thereby realizing an efficient means for large-scale power combining     

宽带电流反馈运算放大器OPA623及其应用

以电流模技术和互补双极工艺制造的集成电路具有良好的高频性能，用其构成的电流反馈放大器频带宽，转换速率高，在视频和射频信号的放大和处理以及高速数字通信系统中都得到广泛的应用。通过OPA623集成“运放”，简要介绍电流反馈放大器的原理、性能及其在高清晰度电视及有线电视传输中的应用。     

Low-component-count active-only immittance and their application inrealising simple multifunction biquads

The authors present a class of second-order immittance simulation circuits and derive an exemplary multifunction voltage mode biquad. These circuits are realisable with only internally compensated type operational amplifiers and OTAs and do not require any external resistors or capacitors. Because of their active-only nature, the circuits are suitable for implementation in both bipolar or CMOS technologies. The workability of the circuits has been demonstrated by experimental results based upon a μA741 type IC operational amplifier and a CA 3080 type IC OTA     

Brief communication. Active-R realization of current-mode low-pass filters

An active-R realization of current-mode low-pass transfer functions is presented. Since the circuit is composed of only operational amplifiers and resistances, it is suitable for high frequency operation and monolithic IC implementation.     

AR“S”系列微波功率放大器在无线通信测试中的应用

文章介绍了微波功率放大器在无线通讯测试中的应用,详细阐述了可能对此类测试造成影响的3IM、IP3、IMD3等关键参数的原理及其测试方法,介绍了AR＂S＂系列微波功率放大器在此类测试中的独特设计和技术优势。     

FTTH光接收机功率放大器的设计与改进

在分析国内外FTTH光接收机应用前景和普通光接收机的功率放大器基础上,用MMIC替代通用放大模块,设计并经过优化改进找到了一款适合FTTH的CATV光接收机功率放大器.通过测试,性能指标完全符合要求,具有很好的实用价值.