Interface charge induced p-type characteristics of aligned Si(1-x)Gex nanowires

This study reports the electrical transport characteristics of Si(1-x)Gex (x=0-0.3) nanowires. Nanowires with diameters of 50-100 nm were grown on Si substrates. The valence band spectra from the nanowires indicate that energy band gap modulation is readily achievable using the Ge content. The structural characterization showed that the native oxide of the Si(1-x)Gex nanowires was dominated by SiO2; however, the interfaces between the nanowire and the SiO2 layer consisted of a mixture of Si and Ge oxides. The electrical characterization of a nanowire field effect transistor showed p-type behavior in all Si(1-x)Gex compositions due to the Ge-O and Si-O-Ge bonds at the interface and, accordingly, the accumulation of holes in the level filled with electrons. The interfacial bonds also dominate the mobility and on- and off-current ratio. The large interfacial area of the nanowire, together with the trapped negative interface charge, creates an appearance of p-type characteristics in the Si(1-x)Gex alloy system. Surface or interface structural control, as well as compositional modulation, would be critical in realizing high-performance Si(1-x)Gex nanowire devices.     

Ge oxidation in the remaining cores of Si(1-x)Ge(x) nanowires after prolonged oxidation

For this investigation of the Ge behavior of condensed Si(1-y)Ge(y) (y > x) cores during the oxidation of Si(1-x)Ge(x) nanowires, Si(1-x)Ge(x) nanowires were grown in a tube furnace by the vapor-liquid-solid method and thermally oxidized. The test results were characterized using several techniques of transmission electron microscopy. The two types of Ge condensation are related to the diameter and Ge content of the nanowires. The consumption of Si atoms in prolonged oxidation caused the condensed SiGe cores to become Ge-only cores; and the continuous oxidation resulted in the oxidation of the Ge cores. The oxidation of Ge atoms was confirmed by scanning transmission electron microscopy.     

Composition controlled synthesis and Raman analysis of Ge-rich Si(x)Ge(1-x) nanowires

Here, we report the synthesis of Si(x)Ge(1-x) nanowires with x values ranging from 0 to 0.5 using bulk nucleation and growth from larger Ga droplets. Room temperature Raman spectroscopy is shown to determine the composition of the as-synthesized Si(x)Ge(1-x) nanowires. Analysis of peak intensities observed for Ge (near 300 cm(-1)) and the Si-Ge alloy (near 400 cm(-1)) allowed accurate estimation of composition compared to that based on the absolute peak positions. The results showed that the fraction of Ge in the resulting Si(x)Ge(1-x) alloy nanowires is controlled by the vapor phase composition of Ge.     

Electrical transport of bottom-up grown single-crystal Si(1-x)Ge(x) nanowire

In this work, we fabricated an Si(1-x)Ge(x) nanowire (NW) metal-oxide-semiconductor field-effect transistor (MOSFET) by using bottom-up grown single-crystal Si(1-x)Ge(x) NWs integrated with HfO(2) gate dielectric, TaN/Ta gate electrode and Pd Schottky source/drain electrodes, and investigated the electrical transport properties of Si(1-x)Ge(x) NWs. It is found that both undoped and phosphorus-doped Si(1-x)Ge(x) NW MOSFETs exhibit p-MOS operation while enhanced performance of higher I(on)～100?nA and I(on)/I(off)～10(5) are achieved from phosphorus-doped Si(1-x)Ge(x) NWs, which can be attributed to the reduction of the effective Schottky barrier height (SBH). Further improvement in gate control with a subthreshold slope of 142?mV?dec(-1) was obtained by reducing HfO(2) gate dielectric thickness. A comprehensive study on SBH between the Si(1-x)Ge(x) NW channel and Pd source/drain shows that a doped Si(1-x)Ge(x) NW has a lower effective SBH due to a thinner depletion width at the junction and the gate oxide thickness has negligible effect on effective SBH.     

Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires

The Ga(x)In(1-x)Sb ternary system has many interesting material properties, such as high carrier mobilities and a tunable range of bandgaps in the infrared. Here we present the first report on the growth and compositional control of Ga(x)In(1-x)Sb material grown in the form of nanowires from Au seeded nanoparticles by metalorganic vapor phase epitaxy. The composition of the grown Ga(x)In(1-x)Sb nanowires is precisely controlled by tuning the growth parameters where x varies from 1 to ～0.3. Interestingly, the growth rate of the Ga(x)In(1-x)Sb nanowires increases with diameter, which we model based on the Gibbs-Thomson effect. Nanowire morphology can be tuned from high to very low aspect ratios, with perfect zinc blende crystal structure regardless of composition. Finally, electrical characterization on nanowire material with a composition of Ga(0.6)In(0.4)Sb showed clear p-type behavior.     

Band-gap modulation in single-crystalline Si1-xGex nanowires

We report the energy band-gap modulation of single-crystalline Si1-xGex (0 相似文献   

Role of confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires

We examine the impact of shell content and the associated hole confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires (NWs). Using NWs with different Si(x)Ge(1-x) shell compositions (x = 0.5 and 0.7), we fabricate NW field-effect transistors (FETs) with highly doped source/drain and examine their characteristics dependence on shell content. The results demonstrate a 2-fold higher mobility at room temperature, and a 3-fold higher mobility at 77K in the NW FETs with higher (x = 0.7) Si shell content by comparison to those with lower (x = 0.5) Si shell content. Moreover, the carrier mobility shows a stronger temperature dependence in Ge-Si(x)Ge(1-x) core-shell NWs with high Si content, indicating a reduced charge impurity scattering. The results establish that carrier confinement plays a key role in realizing high mobility core-shell NW FETs.     

Size dependent magnetization and high-vacuum annealing enhanced ferromagnetism in Zn(1-x)Co(x)O nanowires

Diameter controllable ZnO nanowires have been fabricated by thermal evaporation (vapor transport) with various sizes of gold nanoparticles as catalysts. Diluted magnetic semiconductor (DMS) Zn(1-x)Co(x)O nanowires were then made by high energy Co ion implantation. The as-implanted and the argon-annealed Zn(1-x)Co(x)O nanowires displayed weak ferromagnetism while the high-vacuum annealed nanowires exhibited strong ferromagnetic ordering at room temperature. Size dependent behavior has been observed in the magnetic field and temperature dependences of magnetization. The shrinkage of the nanowire diameter reduced the spontaneous magnetization as well as the hysteresis loops. Field cooled and zero-field cooled magnetization and coercivity measurements were performed between 2 and 300 K to study the evolution of magnetism from the weak to the strong ferromagnetic states. In particular, superparamagnetic features were observed and shown to be intrinsic characteristics of the DMS Zn(1-x)Co(x)O nanowires. The room-temperature spontaneous magnetization of individual Zn(1-x)Co(x)O nanowires was also established by using magnetic force microscope measurements.     

Diffusion in Si(x)Ge(1-x)/Si nanowire heterostructures

Si0.48Ge0.52/Si tip/nanowire heterostructures were grown by pulsed laser vaporization (PLV) at a growth temperature of 1100 degrees C. Ge diffusion in [111]-growth Si nanowires was studied for different post-synthesis annealing temperatures from 200 degrees C to 800 degrees C. Ge composition profiles were quantified by energy-dispersive X-ray spectroscopy in a transmission electron microscope. The compositional profiles were modeled by a limited-source diffusion model to extract temperature-dependent diffusion coefficients. The Ge diffusion coefficients followed an Arrhenius relationship with an activation energy of 0.622 +/- 0.050 eV. This rather low activation energy barrier is similar to the previously reported activation energy barrier of 0.67 eV for Ge surface diffusion on Si, suggesting that surface diffusion may dominate in nanowires at this length scale.     

Metastable Ge1-xCx alloy nanowires

Carbon-containing alloy materials such as Ge(1-x)C(x) are attractive candidates for replacing silicon (Si) in the semiconductor industry. The addition of carbon to diamond lattice not only allows control over the lattice dimensions, but also enhances the electrical properties by enabling variations in strain and compositions. However, extremely low carbon solubility in bulk germanium (Ge) and thermodynamically unfavorable Ge-C bond have hampered the production of crystalline Ge(1-x)C(x) alloy materials in an equilibrium growth system. Here we successfully synthesized high-quality Ge(1-x)C(x) alloy nanowires (NWs) by a nonequilibrium vapor-liquid-solid (VLS) method. The carbon incorporation was controlled by NW growth conditions and the position of carbon atoms in the Ge matrix (at substitutional or interstitial sites) was determined by the carbon concentration. Furthermore, the shrinking of lattice spacing caused by substitutional carbon offered the promising possibility of band gap engineering for photovoltaic and optoelectronic applications.     

Growth of Zn(1_x)Mg(x)O and Zn(1_x)Cd(x)O nanowires and the application in light emitting devices

Magnesium and Cadmium doped ZnO nanowires were successfully grown by Chemical Vapor deposition method in a tube furnance. Photoluminescence spectra show that the band gap of ZnO nanowire has been tuned from 4.00 eV to 2.08 eV by Magnesium and Cadmium doping. Transmission Electron Microscopy and X-ray diffraction characterization analysis indicate that most of the formed nanowires are single crystalline with good quality. Zn(1-x)Cd(x)O nanowire sample was used for heterojunctional light emitting diode fabrication. Electroluminescence measurement yields a strong emission peak at 553 nm from the Zn(1-x)Cd(x)O nanowire.     

SiGe nanowire growth and characterization

Single-crystal SiGe nanowires were synthesized via the vapour-liquid-solid (VLS) growth mechanism using disilane and germane as precursor gases. We have investigated the effect of temperature, pressure, and the inlet gas ratio on the growth and stoichiometry of Si(x)Ge(1-x) nanowires. The nanowires were characterized using scanning and transmission electron microscopies and energy dispersive x-ray analysis. It was found that nanowires with a Si:Ge ratio of about 1 had smooth surfaces, whereas departure from this ratio led to rough surfaces. Electrical properties were then investigated by fabricating back-gated field effect transistors (using a focused ion beam system) where single SiGe nanowires served as the conduction channels. Gated conduction was observed although resistance in the undoped devices was high.     

Self-organized Ce(1-x)Gd(x)O(2-y) nanowire networks with very fast coarsening driven by attractive elastic interactions

Assembling arrays of ordered nanowires is a key objective for many of their potential applications. However, a lack of understanding and control of the nanowires' growth mechanisms limits their thorough development. In this work, an appealing new path towards self-organized epitaxial nanowire networks produced by high-throughput solution methods is reported. Two requisites are identified to generate the nanowires: a thermodynamic driving force for an unrestricted elongated equilibrium island shape, and a very fast effective coarsening rate. These requirements are met in anisotropically strained Ce(1-x)Gd(x)O(2-y) nanowires with the (011) orientation grown on the (001) surface of LaAlO(3) substrates. Nanowires with aspect ratios above ≈100 oriented along two mutually orthogonal axes are obtained leading to labyrinthine networks. A very fast effective nanowire growth rate (≈60 nm min(-1)) for ex-situ thermally annealed nanostructures derives from simultaneous kinetic processes occurring in a branched network. Ostwald ripening and anisotropic dynamic coalescence, both promoted by strain-driven attractive nanowire interaction, and rapid recrystallization, enabled by fast atomic diffusion associated with a high concentration of oxygen vacancies, contribute to such an effective growth rate. This bottom-up approach to self-organized nanowire growth has a wide potential for many materials and functionalities.     

On the formation and photoluminescence of Si(1-x)Ge(x) nanoparticles

Si(1-x)Ge(x) nanoparticles were prepared from two annealed alloy ingots at the compositions of Si:Ge = 9.5:0.5 and 9:1 using a vapor condensation technique under Ar atmosphere. These nanoparticles are all spherical, and increasing the working pressure leads to an increased particle size and size dispersion. Comparing to the alloy ingots, the nanoparticles have a higher average content of Ge. In addition, increasing the working pressure also causes the Si(1-x)Ge(x) nanoparticles to become more Ge-rich. This can be ascribed to the lower melting point and higher kinetic energy of Ge than Si during the evaporation process. The photoluminescence of Si(1-x)Ge(x) nanoparticles ranges from visible light to infrared region, and the luminescence peak exhibits a red shift as the Ge content in the nanoparticles increases. This indicates that the incorporation of Ge into Si has a dominant effect in the radiative recombination process, in comparison with the constant luminescence peak position in the case of pure Si nanoparticles with similar size distribution.     

Misfit-guided self-organization of anticorrelated ge quantum dot arrays on si nanowires

Misfit-strain guided growth of periodic quantum dot (QD) arrays in planar thin film epitaxy has been a popular nanostructure fabrication method. Engineering misfit-guided QD growth on a nanoscale substrate such as the small curvature surface of a nanowire represents a new approach to self-organized nanostructure preparation. Perhaps more profoundly, the periodic stress underlying each QD and the resulting modulation of electro-optical properties inside the nanowire backbone promise to provide a new platform for novel mechano-electronic, thermoelectronic, and optoelectronic devices. Herein, we report a first experimental demonstration of self-organized and self-limited growth of coherent, periodic Ge QDs on a one-dimensional Si nanowire substrate. Systematic characterizations reveal several distinctively different modes of Ge QD ordering on the Si nanowire substrate depending on the core diameter. In particular, Ge QD arrays on Si nanowires of around 20 nm diameter predominantly exhibit an anticorrelated pattern whose wavelength agrees with theoretical predictions. The correlated pattern can be attributed to propagation and correlation of misfit strain across the diameter of the thin nanowire substrate. The QD array growth is self-limited as the wavelength of the QDs remains unchanged even after prolonged Ge deposition. Furthermore, we demonstrate a direct kinetic transformation from a uniform Ge shell layer to discrete QD arrays by a postgrowth annealing process.     

Spin polarization measurement of homogeneously doped Fe(1-x)Co(x)Si nanowires by Andreev reflection spectroscopy

We report a general method for determining the spin polarization from nanowire materials using Andreev reflection spectroscopy implemented with a Nb superconducting contact and common electron-beam lithography device fabrication techniques. This method was applied to magnetic semiconducting Fe(1-x)Co(x)Si alloy nanowires with x? = 0.23, and the average spin polarization extracted from 6 nanowire devices is 28 ± 7% with a highest observed value of 35%. Local-electrode atom probe tomography (APT) confirms the homogeneous distribution of Co atoms in the FeSi host lattice, and X-ray magnetic circular dichroism (XMCD) establishes that the elemental origin of magnetism in this strongly correlated electron system is due to Co atoms.     

In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires

Growth of GaAs and In(x)Ga(1-x)As nanowires by the group-III assisted molecular beam epitaxy growth method on (001)GaAs/SiO(2) substrates is studied in dependence on growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temperatures as low as 550?°C. The incorporation of indium was studied by low temperature micro-photoluminescence spectroscopy, Raman spectroscopy and electron energy loss spectroscopy. The results show that the incorporation of indium achieved by lowering the growth temperature does not have the effect of increasing the indium concentration in the bulk of the nanowire, which is limited to 3-5%. For growth temperatures below 575?°C, indium rich regions form at the surface of the nanowires as a consequence of the radial growth. This results in the formation of quantum dots, which exhibit spectrally narrow luminescence.     

几种Si、Ge纳米线导热系数的原子模拟

采用非平衡分子动力学方法模拟了Si纳米线、Ge纳米线、核-壳结构的Si/Ge纳米线及超晶格结构的Si/Ge纳米线的导热系数,给出了纳米线的温度与导热系数关系曲线,对比了几种纳米线导热特性的差异,研究结果表明,随着温度的升高,各纳米线的导热系数降低;相同温度下,纳米线导热系数的大小顺序为：核-壳结构的Si/Ge纳米线、超晶格结构的Si/Ge纳米线、Si纳米线、Ge纳米线。     

Electrical characterization of composition modulated In(1-x)Sb(x) nanowire field effect transistors by scanning gate microscopy

In this work high quality crystalline In(1_x)Sb(x) nanowires (NWs) are synthesized via a template-based electrochemistry method. Energy dispersive spectroscopy studies show that composition modulated In(1-x)Sb(x) (x approximately 0.5 or 0.7) nanowires can be attained by selectively controlling the deposition potential during growth. Single In(1-x)Sb(x) nanowire field effect transistors (NW-FETs) are fabricated to study the electrical properties of as-grown NWs. Using scanning gate microscopy (SGM) as a local gate the I(ds)-V(ds) characteristics of the fabricated devices are modulated as a function of the applied gate voltage. Electrical transport measurements show n-type semiconducting behavior for the In0.5Sb0.5 NW-FET, while a p-type behavior is observed for the In0.3Sb0.7 NW-FET device. The ability to grow composition modulated In(1-x)Sb(x) NWs can provide new opportunities for utilizing InSb NWs as building blocks for low-power and high speed nanoscale electronics.     

高真空化学气相外延炉的研制

研制出满足Ｓｉ１－ｘＧｅｘ异质结薄膜材料生长工艺的高真空化学气相外延炉,介绍了Ｓｉ１－ｘＧｅｘ异质结薄膜材料的生长工艺,详述了该气相外延设备的性能指标、结构组成和设计原理,并且给出了利用该设备生长Ｓｉ１－ｘＧｅｘ异质薄膜的实验结果。