纳米尺度分子内荧光淬灭效应的研究

本实验将自聚发光分子四苯基乙烯(TPE)和聚集淬灭分子阿霉素(DOX)连接为荧光分子复合物(TPEDOX conjugate,TD),并通过荧光光谱分析和扫描电镜观察结合的方法,对TD纳米聚集体中TPE和DOX的荧光淬灭机制进行了研究。实验发现,在TD分子内,TPE和DOX之间发生了"能量传递接力"的现象,即TPE通过荧光能量共振转移将能量传递给DOX,导致自身荧光发射淬灭;DOX由于TD纳米聚集体的形成,发生了聚集淬灭现象,致使TPE转移的能量和DOX自身的荧光发射均被淬灭,达到一个荧光双淬灭的效果。研究中采用荧光分析与电镜观察结合的方法,阐述了将两种具有相反发光性质的荧光分子在纳米尺度的荧光淬灭机理,为纳米尺度上的分子内荧光淬灭研究提供了理论依据。     

基于荧光猝灭原理的光纤溶解O2传感特性研究

采用荧光猝灭法检测溶解O2浓度。以邻菲咯啉钌作为荧光指示剂,用溶胶-凝胶法制备含有荧光指示剂的敏感材料,采用塑料光纤作为传感和传光元件,传感头做成U型以提高灵敏度,采用相移法实现对荧光寿命的测定。通过实验得出,溶解O2浓度在10mg/L以下时,荧光指示剂的荧光寿命与溶解O2浓度呈线性关系,实验测得该传感器的检测下限是0.36mg/L,系统的灵敏度为0.02mg/L。     

One-pot synthesis of ZnO/reduced graphene oxide nanocomposite for supercapacitor applications

ZnO/reduced graphene oxide (RGO) nanocomposite films were prepared by the sol–gel deposition method using a combination of zinc acetate and graphite. The solution derived composite films were extensively characterized using high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), X-ray diffraction (XRD), UV–visible spectroscopy, photoluminescence emission measurements, and four probe measurements. It was found that a highly transparent film with low resistivity could be obtained with the addition of a small amount of RGO into the deposition precursor. The results also showed that the sintering temperature reduces the resistivity and transparency of the films. XRD measurements revealed that films sintered >500 °C exhibit additional peaks, and suggest nucleation of different phases of the films. As a demonstration, the ZnO/RGO composite was integrated into a supercapacitor, and the resulting energy storage performance was tested.     

乙酸溶液荧光猝灭的机理研究

从理论上对紫外光激励乙酸产生荧光及荧光猝灭机理分别进行了分析研究.结果表明,乙酸溶液在253.7nm紫外光照射下可以发出明显的荧光,而且随着溶液浓度的变化产生了荧光猝灭的现象.分析认为,荧光猝灭的主要原因是动态猝灭过程-由最低激发单重态(n,π)转入三重态(π,π)所致,并对淬灭常数进行了计算.研究乙酸本体荧光特性及荧光猝灭机理可为其作为猝灭剂、溶剂、催化剂和食品添加剂时其它分子荧光光谱的研究提供参考.     

Improvement of visible light photocatalytic activity over graphene oxide/CuInS2/ZnO nanocomposite synthesized by hydrothermal method

In this study, graphene oxide/CuInS₂/ZnO as a new photocatalyst with light absorption properties in the visible region were successfully synthesized via hydrothermal route. The UV–vis absorption spectra of the catalyst suggested that the graphene oxide/CuInS₂/ZnO is active under visible light. It was evaluated the photocatalytic activities of graphene oxide/CuInS₂/ZnO on the degradation of Rhodamine B under visible light irradiation and was found that the graphene oxide/CuInS₂/ZnO obtained exhibit photocatalytic activity higher than single ZnO and CuInS₂/ZnO. Presence of graphene oxide with high specific surface area and great conductivity make it as a good support for CuInS₂/ZnO and improves removal efficiency for degradation of Rhodamine B.     

Effect of characteristic properties of graphene oxide on reduced graphene oxide/Si schottky diodes performance

We investigated the effect of the size of graphene oxide (GO) sheets made with two different types of GO solution on the performance of Si-based solar cells. Large-sized reduced GO (rGO) with an in-plane crystalline diameter of 3.42 nm has smaller defect sites and thus the Si/rGO Schottky junction solar cell shows a lower leakage current than the solar cell with small-sized rGO (i.e. an in-plane crystalline diameter of 3.03 nm). Enhanced open-circuit voltage (V_oc) and improved short-circuit current (J_sc) are observed for the solar cell with large-sized rGO due to the increased work function and Schottky barrier height at the Si and rGO junction. In other words, an increased built-in potential and a wider depletion region of the solar cell with large-sized rGO contribute to the increased carrier absorption and generation. These findings indicate that (i) rGO acts as a good transparent conducting layer and hole-transporting layer, and (ii) the control of rGO size in Si/rGO Schottky junction solar cell is important to improve the performance.     

皮秒激光直写还原石墨烯氧化物薄膜的研究

利用皮秒激光直写还原绝缘石墨烯氧化物(GO) 薄膜,成功制备了图案化的导电石墨烯。先 通过旋涂法制备GO薄膜,再使用皮秒激光进行直写扫描,可以同步实现GO的还原和图案化 两个关键步 骤。光学显微镜成像显示,还原前后GO颜色发生明显变化,图案结构清晰,分辨率较高。结 合拉曼光谱和 X光电子能谱(XPS)进行表征分析的结果表明,激光直写区域石墨层缺陷程度和 含氧量均明显降低,GO还 原程度较高。图案化还原后GO(RP-GO)薄膜电学测试的结果表明,可以通过 改变皮秒激光 的输出功率对RP-GO的导电性能进行调控。本文技术一次性解决了石墨烯的大规模制备、图 案化成形和电学 性能调控三大难题,开辟了石墨烯基微电子器件生产制造的新道路。     

Composite structure of ZnO films coated with reduced graphene oxide: structural,electrical and electrochemical properties

ZnO films coated with reduced graphene oxide (RGO-ZnO) were prepared by a simple chemical approach.The graphene oxide (GO) films transferred onto ZnO films by spin coating were reduced to RGO films by two steps (exposed to hydrazine vapor for 12 h and annealed at 600 ℃).The crystal structures,electrical and photoluminescence properties of RGO-ZnO films on quartz substrates were systematically studied.The SEM images illustrated that RGO layers have successfully been coated on the ZnO films very tightly.The PL properties of RGO-ZnO were studied.PL spectra show two sharp peaks at 390 nm and a broad visible emission around 490 nm.The resistivity of RGO-ZnO films was measured by a Hall measurement system,RGO as nanofiller considerably decrease the resistivity of ZnO films.An electrode was fabricated,using RGO-ZnO films deposited on Si substrate as active materials,for super capacitor application.By comparison of different results,we conclude that the RGO-ZnO composite material couples possess the properties of super capacitor.     

Atomic layer deposition of ZnO on graphene for thin film transistor

A ZnO/graphene composite thin film was obtained by depositing ZnO on graphene through an Atomic Layer Deposition (ALD) process. The graphene layer was synthesized through a Chemical Vapor Deposition (CVD) process. The achievement of ZnO deposition on graphene was attributed to the Perylene Tetracarboxylic Acid (PTCA) treatment on graphene. Both ZnO Thin Film Transistor (TFT) and ZnO/graphene TFT were fabricated and tested. The results show that both of them displayed a high ON/OFF ratio, while ZnO/graphene TFT displayed an enhanced carrier mobility over ZnO TFT.     

Optical super-resolution effect induced by nonlinear characteristics of graphene oxide films

In this work, we focus on the optical super-resolution effect induced by strong nonlinear saturation absorption (NSA) of graphene oxide (GO) membranes. The third-order optical nonlinearities are characterized by the canonical Z-scan technique under femtosecond laser (wavelength:800 nm, pulse width:100 fs) excitation. Through controlling the applied femtosecond laser energy, NSA of the GO films can be tuned continuously. The GO film is placed at the focal plane as a unique amplitude filter to improve the resolution of the focused field. A multi-layer system model is proposed to present the generation of a deep sub-wavelength spot associated with the nonlinearity of GO films. Moreover, the parameter conditions to achieve the best resolution (~l/6) are determined entirely. The demonstrated results here are useful for high density optical recoding and storage, nanolithography, and super-resolution optical imaging.     

银纳米立方体对诺丹明分子的荧光增强或猝灭效应实验研究

用乙二醇还原硝酸银,成功制备了平均边长约97 nm的银纳米立方体以用于诺丹明(RhB)分子的荧光实验。实验中,将探针分子 RhB 粉末掺杂于PMMA苯甲醚溶液中,制得不同厚度参杂有RhB探针分子的PMMA薄膜,运用光谱技术和共焦显微技术研究了银纳米立方体与荧光分子的间隔、银纳米立方体不同浓度分布对RhB分子的荧光强度的影响。荧光光谱表明,荧光强度随PMMA厚度变薄而增强,当PMMA厚度为10nm时,荧光增强因子最大,获得了56倍的荧光增强效果,而继续减小PMMA厚度时,其荧光增强因子又变小,说明发生了荧光猝灭效应。共焦荧光像则更直观地表现了银纳米立方体的浓度分布对荧光分子辐射增强的影响。因而,可通过调控银纳米立方体与荧光分子的距离及银纳米立方体的分布优化荧光增强因子以用于基于荧光的单分子探测,这一实验结果在生物成像和生物传感领域有潜在应用价值。     

基于量子点荧光淬灭技术的痕量Cu2+检测传感器研究

本文设计了一种可用于现场检测的痕量Cu2+传感器,运用自行研制的光学感知与信号处理模块实现痕量Cu2+的快速检测,达到了检测仪器的低成本、小型化的目的.实验结果表明,在Cu2+浓度50-1000nmol/L范围内传感器检测结果具有较好的线性关系,拟合后的直线方程为Y=0.11869* X+ 14.47268,线性度为0.99358,标准方差为4.63099,传感器响应时间为50秒,检测的可重复性较好,该传感器可以满足痕量Cu2+现场检测的需求.     

电泳法制备ZnO纳米薄膜研究

报导了一种简单而有效的制备ZnO纳米薄膜的方法。以纳米ZnO和Mg(NO3).6H2O的异丙醇溶液作为电泳膜的沉积液,采用电泳法在ITO衬底玻璃上制备了高质量的ZnO纳米薄膜,并用透射电镜(TEM)、X射线衍射(XRD)、Raman谱和光致发光(PL)谱等对所制得的薄膜进行了表征。XRD表明,ZnO电泳膜是多晶膜且具有纤维锌矿结构;Raman谱和PL谱表明,ZnO纳米薄膜具有较强的紫外发射,其峰值波长为384 nm,而它的可见发射几乎观察不到,表明ZnO电泳膜是高质量的。     

Bi掺杂ZnO籽晶层生长纳米ZnO薄膜性能研究

采用溶胶 凝胶法制备得到不同浓度Bi3+掺杂ZnO籽晶层,又进一步采用水热法合成了六方纤锌矿结构的ZnO纳米棒。通过X线衍射（XRD）、场发射扫描电子显微镜（FESEM）、光致发光（PL）谱等测试手段对样品结构、形貌和光学性能进行测试和表征。结果表明,在不同浓度Bi掺杂ZnO籽晶层上生长纳米ZnO薄膜,ZnO的晶体结构没有改变,均为六方纤锌矿结构,且(002)晶面的峰强明显高于其他晶面的峰强值;在FESEM电镜观察下发现,不同掺杂浓度Bi掺杂ZnO籽晶层上水热生长的纳米ZnO薄膜均为纳米棒状。PL光谱显示随着Bi掺杂量增加,样品的近紫外发射峰和晶格缺陷峰等峰值明显增大,且有红移现象产生。其中禁带宽度随着Bi掺杂量的增大而减小,说明Bi3+可以有效地调节ZnO的禁带宽度。     

Stable photovoltaic cells based on graphene oxide/indium zinc oxide bilayer anode buffer

We report a solution-processed graphene oxide (GO) functioned as an anode buffer layer in organic photovoltaic cells (OPVs). The OPVs using indium zinc oxide (IZO), IZO/GO, GO/IZO, and poly(3,4-thylenedioxythiophene) doped poly(styrene sulfonate) (PEDOT:PSS) as a control device, exhibited the conversion efficiency of 3.4%, 3.5%, 3.9% and 3.4%, respectively. No obvious degradation was discovered for the OPVs with incorporating GO as one of the anode buffer layers after 1 h continuous illumination under AM1.5. On the other hand, after only 1 h continuous illumination, a momentous degradation was observed for the OPVs without the presence of GO. All these results demonstrate that the GO layer plays an important role in the improvement of the stability with conventional device architecture.     

Ga掺杂ZnO氧化物的热学性能的研究

在密度泛函理论和线性响应的密度泛函微扰理论基础上通过第一性原理计算的方法研究了Ga掺杂ZnO氧化物的热学参数和热学性能.计算结果表明,Ga掺杂使ZnO氧化物晶胞增大;在所研究温度范围内,纯的ZnO和Ga掺杂的ZnO的晶格热容均随温度升高不断增大,其晶格热容在最高温度900 K分别达到16.5 Cal.mol^-1K^-1和31.3 Cal.mol^-1K^-1.纯的ZnO和Ga掺杂的ZnO的德拜温度θ_D均随温度升高不断增大.Ga掺杂在ZnO中引入了新的振动模式.     

MOCVD法氧化锌单晶薄膜生长

介绍了氧化锌材料的一些突出特性以及生长氧化锌的方法。并通过金属有机化学气相沉积 (MOCVD)方法制备了优良的氧化锌薄膜。使用X射线衍射 (XRD)谱和室温光致发光(PL)光谱对所生长氧化锌薄膜的晶体质量和光学特性进行了研究。X射线衍射谱图显示仅在2θ =34.72°处有一个很陡峭的ZnO (0 0 2 )晶面衍射峰 ,说明所制备的氧化锌薄膜c轴取向高度一致。此衍射峰的半高宽为 0 .2 82° ,显示出较好的晶体质量。在室温光致发光谱中 ,薄膜的紫外发光强度与深能级复合发光的强度比超过 10∶1,表明薄膜的光学质量较高     

MoO3修饰氧化石墨烯作为空穴注入层影响研究

研究了MoO₃修饰氧化石墨烯(GO)作为空穴注入层的影响。采用旋涂的方法制备了GO, 再真空蒸镀修饰层MoO₃,得到了空穴注入能力强和透过率高的复合薄膜。MoO₃的厚分 别采用0、3、5和8nm。通过优化MoO₃的厚度发现,当MoO₃的厚为5nm时,复合薄膜 的透过率达到最大值,在 550nm的光波长下透光率为88%,且此时采用 复合薄膜作为空穴注入层制备的结构为 ITO/GO/MoO₃(5nm)/NPB(40nm)/Alq₃(40nm)/LiF(1nm)/Al(100nm)的有机电致发光器件(OLED)性能 最佳。通过对OLED进一步的优化,改变Alq₃的厚度,分别取50、60和70nm,测量其电压 、电流、亮度、色坐标和电致发光(EL)光谱等参数发现,当Alq₃的厚为50nm时器件性能最 佳。最终制备了结构为ITO/GO/MoO₃(5nm)/NPB(50nm)/Alq₃(50nm)/LiF(1nm)/Al(100 nm)的OLED,在电压为10V时,最大电流效率达到5.87cd/A,与GO单独作为空穴注入层制备的器件相比,提高了50%。     

球墨铸铁曲轴激光淬火试验研究

介绍了激光淬火球铁曲轴的优点,提出了一种激光淬火球铁曲轴圆角部分扫描的新方法。通过优化激光淬火球铁曲轴的参数,对球铁曲轴进行了实验,实测了激光淬火后硬化层的深度、表面硬化层的硬度及表面残余应力。实验还表明曲轴激光淬火前后变形量较小,抗疲劳性能优良,淬火带内存在较大残余压应力,为改进曲轴表面处理方法提供了依据,具有广泛的应用前景。     

有序结构ZnO的自组装生长及光学性能研究

利用重力场下的自组装,将单分散的ZnO胶体球悬浮液自组装为排列有序的结构。通过SEM、TEM对制得的有序结构进行了表征。结果表明,这种方法可得到直径为50~800 nm的ZnO胶体球。所得样品的透射谱在200~1 100 nm范围内出现一强烈的衰减峰(带隙中心波长为λc),且λc随ZnO胶体球粒径的减小向短波长方向移动(蓝移),λc的位置还随前处理温度的降低而蓝移。