Oxide-isolated integrated Schottky logic

Integrated Schottky logic has been fabricated in an oxide-isolated technology using 5 /spl mu/m lines and spaces. The novel device uses a merged substrate p-n-p (base width /spl sime/1.0 /spl mu/m) to clamp the collector-base junction of the oxide-walled base, down-operated n-p-n transistor. Ion-implanted low-barrier PtSi-nSi Schottky diodes are used for n-p-n collector decoupling. The average propagation delay measured on a 25-stage ring oscillator (fan-in=fan-out=1) was 2.3 ns at 65 /spl mu/A/stage and 25/spl deg/C. This 150 fJ/V power-delay product is a 3.6/spl times/ improvement compared with 540 fJ/V for junction-isolated ISL (2.7 ns at 200 /spl mu/A/stage).     

MOS-bipolar monolithic integrated circuit technology

A technique for the fabrication of p-channel MOS transistors and bipolar transistors within monolithic integrated circuits is described. Total process compatibility has been achieved without compromising either the n-p-n bipolar or p-channel MOS characteristics. The technology developed is similar to that used for conventional integrated circuits until the channel oxidation step, A low temperature oxidation followed by a high temperature anneal process that produces negligible changes in preceding diffusion profiles was used to form this oxide. Bias temperature tests of MOS capacitors have shown the oxide to be reproducibly free of contamination. A high slew rate MOS bipolar operational amplifier has been designed and fabricated on 0.045- by 0.045-in chip using the new technology. Typical characteristics are slew rate =80 V/µs voltage gain = 70 dB. The MOS transistors are used as active loads and level shifters in this circuit and provide a much improved frequency response over conventional circuits using p-n-p lateral transistors.     

A Ku-band monolithic receiver for DVB-S applications

Despite the incessant progress observed in fixed and wireless terrestrial communication networks, satellite systems remain an appealing solution for broadcasting, point-to-point, and multicasting telecommunications, because of undemanding customer equipment and wide coverage capability. In this scenario, digital video broadcasting via satellite (DVB-S) is recognized as one of the main market-attractive telecommunication fields. Up to now, expensive discrete GaAs HEMT or FET devices have been used to build up circuitry for satellite applications at Ku-band. This article presents the first 12-GHz monolithic receiver for DVB-S applications, implemented in a low-cost silicon bipolar technology. The receiver is based on a superheterodyne architecture, employing a fully integrated LO. To comply with the severe LO phase noise requirement of -101 dBc/Hz at a 100 kHz offset from the carrier, an innovative VCO topology was used implementing a three-metal-layer integrated transformer. The performance parameters of the integrated receiver fulfill DVB-S standard specifications.     

Multilevel monolithic inductors in silicon technology

Multilevel monolithic inductors implemented in standard BiCMOS technology are presented. Use of top metal layers shunted with vias provides Q values approaching 10 at 2.4 GHz and above 6 at 900 MHz for a 2 nH inductor. There is no modification to the conventional wiring metallurgy and no need for extra processing steps     

A monolithic quad line driver for industrial applications

The device described in this paper is a new quad line driver to be used in the hostile and noisy industrial environment and developed in mixed technology (BCD: Bipolar, CMOS, DMOS). It consists of four independent line drivers, each of which has a rail-to-rail push-pull output stage realized with power DMOS transistors connected in half bridge configuration. Even though the device is designed to be used primarily in the output cards of programmable controllers, it is a general purpose device, since it can drive any kind of load (resistive, capacitive, or inductive) with an output current of 100 mA. The novel structure of the top driver allows full protection of the output stage against any kind of short circuits and/or overloads, providing a linear current limitation. Furthermore, when a channel is tristated, for every applied voltage ranging from ground to the supply voltage, virtually zero current is absorbed from the output. An innovative high efficiency central charge pump circuit has also been designed and implemented, making both a very wide supply voltage operation (6-50 V) and high switching frequency (up to 500 KHz) possible, The device can also be used as a receiver since the input voltage can swing from -10-50 V     

A CMOS monolithic amplifier for cardiac EIT applications

Analog Integrated Circuits and Signal Processing - This paper presents a low-noise amplifier (LNA) with superior linearity for ultra-wideband (UWB) purposes. Linearity is a significant parameter...     

A versatile monolithic IC building-block for light-sensing applications

An all-bipolar building-block consisting of a linear light-to-current converter, a voltage comparator, and a voltage reference has been developed. This new general purpose IC combines the advantages of silicon photodiode light sensors with the linear signal processing capability of bipolar integrated transistors. In achieving this marriage, new circuit techniques were developed in order to operate at the very low current levels (<1 nA) and over the wide dynamic range of the light input. Besides their normal sensory function, photodiodes were made to serve as active elements in the circuit, taking part in biasing and acting as active loads in circuits that operate entirely on photocurrents. Use of these techniques boosted overall performance and eliminated the need for a light shield over the active-device portion of the die.     

A wide-band GaAs monolithic spiral quadrature hybrid and itscircuit applications

The design, performance, and circuit applications of a 2-6-GHz GaAs monolithic spiral quadrature coupler are presented. This 90° coupler uses lumped spiral inductors and metal-insulator-metal (MIM) capacitors and is very small in size (14 mil×26 mil). The measured relative phase difference between the coupled and direct port over the 3:1 bandwidth was 93°±6°. Applications of this broadband hybrid in reflection phase-shifter, image-reject downconverter, and I-Q downconverter circuits have also been successfully demonstrated based on this structure     

MICROX-an all-silicon technology for monolithic microwaveintegrated circuits

An improved silicon-on-insulator (SOI) approach offers devices and circuits operating to 10 GHz by providing formerly unattainable capabilities in bulk silicon: reduced junction-to-substrate capacitances in FETs and bipolar transistors, inherent electrical isolation between devices, and low-loss microstrip lines. The concept, called MICROX (patent pending), is based on the SIMOX process, but uses very-high-resistivity (typically>10000 Ω-cm) silicon substrates, MICROX NMOS transistors of effective gate length 0.25 μm give a maximum frequency of operation, f_max, of 32 GHz and f_T of 23.6 GHz in large-periphery (4 μm×50 μm) devices with no correction for the parasitic effects of the pads. The measured minimum noise figure is 1.5 dB at 2 GHz with associated gain of 17.5 dB, an improvement over previously reported values for silicon FETs     

TDM over Ethernet技术及应用

长期以来，电信业务和数据业务在两种不同网络上实现传输。近年，随着用户需求的多样化、网络管理的复杂化以及市场竞争所带来的巨大成本压力，在同一传输平台上融合实时业务和数据业务已成为大势所趋。而IP网络凭借其技术成本优势，将成为未来网络主体架构的首选。目前，在SDH、PDH等传统的时分复用系统（TDM）上提供数据通道，例如传输以太网信号等，已经有了许多成熟的技术。但在以太网上传送实时业务方面，较多的努力都集中在终端方面，产生了各种将语音、图像等信息直接装入以太网（或IP）数据包中的特殊终端设备，例如VoIP技术…     

60 GHz monolithic GaAs front-end circuit for receiver applications

A millimetre-wave planar mixer diode compatible with GaAs MESFET based integrated circuit fabrication has been developed. Selective ion implantation was used to optimise the diode and FET doping profiles. A novel feature reported here is the use of a deep implanted buried n+ layer to minimise diode series resistance, yielding diode cutoff frequencies in excess of 500 GHz. Monolithic balanced mixer diodes integrated with an MESFET IF amplifier fabricated by this technique have given 5dB conversion loss at 60 GHz.     

Low-loss monolithic transmission lines for submillimeter andterahertz frequency applications

The design and construction of low-loss monolithic transmission lines are critical to systems which require that terahertz-power be guided to the antenna front ends. Two types of novel monolithic guiding structures, designed for the 0.3-2.0 THz and 0.1-0.3 THz ranges, respectively, are proposed. The novel waveguides are constructed from dielectric materials and structures which are available in monolithic technology so that the integration of active devices is possible. Propagation in each of the waveguides is characterized over relevant frequency ranges by applying a mode-matching technique, which takes into account all forms of electromagnetic coupling as well as losses in the dielectrics. The structures are predicted to exhibit excellent power confinement and low losses     

A wide-band monolithic quasi-optical power meter for millimeter and submillimeter-wave applications

A novel monolithic power meter has been developed for submillimeter-wave applications (100 GHz to 10 THz). The detector is a large-area bismuth bolometer integrated on a 1.2-μm-thick dielectric membrane. This approach results in a wide-band, high-responsivity detector. The power meter is simple to fabricate, is inexpensive, and can be easily calibrated using a low-frequency network. Quasi-optical measurements at 90, 140, and 240 GHz show that the bolometer is polarization-independent and could be modeled by a simple transmission line model. Absolute power measurements at 90, 140, and 240 GHz show a ±5% accuracy and agree well with a calibration Anritsu power meter at 90 GHz. Potential application areas are power calibration, antenna coupling efficiency measurements, and absolute power measurements from solid-state devices and far-infrared lasers at submillimeter wavelengths. Absolute output power measurements on a 220-280 GHz tripler using the quasi-optical power meter are presented as an application example     

A monolithic isolation amplifier in silicon-on-insulator CMOS: Testing and applications

In this paper, the design and test results of a 4-channel digital isolation amplifier are presented, along with results of a prototype power converter circuit using the amplifier for voltage feedback regulation. The amplifier uses a capacitive coupling technique to transfer digital signals from input to output while preserving galvanic isolation between the two. The isolation amplifier was fabricated in a 0.5 μm Silicon-on-Sapphire (SOS) technology and uses the isolation properties of the SOS substrate to achieve more than 800 V isolation between input and output grounds. Each of the four channels can operate in excess of 100 Mbps using a differential transmission scheme to reject ground bounce transients up to 1 V/μs. The input circuit can be powered from an on-chip charge-pump to permit single supply operation. The device can be used in a wide variety of applications that require passing signals across an isolation barrier: power supplies, remote sensing, and medical and industrial applications.     

Micropower monolithic filters using bipolar/JFET technology

Two approaches for the implementation of micropower monolithic filters operating from a 1.3-V supply were investigated. The filters were fabricated using a bipolar/JFET compatible technology. The characteristics and limitations of each of the filtering approaches are discussed and a comparison between the two, based on the performance of second-order bandpass filter realizations, is presented.     

Micropower monolithic filters using bipolar/JFET technology

Two approaches for the implementation of micropower monolithic filters operating from a 1.3-V supply were investigated. The filters were fabricated using a bipolar/JFET compatible technology. The characteristics and limitations of each of the filtering approaches are discussed and a comparison between the two, based on the performance of second-order bandpass filter realizations, is presented.     

Flexible circuit and sensor arrays fabricated by monolithic silicon technology

A novel monolithic batch fabrication method produces arrays of silicon islands containing conventional integrated-circuit components and supported by a flexible polyimide substrate. Islands are interconnected by photolithographically defined gold leads embedded in the polyimide. Because no bonding pads are necessary at island boundaries, lead density between islands is at least twice that available using hybrid techniques. The technology has been used to fabricate thermohaeter arrays for temperature profile measurement during hypertherminal treatment of cancer. An array consists of 20 silicon islands; each island contains one p-n diode, which is used as a thermometer. These linear arrays are 1 mm wide by 0.4 mm thick, with 20-µm-wide by 1-µm-thick gold interconnects on 40-µm centers. The flexible array technology is currently being modified to fabricate two-dimensional arrays of micromechanical sensors for robotic and biomedical uses.     

A monolithic mosaic of photon sensors for solid-state imaging applications

Monolithic silicon mosaics of photosensor elements have been developed for solid-state imaging applications. The physical structure, design considerations, and performance characteristics of these electrooptical devices as applied to image converter applications are discussed. The sensing monolith consists of a square 50 by 50 mosaic of phototransistor elements on 0.010 inch centers which are interconnected both by internally diffused strips and by vapor deposited surface bars. FiftyXand fiftyYexternal leads provide access to any individual elementX_{b}Y_{a}of the mosaic. Fabrication of this 2500 element mosaic involves the techniques of planar passivation, epitaxial growth, solid-state diffusion, and thin-film vacuum evaporation. A discussion of sensor operation includes mechanisms of phototransistor action, electrooptical conversion efficiency, and element-to-element crosstalk minimization. An evaluation of the electrooptical transfer characteristics of the mosaic sensor elements are presented. Uniformity of element response is typically better than 85% for response within a 3 : 1 range and 75% for response within a 2 : 1 range. Several shades of gray can be imaged simultaneously. The mosaic dynamic range extends over 3.5 orders of incident illumination energy or five orders of output photocurrent. The minimum and maximum detectable signals are approximately 10.0 nW and 1.0 roW, respectively. Sensitivity is of the order of 10²to 10³µA/mW in the linear portion of the transfer curve.     

High-power monolithic AlGaN/GaN HEMT switch for X-band applications

The design, fabrication and test of X-band high-power monolithic SPDT switches in microstrip GaN technology are presented. Such switches have demonstrated state-of-the-art performance: they exhibit 1 dB on-state insertion loss and better than 37 dB isolation. Power- handling measurements have shown that no compression phenomenon occurs with an input power equal to 39.5 dBm at 10 GHz.