空间交叉CARS测量NO气体的温度

测量了不同温度下NO气体的空间交叉相位匹配CARS光谱,并将其与理论计算谱进行拟合,从而实现了用CARS方法测量系统中点的温度。     

高压氢的CARS信号线宽测量

本文用Fabry-Perot干涉仪测量了高压H_2CARS光的谱线宽度。获得了清晰的H_2 CARS光谱的干涉图。     

精确测量谱线位移的CARS装置及气-液相变中的谱线位移

建立了一套精确测量谱线位移的CARS装置,用它测量了氮气和液氮、气态和液态硝基苯CARS的谱线位移和形状变化。     

用单次脉冲非稳腔空间增强探测CARS技术测量火焰温度

采用宽带相干反斯托克斯拉曼散射(CARS)技术测量了甲烷-空气预混火焰温度场分布,并分析了温度测量的不确定度.建立的宽带CARS实验系统采用非稳腔空间增强探测(USED)相位匹配构造,其横向空间分辨率约0.1 mm,纵向空间分辨率约3 mm,该系统能实现10 Hz重复频率测量火焰瞬时温度.采用宽带非稳腔空间增强探测CARS在甲烷-空气预混火焰中获得了单次激光脉冲的高信噪比氮气Q支CARS实验谱,用CARS理论计算软件拟合理论谱和实验谱确定了预混火焰的温度随高度的分布,采用单次激光脉冲的氮气Q支CARS实验谱测量火焰温度的不确定度小于5%.     

基于单脉冲BOXCARS法火焰温度测量装置的研制

研制了基于单脉冲CARS方法的温度测量装置,使用宽带染料激光器产生线宽200cm-1的斯托克斯光,一次脉冲就可以得到完整的CARS光谱,实现了温度的瞬时测量.     

共振相干反斯托克斯喇曼光谱

本文介绍了共振相干反斯托克斯喇曼光谱(共振 CARS)的原理及实验装置,研究了样品池厚度,溶液浓度、激发波长等因素对共振 CARS 的影响,测量了β-胡罗卜素在1525cm~(-1)与1152cm~(-1)处的 CARS 谱,在浓度为2.5×10~(-6)M 时仍能观察到 CARS 信号。还分析了双光子共振吸收对测量的干扰及其避免方法。     

同时测量氢和氧CARS谱的新方法

提出一种仅需一台染料激光器即可同时测量火焰中氢和氧的CARS谱的新方法.取带宽为120cm~(-1).中心波长位于580.4nm的Stokes光束与532nm的泵浦光束相配合.同时测量氢扩散火焰中的氢和氧的CARS谱.用氢的S(6)和S(5)的积分强度比确定火焰中的温度并与氮的Q支CARS谱测量的温度和经过热损耗修正的热电偶测得的温度取得了相当好的一致结果.一次测出氢和氧的CARS谱.避免多次测量中参数的难以重复性.提高了以温度为参数来确定浓度的准确性.     

宽带CARS技术用于气体温度的测量

本文报道了用宽带CARS技术测量高温空气的温度及其实时的升降过程。结果明显地优于有滞后效应的常规热电偶测试方法。     

CARS在超音速燃烧研究中的应用

报道了氮、氧和水的Q支CARS谱以及氢的S(5)和S(6)纯转动CARS的测量结果,并用来确定超音速燃烧火焰中的温度及氢和氧的浓度;用水的Q支CARS谱得到共振与非共振谱积分面积比随浓度的变化曲线。提出并发展的同时测量氢和氧的CARS谱新方法,为同时测量火焰温度和氢、氧浓度提供了一条途径,特别对不含氮的燃烧系统更具重要意义。     

氮气CARS理论光谱计算及在温度测量中的应用

基于量子理论,对相干反斯托克斯拉曼散射(CARS)的机理进行了探讨,给出了氮气分子Q支CARS光谱的理论计算模型。进行了氮气分子拉曼散射截面、不同能级分子布居数密度差、振转配分函数及三阶非线性极化率的计算。仿真结果表明适当的简化能够大大缩短光谱计算的时间,并且与已有的结果比较接近,能够应用于CARS测量应用。介绍了能够用于瞬态温度场测量的单脉冲CARS装置,理论光谱分辨率可达0.1cm-1,轴向空间分辨率5mm,光谱采样频率10Hz。     

Investigation of Ta2O5/SiO2/4H-SiC MIS capacitors

Tantalum pentoxide (Ta₂O₅) deposited by pulsed DC magnetron sputtering technique as the gate dielectric for 4H-SiC based metal-insulator-semiconductor (MIS) structure has been investigated. A rectifying current-voltage characteristic was observed, with the injection of current occurred when a positive DC bias was applied to the gate electrode with respect to the n type 4H-SiC substrate. This undesirable behavior is attributed to the relatively small band gap of Ta₂O₅ of around 4.3 eV, resulting in a small band offset between the 4H-SiC and Ta₂O₅. To overcome this problem, a thin thermal silicon oxide layer was introduced between Ta₂O₅ and 4H-SiC. This has substantially reduced the leakage current through the MIS structure. Further improvement was obtained by annealing the Ta₂O₅ at 900 °C in oxygen. The annealing has also reduced the effective charge in the dielectric film, as deduced from high frequency C-V measurements of the Ta₂O₅/SiO₂/4H-SiC capacitors.     

Effect of annealing on the structure of Bi2Te3-Bi2Se3 films

The crystallization dynamics of Bi₂Te₃-Bi₂Se₃ polycrystalline films annealed at 200–230°C has been investigated. The formation of ordered blocks 70—150 nm in size, depending on the annealing time and temperature, is observed.     

Fluorescence enhancement of single-phase red-blue emitting Ba3MgSi2O8:Eu2+,Mn2+ phosphors via Dy3+ addition for plant cultivation

Fluorescence enhancement of red and blue concurrently emitting Ba₃MgSi₂O₈:Eu²⁺,Mn²⁺ phosphors for plant cultivation has been investigated by Dy³⁺ addition. The Ba₃MgSi₂O₈:Eu²⁺,Mn²⁺,Dy³⁺(BMS-EMD) phosphors have two-color emissions at the wavelength peak values of 437 nm and 620 nm at the excitation of 350 nm. The two emission bands are coincident with the absorption spectrum for photosynthesis of plants. An obvious enhancement effect has been observed upon addition of Dy³⁺ with amount of 0.03 mol%, in which the intensities of both blue and red bands reach a maximum. The origin of red and blue emission bands is analysed. The photochromic parameters of the samples at the nearly UV excitation are tested. This fluoresence enhancement is of great significance for special solid state lighting equipment used in plant cultivation. This work has been supported by National Natural Science Foundation of China (Grant No 50872091) and the Natural Science Foundation of Tianjin, China (06YFJMJC02300, 06TXTJJC14602).     

Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

The effect of La₂O₃ incorporation on the spatial trap distribution in HfO₂ gate dielectrics is investigated. The incorporation of La₂O₃ in HfO₂ dielectric has been found to improve the effective mobility in addition to reduced interface-state density. The trap distribution analysis in the HfO₂ layer extracted by combining the charge pumping (CP) method and the low-frequency noise (LFN) method has revealed significant reduction in the amount of traps at HfO₂/SiO₂-interlayer interface and in the HfO₂ layer by La₂O₃ incorporation.     

Electrical properties of SiO2/TiO2 high-k gate dielectric stack

The trapping/detrapping behavior of charge carriers in ultrathin SiO₂/TiO₂ stacked gate dielectric during constant current (CCS) and voltage stressing (CVS) has been investigated. Titanium tetrakis iso-propoxides (TTIP) was used as the organometallic source for the deposition of ultra-thin TiO₂ films at low temperature (<200 °C) on strained-Si/relaxed-Si_0.8Ge_0.2 heterolayers by plasma-enhanced chemical vapor deposition (PECVD) in a microwave (700 W, 2.45 GHz) plasma cavity discharge system at a pressure of 66.67 Pa. Stress-induced leakage current (SILC) through SiO₂/TiO₂ stacked gate dielectric is modeled by taking into account the inelastic trap-assisted tunneling (ITAT) mechanism via traps located below the conduction band of TiO₂ layer. The increase in the gate current density observed during CVS from room temperature up to 125 ^oC has been analyzed and modeled considering both the buildup of charges in the layer as well as the SILC contribution. Trap generation rate and trap cross-section are extracted. A capture cross-section in the range of 10⁻¹⁹ cm² as compared to 10⁻¹⁶ cm² in SiO₂ has been observed. A temperature-dependent trap generation rate and defects have also been investigated using time-dependent current density variation during CVS. The time dependence of defect density variation is calculated within the dispersive transport model, assuming that these defects are produced during random hopping transport of positively charge species in the insulating high-k stacked layers. SILC generation kinetics, i.e. defect generation probability under different injected fluences for various high-constant stress voltages in both polarities have been studied. An empirical relation between trap generation probability and applied stress voltage for various injected fluences has been developed.     

Distribution and generation of traps in SiO2/Al2O3 gate stacks

In this work we combine charge-pumping measurements with positive constant voltage stress to investigate trap generation in SiO₂/Al₂O₃ n-MOSFET. Trap density has been scanned either in energy or in position based on charge-pumping (CP) measurements performed under different operating conditions in terms of amplitude and frequency of the gate pulse. Our results have revealed that the traps are meanly localized shallow in energy level, deeper in spatial position and they are mostly generated near the Si/SiO₂ interface.     

氟化锂晶体F2心光致电离及F2和F2+心激光特性研究

室温下利用337nm脉冲激光照射着色LiF晶体,有效地将F2心转变成F2+心,其浓度高于1016cm-3。利用消象散三镜折叠腔,研究了LiF晶体F2和F2+心激光特性。实际工作表明,利用氮分子激光作为处理光束,可获得较长时间稳定的F2+心激光输出。     

Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique

In this paper, we present our results on the distribution and generation of traps in a SiO₂/Al₂O₃ transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress.By increasing the amplitude of the gate pulse we observe an increase of the charge recombined per cycle closely related to the contribution of shallow traps near the SiO₂/Al₂O₃ interface. By reducing the pulse frequency we measure an increase in the charge pumping current due to traps located deeper in the Al₂O₃. By combining charge pumping and constant voltage stress measurements, we found that the traps are mostly generated near the Si/SiO₂ interface.     

Characterization of the annealing impact on La2O3/HfO2 and HfO2/La2O3 stacks for MOS applications

The impact of various rapid thermal annealing used during the integration on the La₂O₃/HfO₂ and HfO₂/La₂O₃ stacks deposited by Atomic Layer deposition was analyzed. The consequences of lanthanum localization in such stacks on the evolution of the films during the rapid thermal annealing are investigated in term of morphology, crystalline structure, silicate formation and film homogeneity as a function of the depth. It appeared that the La₂O₃ location has an impact on the temperature of the quadratic phase formation which could be linked to the formation of SiOHfLa silicate and the resistance of the films to dissolution in HF 0.05 wt%.     

YBa2Cu3-xZnxO7薄膜红外探测器的研究

在对红外探测器进行理论分析的基础上,设计并研制了液氮温度下的Yba2Cu3-xZnxO7薄膜红外探测器,系统地测试了器件的特征参数.最好的结果为:对于波长为10μm,调制频率为f=500Hz,带宽为Δf=1Hz的红外输入辐射Rv(500,10,1)=3587V/W,NEP(500,10,1)=6.5×10-12W/Hz1/2,D*(500,10,1)=7.2×1012cmHz1/2/W,τ(500,10,1)=1.2ms.