基于0.18 μm CMOS加固工艺的抗辐射单元库开发

抗辐射单元库是快速完成抗辐射数字电路设计的基础.基于0.18μmCMOS加固工艺总剂量及单粒子效应加固策略,从单元库规格制定、逻辑与版图设计、单元库特征参数提取及布局布线文件抽取、单元库设计套件质量保证到最终硅验证,完成了抗辐射单元库的全流程开发.抗辐射单元库在速度、面积、功耗及抗辐射性能4个方面表现出良好的均衡性,具...     

抗辐射数字电路加固技术研究

文章对电路抗辐射的机理进行了研究,提出了几种提高数字电路抗辐射能力的方法:通过工艺控制减小辐射后的背栅阈值电压漂移,通过版图增加体接触、采用环型栅等结构提高单元的抗辐射能力,通过对电路关键节点的加固提高整体电路的抗辐射能力。为了验证加固方法的可靠性,设计了一款电路进行抗总剂量、抗瞬态剂量率、抗中子辐射、抗单粒子辐射等多种试验。通过辐照试验结果可以看到,采用抗辐照方法设计的电路具有较强的抗辐照能力,为今后抗辐照电路的研制和开发奠定了坚实的基础。     

0.13μm抗辐射SOI CMOS标准单元库建库流程研究与实现

基于0.13μm部分耗尽绝缘体上硅(SOI)互补金属氧化物半导体(CMOS)工艺线,开发了全套0.13μm抗辐射SOI CMOS工艺的标准单元库。针对深亚微米SOI器件的辐射效应,在电路设计和版图设计上进行了加固,达到了比较好的抗辐射效果。对SOI标准单元库的建库流程的各方面做了比较深入的介绍,通过Hspice仿真验证单元库中加固D触发器(DFF)抗单粒子效应的能力并对不同加固方式的性能开销进行了对比。利用已建立的0.13μm抗辐射SOI CMOS标准单元库设计了测试芯片以验证库的可靠性。     

总剂量辐照效应模型在TDI-CCD器件中的应用

介绍了抗辐射加固设计使用的总剂量辐照效应模型,研究了它在时间延迟积分电荷耦合器件(TDI-CCD)电荷转移效率参数衰减中的应用,并通过不同剂量60Coγ辐照试验,验证了该模型在TDI-CCD器件抗辐射加固设计中的应用价值。     

设计和表征一个65nm抗辐射标准单元库

提出了一个基于商用65nm工艺在晶体管级设计抗辐射数字标准单元库的方法。因为当C单元的两个输入是不同的逻辑值时输出会进入高阻模式,并保持输出逻辑电平不变,而当输入端有相同的逻辑值时,C单元的功能就像一个反相器的特性。因此它有把因为辐射粒子引起的单粒子翻转（SEU）效应或单粒子传输（SET）效应所产生的毛刺滤除掉的能力。在这个标准单元库中包含了在晶体管级使用C单元设计了抗辐射的触发器,以便于芯片设计者可以使用这个库来设计具有更高抗辐射能力和减小面积、功耗和延迟的芯片。在最后为了能表征标准单元在硅片上的延迟特性,一个基于环形振荡器的芯片结构用来测量每个单元的延迟,以及验证抗辐射能力。延迟测量结果跟版图后仿真结果偏差在10％以内。     

GaAs 10 bit DAC的抗辐射设计和实验

通过分析砷化镓(GaAs)器件的电离辐射剂量率辐照机理和效应,结合电路结构,描述了砷化镓10 bit数模转换器(DAC)的电离辐射剂量率辐射效应、抗辐射设计和辐照实验。在电路设计上,10 bit DAC由两个5 bit DAC组成,通过芯片内部合成10 bit DAC,有效降低了芯片面积和制造工艺难度;通过分析电路的电离辐射剂量率辐射效应,针对敏感电路进行局部电路的抗辐射设计,提高电路抗辐射能力;结合实验条件和器件引线分布,设计合理的辐照实验方案,开发辐照实验电路板,进行辐照实验,获得科学的实验结果,验证电路的抗辐射能力。实验结果表明该数模转换器能够抗3×1011rad(Si)/s剂量率的瞬时辐照。     

砷化镓8Bit ADC电路的抗辐射设计和辐照试验研究

砷化镓模数转换器(ADC)具有良好的电性能和耐辐照能力,广泛应用于各种领域,尤其是航空航天领域.电路的抗辐射能力与设计和工艺密切相关,在前期对电路进行辐照试验基础上,针对电路设计和工艺制造进行大规模集成电路的抗辐射研究,改进电路的设计和工艺制造技术,提高电路的抗辐射能力.本文主要对该电路的设计、工艺研究和γ总剂量辐照试...     

基于130nm PD-SOI工艺存储单元电路的抗辐射加固设计

基于130 nm部分耗尽绝缘体上硅(SOI) CMOS工艺,设计并开发了一款标准单元库.研究了单粒子效应并对标准单元库中存储单元电路进行了抗单粒子辐射的加固设计.提出了一种基于三模冗余(TMR)的改进的抗辐射加固技术,可以同时验证非加固与加固单元的翻转情况并定位翻转单元位置.对双互锁存储单元(DICE)加固、非加固存储单元电路进行了性能及抗辐射能力的测试对比.测试结果显示,应用DICE加固的存储单元电路在99.8 MeV ·cm2 ·mg_1的线性能量转移(LET)阈值下未发生翻转,非加固存储单元电路在37.6 MeV·cm2·mg_1和99.8 MeV·cm2·mg_1两个LET阈值下测试均发生了翻转,试验中两个版本的基本单元均未发生闩锁.结果证明,基于SOI CMOS工艺的抗辐射加固设计(RHBD)可以显著提升存储单元电路的抗单粒子翻转能力.     

日盲紫外焦平面探测器的抗辐射加固设计

设计了一款320×256元抗辐射日盲紫外焦平面阵列探测器,重点针对探测器的读出电路版图、积分开关偏置点、探测器芯片外延结构及器件工艺开展了抗辐射加固设计。对加固样品开展了γ总剂量和中子辐照试验和测试,试验结果表明样品的抗电离辐照总剂量达到150krad(Si),抗中子辐照注量达到1×10¹³n/cm²(等效1MeV中子),验证了抗辐射加固措施的有效性。     

一种标准单元库的自动仿真验证方法

提出了一种针对标准单元库中单元逻辑功能进行自动仿真验证的方法,验证了55 nm标准单元库中单元逻辑功能的正确性。该方法能自动提取设计文档中的单元逻辑,根据提取结果中输入端的数量自动生成测试向量,并以此测试向量生成参考逻辑值,整个过程只需0.708 μs。采用仿真工具对标准单元库文件进行仿真,将得到的仿真值自动与参考值对比,验证了库单元逻辑的正确性,提高了标准单元库功能验证的效率。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks