电能计量资产自动化仓储系统及应用

为了有效提高电能计量资产仓储综合效率,设计了基于电能计量相关因素的资产自动化仓储系统。规划设计堆垛机架构以及运行模式,并优化设置堆垛机运行参数;通过适应电能计量,结合堆垛机提出了新型仓储配置优化算法,合理优化了当前仓储资产配置结构,添加了优先分配策略,实现自动化仓储。实验数据表明,设计的电能计量资产自动化仓储系统平均作业频率和综合配置效率均提高了20%以上,证明了该仓储系统的优势。     

基于深度神经网络的电能计量异常筛选方法

文章设计了一种基于深度神经网络的电能计量异常筛选方法,其通过拉格朗日插值方法对电能计量数据实施丢帧处理,分别筛选出电量异常的特征数据、用电异常的特征数据以及接线异常的特征数据,将遗传算法与深度神经网络中的BP神经网络相结合,构建电能计量异常筛选模型,实现电能计量异常筛选。测试结果表明,该方法筛选中的分类精度较高,最高可达98.52%;在实验数据中加入畸变数据后,该方法的电能计量异常筛选误差仍较低。     

基于计量自动化系统的电能量数据应用提升分析

近年来,计量自动化系统正在飞速发展与广泛应用,计量自动化系统实际应用中体现出高度的自动化功能,能够实现对数据、信息等的自动化采集、分析与处理,从而提高系统的运行效率,提升电能数据的应用水平。本文重点分析了计量自动化系统的结构与功能,以及电能量数据应用提升对策。     

电能计量器具质量监督自动预警系统的建立

本文在大量调研智能电能表业务数据的基础上,基于大数据技术,设计了一套电能计量器具质量监督自动预警系统.系统可根据电能计量器具采集的相关数据生成辅助决策,并以多种方式实时展现决策结果与预警信息,实现对电能计量器具质量监督和管控.本文重点对该系统架构、硬件部署、建设重点进行了研究,对电能计量器具质量提升有着一定意义.     

基于电力线通信的远程电能计量监控系统设计

为了解决目前电业管理中存在的电能非法使用问题,提出了一种基于电力线通信网络的远程电能计量监控方法。该系统具有电能的自动计量、远程数据传送、防止非法用电等功能。给出了防止非法用电的系统结构框图,设计了基于ST7538的电力线通信模块和基于ATT7022A的电能计量监控模块,给出了其硬件结构图及软件程序流程图。最后,对该系统进行了电能计量精度测试和电力线通信可靠性测试,给出了测试数据。经过初步试验证明本设计模块是有效的。     

基于电力宽带载波通信的电能计量动态误差检测研究

目前的检测方法在对电能计量误差进行检测时,会出现检测精度不高,检测结果与实际误差值差别很大的问题。引入电力宽带载波通信,开展对电能计量动态误差检测方法的设计研究。基于电力宽带载波通信的优势,设计检测数据传输线;对通过传输线得到的检测数据清洗和归一化处理;设定电能计量异常阈值与误差判定规则;通过分布式结构构建,实现电能计量误差动态检测。     

ADE7758在新型电能监控系统中的应用与研究

为了满足当今企业电能监控系统的需求,达到低成本、高精度、简化设计的目的,提出了一种使用三相电能计量集成电路ADE7758分时实现单相、三相电能监控功能的解决方案。通过实际开发、测试,确定芯片在该方案中的硬件电路设计、驱动开发、企业用户应用程序实现和实际使用过程中的校准方法,提供了实际电能监控过程中的数据。根据此对计量方案的继续优化进行了探讨。     

关于电能计量自动化系统在电力营销中的应用研究

随着电力工程技术日益发展成熟,电能计量自动化系统逐渐被引入到现代电力市场的营销环节中,推进了现代化电力市场的变化和反战。从实际应用效果来看,计量自动化装置大幅降低了技术人员的工作强度,节约了电力企业的基础建设费用,同时还大幅提升了电能数据控制的精准性和便利性。为了提高大众对该系统的了解,扩大新型计量系统的普及率,本文笔者着重对现代电力市场使用电能计量自动化系统的实际情况进行研究。     

研究用电检查工作中电能计量自动化系统应用

随着科技的不断进步,电能计量自动化系统在用电检查方面也持续健全,电能计量自动化系统通常包含4个部分,分别是通讯网络、计算机程序、计量表、用户端,它不但监控着用户的用电情况,还能对数据进行详细的分析.本文主要概述了电能计量自动化系统,介绍了电能计量自动化系统的性能,另外详细剖析了电能计量自动化系统在用电检查工作中的应用.     

计量自动化系统在计量运维工作中的作用

电力市场的不断发展和电力用户的不断增加,对电能计量系统的自动化水平提出了更高的要求。传统的电能计量模式不仅工作强度大,而且无法确保电能计量信息的可靠性和准确性。因此,通过运用电能计量自动化系统,不仅提高了电能计量运维工作的效率,同时也降低了运维工作人员的劳动强度。文章主要对电能计量系统在电能计量运维工作的应用展开分析,以为电能计量自动化系统的发展提供借鉴。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.