厚膜DC/DC电源VDMOS器件失效机理及研究现状

整机小型化的发展对厚膜微组装DC/DC电源提出了更高的可靠性要求,VDMOS器件作为DC/DC电源的开关器件,其性能退化失效将直接影响电源效率、温升指标和技术性能。介绍了厚膜微组装DC/DC电源VDMOS器件芯片级、封装级两个层面的失效机理,以及针对这些失效机理的寿命评估方法和研究现状,并根据VDMOS器件在DC/DC电源中的应用,提出两种温度应力下的寿命评估方法。     

基于阈值电压漂移的VDMOS寿命评价

随着DC/DC电源的快速发展,作为其中的开关管,VDMOS器件的可靠性一直受到关注.基于VDMOS阈值电压漂移的失效机理研究,对DC/DC电源上的VDMOS器件进行寿命评价;在135 ℃、150 ℃和165 ℃三种温度下进行加速老化试验,以阈值漂移量20 mV为失效判据,利用Arrhenius模型对试验结果进行分析,得到其失效激活能为1.18 eV,推算出其工作状态下的中位寿命特征值为4.0×105 h.分析认为,引起阈值电压漂移的原因主要是界面态电荷的积累.     

基于Arrhenius模型快速评价功率VDMOS可靠性

基于Arrhenius模型,对功率器件垂直导电双扩散(VDMOS)场效应晶体管的可靠性进行了评价,并对其主要失效机理进行了分析.通过样管在不同结温下的恒定温度应力加速寿命实验,利用Arrhenius方程和最好线性无偏差估计法(BLUE)对结果进行数据处理,得到其失效激活能E=0.54 eV,在偏置VDs=7.5 V,IDs=0.8 A,推导出功率VDMOS在室温下工作的寿命特征值为3.67×106 h.失效分析发现,栅极累积失效是影响功率VDMOS漏源电流,IDs退化的主要失效机理.     

直流和脉冲工作的VDMOS可靠性试验

基于恒定电应力温度斜坡法(CETRM),对工作于直流状态和脉冲状态下的VDMOS功率器件进行可靠性研究,考察了器件阈值电压、跨导以及导通电阻的退化情况,得出在两种工作状态下均是跨导为失效敏感参数。在直流工作状态下,VDMOS失效激活能为0.57~0.68 eV,寿命为7.97×105~1.15×107h;在脉冲工作状态下,VDMOS失效激活能为0.66~0.7 eV,寿命为4.3×105~4.6×106h。对跨导的退化机理进行了分析。     

一种DC／DC模块电源失效原因分析及解决方法

对于在可靠性"三综合"(即温度、湿度和振动)试验中出现的质量问题,由于器件的相互关联性以及多种应力的共同作用,其故障原因或失效机理分析相对复杂,有效的解决方法在短期内往往难以出台。通过一种DC/DC模块电源在整机"三综合"试验中的失效原因和机理分析,并采用试验手段,确定振动应力是器件失效的主要原因。最后通过选择了合理有效的加固措施,彻底解决了DC/DC模块电源的失效问题。     

DC/DC辐照损伤与VDMOS器件1/f噪声相关性研究

通过对DC/DC转换器低频噪声测试技术以及在γ辐照前后电性能与1/f噪声特性变化的对比分析,发现使用低频噪声表征DC/DC转换器的可靠性是对传统电参数表征方法的一种有效补充.对DC/DC转换器辐照损伤与其内部VDMOS器件1/f噪声相关性进行了研究,讨论了引起DC/DC转换器辐照失效的原因.     

VDMOS器件损伤的DC/DC转换器辐射预兆单元设计

文中应用预警和健全管理(PHM)方法,在深入研究了辐射导致VDMOS器件和DC/DC转换器性能退化之间关系的基础上,设计了基于VDMOS器件损伤的DC/DC转换器辐射预兆单元.经过仿真证实了所设计的预兆单元可以提前报警.     

基于参数退化法评价功率肖特基二极管寿命

对功率肖特基二极管(SBD)施加恒定电应力、序进温度应力进行退化实验,考察了反向漏电流,IR、理想因子n、势垒高度ΦB以及串联电阻Rs等参数的退化情况.可以看出,在退化的过程中,SBD的,IR增加较快,n逐渐减小,ΦB逐渐增大,而Rs则缓慢增加.综合考察这些退化曲线,采用退化最为明显的,IR作为失效判据.基于IR参数退化曲线,使用恒定电应力温度斜坡法(CETRM)模型,推导出该功率肖特基二极管的寿命约为4.3×107 h,测试结果与实际预测相符.     

DC/DC变换器可靠性保障与评估新技术

由于应用条件和环境影响对DC／DC变换器的可靠性有极大影响，因此在器件可靠性评估过程中需要考虑应用的环境和应力，从而预测出相应的失效模式，并在设计和制造过程中加以消除。本文在分析了DC／DC变换器失效模式和机理的基础上，论证了稳定温度可靠性检测方法的不足之处。本文重点介绍了可靠性保障与评估的新技术。新技术包括将美国海军JSF办公室提出的预兆一安全管理（PHM）理念应用于DC／DC变换器以及抗辐照的加固技术。当这些方法被用于结合环境测试和目标元器件评估时，才能生产出高质量和高可靠性的DC／DC的变换器。     

DC／DC变换器用功率IC—MD系列

MD系列是日本新电元工业公司开发的DC/DC变换器用功率IC.在电源的分散化和小型化要求日益迫切的今天,除了需要减小DC/DC变换器用功率IC的外形尺寸之外,外接部件的数量和尺寸也需要压缩.MD系列就是满足上述要求的降压削波型(Chopper Type)DC/DC变换器用功率IC.其电路构成简单,内藏控制IC和功率器件,外接部件仅电感和电容等.     

DC/DC电源模块可靠性评价方法研究

提出了一种DC/DC电源模块使用寿命可靠性评价方法。在高温环境下进行长期寿命试验,利用试验过程中出现的失效数及总的试验时间,通过一定置信度下的数学计算,得到加速寿命试验的失效时间。依据DC/DC电源模块激活能的工程值计算加速系数,得到该DC/DC电源模块的使用寿命。结果表明,该DC/DC电源模块的使用寿命数据与设计值(15~20年)较吻合。该计算方法具有相当好的合理性。     

厚膜集成电路DC/DC电源热模拟及优化设计

针对厚膜DC/DC电源的散热问题,基于实测结果,利用有限元法建立了其三维有限元模型,并模拟出实际工作条件下的温度场分布.分析了电源模块中发热元件的温升及相互的热耦合情况,研究了外壳与基板材料的选择对功率器件温度的影响.分析结果表明,选用导热系数大的外壳和基板材料都有利于降低芯片温度,基板的最佳厚度介于0.6～1.0 mm之间.     

A Multiple-Port Three-Level DC/DC Converter for HESS with Power Sharing in DC Microgrids

In order to reduce the volume, weight and cost of conventional hybrid energy storage system (HESS) while properly exploring the complementary features of different energy storage devices for DC microgrid applications, this paper proposes a multiple-port three-level DC/DC converter. It possesses multiple ports sharing one front-end three-level DC/DC converter with an inductor and supercapacitor bank. Different types of batteries and/or multiple battery banks can be interfaced through the multiple terminals. Such a converter structure facilitates the cooperation of different energy storage devices to satisfy various power demands of DC microgrids with intermittent renewable generation plants. Moreover, the proposed structure allows power sharing among different energy storage devices, which enables more efficient cooperation of different battery banks or different types of batteries. Experimental results are presented to verify the efficacy of the proposed converter structure and its control.     

Study of mechanical stress impact on the I–V characteristics of a power VDMOS device using 2D FEM simulations

Reliability is a major economic and technical challenge for power electronics dedicated to embedded applications (avionics, automotive, hybrid vehicles, etc.). As the damage in a power assembly is essentially due to thermo-mechanical stress resulting from temperature variations (ambient and junction) [1], industrial actors ask for integrated devices allowing anticipation of the failure by monitoring temperature and mechanical stress. Power devices I(V) characteristics depend on the mechanical stress. Hence, one can make use of this dependence to assess the mechanical stress values from the electrical characteristics of the device. The extracted mechanical stress values give information on the mechanical state of the power module that one could exploit to anticipate failure. To study the impact of the mechanical stress on the I(V) characteristics, we carry out mechanical simulations using a finite element method (FEM) simulator (COMSOL) for a simple 2D power assembly to calculate the mechanical stress at different temperatures as well as the mechanical stress due to an external strain. The calculated values are then fed into a FEM physical device simulator (Sentaurus TCAD) to determine the electrical characteristics of a VDMOS device at different temperatures. A dissociation of mechanical stress and thermal effects on the VDMOS I(V) characteristics would make it possible to have a graphical representation that could be used to have a quick estimate of the mechanical state of the power VDMOS through its electrical characteristics.     

Thermal-aware design and fault analysis of a DC/DC parallel resonant converter

In this paper a 3-D electrothermal (ET) analysis of a DC–DC parallel resonant converter (PRC) for constant current (CC) application is presented. A full 3-D ET simulation approach is proposed at application level to provide a support for the design stage and to analyse possible fault conditions inside the active devices. Simulations and measurements have been performed on a 100 W–2 A prototype of a PRC-CC circuit with 80 kHz nominal switching frequency.In particular, in the reported case study, the analysis has been focused on the full-bridge section of the circuit in order to prove the effect of the soft switching operation, introduced by the resonant technique, and consider the effect of possible fault conditions. To this purpose an unexpected short-circuit condition on a power MOSFET composing the H-bridge is considered, to evaluate the ET circuit behaviour and the time-to-failure of the power section. Considerations are carried out in terms of minimum requirements of protection circuits which must be fulfilled in order to avoid catastrophic system failure.A second power converter, rated for 1.5 kW, has been then designed, based on the same circuital topology, and an ET simulation has been performed in order to carry out considerations on the effect of mismatches among the input bridge devices.     

Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at V_in/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.