Fe-Ni-N薄膜的结构及磁性

用双离子束溅射法在玻璃基片上制得了Fe-Ni-N薄膜，研究了Ni含,源气氛及退火温度对Fe-Ni-N薄膜的结构，磁性及热稳定性的影响。选择合适的工艺条件，可制得在（100）面方向有100％晶粒取向度的单一γ′（Fe,Ni)4N相，Ni含量为6．7％（摩尔分数）的Fe-Ni-N薄膜具有较的软磁性能，其饱和磁化强度Ms为2．04T，矫顽力Hc为0.68kA/m。但是随着Ni含量的提高，Fe-Ni-N薄膜的热稳定下降，在主源气压比PN2／PAr较低时，有利于氮含量较低的γ′相的形成，在较高的PN2／PAr条件下，则形成氮含量较高的ε-（Fe,Ni)2-3N相和ξ－（Fe,Ni)2N相。     

双离子束溅射法制备铁氮薄膜

使用双离子束溅射法制得了铁氮薄膜,随着基片温度的变化,薄膜的成分是ε－Fe2-3N,γ′－Fe4N或是二相的混合物,薄膜的晶粒尺寸随基片温度的升高而增大。以振动样品磁强计（VSM）测定了薄膜的磁性能。另外,研究了在基片温度为160℃时,改变主源中通入N2／Ar的比例对薄膜成分的影响。     

基片温度对射频磁控溅射碲化铋薄膜微结构和表面形貌的影响

碲化铋材料是目前已知的室温下性能优异的热电材料之一。本文利用射频磁控溅射在不同基片温度下制备了碲化铋薄膜。研究发现,基片温度对薄膜的微结构和表面形貌影响显著。随着温度的提高,薄膜内晶粒尺寸都不同程度地增加。基片温度100℃以上碲化铋薄膜为Bi2Te3相为主的多晶结构,并具有良好的c轴择优取向,形成了六角层状结构。基片温度250℃时薄膜转变为BiTe相,并在表面生成Te长条状颗粒。应力分析表明碲化铋薄膜与Si(100)基片之间的残余应力受温度影响明显。     

基片表面的磁场对磁控溅射法制备Fe—N薄膜特性的影响

利用反应磁控溅射方法制备了Fe-N薄膜,发现未退火的薄膜基本处于非晶或微晶状态,退火或在沉积时对基片施加一磁场,可使晶粒变大,并出现大对应内部存在应力的γ－Fe4N的（110）界面的择优取向,特别是外加的磁场使得Fe-N薄膜具有明显改善的磁性能,作利用磁场中带电粒子受约运动的观点解释了这一现象。     

基片温度对反应射频磁控溅射法制备掺杂CeO2电解质薄膜的影响

利用Gd/Ce镶嵌复合靶、采用反应射频磁控溅射技术制备了Gd2O3掺杂CeO2(GDC)氧离子导体电解质薄膜,重点探讨了基片温度对薄膜物相结构、沉积速率及生长形貌的影响.分析结果表明,不同温度下制备的薄膜中,立方面心结构GDC固溶体相占主导,同时存在少量体心立方结构Gd2O3中间相;GDC薄膜的生长取向随基片温度而变化,200℃时,无择优取向,500℃时薄膜呈现(220)织构,700℃则为(111)择优取向;薄膜沉积速率随基片温度呈阶段性规律变化,(220)方向择优生长越显著,沉积速率越高,薄膜粗糙度越大;AFM分析表明,薄膜为岛状生长,随温度升高,表面生长岛尺寸增大,岛密度变小.     

脉冲激光沉积NiZn铁氧体薄膜的微观结构和磁性

采用脉冲激光沉积（PLD）技术，分别在单晶硅基片和玻璃基片上沉积了NiZn铁氧体多晶薄膜，薄膜为单相尖晶石结构，在两种基片上都呈现出一定的（400）晶面的择优取向，但在硅基片上择优生长更显著；随着基片温度t的升高，薄膜晶粒尺寸逐渐增大；在t=500℃附近饱和磁化强度Ms出现最小值，而矫顽力Hc出现最大值；对薄膜进行退火处理。可使细小晶粒长大和内应力减小，对改善较低温度条件下制备的薄膜的软磁特性具有明显作用。     

直流磁控溅射(Ti、Al)N硬化膜的研制

本文介绍单靶直流磁控溅射三元复合(Ti,Al)N硬化膜的研制结果。制得的Ti_(0.5)Al_(0.5)N腹具有(111)面择优取向Bl NaCl立方结构,显微硬度达到2700kg/mm~2,并具有良好的抗氧化性和抗酸腐蚀性。文中着重讨论了沉膜过强中氮分压、基片负偏压以及基片温度对薄膜显微硬度、形貌、晶粒尺寸和晶格常数的影响。     

基片表面的磁场对磁控溅射法制备Fe-N薄膜特性的影响

利用反应磁控溅射方法制备了Fe-N薄膜.发现未退火的薄膜基本处于非晶或微晶状态,退火或在沉积时对基片施加一磁场,可使晶粒变大,并出现对应内部存在应力的γ′-Fe4N的(110)晶面的择优取向.特别是外加的磁场使得Fe-N薄膜具有明显改善的磁性能.作者利用磁场中带电粒子受约运动的观点解释了这一现象.     

交换耦合双层膜NiO/Ni81Fe19的基片温度效应研究

用射频磁控溅射方法在不同基片温度下玻璃基片上分别制备NiO单层膜、NiFe单层膜和NiO／NiFe双层膜,研究了不同基片温度对膜的磁性能的影响．用振动样品磁强计（VSM）分析了膜的磁特性,结果表明：基片温度260℃时淀积的NiFe膜矫顽力Hc为184A·m－1,小于室温淀积NiFe膜的Hc（584A·m－1）,且磁滞回线的矩形度更好．室温下淀积NiO（50nm）／NiFe（15nm）双层膜的Hc为4000A·m－1,交换耦会场（HEX）仅为1600A·m－1,磁滞回线的短形度很差,而260℃时淀积的双层膜的Hc下降到3120A·m－1,HEX却增大为4640A·m－1,同时磁滞回线的矩形度也得到改善,其截止温度TB高达230℃．X射线衍射（XRD）分析了膜的织构,结果表明：室温下淀积NiO膜呈现（220）织构,而260℃时淀积NiO膜呈现（111）织构;室温和260℃淀积的NiFe膜都呈（111）织构,但后者晶粒比前者大．     

Si基片上Ag膜的微结构及光学常数研究

用真空蒸镀法在室温Si基片上制备了Ag薄膜，并用X射线衍射及反射式椭偏光谱技术对薄膜的微结构和光学常数进行了测试分析。结构分析表明：制备的Ag膜晶体仍为面心立方结构，呈多晶状态，晶粒择优取向于[111]，平均晶粒尺寸约为22.7nm，晶格常数（0.40860nm)比标准值（0.40862nm)略小。在250－830nm波长范围椭偏光谱测量结果表明：Ag膜的折射率和消光系数分别在0.15-1.49和0.31-5.77之间。与块材相比，在块材的折射率大于一定值（1.00-1.33)时，Ag膜的折射率比块材的小，其余范围则增大；Ag膜的消光系数减小。并给出了一套较为可靠的、具有实用价值的Ag薄膜光学常数。     

Heat exchange between a substrate and substrate holder in thermal contact

The article presents the results of an experimental investigation of high-temperature contact heat exchange between the polished surface of a substrate and the rough surface of a substrate holder under various conditions of contact between them in different gas media, under vacuum, and at different gas flow rates. Moscow Institute of Electronic Engineering, Moscow, Russia. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 69, No. 5, pp. 761–767, September–October, 1996.     

Effects of substrate temperature and substrate material on the structure of reactively sputtered TiN films

Stoichiometric TiN films were reactively magnetron sputtered in an Ar-N₂ atmosphere. The films were deposited at various substrate temperatures in the range 200–650°C onto two types of substrate material, high speed steel and stainless steel. The microstructure of the films obtained was investigated by the use of a transmission electron microscope and the morphology was studied in a scanning electron microscope. Measurements of the hardness were also performed. The analysis of the microstructure shows that the growth of the film is markedly influenced by the substrate material. In particular, the high speed steel substrates were found to have a considerable influence on the microstructure. The vanadium carbide particles in these steels, which have a good lattice match to TiN, stimulate a localized epitaxial growth to occur on these carbide particles. This results in a microstructure consisting of large grains surrounded by small grains. The shape of the large grains is influenced by the temperature. In the development of these large grains cracks and/or voids occur in and around the grains at substrate temperatures above 400°C and the hardness drops by about 20%. No large grains were found on films deposited onto stainless steel and their hardness increases slightly with temperature. High hardness for films deposited onto the high speed steel substrate at temperatures above 400°C can also be obtained if a substrate bias is used. Ion bombardment during film growth suppresses the formation of the large grains with voided or cracked boundaries because of a continuous renucleation process. The formation of the different microstructures is discussed in terms of surface energy minimization and thermally activated processes as surface and grain boundary migration.     

The influence of the substrate and the substrate temperature on the crystallinity of tin films

Thin films of tin were prepared on various substrates (NaCl, KCl, KBr and KI) and at various substrate temperatures (28–90°C) and were studied using transmission electron microscopy and selected area electron diffraction techniques. To determine the dependence on cleanness, tin was deposited on single-crystal surfaces prepared by vacuum cleaving. Films were prepared on substrate surfaces to which a parallel d.c. electric field (0–1000 V cm⁻¹) was applied. It was observed that the crystallites of tin films deposited on KBr were more preferentially oriented than those deposited on NaCl, KCl or KI. The effects of vacuum cleaving and of d.c. electric fields are discussed.     

金刚石涂层基体间结合力的测定

结合力是制约金刚石涂层工具大规模应用的关键因素之一.针对热丝化学气相沉积制备的金刚石薄膜的膜基结合力进行划痕实验,运用划痕仪所测的声发射数据、摩擦力数据及光学、电子扫描划痕形貌来综合评定膜基结合力.评定结果表明:单一的声发射图谱或摩擦力曲线不能准确判定膜基结合力的表征值临界载荷,声发射图谱、摩擦力曲线与划痕形貌综合评定临界载荷结果才可信.     

Interface between Sn-Sb-Cu solder and copper substrate

Influence of antimony and copper in Sn-Sb-Cu solder on the melting and solidification temperatures and on the microstructure of the interface between the solder and copper substrate after wetting the substrate at 623 K for 1800 s were studied. Microstructure of the interface between the solder and copper substrates in Cu-solder-Cu joints prepared at the same temperature for 1800 s was observed and shear strength of the joints was measured. Influence of the atmosphere - air with the flux and deoxidising N₂ + 10H₂ gas - was taken into account. Thermal stability and microstructure were studied by differential scanning calorimetry (DSC), light microscopy, scanning electron microscopy (SEM) with energy-dispersive spectrometry (EDS) and X-ray diffraction (XRD). Melting and solidification temperatures of the solders were determined. An interfacial transition zone was formed by diffusion reaction between solid copper and liquid solder. At the interface Cu₃Sn and Cu₆Sn₅ phases arise. Cu₃Sn is adjacent to the Cu substrate and its thickness decreases with increasing the amount of copper in solder. Scallop Cu₆Sn₅ phase is formed also inside the solder drop. The solid solution Sn(Sb) and SbSn phase compose the interior of the solder drop. Shear strength of the joints measured by push-off method decreases with increasing Sb concentration. Copper in the solder shows even bigger negative effect on the strength.     

Zinc phthalocyanine — Influence of substrate temperature, film thickness, and kind of substrate on the morphology

Zinc phthalocyanine (ZnPc), C₃₂H₁₆N₈Zn, is a planar organic molecule having numerous optical and electrical applications in organic electronics. This work investigates the influence of various deposition parameters on the morphology of vapour thermal evaporated ZnPc films. For this purpose, ZnPc is deposited at different substrate temperatures up to 90 °C and film thickness up to 50 nm onto various substrates. The morphology of this ZnPc layers is characterised by X-ray diffraction (XRD), X-ray reflectivity (XRR) and atomic force microscopy (AFM) methods. XRD measurements show that all ZnPc films are crystalline in a triclinic (α-ZnPc) or monoclinic (γ-ZnPc) phase, independent from the kind of substrate, layer thickness, or substrate temperature. The ZnPc powder, the starting product for the thermally evaporated ZnPc films, is present in the stable monoclinic β-phase. Thus, the stacking of the ZnPc molecules changes completely during deposition. The crystallite size perpendicular to the substrate determined by XRD microstructure analysis is in the range of the layer thickness while the lateral size, obtained by AFM, is increasing with substrate temperature and film thickness. AFM and XRR show an increase of the layer roughness for thicker ZnPc layers and higher substrate temperatures during film deposition. The strain in the ZnPc films decreases for higher substrate temperatures due to enhanced thermal relaxation and for thicker ZnPc films due to lower surface tension.     

Measuring mixed-signal substrate coupling

A measurement method is proposed to characterize the substrate coupling between digital and analog sections of a mixed-signal CMOS chip. Induced noise and spurious signals can be measured by a custom-designed analog sensor. This paper proposes a method that, when given such a sensor, allows to measure the crosstalk between digital and analog chip sections. Calibrated sampling scope measurements illustrate the performance of the measurement setup     

Effect of temperature and substrate surface texture on wettability and morphology of IMCs between Sn–0.7Cu solder alloy and copper substrate

In the present work, the effect of soldering temperature (270 and 298?°C) and substrate surface texture (0.02 and 1.12?μm) on wetting characteristics and morphology of intermetallic compounds (IMCs) between Sn–0.7Cu lead-free solder on copper substrates was investigated. It was found that increase in temperature and substrate surface roughness improved the wettability of solder alloy. However, the effect of surface roughness on wettability was significant as compared to that of temperature. The spreading of solder alloy was uniform on smooth substrate, whereas spreading of the alloy on rough substrate resulted in an oval shape. The morphology of IMCs transformed from long needle shaped to short and thick protrusions of IMCs with increase in surface roughness of the substrate. Needle shaped and thick protruded intermetallics formed at the solder/Cu interface were identified as Cu₆Sn₅ compounds. The formation of Cu₃Sn IMC was observed only for the spreading of solder alloy at 298?°C which contributed to improvement in the wettability of solder alloy on both smooth and rough substrate surfaces.     

钢铁表面超疏水膜的制备与表征

采用水热法结合氟硅烷修饰直接在钢铁表面制备超疏水膜。疏水膜的疏水性与钢铁基底的微纳米结构有重要关系。结果表明,以乙二胺为溶剂,经140℃水热反应4h和160℃水热反应5h,可以在钢铁表面制得具有次级网状结构的正八面体、花状等微纳米精细结构,再经氟硅烷修饰后表现出良好的超疏水性,与水滴的接触角分别达到156.49和165.31°。XRD的分析结果表明,该微纳米结构的主要成分是Fe3O4,它的形成一方面提供了制备超疏水表面所必须的微纳米精细结构,另一方面又为与氟硅烷发生反应生成牢固的薄膜创造了条件。电化学分析结果表明,超疏水膜层的存在显著降低了钢铁基底的腐蚀倾向。