Theoretical limits on SAR imposed by the ionosphere

The ultimate theoretical limitations on space-based synthetic aperture radar (SAR) image formation that are imposed by the ionosphere are examined. The effects on the SAR image are derived from first principles, and it is shown that the ionosphere will cause defocusing in both the range and along track directions. The performance of an autofocus procedure is then examined, and it is shown that the range defocusing can always be removed, but the range time delay can only be determined for high percentage bandwidths and high signal-to-noise plus clutter ratios. It is also shown that the performance limits of autofocus are not determined by the absolute total electron content, but are given by the amount of ionospheric turbulence, which limits the along track resolution. The relationship between the requirement for a focussed SAR image and the S4 index and the integrated strength of turbulence C/sub k/L is derived.     

炭包覆LiFePO4纳米片的制备及电化学性能研究

为改善磷酸铁锂正极材料的倍率性能, 以乙二醇为溶剂, 采用一步溶剂热法制备磷酸铁锂纳米片。再以葡萄糖为碳前驱体, 对磷酸铁锂纳米片进行炭包覆。通过X射线衍射, N₂吸脱附曲线、扫描电子显微镜、透射电子显微镜和循环伏安法等测试方法考察了炭包覆量对磷酸铁锂纳米片结构与电化学性能的影响。结果表明, 制备的磷酸铁锂为具有较短b轴的纳米片状结构, 尺寸约为150 nm×100 nm×60 nm。磷酸铁锂纳米片的倍率性能随炭包覆量的增加而增强, 当炭包覆量为6.4wt%时具有最佳的倍率性能, 在0.2C和10C的电流密度下放电容量分别为157.3和132.6 mAh/g。同时循环稳定性良好, 在5C电流密度下循环500次后容量保持率达到了80.2%。     

高质量水系钠离子电池正极Fe4[Fe(CN)6]3的合成及其电化学性能

采用水热法合成高质量的Fe₄[Fe(CN)₆]₃(HQ-FeHCF)纳米材料, 并对材料进行X射线衍射(XRD), 扫描电子显微镜(SEM), 透射电子显微镜(TEM)和热重分析测试(TGA)等表征。结果表明：Fe₄[Fe(CN)₆]₃呈规则立方体, 颗粒大小约500 nm, 属面心立方结构。Fe₄[Fe(CN)₆]₃在NaClO₄-H₂O-聚乙二醇电解液中1C、2C、5C、10C、20C、30C和40C的容量分别为124、118、105、94、83、74和64 mAh·g ^-1, 表现出优异的倍率性能; 以5C倍率循环500次, 容量保持率接近100%, 表现出极佳的循环稳定性。以Fe₄[Fe(CN)₆]₃和磷酸钛钠分别为正负极的全电池工作电压高达1.9 V, 能量密度可达126 Wh·kg ^-1; 以5C倍率恒流充放电测试140次后全电池容量保持率为92%, 且库伦效率始终接近100%。     

聚丙烯酰胺改性LiFePO4/C正极材料的研究

以聚丙烯酰胺(PAM)作为分散剂, 采用液相控制结晶-碳热还原法制备LiFePO₄/C正极材料, 考察了PAM对LiFePO₄/C正极材料性能的影响, 采用热化学分析、X射线衍射、扫描电镜、碳含量分析和充放电测试等分析测试手段对材料进行表征。结果表明, 将PAM溶于酸液中且添加量为1.5wt%时制备的LiFePO₄平均粒径约为100 nm, 颗粒分散较为均匀; 该材料在0.1C、1C、2C、5C和10C倍率下首次放电比容量分别为153.8、142.5、138.4、128.7和124.3 mAh/g, 1C倍率下循环100次后容量保持率仍在99%以上; 交流阻抗分析表明: 1.5wt%PAM改性后的材料的各种阻抗值均降低, 锂离子的导电速率提高了28倍。PAM改性后的LiFePO₄/C正极材料的离子及电子导电性提高了, 具有优良的倍率性能与循环性能, 有利于大规模推广应用。     

Bi过量以及冷却方式对BiFeO3-BaTiO3陶瓷的相结构及电学性能的影响

采用传统固相烧结法制备了0.7BiFeO₃-0.3BaTiO₃-xBi₂O₃(0≤x≤0.05)无铅压电陶瓷, 研究了Bi补偿量x和冷却方式对其相结构、微观形貌和综合电学性能的影响。结果表明：所有样品均为菱方相(R)和伪立方相(PC)两相共存, 0≤x≤0.01样品为纯的钙钛矿结构, 且x=0.01样品的两相比例C_R/C_PC接近1; x>0.01样品中出现富Bi杂相Bi₂₅FeO₄₀。与冷却方式相比, 优化Bi补偿量更有利于提升BFBT-xBi₂O₃陶瓷的压电性能。随着x增大, d₃₃先增大后减小, 在x=0.01时获得最优值。由于较小的晶粒、较合适的C_R/C_PC以及较大的残余应变, 水冷BFBT-0.01Bi₂O₃陶瓷获得了最优的压电性能(d_33水冷=141 pC/N、k_p=27%)和高T_C=507℃。研究结果表明, BFBT基陶瓷有希望成为兼具高压电性能和高T_C的无铅压电材料体系之一。     

Electrodeposition under a time-dependent boundary condition

The behaviour of the diffusion equation that results from assuming the boundary condition C(0,t)=C_b exp(−bt), with C_b (bulk concentration) and b constant, was examined. This condition reflects the behaviour of the diffusion around isolated nuclei growing onto a substrate. The diffusion equation under this boundary condition was solved and compared the results with the current transients obtained during electrodeposition. An expression for the fractional surface area of the deposit, S(t) and other parameters are obtained. The system reproduces the electrodeposition current transients in the chosen Cu²⁺/Cu couple and gives the values of the measured parameters at least within one order of magnitude. Some discrepancies between the theory and experimental results are examined and possible causes are suggested.     

Electric characterization of HfO2 thin films prepared by chemical solution deposition

Hafnium dioxide (HfO₂) thin films were prepared on Si substrates using the chemical solution deposition (CSD) method. The Au/HfO₂/n-Si/Ag structures were characterized by X-ray diffraction (XRD), C–V curves and leakage current measurements. A relative dielectric constant of about 13.5 was obtained for the 65 nm HfO₂ film. Atomic force microscopy (AFM) measurements show uniform surfaces of the films. C–V hysteresis was found for the metal-oxide-semiconductor (MOS) structures with HfO₂ films of 52 and 65 nm thick. It is found that the width of C–V windows is related with the thickness of the HfO₂ films. Furthermore, the C–V hysteresis reveals the possibility of stress-effect, suggesting that it is possible to use HfO₂ to build an MOS structure with controllable C–V windows for memory devices. The leakage current decreases as the film thickness increases and a relatively low leakage current density has been achieved with the HfO₂ film of 65 nm.     

The effect of second principal stress on the fatigue propagation of mode I surface crack in Al2O3/Al alloy composites

Using a plate made of A2017-T6 metal matrix composites reinforced with 10 volume % and 20 volume % Al₂O₃ particles and Al alloy possesses the same composition as matrix alloy, the crack propagation rate da/dN of a mode I surface crack by the simultaneous action of plane bending and cyclic torsion are studied. And the effects of crack tip opening stress σ_top, crack opening displacement COD, biaxial stress ratio C (=second principal stress/first principal stress) and the surface roughness of crack section are examined. When stress intensity factor range ΔK is lower than the specific level, da/dN decreases with the increase of volume fraction of Al₂O₃ in C=0 and C=−0.55. But, da/dN of Al alloy becomes minimum in C=−1 and the effect of Al₂O₃ particles disappears. σ_top rises with the increase of volume fraction of Al₂O₃ particles and the decline of C. On the other hand, COD doesn’t always rise with the decline of C. These phenomena can be explained by the residual compressive stress formed at the surface layer of the specimen by the fatigue test and the surface roughness of crack section.     

Dislocation link-length statistics and elevated temperature deformation of crystals

A new theory of elevated temperature deformation, based on the statistics of the distribution of dislocation link lengths, is developed. The distribution consists of a sessile region (L < L_c) in which network growth, or recovery, occurs by a coarsening process, and a glissile region (L > L_c) in which dislocation links are long enough to glide—L_c is a critical link length determined by the applied stress. New partial differential equations governing the evolution of the distribution of link lengths are derived for a model that assumes gliding links collide only with network links and produce only new network links. New equations which constrain the behavior of the distribution are formulated; the theory is shown to be self-consistent with respect to these equations. A proper expression for the strain rate is developed, which, with no ad hoc assumptions, automatically includes the contributions of network growth and dislocation glide. Using simple expressions for the rates of link growth in the sessile and glissile regions, equations describing the dislocation kinetics and the strain rate are derived. It is shown that these equations are consistent with experimentally observed transient creep behavior. An equation for the steady state creep rate is also presented which includes a ‘microstructural parameter’ that depends upon constants derivable from the distribution of dislocation link lengths. It is argued that the conventional notions of recovery-controlled and glide-controlled creep are most meaningful during transient deformation. During steady state deformation, however, these concepts have significance only with respect to whether the fraction of mobile dislocation links in the distribution produces the majority of the strain.     

Exclusion zone model of islands spatial distribution in molecular beam epitaxy

A simple model of islands spatial distribution based on the statistical nucleation model combined with a forbidden for nucleation zone is proposed. Islands nucleate at random points of uncovered substrate with a constant rate and then grow in a hemisphere at a constant velocity. Around each growing island there exists an exclusion zone of some width L within which nucleation is forbidden, while outside this zone islands continue to germinate in a usual spatially random fashion. By this model formulas for the probability that an arbitrarily chosen surface region at any given time moment t will be either empty or contain just one island, W₀(t) and W₁(t), respectively, are derived. Calculations with this formula shows that a simple introduction of the forbidden zone leads to some ordering degree in a spatial distribution of islands, similar to that observed in experiments, and provides a good quantitative coincidence with experiment at reasonable values of the model parameter L.     

Degrading effects of the lower atmosphere on long-range airborne synthetic aperture radar imaging

The imaging performance of airborne synthetic aperture radar (SAR) systems has advanced to the point that the effects of clear-air refractive index perturbations cannot be ignored. Operating at long ranges, and low grazing angles, in particular, require propagation geometries through regions of the lower atmosphere that may cause noticeable and, sometimes, severe degradation of the images. The range of image anomalies that can be attributed to the atmospheric boundary layer (ABL) is illustrated, the pertinent characteristics of the ABL is discussed, a first-order SAR imaging model that incorporates the refractive index perturbations associated with the ABL is developed and the magnitude of the image anomalies resulting from measured refractive index perturbations is estimated. The model predictions correlate well with the observed image anomalies and measured properties of the ABL. On the basis of theory and measurements, it is expected that the degrading effect of clear-air atmospheric refractive index perturbations is much more common than previously thought and may be a limiting factor for long-range SAR imaging performance.     

Quasicrystal films: numerical optimization as a solar selective absorber

Selective absorbers for solar thermal energy applications have to show high solar absorptance _s and low thermal emittance ε_h. Stability against oxidation and diffusion is indispensable, especially at high absorber temperatures. The new class of quasicrystalline materials seems to have favourable properties regarding stability. With a genetic algorithm a thin film stack based on dielectric and quasicrystal films was optimized as a selective absorber. A sandwich system dielectric/quasicrystal/dielectric on copper has highly selective properties: _s = 0.86 and ε_h (400 °C) = 0.051. Even better results can be achieved, at least in theory, by the use of a cermet. The optical constants of cermets with the quasicrystalline material as the metal were calculated with the Bruggeman theory. A system of a cermet film and an additional antireflective coating on copper shows _s = 0.92 and ε_h (400 °C) = 0.048.     

聚丙烯酰胺凝胶法制备Bi2Mn4O10及其电化学性能

Bi₂Mn₄O₁₀具有高的理论比容量, 被认为是一种理想的锂离子电池负极材料。本研究以硝酸铋和乙酸锰为原料, 采用聚丙烯酰胺凝胶法制备Bi₂Mn₄O₁₀负极材料, 考察了制备条件对Bi₂Mn₄O₁₀负极材料的物相、形貌及电化学性能的影响。结果表明: 在丙烯酰胺含量与总金属离子摩尔比为8 : 1, 葡萄糖浓度为1.11 mol/L, 热处理温度为873 K的条件下, 可得类球型、分散性良好的纯相Bi₂Mn₄O₁₀粉末。作为负极材料, Bi₂Mn₄O₁₀粉末在0.2C (1C=800 mA/g)倍率下循环50圈后可保持496.8 mAh/g的比容量, 容量保持率为76.9%; 3C倍率下放电容量为232 mAh/g。     

1/f Electrical Noise in Planar Resistors: The Joint Effect of a Backgating Noise and an Instrumental Disturbance

Any planar resistor (channel) close to a conducting layer left floating (gate) forms a capacitor C whose thermal voltage noise (kT/C noise) has a backgating effect on the sheet resistance of the channel that is a powerful source of 1/f resistance noise in planar resistors and, hence, in planar devices. This 1/f spectrum is created by the bias voltage V _DS applied to the resistor, which is a disturbance that takes it out of thermal equilibrium and changes the resistance noise that existed in the unbiased device. This theory, which gives the first electrical explanation for 1/f electrical noise, not only gives a theoretical basis for the Hooge's formula but also allows the design of proper shields to reduce 1/f noise.     

Structural correlations in light irradiated Ge36Se64 amorphous films—Radial distribution function study

The effect of laser irradiation on the electronic structure of amorphous Ge₃₆Se₆₄ films has been detected by studying the variation of the bond length (r) and the coordination number C_N. The total distribution function T(r) of the as deposited film is characterized by the first coordination sphere corresponding to the superposition of the correlation Ge–Se and Se–Se situated at 2.53 Å. The average estimated C_N is 2.519. The second peak ascribed to the correlation Se–Se lies at 3.85 Å showing good agreement with other published data. After irradiation, the first peak of T(r) shows a considerable shift towards a small r and a reduction of C_N. On the contrary, the second neighbor data shows a slight increase of r and a great increment of C_N value (5.11 before irradiation against 6.59 after irradiation). Study of the variation of both r and C_N values induced by subsequent annealing of the film is also given. The relative concentrations of the GeGe, GeSe and SeSe bonds, as well as, the number of the GeSe₄ tetrahedral per atom are calculated using the continuous random network (CRN) and the chemically order continuous random network (COCRN) models. These calculations argue the presence of Ge₂(Se_1/2)₆ ethane like unit in addition to Ge(Se₄)_1/2 even with the COCRN model. The formation of dynamical bonds during irradiation of the film under study is suggested. Correlation to volume changes during illumination studied by tight binding molecular dynamics computer simulation has been also considered.     

LiODFB基电解液的电化学性能及其与钛酸锂的相容性研究

采用电化学工作站测试了1 mol/L LiODFB (LiPF₆) EC+DMC+EMC(1:1:1 质量比)电解液的热稳定性及其对铝箔集流体的腐蚀性, 测试了LTO/Li电池的CV曲线及EIS图谱, 并采用电池性能测试系统测试电池的倍率性能和循环性能, 探索LiODFB电解液与LiFePO₄/LTO电极的相容性。结果表明: 在室温和60℃条件下, LiODFB电解液及其对铝箔的稳定性均优于LiPF₆电解液, 以LiODFB和LiPF₆为电解液的LTO/Li电池的CV曲线都具有单一的氧化还原峰, 且其首次充放曲线均具有稳定的充放电平台, 室温时以LiFePO₄/LTO为电极的LiODFB电池和LiPF₆电池在0.5C和1C倍率的电池性能相差不大; 室温和60℃时LiODFB电池的循环性能均优于LiPF₆电池, 60℃时尤为显著。     

Image fusion for synthetic aperture radar and multispectral images based on sub-band-modulated non-subsampled contourlet transform and pulse coupled neural network methods

Fusion of synthetic aperture radar (SAR) and multispectral (MS) images can contribute to a better visual perception of the objects observed. Unfortunately, many classical approaches have been proven to be unsuitable for this task due to their intrinsic differences in imaging mechanism. In the non-subsampled contourlet transform domain, an alternative fusion method based on pulse coupled neural networks is proposed. To control the amount of SAR features to be integrated into MS image, a gradient-threshold combined modulation is designed for modulating the SAR sub-band coefficients. Experiments demonstrate that the proposed method outperforms its counterparts in spectral preservation and feature enhancement.     

Computations of the Energetics of C60F36 Isomers

Three isomers of C₆₀F₃₆ are known from experiment (C₃, T, and C₁ symmetry). However, computations do not agree on their relative stabilities. In order to clarify the situation, DFT computations are carried out with different basis sets and several functionals. While lower level computations yield the C₃ isomer as the most stable, higher computational treatments consistently point out the T isomer as the lowest potential-energy species.     

Monte Carlo simulations of magnetic properties in multilayers

A Monte Carlo method has been used to simulate Heisenberg multilayer systems (L × L × 4P) consisting of alternating P ferromagnetic layers A and B with antiferromagnetic interface coupling J_AB. Finite-size effects on the specific heat and magnetisation thermal variation for two kinds of boundary conditions at the top and bottom planes are investigated. In particular, our Monte Carlo data evidence that the specific heat exhibits two peaks and a single phase transition occurs at the temperature which corresponds to the location of the high temperature peak (as L → ∞).     

Highly conducting Langmuir-Blodgett films of the TMTTF-CnTCNQ system

Highly conducting Langmuir-Blodgett (LB) films of the tetramethyltetrathia-fulvalene- alkyltetracyanoquinodimethane (TMTTF-C_n TCNQ, where C_n represents C_nH_2n+1) system are reported. The electron affinities of the acceptors C_nTCNQ (n=14, 18 or 22) in solution are almost the same and lie between those of TCNQ and dimethylTCNQ. These TCNQ derivatives form solid charge transfer complexes with TMTTF. The limiting areas of the complexes, normalized to the number of TCNQ derivatives at the air-water interface, are almost the same irrespective of the donor-to-acceptor ratio and of the length of the alkyl chain, indicating that the areas are governed by the TCNQ moiety. The monolayers of TMTTF-C_n TCNQ (n=14 or 18) are transferred onto solid substrates as LB films. Polarized UV-visible absorption spectra indicate that the long axis of TCNQ is parallel to the film surface. These LB films exhibit lateral conductivities as high as 0.4 S cm^-1 and 0.1 S cm^-1 when n=14 and n=18 respectively.