碲基掺铒光纤放大器增益均衡的数值模拟

针对宽带碲基掺铒光纤放大器(EDTFA)本征增益谱不平坦特性,研究了采用双级串连结构,并在两段光纤中间加入增益均衡滤波器来实现增益平坦.模拟结果显示,通过设计一定结构的滤波谱,在37信道同时输入的情况下,铒离子掺杂浓度为4000 ppm时,使1536～1608 nm范围带宽内的增益达到了24 dB左右,噪声指数小于5.5 dB,增益谱的不平坦度小于1 dB;铒离子掺杂浓度为6000 ppm时,使1536～1608 nm范围带宽内的增益达到了23.5 dB左右.噪声指数小于5 dB,增益谱的不平坦度小于1dB.优化后的级连EDTFA可以满足WDM系统的要求.     

Ku波段12 W GaAs pHMET功率MMIC

报道了一款采用0.25μm GaAs功率MMIC工艺研制的Ku波段功率放大器芯片。芯片采用三级放大拓扑结构,末级输出匹配电路按照高效率设计,同时优化前后级推动比控制前级电流。级间采用有耗匹配电路设计,提高大信号状态下的稳定性。在16~18GHz频带范围内漏压8.5V、脉宽1μs、占空比40%的工作条件下线性增益大于25dB;饱和输出功率大于12 W,饱和效率大于32%,功率增益大于21dB,功率增益平坦度小于±0.5dB。芯片尺寸为3.5mm×4.6mm。     

采用幅度均衡器的宽带毫米波低噪声放大器

对微带型幅度均衡器进行了理论分析和计算机仿真。微带型均衡器由微带谐振器上加载电阻构成,电阻的引入有效地展宽了频带。通过优化支节的长度、宽带和电阻的阻值,得到满足要求的均衡器。利用这种均衡器,对采用两级毫米波宽带MMIC的放大器进行了增益修正,使增益平坦度得到有效改善,同时对噪声的影响也较小。采用幅度均衡器最终实现的低噪声放大器在频率范围26.5～40 GHz内,增益为26.5～28.5 dB,增益平坦度优于±1.5 dB,噪声小于3.3dB,输入输出端口驻波小于2.0,输出1 dB压缩点功率大于10 dBm。     

毫米波GaAs单片限幅低噪声放大器

设计了一款毫米波GaAs单片限幅低噪声放大器。限幅器采用两级反向并联二极管结构,通过优化限幅器匹配电路,增大了限幅器的耐功率,降低了限幅电路的插损。低噪声放大器为四级级联设计,输入端采用最小噪声匹配,偏置电路增加RC串联谐振电路,减小了噪声,提高了电路稳定性。测试结果表明,该毫米波GaAs单片限幅低噪声放大器在33～37 GHz频带内,增益达到22 dB,增益平坦为±1 dB,输入驻波小于2,输出驻波小于1.5,噪声小于3.0 dB,输出1 dB增益压缩点(P_(1dB))大于5 dBm,可以承受15 W的脉冲输入功率。     

超宽带低温接收机后级低噪声放大器设计

设计了一种用于超宽频低温接收机后级放大的宽带低噪声放大器,并给出了仿真和测试结果。该低噪声放大器采用三个单片级联,并在级间加入了均衡和衰减网络对增益进行修正,使增益平坦度得到很大改善,同时对噪声等指标影响较小。最终实现的低噪声放大器在1～9GHz 频率范围内,常温噪声系数优于2dB,增益大于35dB,平坦度小于3.5dB,输入输出驻波比小于2.5,输出1dB 压缩点功率大于10dBm。     

X波段GaN MMIC低噪声放大器设计

采用SiC衬底0.25 μm AlGaN/GaN高电子迁移率晶体管(HEMT)工艺,研制了一款X波段GaN单片微波集成电路(MMIC)低噪声放大器(LNA).放大器采用三级级联拓扑,第一级采用源极电感匹配,在确保良好的输入回波损耗的同时优化放大器噪声系数;第三级采用电阻电容串联负反馈匹配,在尽量降低噪声系数的前提下,保证良好的增益平坦度、输出端口回波损耗以及输出功率.在片测试表明,在10 V漏级电压、-2 V栅极电压偏置下,放大器静态电流为60 mA,8～12 GHz内增益为22.5 dB,增益平坦度为±1.2 dB,输入输出回波损耗均优于-11 dB,噪声系数小于1.55 dB,1 dB增益压缩点输出功率大于11.9 dBm,其芯片尺寸为2.2 mm×1.1 mm.装配测试表明,噪声系数典型值小于1.6 dB,可承受33 dBm连续波输入功率.该X波段GaN低噪声放大器与高功率放大器工艺兼容,可以实现多功能集成,具有广阔的工程应用前景.     

3～20GHz宽带行波低噪声放大器的设计

介绍了基于0.15μm GaAs pHEMT工艺设计的3～20GHz MMIC宽带行波低噪声放大器。在整个宽频带范围内实现了大于11.5dB的功率增益,增益平坦度1.5dB,小于4.2dB的噪声系数,以及良好的输入输出回波损耗。最大饱和输出功率达到21dBm。该4级级联行波放大器的芯片面积仅为1.5mm×1.5mm。     

级连L波段EDFA优化的数值模拟与实验

对级连结构的L波段EDFA进行了优化设计.首先用加拿大Optiwave的OptiAmplifier4.0数值模拟了在其他条件确定情况下两级光纤长度比例变化对放大器性能的影响,在优化光纤长度比例的基础上,为了得到更宽的L-EDFA的本征平坦增益谱,进一步优化了前后级泵浦功率.在上述条件下利用42 m的铒纤得到实验结果为:ASE谱3 dB带宽1566.84～1606.80 nm(40 nm).在L波段(1570～1605 nm),小信号平均增益约为25 dB,增益不平坦度为±1 dB,噪声指数约为5 dB.     

一种Lx波段高功率放大器的设计与仿真

本文介绍了一种 Lx 波段高功率放大器的设计方法。利用 3dB 耦合器组成功率分配与合成网络，通过四路合成的方案实现了高功率输出，采用 ADS 软件对功率放大器进行仿真与优化。仿真与测试结果表明，在 Lx 频带内，输出功率大于 930W，效率大于 43%，增益平坦度小于 0.8dB，增益大于 15dB。     

基于ADS仿真的宽带低噪声放大器设计

设计了一个S频段宽带低噪声放大器.该放大器采用两级E-PHEMT晶体管(ATF541M4)级联结构,单电源供电模式.应用微波仿真软件ADS对匹配电路进行了优化设计,最后通过S参数及谐波平衡仿真得到放大器的各项性能参数,在2.7～3.1 GHz频率范围内噪声系数小于0.6 dB,带内增益大于30 dB,带内平坦度小于±1 dB,输入输出驻波比小于1.6 dB,1 dB增益压缩点输入功率不小于-15 dBm.仿真结果表明,该设计完全满足性能指标要求.     

S-band erbium-doped fiber amplifiers with a multistage configuration /sub e/sign, characterization, and gain tilt compensation

We report an S-band erbium-doped fiber amplifier (EDFA) with a multistage configuration in terms of its design, gain, and noise characteristics for various pump powers and input signal powers, the temperature dependence of the gain spectra, and gain tilt compensation for changes in input signal power and temperature change. We show that there is a tradeoff between low noise and efficiency in the S-band EDFA and describe the development of an S-band EDFA with a flattened gain of more than 21 dB and a noise figure of less than 6.7 dB. We also show that there is a change in the gain spectra with changes in the pump power and input signal power that is different from that observed in C- and L-band EDFAs, and that our EDFA has a temperature-insensitive wavelength. Furthermore, we develop a gain tilt compensated S-band EDFA that can cope with changes in input signal power and temperature.     

输入信号功率对EDFA增益斜率的影响

研究输入信号功率对掺铒光纤放大器(EDFA)增益斜率的影响,可为EDFA的优化设计提供理论参考.采用了实验分析和数值模拟两种方法,在EDF长度为14 m,输入波长为1530～1562 nm,泵浦光功率为400mW时,对输入信号功率为-5～5 dBm的EDFA增益斜率进行了对比,发现随着输入信号功率的增大,增益斜率也逐渐...     

一种新型宽带EDFA及其实验研究

文章提出了一种基于三端口增益平坦滤波器、且在拓扑结构上不同于以往并行或串行结构的掺铒光纤放大器（EDFA）的新结构。理论模拟显示，同常规的并行结构EDFA相比，该新型结构在保证C波段EDFA性能的同时亦可将L波段掺铒光纤（EDF）用量减少48％以上，改善L波段泵浦效率55％以上。实验中，我们在C波段使用两只输出功率分别为106．9和109．6mW的980nm泵浦激光器，两段EDF的长度分别为8．5和9．6m，在L波段我们仅用1只80mW的1480nm泵浦激光器，EDF长度为19．8m。试验结果显示，在C＋L波段内得到的信号增益〉23dB，增益平坦度〈0．6dB，噪声指数在C和L波段内分别〈4．4dB和5.6dB。     

具有动态增益均衡特性的低噪声全光增益箝位EDFA

针对全光增益箝位EDFA噪声指数恶化以及用于WDM系统时增益动态变化两个问题,提出具有动态增益均衡特性的低噪声全光增益箝位EDFA,在35 nm范围内,输入信号功率在-40 dBm到0 dBm之间变化时,增益变化被箝制在1 dB范围内,同时保持单波长输入噪声指数<4.5 dB,多波长输入增益谱不平坦度<0.4,噪声指数<5.5 dB,有效解决了以上问题.     

L波段EDFA的优化设计和实验验证

基于Giles模型,对L波段掺Er光纤放大器(EDFA)的特性进行了数值模拟,分析了采用高掺杂Er纤放大器输出性能的改善。根据数值分析的结果进行了优化设计,使用9m长的高掺杂Er光纤进行了实验研究。实验结果表明．在泵浦功率为100mw时,小信号增益在10dB以上,噪声指数小于6dB。     

Efficient erbium-doped fiber amplifiers incorporating an opticalisolator

A composite-EDFA configuration which incorporates an optical isolator has been investigated theoretically and experimentally. The isolator prevents the build-up of the backward-ASE and results in an amplifier with high gain and near-quantum-limited noise figure (NF). The optimum position of the isolator has been calculated as a function of the pump power so that minimum NF and maximum gain are achieved simultaneously. It is shown that under practical pump powers, the optimized composite EDFA exhibits a gain improvement of about 5 dB and a NF reduction in excess of 1.5 dB when compared with an optimized conventional EDFA. It is also shown that with further optimization the composite EDFA can be employed in a practical fiber link as a pre-amplifier without the use of an input isolator. Finally, a high-gain composite EDFA has been experimentally demonstrated which exhibits a gain of 51 dB (54 dB) and NF of 3.1 dB for only 435 mW (93 mW) of pump power     

Broad-band erbium-doped fiber amplifier with double-passconfiguration

We demonstrate a broad-band silica-based erbium-doped fiber amplifier (EDFA) with double-pass configuration. The signal gain and noise figure are obtained more than 24 dB and less than 6 dB, respectively, for 1526-1562 nm and 1569-1605 nm. The same signal gain can be achieved with 53% less pump power and 45% shorter erbium-doped fiber length, compared to a conventional parallel type EDFA. Furthermore, the noise figure and power conversion efficiency are improved for the wavelength range     

S波段连续波输出功率20W的SiC MESFET

采用自主开发的SiC外延材料和工艺技术,相继实现了S波段连续波状态下输出功率瓦级和10 W的SiC MESFET。经过版图设计的改进和工艺条件的优化,取得了S波段连续波状态下输出功率大于20 W,功率增益大于12 dB,功率附加效率大于30%的SiC MESFET研制结果。器件的功率增益和输出功率较以往的研制结果均得到显著提高,器件的反向截止泄漏电流也大幅度降低。由于器件未采用内匹配结构,其体积也比一般内匹配器件的体积小。研制结果为多胞合成实现更大功率输出的器件创造了条件,也使S波段连续波大功率输出器件的研制水平上了一个新的台阶。     

All optical gain-locking in erbium-doped fiber amplifiers usingdouble-pass superfluorescence

All optical gain-locking in an erbium-doped fiber amplifier (EDFA) is demonstrated. A double-pass superfluorescence is created by using a broad-band fiber reflector centered at 1530 nm at the output of the EDFA, to lock the gain at 21 dB. Experiments on an eight-channel wavelength-division-multiplexing system shows promise with gain variation between channels of less than 0.6 dB over the input signal power range. While, gain variation with input signal power is about 0.2 dB for all channels     

Segmented-clad fiber design for tunable leakage loss

This paper proposes a novel segmented-clad fiber (SCF) design in which the spectral variation of leakage loss of the fundamental mode can be finely tuned by varying the fiber parameters. A fiber with such optimized spectral variation of leakage loss should find application in the realization of inherently gain-flattened optical fiber amplifiers, wavelength filters, wavelength-flattened attenuators, etc. In this paper, the authors present SCF designs optimized for realizing inherently gain-flattened S-band erbium-doped fiber amplifier (EDFA) and high-gain discrete Raman fiber amplifier (RFA). Amplifier characteristics have been modeled in both cases, and simulations show that a 20-dB gain with /spl plusmn/0.9 dB of gain ripple over a 30-nm bandwidth in S-band is achievable with the designed EDFA based on the optimized SCF. In case of discrete RFA based on SCF, a 20-dB net gain with /spl plusmn/0.5-dB ripple is shown to be achievable over a 28-nm wavelength range in S-band.