基于“1+N”平台体系扩展的工业互联网新技术发展研究

互联网与工业产业之间的深度融合,带动了工业互联网技术的飞速发展。在云计算、人工智能等多重先进技术的保障下,工业领域已经实现“1+N”平台体系建设,形成了以基础工业互联网平台为核心,面向行业级、区域级、企业级发展工业互联网新技术的全新规划,这不仅提升了我国工业产业智能化转型速度,更为企业开展内部智能化技术改革提供了指导。文中对“1+N”平台体系扩展下的工业互联网新技术发展进行了研究,探讨了工业互联网新技术体系发展目标以及当前发展的总体布局情况,并对“1+N”平台体系拓展下的未来工业互联网新技术发展策略进行了研究。     

Ferromagnetism in diluted Pb1 ? x ? y Ge x Cr y Te magnetic semiconductors

Magnetic properties of Pb_{1 − x − y} Ge _x Cr _y Te alloys (x = 0.02–0.20, y = 0.01–0.08) were studied. It was detected that the magnetic susceptibility of alloys consists of two contributions: the paramagnetic Curie-Weiss part (the temperature region is T < 50 K) caused, probably, by the Cr³⁺ ion paramagnetism, and the high-temperature ferromagnetic part (T < 300 K). The dependences of the concentration of magnetic centers on the composition of the matrix were obtained from the paramagnetic and ferromagnetic contributions. It was shown that a decrease in the concentration of paramagnetic centers can be, at least qualitatively, explained by the transformation of the electronic structure as the germanium concentration increases. A phenomenological model was suggested, which explains the behavior of magnetic properties as the chromium content increases, and possible mechanisms of ferromagnetic ordering in studied alloys are discussed. Original Russian Text ? E.P. Skipetrov, M.G. Mikheev, F.A. Pakpour, L.A. Skipetrova, N.A. Pichugin, E.I. Slyn’ko, V.E. Slyn’ko, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 3, pp. 316–323.     

Surface and Interface Properties of Metal-Organic Chemical Vapor Deposition Grown a -Plane Mg x Zn1– x O (0?≤ x ≤?0.3) Films

The a-plane Mg _x Zn_1−x O (0 ≤ x ≤ 0.3) films were grown on r-plane () sapphire substrates using metal-organic chemical vapor deposition (MOCVD). Growth was done at temperatures from 450°C to 500°C, with a typical growth rate of ∼500 nm/h. Field emission scanning electron microscopy (FESEM) images show that the films are smooth and dense. X-ray diffraction (XRD) scans confirm good crystallinity of the films. The interface of Mg _x Zn_1−x O films with r-sapphire was found to be semicoherent as characterized by high-resolution transmission electron microscopy (HRTEM). The Mg _x Zn_1−x O surfaces were characterized using scanning tunneling microscopy (STM) in ultrahigh vacuum (UHV). Low-energy electron diffraction (LEED) shows well-ordered and single-crystalline surfaces. The films have a characteristic wavelike surface morphology with needle-shaped domains running predominantly along the crystallographic c-direction. Photoluminescence (PL) measurements show a strong near-band-edge emission without observable deep level emission, indicating a low defect concentration. In-plane optical anisotropic transmission was observed by polarized transmission measurements.     

Properties and structure of (As2Se3)1 ? z (SnSe2) z ? x (Tl2Se) x and (As2Se3)1 ? z (SnSe) z ? x (Tl2Se) x glasses

Tin is stabilized in the bivalent and tetravalent states in the structure of (As₂Se₃)_{1 − z} (SnSe₂) _{z − x} (Tl₂Se) _x and (As₂Se₃)_{1 − z} (SnSe) _{z − x} (Tl₂Se) _x glasses. The presence of bivalent tin in the structural network of a glass does not give rise to extrinsic conductivity. Dependences of density, microhardness, and the glass-transition temperature on the composition of the glasses are interpreted using a model according to which the structure of the glasses is composed of structural units that correspond to As₂Se₃, AsSe, TlAsSe₂, Tl₂Se, SnSe, and SnSe₂ compounds. Original Russian Text ? G.A. Bordovsky, A.V. Marchenko, E I. Terukov, P.P. Seregin, T.V. Likhodeeva, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 11, pp. 1353–1356.     

Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/Ga x In1 ? x As y P1 ? y /GaInP/GaAs(001) heterostructures

Structural and optical properties of two- and three-layer epitaxial heterostructures containing GaInP/Ga _x In_{1 − x} As _y P_{1 − y} quaternary alloy layers were studied. Domain formation due to spinodal decomposition of the quaternary alloy was detected in three-layer heterostructures. As a result, an additional long-wavelength band appears in the photoluminescence spectra, and an additional doublet of the line appears in X-ray diffraction patterns of the (006) line. The domain composition was determined on the basis of Vegard’s law and the Kouphal equation. Original Russian Text ? E.P. Domashevskaya, N.N. Gordienko, N.A. Rumyantseva, B.L. Agapov, P.V. Seredin, L.A. Bityutskaya, I.N. Arsent’ev, L.S. Vavilova, I.S. Tarasov, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 9, pp. 1086–1093.     

Flexibility of p–n Junction Formation from SWIR to LWIR Using MBE-Grown Hg(1–x)CdxTe on Si Substrates

In this paper, we show the versatility of using molecular-beam epitaxy (MBE) for the growth of the mercury cadmium telluride (HgCdTe) system. Abrupt composition profiles, changes in doping levels or switching doping types are easily performed. It is shown that high-quality material is achieved with Hg_(1–x)Cd _x Te grown by MBE from a cadmium mole fraction of x = 0.15 to x = 0.72. Doping elements incorporation as low as 10¹⁵ cm⁻³ for both n-type and p-type material as well as high incorporation levels >10¹⁸ cm⁻³ for both carrier types were achieved. X-ray curves, secondary-ion mass spectrometry (SIMS) data, Hall data, the influence of doping incorporation with cadmium content and growth rate, etch pit density (EPD), composition uniformity determined from Fourier-transform infrared (FTIR) transmission spectro- scopy, and surface defect maps from low to high x values are presented to illustrate the versatility and quality of HgCdTe material grown by MBE. All data presented in this work are from layers grown on silicon (112) substrate.     

Effect of Atmosphere on n -Type Hg1– x Cd x Te Surface after Different Wet Etching Treatments: An Electrical and Structural Study

The impact on surface recombination velocity (SRV) and minority carrier lifetime of three wet etchants are examined here. The etchants are 60DI +  10HBr + 1H₂O₂ (by volume), 1% bromine–methanol, and 2% bromine–lactic acid. After initial etching, the HgCdTe surfaces were exposed in specific time steps to the atmosphere. At each step in the process, the effect of each etchant and of exposure to atmosphere was determined by photoconductive decay (PCD) measurements as well as by x-ray photoelectron spectroscopy (XPS). The PCD results showed that the 60DI + 10HBr + 1H₂O₂ etchant, after exposure to atmosphere, led to a relatively small change in SRV compared to the changes that occurred for the two bromine-based etchants. In addition, XPS measurements showed that there were no neutral tellurium inclusions in the case of 60DI + 10HBr + 1H₂O₂ and that TeO₂ formed strictly out of tellurium bonded to HgCdTe. Moreover, TeO₂ formed at a much slower rate on surfaces etched with HBr compared with those etched with the bromine-based etchants. A model is proposed in terms of band alignment at HgCdTe-Te⁰ and HgCdTe-TeO₂ interfaces to explain the different surface recombination mechanisms that are due to different etchants and to atmospheric exposure.     

一种新型的Q值与L值可相互独立调谐的低噪声有源电感

提出了一种新型的品质因数(Q)与电感值(L)可相互独立调谐的低噪声有源电感。该电感主要由双回转器、调制支路、可调反馈电阻、跨导增强支路和噪声抑制单元构成。其中,双回转器是由第一回转回路和第二回转回路并联而成,获得了大电感值;调制支路不仅能减小等效并联电阻,提高Q值,还可实现对电感值的大范围调谐;可调反馈电阻不仅能增大Q值,还能实现对Q值的独立调节,也能补偿因调谐L值引起的Q值的变化;跨导增强支路和噪声抑制单元分别降低了第一回转回路和第二回转回路的噪声,从而降低有源电感的整体噪声。最终,通过上述电路模块的紧密配合及所配置的三个外部调控端电压的深度协作,实现了Q值与L值可相互独立调谐以及低噪声的优异特性。仿真结果表明,该有源电感在3.8 GHz频率下,Q峰值可从674调节到5 083,调谐率为153.2%,而L值变化率仅为0.3%;在3.65 GHz下,L值可由6.1 nH调节到15.5 nH,调谐率高达87%,而与之对应的Q值的变化率仅为3.7%;在2~6 GHz范围内,有源电感的最大和最小输入噪声分别为5.29 nV/Hz和1.75 nV/Hz。     

I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 ? xx(CdS)x

The I–V characteristics of the p-Si-n-(Si₂) _{1 − x} (CdS) _x (0 ≤ x ≤ 0.01) structures are investigated at various temperatures. It is found that the I–V characteristic of such structures has a sublinear portion of the current growth with voltage V ≈ V ₀exp(JaW). The experimental results can be explained on the basis of the theory of the injection depletion effect. It is shown that the mobility of the minority carrier (hole) decreases with an increasing temperature. Original Russian Text ? A.S. Saidov, A.Yu. Leyderman, Sh.N. Usmonov, K.T. Kholikov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 4, pp. 436–438.     

一种2m元域上量子纠错码的构造方法

构造具有良好参数的量子码是量子纠错码研究的重要内容。该文利用有限非链环$ R = {F_{{4^m}}} + v{F_{{4^m}}} $上的厄米特对偶包含常循环码来构造$ {2^m} $元量子码。定义了一种新的Gray 映射$ \phi $,能够将环$ R $上线性码$ C $的厄米特对偶包含性保持到$ \phi (C) $上。研究了环$ R $上常循环码是厄米特对偶包含码的条件。给出了一种构造$ {2^m} $元量子码的方法,并构造了一些新的4元和8元量子码。     

Fe3+-substitution effect on the thermal variation of J–E characteristics and DC resistivity of quadruple perovskite CaCu3Ti4O12

The electrical properties of cubic perovskite series, CaCu_3–xTi_4–xFe_2xO₁₂ with x = 0.0, 0.1, 0.3, 0.5, and 0.7, have been studied by employing current density as a function of electric field characteristics registered at different temperatures and thermal variations of direct current electrical resistivity measurements. All of the compositions exhibit strong non-ohmic behavior. The concentration dependence of breakdown field, the temperature at which switching action takes place, and maximum value of current density (J_max) has been explained on account of structural, microstructural, and positron lifetime parameters. The highest ever reported value of J_max = 327 mA/cm² has been observed for pristine composition. The values of the nonlinear coefficient advise the suitability of ceramics for low-voltage varistor applications. The Arrhenius plots show typical semiconducting nature. The activation energy values indicate that electric conduction proceeds through electrons with deformation in the system.     

Optical properties of quaternary GaNxAsyP1 ? x ? y semiconductor alloys

The optical properties of quaternary GaN _x As _y P_{1 − x − y} semiconductor alloys grown on a GaP (100) substrate surface are studied by photoluminescence spectroscopy in the temperature range 20–300 K and by photoluminescence excitation spectroscopy at liquid-nitrogen temperature. The measurements are carried out for the GaN _x As _y P_{1 − x − y} alloys, for which the nitrogen and arsenic molar fractions x and y range from 0.006 to 0.012 and from 0.00 to 0.18, respectively. A comparative analysis of the data is conducted, and the dependences of the energy position of the photoluminescence peak on the composition of the quaternary alloy are established. From the studies of photoluminescence in the range 20–300 K, it is found that the temperature dependence of the position of the photoluminescence peak substantially differs from the behavior described by Varshni’s expression.     

Optical properties of quantum-confined heterostructures based on GaPxNyAs1 ? x ? y alloys

The results of calculations of the band gap in GaP _x N _y As_{1 − x − y} alloys and the estimated parameter of hybridization of the conduction band in GaP and the localized level of nitrogen are reported. The optical properties of quantum-confined heterostructures based on GaP _x N _y As_{1 − x − y} alloys synthesized on the GaP (100) substrate surface are studied by photoluminescence measurements in the temperature range of 15–300 K. The heterostructures consist of GaP_0.814N_0.006As_0.18 quantum wells separated by GaP barrier layers. The well width and the barrier thickness are 5 nm. Heterostructures with different numbers of periods are considered. On optical excitation of the structures, an intense photoluminescence line is observed in the spectral range 620–650 nm. The photoluminescence spectra of the GaP_0.814N_0.006As_0.18/GaP quantum wells are profoundly broadened because of the inhomogeneity of the quaternary alloy in composition. It is established that the increase in the number of quantum well layers from 10 to 25 does not results in degradation of the photoluminescence properties of the heterostructures. The results of the study support the view that it is possible to produce efficient optoelectronic devices on the basis of GaP _x N _y As_{1 − x − y} alloys.     

基于螺旋弹簧的引信用低g值MEMS惯性开关

微机电系统(MEMS)惯性开关在引信领域有广阔的应用前景,但可用于引信工作环境的低g值型MEMS惯性开关较少。对此,为低发射过载的弹药引信提出一种低闭合阈值的MEMS惯性开关设计方案,满足引信识别低g值冲击信号的功能需求,实现稳定接通引信电源的功能,同时具备抵抗引信工作环境中高过载的能力,提高引信可靠性。依据触发信号特征和引信工作环境提出设计要求,对惯性开关的振荡模型进行理论分析,阐明惯性开关结构尺寸对开关性能的影响规律,给出开关整体设计方案,并应用ANSYS有限元软件对设计结果进行仿真验证。仿真结果表明,所设计的惯性开关能够监测幅值为20g、脉宽为1 ms的冲击信号,开关响应时间小于1 ms,电极接触时间长于30 μs,抗过载性能达到12 000g,满足性能指标要求。     

0.75PZT-xPZN-(0.25-x)PNN压电陶瓷的相结构和电性能

采用传统固相法制备了0.75Pb(Zr_1/2Ti_1/2)O₃-xPb(Zn_1/3Nb_2/3)O₃-(0.25-x)Pb(Ni_1/3Nb_2/3)O₃(0.75PZTxPZN(_0.25-x)PNN,摩尔分数x=0.05,0.10,0.15,0.20)压电陶瓷,研究了x值对陶瓷晶体结构、烧结特性、微观组织和介电、铁电、压电性能的影响规律。结果表明,陶瓷中三方相和四方相共存,当x=0.10~0.20时,陶瓷组分位于准同型相界(MPB)附近。随着PZN含量的增加,三方相含量减少,四方相含量增加,陶瓷的介电常数(ε_T)、压电常数(d₃₃)、机电耦合系数(k_p)和能量转化因子(d₃₃×g₃₃)均随之先增大后减小,当x=0.15时,0.75PZT-0.15PZN-0.10PNN陶瓷具有最佳电学性能,即ε_T=1 850,公电损耗tan δ=0.029,居里温度T_C=280 ℃,d₃₃=370 pC/N,k_p=0.67。     

U型高K介质膜槽栅垂直场板LDMOS

近年来,随着汽车电子和电源驱动的发展,集成度较高的LDMOS作为热门功率器件受到了关注,如何提高其击穿电压与降低其比导通电阻成为提高器件性能的关键。基于SOI LDMOS技术,文章提出了在被4 μm的高K介质膜包围的SiO₂沟槽中引入垂直场板的新型结构。与传统沟槽LDMOS相比,垂直场板和高K介质膜充分地将电势线引导至沟槽中,提高了击穿电压。此外垂直场板与高K介质和漂移区形成的MIS金属-绝缘层-半导体电容结构能增加漂移区表面的电荷量,降低比导通电阻。通过二维仿真软件,在7.5 μm深的沟槽中引入宽0.3 μm、深6.8 μm的垂直场板,实现了具有300 V的击穿电压和4.26 mΩ·cm²的比导通电阻,以及21.14 MW·cm-2的Baliga品质因数的LDMOS器件。     

高Q值横向激发体声波谐振器的设计与制备

随着5G移动通信时代的发展,射频前端(RF front-ends)的滤波和信号处理迫切需要高频大带宽的声学谐振器。横向激发体声波谐振器(XBAR)具有超高的工作频率和超大的机电耦合系数(k²),但其品质因数(Q)值不高,阻碍了其在射频前端中的应用。该文提出了一种基于ZY切铌酸锂(LiNbO₃)的XBAR谐振器,通过有限元(FEM)仿真对谐振器进行了优化设计,并在微机电系统(MEMS)工艺下对谐振器进行加工。该文所制备的横向激发体声波谐振器A₁模式的谐振频率为4.72 GHz,k²=26.9%,Q_{3 dB}为384,温度频率漂移系数为-60.5×10^-6/℃。A₃模式的谐振频率为13.5 GHz,k²=4.4%。     

基于高Q值Si3N4片上光学微腔的孤子光频梳

高Q值片上微腔已被证明是一种性能优异的克尔孤子光学频率梳产生平台。由片上多模波导构成的Si₃N₄微腔可以同时实现产生暗孤子所必须的高品质因子和反常色散。为了进一步降低产生单孤子光频梳的阈值功率,文章设计了一种具有欧拉弯曲的新型跑道型Si₃N₄微腔,与传统的圆形弯曲波导相比,跑道型微腔直波导连接处弯曲半径的突然变化被显著抑制,这抑制了高阶模式耦合并降低了传播损耗,从而获得了超过5×10⁶的品质因子。基于该新型微腔,使用辅助激光加热方法仅用47mW泵浦激光器(估计片上泵浦功率为33mW)就产生了重复频率在Ka波段且带宽超过20nm(对应于129fs的脉冲持续时间)的单孤子微腔光频梳。     

A fractional-N frequency divider for multi-standard wireless transceiver fabricated in 0.18 μm CMOS process

With the rapid evolution of wireless communication technology,integrating various communication modes in a mobile terminal has become the popular trend.Because of this,multi-standard wireless technology is one of the hot spots in current research.This paper presents a wideband fractional-N frequency divider of the multi-standard wireless transceiver for many applications.High-speed divider-by-2 with traditional sourcecoupled-logic is designed for very wide band usage.Phase switching technique and a chain of divider-by-2/3 are applied to the programmable frequency divider with 0.5 step.The phase noise of the whole frequency synthesizer will be decreased by the narrower step of programmable frequency divider.△-Σ modulator is achieved by an improved MASH 1-1-1 structure.This structure has excellent performance in many ways,such as noise,spur and input dynamic range.Fabricated in TSMC 0.18 μm CMOS process,the fractional-N frequency divider occupies a chip area of 1130 × 510μm2 and it can correctly divide within the frequency range of 0.8-9 GHz.With 1.8 V supply voltage,its division ratio ranges from 62.5 to 254 and the total current consumption is 29 mA.     

Single-Crystal Investigations on Quaternary Clathrates Ba8Cu5SixGe41?x (x?=?6, 18, 41)

Type I clathrates have been considered as promising thermoelectric materials due to their special structural characteristics: the “rattling” guest atoms in the larger of the two cages of the clathrate I structure are frequently held responsible for the low lattice thermal conductivity. By single-crystal x-ray diffraction, we investigated the quaternary clathrates Ba₈Cu₅Si _x Ge_41−x (x = 6, 18, 41). Rietveld refinements confirmed that the clathrates in this system crystallize with cubic primitive symmetry, in the type I clathrate structure, and that no phase transitions occur in the temperature range investigated (100 K to 300 K). We derive the concentration dependencies of the Debye temperature, the Einstein temperatures, the static disorder parameters, and the size of the two cages and argue that these dependencies underpin the previously assumed different bonding character of the Ba guest atoms in the larger and smaller cages. The linear thermal expansion coefficients for the samples are derived.