Sr~(2+)替代Bi~(3+)对Bi_(1.5)ZnNb_(1.5)O_7陶瓷介电性能的影响

研究了Sr~(2+)替代Bi~(3+)对Bi_(1.5)ZnNb_(1.5)O_7系介质材料相结构、烧结特性和介电性能的影响。研究结果表明,当Sr替代量x≤0.2时,样品的相结构无其他杂相;在1 MHz下,介电常数随x的增加而逐渐减小,介电损耗随x的增加而逐渐增大;在-195~130℃,在介电常数存在明显的介电弛豫现象,在1 MHz下的峰值温度依次为:-106.4℃、-107.3℃、-108.5℃、-109.7℃。     

CuO掺杂对Bi_(1.5)ZnNb_(1.5)O_7介质陶瓷性能的影响

采用固相反应法制备Bi_(1.5)ZnNb_(1.5)-xCu_xO_7介电陶瓷,研究了Cu~(2+)替代Nb~(5+)对α-BZN烧结温度、相结构以及介电性能的影响。研究可知:CuO替代能显著降低BZN烧结温度约150℃,材料结构允许的掺杂范围为x≤0.15,样品随掺杂量增加易出现第二相,介电性能也随之变差。CuO掺杂对介电常数温度系数具有明显的调节作用,当x=0.1 mol,在1 MHz下样品获得最佳性能:ε_r=144.226、tanδ=0.0038976、τ_f=-51.61×10~(-6)。     

锑掺杂替代铌对α-BZN陶瓷结构和介电性能的影响

研究了Sb~(3+)掺杂替代B位的Nb~(5+)对Bi_(1.5)ZnNb_(1.5-x)SbxO_7系介质材料烧结特性、结构和介电性能的影响。研究结果表明,低熔点锑掺杂能略降低烧结温度至960℃,当锑替代量x≤0.2时,衍射峰向低角度方向移动,样品的相结构与基体α-BZN保持一致;在1 MHz下,介电常数随锑掺杂量而逐渐减小,介电损耗随锑掺杂量而略增大;在-195～150℃,介电常数在低温区存在明显的介电弛豫现象,介电弛豫程度先减小后增大,常温区的温度系数随锑掺杂量增加呈逐渐减小。     

Er^(3+)掺杂对立方焦绿石陶瓷结构与介电性能的影响EI北大核心CSCD

采用固相反应法制备(Bi1.5–x Erx Zn0.5)(Zn0.5Nb1.5)O7(BEZN,x=0、0.05、0.10、0.15、0.20、0.25、0.30)陶瓷,研究了Er3+替代Bi3+对(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7(BZN)陶瓷结构与介电性能的影响。结果表明:当Er3+掺杂量x<0.15 mol时,样品为单一α-BZN相;当x≥0.15 mol时,出现第二相。用分子动力学计算Er3+分别进入A、B位的溶解能结果可知,此时Er3+可能已进入B位。随Er3+掺杂量增加,Er3+进入晶格,BEZN陶瓷密度从6.999 g/cm3减小到6.680 g/cm3,有明显细化晶粒作用。一定频率(1 MHz)条件下,峰值介电常数随Er3+掺杂量增加而减小,弛豫峰温度范围介电常数变化量Δε逐渐减小,即弛豫峰逐渐宽化和平坦。     

Al替代Nb对α-BZN介质材料介电性能的影响研究

Al~(3+)替代B位Nb~(5+)对α-BZN电介质材料烧结特性、相结构和介电性能的影响。研究表明:当Al~(3+)掺杂量x≤0.2时,样品的相结构与基体结构一致;在1 MHz下,介电常数随x的增加而逐渐增大,介电损耗随x的增加略减小后增大;在-195～150℃,其介电常数存在明显的介电弛豫现象,在1 MHZ下的峰值温度依次为:-98.8℃、-101.4℃、-99.6℃、-93℃。     

Zn2+掺杂对0.965MgTiO3-0.035SrTiO3微波介质陶瓷结构与性能影响研究

采用固相反应法制备了0.965 MgTiO3-0.035SrTiO3 (MST)微波介质陶瓷,选用Zn2+对MST陶瓷进行了A位离子掺杂,研究了不同Zn2+掺杂量对陶瓷烧结性能、晶相组成、显微结构及微波介电性能的影响.结果表明,Zn2的掺入促进了陶瓷的烧结,显著提高了陶瓷的致密度,且没有改变陶瓷的主晶相.在掺杂量小于0.04mol％范围内,随着Zn2+掺杂量的增加,陶瓷的介电常数增加,品质因素和频率温度系数略有降低.中间相MgTi2 O5的衍射峰强度随着Zn2+掺杂量的增加逐渐减弱直至完全消失.当Zn2掺杂量为x=0.03时,陶瓷的烧结温度由1380℃降低至1290℃,并呈现优异的微波介电性能:εr=22.51,Q×f=16689 GHz,τf=-4.52×10-6/℃.     

BiVO4掺杂对(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7陶瓷介电性能的影响

采用传统陶瓷工艺制备了BiVO4掺杂的(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7(bismuth zincate niobate,BZN)介质陶瓷,用X射线衍射、扫描电镜以及电感-电容-电阻测试仪等对其烧结特性、相结构及介电性能进行了系统研究.结果表明BiVO4掺杂能显著降低BZN的烧结温度,由1 000℃降至850℃,同时可优化频率温度系数τf,由-450×10-6/℃变为-254×10-6/℃.BiVO4的掺杂量为5%,烧结温度为900℃时,BZN陶瓷具有较好的介电性能介电常数ε=153,品质因数Q=2 100,频率温度系数τf=-350×10-6/℃.     

Bi1.5+xZn1.0Nb1.5O7+1.5x（x=0.075,0.15）陶瓷的结构和介电性能

采用固相反应法,以立方焦绿石Bi_1.5Zn_1.0Nb_1.5O₇（BZN）为配方基础,通过改变Bi³⁺离子与O^2-离子的浓度,形成非化学计量比Bi_1.5+xZN_1.0Nb_1.5O_7+1.5x（x=0.075,0.15）陶瓷。研究了不同Bi含量和烧结温度对BZN陶瓷的结构、微观形貌以及介电性能的影响。结果表明制备的非化学计量比BZN陶瓷在不高于1050℃时,呈现焦绿石单相结构;随着烧结温度增加到1100℃,x=0.075,出现ZnO杂相;x=0.15,出现Bi₂O₃杂相。随着x值的增大,BZN陶瓷样品的晶格常数、密度以及介电常数都逐渐增加。     

基于固态法制备Sr_(1-1.5x)Bi_xTiO_3陶瓷的特性研究

Sr Ti O3属于ABO3型钙钛矿结构,具有良好的固溶能力,通过掺加杂质元素改善其性能。本研究利用固态法制备Sr_(1-1.5x)Bi_xTiO_3陶瓷(x=0.00、0.01、0.04、0.07、0.10),并探讨了Bi掺杂对其结构与介电常数的影响。研究结果表明:Bi掺杂量x≥0.04时陶瓷的晶体结构是以立方晶与四方晶两相共存的形式存在,而Bi2+在Sr Ti O3结构中的固溶极限为x≤0.01,当x=0.04时陶瓷的最大介电常数约为1 200,相变温度则随x增加而逐渐向高温度方向偏移。     

溶胶–凝胶法制备(Na0.50+xK0.50-2xLix)Nb0.9Ta0.1O3无铅压电陶瓷及其性能

采用溶胶–凝胶法制备Li+取代(K0.5Na0.5)+及Ta5+取代Nb5+的(K0.5Na0.5)NbO3陶瓷粉体,采用无压烧结工艺制备(Na0.50+xK0.50–2xLix)Nb0.9Ta0.1O3(x=0,0.02,0.04)陶瓷样品。研究了前驱体煅烧温度对陶瓷粉体物相组成的影响。分析了不同Li+掺杂量对样品物相组成、微观结构、体积密度及电学性能的影响。结果表明:前驱体的最佳煅烧温度为600℃,通过透射电子显微镜分析陶瓷粉体的粒径为49 nm;不同Li+掺杂量制备的(Na0.50+xK0.50–2xLix)Nb0.9Ta0.1O3陶瓷样品均为正交相钙钛矿结构;随着Li+掺杂量的增加,(Na0.50+xK0.50–2xLix)Nb0.9Ta0.1O3陶瓷的体积密度先增大后减小,介电常数逐渐升高,压电常数先降低再升高,剩余极化强度逐渐升高。Li+掺杂量x为0.04时样品的压电常数(d33=94 pC/N)、相对介电常数(εr=684.33)及剩余极化强度(Pr=98.27μC/cm2)较好。     

Ce3+掺杂的Ca1.5Y1.5Al3.5Si1.5O12荧光粉发光性能研究

采用高温固相法合成白光LED用Ca1.55Y1.5Al3.5Si1.5O12:x Ce3+黄绿色荧光粉,利用X-射线粉末衍射和荧光光谱进行表征。实验结果表明,在紫外近紫外区(200~380nm)激发下荧光粉发射光谱主峰位于402nm,在蓝光454nm激发下荧光粉发射光谱主峰位于530nm。当灼烧温度为1623K,Ce3+掺杂浓度为10%,发光强度最高。随着Ce3+的掺杂增加会发生浓度猝灭。该荧光粉与商业近蓝光芯片发射相匹配,是一种优秀的白光LED用黄绿色荧光粉。     

Comparison of microwave dielectric behavior between Bi1.5Zn0.92Nb1.5O6.92 and Bi1.5ZnNb1.5O7

The microwave dielectric, Bi_1.5ZnNb_1.5O₇ exhibits low-temperature dielectric relaxation. To find the origin of the dielectric relaxation of Bi_1.5ZnNb_1.5O₇, we studied the structure and dielectric behavior of Bi_1.5ZnNb_1.5O₇ in detail. The Bi_1.5ZnNb_1.5O₇ is not composed of a single phase pyrochlore structure. Instead, it consists of unusual structure of Bi_1.5Zn_0.92Nb_1.5O_6.92 and ZnO. The ZnO is distributed evenly in the grain and at the boundary of the Bi_1.5Zn_0.92Nb_1.5O_6.92 structure. Many small voids (<1 μm) were observed in the samples due to the loss of volatile Bi during sintering. The Bi_1.5Zn_0.92Nb_1.5O_6.92 exhibited a broad dielectric relaxation between 100 and 400 K at 1.8 GHz, peaking around 230 K. The Fourier transformation IR spectra predict that dielectric relaxation may occur near room temperature during extremely high frequencies (THz). The substitutional point defects in Bi_1.5Zn_0.92Nb_1.5O_6.92 provide room for dielectric relaxation at microwave frequencies. The low quality factor Q × f (∼520 GHz) of Bi_1.5Zn_0.92Nb_1.5O_6.92 results from both the dielectric relaxation of the material and the voids within its microstructure. The presence of ZnO phase in the Bi_1.5ZnNb_1.5O₇ produces interstitial defects that further enhance the dielectric relaxation with reduced quality factor Q × f (∼426 GHz).     

Bi1.5ZnNb1.5O7纳米粉体的水热合成与表征

以分析纯的Bi(NO_3)_3·5H_2O,ZnO和Nb_2O_5为初始原料,KOH为矿化剂,采用水热法合成立方焦绿石结构的Bi_(1.5)ZnNb_(1.5)O_7纳米粉体。通过XRD分析其物相组成,TEM分析其形貌和尺寸,Scherrer公式计算其晶粒的大小。结果表明,在KOH浓度为1.8mol/L,温度为180～220℃反应6～48h,可以合成立方焦绿石结构的Bi_(1.5)ZnNb_(1.5)O_7纳米粉体,粉体颗粒尺寸约30～50nm,形貌呈较为规则的颗粒状。合成温度和反应时间对合成粉体的物相和粒径都有一定的影响,并讨论了水热法合成Bi_(1.5)ZnNb_(1.5)O_7纳米粉体的机理。     

熔盐法制备Bi1.5ZnNb1.5O7陶瓷粉体

以Bi2O3,ZnO和Nb2O5为原料,KCl为熔盐,用熔盐法合成了单相Bi1.5ZnNb1.5O7陶瓷粉体.XRD和SEM分析表明,在950～1000 ℃,合成了单相Bi1.5ZnNb1.5O7粉体,粉体呈颗粒状,尺寸约2～5 μm.研究了合成温度、熔盐含量和保温时间对粉体颗粒形貌和尺寸的影响.结果表明,合成温度对Bi1.5ZnNb1.5O7粉体形貌和尺寸影响较大,熔盐含量和保温时间对其形貌和尺寸的影响相对较小.     

水热法合成Bi1.5ZnNb1.5O7纳米粉体

以Bi(NO3)3·5H2O,ZnO和Nb2O5为原料,KOH作为矿化剂,用水热法合成了单相Bi1 5ZnNb1.5O7粉体.用N2吸附法测定单相Bi1.5ZnNb1.5O7粉体的比表面积并计算相应的粒径.研究了KOH浓度、合成温度和反应时间对粒径的影响.用X射线衍射分析合成粉体的物相组成,并通过Scherrer公式计算粉体晶粒的尺寸.用透射电子显微镜分析合成粉体的形貌.结果表明:采用水热法可以合成单相立方焦绿石结构的Bi1.5ZnNb1.5O7纳米粉体.改变水热反应条件,可以控制合成粉体的粒径和比表面积大小.当KOH浓度为1.8 mol/L,温度为180～220 ℃,反应时间为24h时,合成的Bi1.5ZnNb1.5O7纳米粉体的最小粒径为51 nm,最大比表面积为28.8 m2/g.     

Dielectric properties and electrical behaviors of tunable Bi1.5MgNb1.5O7 thin films

The Bi_1.5MgNb_1.5O₇ (BMN) thin films were prepared on Au-coated Si substrates by rf magnetron sputtering. We systematically investigated the structure, dielectric properties and voltage tunable property of the films with different annealing temperatures. The relationships of leakage current and breakdown bias field with annealing temperature were firstly studied and a possible explanation was proposed. The deposited BMN thin films had a cubic pyrochlore phase when annealed at 550 °C or higher. With the increasing of annealing temperature, the dielectric constant and tunability also went up. BMN thin films annealed at 750 °C exhibited moderate dielectric constant of 106 and low dielectric loss of 0.003–0.007 between 10 kHz and 10 MHz. The maximum tunability of 50% was achieved at a bias field of 2 MV/cm. However, thin films annealed at 750 °C had lower breakdown bias field and higher leakage current density than films annealed below 750 °C. The excellent physical and electrical properties make BMN thin films promising for potential tunable capacitor applications.     

CeO2–YO1.5–NdO1.5 system: An extensive phase relation study

The sub-solidus phase relations in the CeO₂–YO_1.5–NdO_1.5 system have been studied. About 45 compositions in the series Ce_1?x(Y_0.70Nd_0.30)_xO_2?0.5x, Y_1?x(Ce_0.50Nd_0.50)_xO_1.5+0.25x and Nd_1?x(Ce_0.55Y_0.45)_xO_1.5+0.275x were prepared and characterized by powder XRD. In the Ce_1?x(Y_0.70Nd_0.30)_xO_2?0.5x series, there was a gradual transformation from the defective F-type cubic lattice to an ordered C-type phase with increasing x, whereas in the Y_1?x(Ce_0.50Nd_0.50)_xO_1.5+0.25x series, the C-type cubic lattice of yttria was retained over the entire range. In the Nd_1?x(Ce_0.55Y_0.45)_xO_1.5+0.275x system, the compositions with NdO_1.5 content greater than 95 mol% showed coexistence of hexagonal, monoclinic and cubic phases. A biphasic region of monoclinic and C-type cubic phases was observed as NdO_1.5 decreases from 90 to 70 mol%. All the compositions below 70 mol% NdO_1.5, were found to be C-type cubic solid solutions. The phase relations are distinctly characterized by an extensive range of cubic solid solutions, stable under the slow-cooled conditions. To the best of our knowledge, this is the first detailed sub-solidus study reported in CeO₂–YO_1.5–NdO_1.5 system.     

Cold sintering process of Li1.5Al0.5Ge1.5(PO4)3 solid electrolyte

The recently developed technique of cold sintering process (CSP) enables densification of ceramics at low temperatures, i.e., <300°C. CSP employs a transient aqueous solvent to enable liquid phase‐assisted densification through mediating the dissolution‐precipitation process under a uniaxial applied pressure. Using CSP in this study, 80% dense Li_1.5Al_0.5Ge_1.5(PO₄)₃ (LAGP) electrolytes were obtained at 120°C in 20 minutes. After a 5 minute belt furnace treatment at 650°C, 50°C above the crystallization onset, Li‐ion conductivity was 5.4 × 10^?5 S/cm at 25°C. Another route to high ionic conductivities ~10^?4 S/cm at 25°C is through a composite LAGP ‐ (PVDF‐HFP) co‐sintered system that was soaked in a liquid electrolyte. After soaking 95, 90, 80, 70, and 60 vol% LAGP in 1 M LiPF₆ EC‐DMC (50:50 vol%) at 25°C, Li‐ion conductivities were 1.0 × 10^?4 S/cm at 25°C with 5 to 10 wt% liquid electrolyte. This paper focuses on the microstructural development and impedance contributions within solid electrolytes processed by (i) Crystallization of bulk glasses, (ii) CSP of ceramics, and (iii) CSP of ceramic‐polymer composites. CSP may offer a new route to enable multilayer battery technology by avoiding the detrimental effects of high temperature heat treatments.     

Production and properties of In and Ir doped Bi1.5Zn0.92Nb1.5O6.92 pyrochlores

In and Ir were doped into Bi_1.5Zn_0.92Nb_1.5O_6.92 (BZN) pyrochlore using the chemical formulas of Bi_1.5Zn_0.92?3x/2In_xNb_1.5O_6.92 and Bi_1.5Zn_0.92Nb_1.5?4x/5Ir_xO_6.92. While In was doped into Zn site of BZN, Ir was added into the Nb site. The solubility limits of In and Ir cations in BZN were x = 0.1 and x = 0.12–0.15, respectively. Above the solubility limits second phases of BiNbO₄ and InNbO₄ formed for In doping but Bi₂Ir₂O₇ and ZnO phases appeared in Ir doping. SEM investigation confirmed the XRD results. Lattice parameters of BZN pyrochlores slightly increased with In doping but decreased with Ir due to their ionic radii. The dielectric constant of Ir doped BZN slightly decreased with Ir content. However, In doping into the BZN generally decreased the dielectric constant at low doping ratios but increased it at high dopings. Temperature coefficients of Ir and In doped BZN ceramics were significantly affected by doping amount.     

Structure,dielectric and optical properties of Bi1.5+xZnNb1.5O7+1.5x pyrochlores

Non-stoichiometric pyrochlore ceramics with formula Bi_1.5+xZnNb_1.5O_7+1.5x were systematically investigated. Crystal structures of the compounds were studied by X-ray diffraction (XRD) technique. The structures were identified as pure cubic pyrochlores when |x| < 0.1. Dielectric and optical properties of the compositions when x = −0.1, 0 and 0.1 were studied. All samples have high resistivities and low dielectric loss. With increasing x in Bi_1.5+xZnNb_1.5O_7+1.5x, the lattice constant, permittivity, temperature coefficient of permittivity and thermal expansion coefficient increased, while dielectric loss decreased. Raman spectra indicated that the intensity of Bi–O stretching become stronger with increasing x. A vibration mode emerging at 861 cm⁻¹ when x = −0.1 means that the B–O coordination environment is significantly more disordered. Absorption spectra suggested that the bandgap energy become lower from 2.86 to 2.70 eV as lattice constants increased. Strong absorption occurs at wavelengths from 433 to 459 nm, shows that samples have the ability to respond to wavelengths in the visible light region.