硅晶片抛光用高纯度大粒径硅溶胶的研究

本文采用硅粉水解-胶粒整理法制备硅晶片抛光所用硅溶胶,考察了单质硅粉的加入量、反应时间、反应温度、硅溶胶底液浓度、催化剂种类及用量对硅溶胶胶粒平均粒径增长的影响,得到最佳工艺条件:单质硅粉的最佳加入量为25 g、反应时间7h、反应温度80℃、硅溶胶底液的质量浓度为8％、选稀氨水为催化剂、用量为12 mL,在此条件下可制备得到平均粒径为20 nm的硅溶胶产品.经过多次粒子生长可以制备得到适用于硅晶片抛光产业的高纯度大粒径硅溶胶.     

大粒径硅溶胶粒径增长及其控制工艺的研究

大粒径硅溶胶在涂料、化学机械抛光、催化剂载体等工业领域中都有着极其广泛的应用。在添加适量催化剂的条件下,采用单质硅粉氧化法制备了大粒径溶胶。重点介绍了大粒径硅溶胶的分类、性质及应用,通过研究不同条件下大粒径硅溶胶的粒径增长过程分析了大粒径硅溶胶制备过程中的粒径增长机理。在添加阴离子表面活性剂的条件下,采用浓缩蒸馏实验研究了大粒径硅溶胶粒径增长与其浓度的关系,结果表明：随着大粒径硅溶胶浓度的增大,大粒径硅溶胶的粒径呈先减小后增大的趋势。最后提出了制备大粒径硅溶胶的粒径控制工艺。     

丙烯腈催化剂用硅溶胶的制备及其性能研究

采用常压粒子增长工艺合成丙烯腈催化剂载体专用硅溶胶,研究了硅溶胶的粒径、pH、稳定剂对丙烯腈催化剂性能的影响。结果表明:当硅溶胶粒径分布集中、平均粒径23～25nm、pH9.0～9.5、适量加入氢氧化钠和氨水混合溶液作为稳定剂和加入少量助剂时,丙烯腈单程收率接近80%。     

丙烯腈催化剂用硅溶胶制备及性能

采用常压粒子增长工艺合成丙烯腈催化剂载体专用硅溶胶，研究了硅溶胶的粒径、pH、稳定剂对丙烯腩催化荆性能的影响。结果表明：当硅溶胶粒径分布集中、平均粒径23～25nm、pH9．0～9．5、适量加入氢氧化钠和氨水混合溶液作为稳定剂和加入少量助剂时，丙烯腈单程收率接近80％。     

单分散大粒径硅溶胶的制备

采用单质硅粉水解法,经过初级粒子制备和粒子多级生长,制备了单分散的大粒径硅溶胶,考察了反应温度、反应时间、硅粉添加量、氢氧化钠浓度等因素对粒径及PDI的影响.最优实验条件为:反应温度70℃、反应时间12h、硅粉添加量21 g、氢氧化钠浓度0.5wt％.最优条件下的硅溶胶粒径为20 nm,通过粒径的多次生长,制备出粒径为90 nm的硅溶胶,且呈单分散性.     

反应条件对合成单分散二氧化硅微球的影响

采用正硅酸乙酯、氨水、异丙醇和水为原料,合成了微米和亚微米级二氧化硅微球,着重研究了实验温度、氨水浓度、正硅酸乙酯的用量、加水量以及反应时间对该反应的影响。结合对所合成产物的扫描电镜表征,确定了制备不同粒径、均匀的单分散二氧化硅微球的实验条件。     

利用多晶硅切削废料制备硅溶胶的研究

为实现多晶硅废料的绿色高效回收利用,以多晶硅切削废料为硅源,通过水解法制备硅溶胶.探讨了不同碱性水解剂的水解性能,并系统地研究了硅溶胶的最佳合成工艺.实验结果表明:以浓度为1.36 mol/L的氨水为水解剂,氨水溶液和多晶硅废料的质量比为240∶1时,经150℃水热处理5h,能够得到近球形形貌、平均粒径约为80 nm左右的硅溶胶,静置10d,未发生凝胶现象,表现出良好的稳定性.为多晶硅废料的资源再利用提供了一种可行性路线.     

大粒径纳米硅溶胶的制备

采用硅粉氧化水解法制备大粒径硅溶胶,可以应用于涂料、陶瓷、吸附剂、化学机械抛光等领域。采用种子生长法,先制备出种子硅溶胶,再利用种子硅溶胶制备大粒径硅溶胶。通过实验,考察温度、种子质量、催化剂用量,得出较佳实验条件:种子(A)生成温度为75℃,催化剂用量为2 g,所得种子平均粒径为25 nm;硅溶胶(B)生成温度为85℃,催化剂用量为4 g,种子质量为14 g,所得溶胶平均粒径为60 nm。     

耐碱性超高纯硅溶胶

本发明公开了一种耐碱性超高纯硅溶胶的制备方法,包括下列步骤：一、以可以精馏提纯的有机硅烷作为原料,将其溶解于无机酸或有机酸制得酸性硅酸溶液;二、将可以精馏提纯的有机硅烷溶解在无机碱或有机碱水溶液中制得碱性含硅溶液,或者将无机碱或有机碱水溶液直接稀释制得碱性不含硅溶液;三、将酸性硅酸溶液与碱性的含硅或不含硅溶液在105摄氏度以下的温度反应,制备成硅溶胶;四、将硅溶胶在常压下或减压下加热至沸腾排除甲醇乙醇等副产品及一部分的水,得到浓度在20％以上的硅溶胶;本发明既具有与STOBER法硅溶胶一样的超高纯,又具有与水玻璃法的硅溶胶一样的耐碱性,还可以与一般的水玻璃法硅溶胶一样可浓缩至高浓度。     

反相悬浮体系制备高纯多孔二氧化硅微球

本文以有机硅源聚硅酸乙酯(TEOS-40)为原料,经酸催化水解将油溶性TEOS-40水解为水溶性水解产物后通过反相悬浮体系制备得到高纯多孔微米级二氧化硅微球.考察了催化剂盐酸浓度,搅拌速度及成球过程氨水的加入等对微球粒径及孔结构的影响.结果表明,此方法所制备二氧化硅微球球形圆整,比表面积在23.8～637.2 m2/g范围内可调,平均孔径3.65～13.11 nm,为制备高纯微米级二氧化硅微球提供了一种新方法.     

Combustion of silicon powders containing organic additives in nitrogen gas under pressure: 2. Composition of combustion products

Combustion of silicon powders containing organic dopants in nitrogen gas under pressure was found to yield a mixture of α-Si₃N₄, β-Si₃N₄, SiC, and Si₂N₂O. Relative amount of these compounds in combustion product was found to depend on the pressure of nitrogen gas, type and concentration of dopants, combustion geometry, and cooling rate. The formation of α-Si₃N₄ was found to occur in the presence of oxygen-containing dopants. The type of dopant was also found to affect the morphology of product particles.      

Some New Perspectives on Oxidation of Silicon Carbide and Silicon Nitride

This study provides new perspectives on why the oxidation rates of silicon carbide and silicon nitride are lower than those of silicon and on the conditions under which gas bubbles can form on them. The effects on oxidation of various rate-limiting steps are evaluated by considering the partial pressure gradients of various species, such as O₂, CO, and N₂. Also calculated are the parabolic rate constants for the situations when the rates are controlled by oxygen and/or carbon monoxide (or nitrogen) diffusion. These considerations indicate that the oxidation of silicon carbide and silicon nitride should be mixed controlled, influenced both by an interface reaction and diffusion.     

有机聚硅氧烷在医药中的应用进展

总结了硅橡胶、硅油、硅树脂在医药中的应用,并介绍了硅烷化技术在药物合成、蛋白质分析检测等生物工程方面的应用和一些新型抗肿瘤、抗癌的含硅药物及多孔硅膜的药物缓释体系的发展。     

Nitridation behavior of silicon powder compacts of various thicknesses with Y2O3 and MgO as sintering additives

The effects of the nitriding temperature (1300 and 1350°C), holding time (0‐4 hours), and thickness of Si powder compacts on the nitridation behavior of silicon were investigated by examining the nitridation rates, analyzing phase compositions, and observing the microstructures of nitrided compacts. Si powder compacts doped with Y₂O₃ and MgO as sintering additives were prepared with thicknesses of 3, 6, and 9 mm. The phases of nitrided compacts were transformed from Si to α‐Si₃N₄ and β‐Si₃N₄ with an increase in the nitriding temperature and holding time. The degree of nitridation increased with the nitriding temperature and holding time. The β/(α+β) ratio increased with the nitriding temperature and holding time, and with a decrease in the thickness of the Si powder compacts. However, all compacts exhibited the same tendency for a higher β/(α+β) ratio at the compact surface than in the bulk of the compact. The variation in the β/(α+β) ratio for each compact decreased with an increase in the nitriding temperature and holding time.     

Oxidation of Silicon and Silicon Carbide in Ozone-Containing Atmospheres at 973 K

The oxidation behavior of a silicon wafer, chemically vapor-deposited SiC, and single-crystal SiC was investigated in an oxygen—2%–7% ozone gas mixture at 973 K. The thickness of the oxide film that formed during oxidation was measured by ellipsometry. The oxidation rates in the ozone-containing atmosphere were much higher than those in a pure oxygen atmosphere. The parabolic oxidation kinetics were observed for both silicon and SiC. The parabolic rate constants varied linearly with the ozone-gas partial pressure. Inward diffusion of atomic oxygen formed by the dissociation of ozone gas through the SiO₂ film apparently was the rate-controlling process.     

Volatility Diagrams for Silica, Silicon Nitride, and Silicon Carbide and Their Application to High-Temperature Decomposition and Oxidation

Volatility diagrams—isothermal plots showing the partial pressures of two gaseous species in equilibrium with the several condensed phases possible in a system—are discussed for the Si-O and Si-N systems, and extended to the Si-N-O and Si-C-O systems, in which the important ceramic constituents SiO₂, Si₃N₄, Si₂N₂O, and SiC appear as stable phases. Their use in understanding the passiveactive oxidation transitions for Si, Si₃N₄, and SiC are demonstrated.     

Mössbauer Study of the Influence of Fe-Si-N Liquid in the Synthesis of β-Si3N4 from Silica

Mössbauer spectra of the products obtained by carbothermal reduction and distribution of silica in the presence of iron in the temperatures range 1200^o to 1540^o were studied. The preponderance of β- Si₃N₄ over the α form at a higher reaction temperature were assumed to be related to the formation of an Fe-Si-N liquid. The liquid did not alter its composition with the variation of reduction-temprature, Iron had no effect on the reaction mechanism below 1300^oC.     

化妆品中用硅粉、硅悬浮液的最新技术(日)

硅是化妆品生产不可缺少的原料之一。介绍了硅粉、硅悬浮液用于化妆品生产的最新技术, 特别是毛发调理产品中的应用。硅粉作为固体原料有望成为化妆品中新产品的生产原料。     

Improved Resistance to Damage of Silicon Carbide-Whisker-Reinforced Silicon Nitride-Matrix Composites by Whisker-Oriented Alignment

The effects of whisker-oriented alignment on resistance to damage of SiC( w )/Si₃N₄ composites have been investigated by the Vickers indentation method and R -curve behavior. It is shown that increasing the degree of whisker-oriented alignment decreases the lengths of Vickers impressions and indentation cracks. The results exhibit rising R -curve behaviors for the SiC( w )/Si₃N₄ composites with different degree of whisker-oriented alignment. Moreover, the initial crack length c _i, the threshold of crack growth resistance K _i, and the upper bound of crack growth resistance K _∞ change regularly with increasing degree of whisker-oriented alignment. All results suggest that the whisker-oriented alignment improves the resistance to damage of the composites, resulting in a more reliable and usable composite.     

硅整流改为可控硅整流技术总结

介绍了硅整流改为可控制硅整流的技术改造过程及应注意的问题，改造后的整流技术具有操作简单，提高经济效益的特点。